DRAMs electronic components in stock
ComSIT stocks 680 drams part numbers (575 available from stock) from 39 manufacturers. Original certified parts, best price, fast worldwide delivery. Click a part number for full specifications, lifecycle status and a quote request.
Classification: Semiconductors > Memory ICs > DRAMs
DRAMs by manufacturer
- Micron (190)
- Samsung (133)
- ISSI (68)
- SK Hynix (37)
- Alliance (25)
- Hitachi (22)
- Toshiba (22)
- Winbond (19)
- Elite Semi (18)
- Mitsubishi (18)
- Infineon (12)
- Nanya (12)
- Elpida (10)
- Qimonda (10)
- OKI (8)
- ProMOS (7)
- AMIC (6)
- Fujitsu Semi (6)
- Mosel-Vitelic (6)
- Siemens (6)
- Alliance Semi (5)
- Fujitsu (4)
- Kingston Tech (4)
- Fidelix (3)
- IBM (3)
- Lapis (3)
- LG Semi (3)
- Motorola (3)
- TI (3)
- Transcend Info (3)
- IM Intelligent (2)
- Renesas (2)
- Etron (1)
- G-Link Tech (1)
- Goldstar (1)
- Innodisk Corp (1)
- Memphis Elec (1)
- Rochester Elec (1)
- Sharp (1)
| PART No. | MANUFACTURER | Description | STOCK |
|---|---|---|---|
| MT41K128M16JT-125AAT:K | Micron | DDR3L DRAM, 128MX16, CMOS, PBGA96 | 62,000 |
| EDS6416AJTA-75-E | Elpida | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54 | 41,760 |
| KM48S2020CT-G10 | Samsung | Synchronous DRAM, 2MX8, 7ns, CMOS, PDSO44 | 32,000 |
| MT48LC4M32B2P-6AAIT:L | Micron | Synchronous DRAM, 4MX32, 5.4ns, CMOS, PDSO86 | 20,658 |
| HM538253BJ-8 | Hitachi | Video DRAM, 256KX8, 80ns, CMOS, PDSO40 | 19,825 |
| W631GG6KB15K | Winbond | DDR3 DRAM, 64MX16, 0.255ns, CMOS, PBGA96 | 16,720 |
| HYB514256BJ-60 | Siemens | Fast Page DRAM, 256KX4, 60ns, CMOS, PDSO20 | 15,117 |
| M5M4256AP-12 | Mitsubishi | Page Mode DRAM, 256KX1, 120ns, NMOS, PDIP16 | 13,690 |
| K4S281632K-UI75 | Samsung | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54 | 13,510 |
| EM638165TS-7 | Etron | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54 | 10,800 |
| MT48H16M16LFBF-75IT:G | Micron | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54 | 9,586 |
| H5PS2G83AFR-S6 | SK Hynix | DDR2 DRAM, 256MX8, 0.45ns, CMOS, PBGA60 | 7,943 |
| IS42S16160B-7TL | ISSI | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54 | 7,845 |
| MT46H32M16LFCK-75IT | Micron | DDR DRAM, 32MX16, 6ns, CMOS, PBGA60 | 7,681 |
| HY5RS573225AFP-2 | SK Hynix | DDR DRAM, 8MX32, 0.3ns, CMOS, PBGA136 | 7,345 |
| W949D6KBHX5E | Winbond | 32MX16, 5ns, CMOS, PBGA60 | 5,209 |
| IS41C44052-60JI | ISSI | Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24 | 5,165 |
| NT5CC256M16DP-DI | Nanya | DDR DRAM, 256MX16, CMOS, PBGA96 | 5,091 |
| HM538253BJ-7 | Hitachi | Video DRAM, 256KX8, 70ns, CMOS, PDSO40 | 4,910 |
| IS45S16100C1-7BLA1 | ISSI | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PBGA60 | 4,800 |
| MB81C1000A-60PSZ | Fujitsu | Fast Page DRAM, 1MX1, 60ns, CMOS, PZIP20 | 4,545 |
| MT48LC32M8A2BB-7E:G | Micron | Synchronous DRAM, 32MX8, 5.4ns, CMOS, PBGA60 | 4,208 |
| MT48LC2M32B2TG-7IT:G | Micron | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86 | 4,195 |
| CMS4A16LAH-75AS | Fidelix | DRAM | 4,000 |
| H5PS5162KFR-S6C | SK Hynix | DDR2 DRAM, 32MX16, 0.4ns, CMOS, PBGA84 | 4,000 |
| KM44C1003DJ-6 | Samsung | Fast Page DRAM, 1MX4, 60ns, CMOS, PDSO24 | 4,000 |
| MT47H32M16HR-3:F | Micron | DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84 | 4,000 |
| M5M44170CJ-7 | Mitsubishi | Fast Page DRAM, 256KX16, 70ns, CMOS, PDSO40 | 3,725 |
| HYB39S16160CT-6 | Infineon | Synchronous DRAM, 1MX16, 5ns, CMOS, PDSO50 | 3,250 |
| IS45S32200E-7TLA1 | ISSI | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86 | 3,203 |
| MT4LC1M16E5DJ-5 | Micron | EDO DRAM, 1MX16, 50ns, CMOS, PDSO42 | 3,193 |
| MT48LC4M16A2TG-75:G | Micron | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54 | 3,188 |
| HYB514400BJ-60 | Infineon | Fast Page DRAM, 1MX4, 60ns, CMOS, PDSO20 | 3,170 |
| K4B2G1646Q-BIK0 | Samsung | DDR DRAM, 128MX16, 0.225ns, CMOS, PBGA96 | 3,120 |
| MB81C4256A-60PJ | Fujitsu Semi | Fast Page DRAM, 256KX4, 60ns, CMOS, PDSO20 | 2,900 |
| HM53461ZP-10 | Hitachi | Video DRAM, 64KX4, 100ns, CMOS, PZIP24 | 2,703 |
| K4D263238K-VC40 | Samsung | GDDR1 DRAM, 4MX32, 0.6ns, CMOS, PBGA144 | 2,648 |
| MT4C1M16E5TG-6 | Micron | EDO DRAM, 1MX16, 60ns, CMOS, PDSO44 | 2,595 |
| K4S641632K-UI75T | Samsung | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54 | 2,435 |
| W9864G6JH-6I | Winbond | Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54 | 2,411 |
| NT6AN512T32AV-J2 | Nanya | LPDDR4 DRAM, 512MX32, CMOS, PBGA200 | 2,238 |
| MB81C1000A-70PSZ | Fujitsu | Fast Page DRAM, 1MX1, 70ns, CMOS, PZIP20 | 2,236 |
| KM416C1200CJ-6 | Samsung | Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO42 | 2,186 |
| MT47H64M16HR-25E | Micron | DDR DRAM | 2,171 |
| IC42S32400-7TG | ISSI | Synchronous DRAM, 4MX32, 5.5ns, CMOS, PDSO86 | 2,160 |
| EDS2516AFTA-75-E | Elpida | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54 | 2,159 |
| K4S641632H-TC75 | Samsung | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54 | 2,154 |
| NT5TU128M8HE-BE | Nanya | DDR2 DRAM, 128MX8, 0.35ns, CMOS, PBGA60 | 2,092 |
| MT46V32M16TG-6TIT:F | Micron | DDR1 DRAM, 32MX16, 0.7ns, CMOS, PDSO66 | 2,081 |
| M5M411665ATP3-6S | Mitsubishi | EDO DRAM, 64KX16, 60ns, CMOS, PDSO40 | 2,055 |
| HYB25D256800CC-6 | Qimonda | DDR DRAM, 32MX8, 0.7ns, CMOS, PBGA60 | 2,000 |
| IS41LV16105-50TI | ISSI | Fast Page DRAM, 1MX16, 50ns, CMOS, PDSO44 | 1,980 |
| K4S643232C-TC55 | Samsung | Synchronous DRAM, 2MX32, 5ns, CMOS, PDSO86 | 1,972 |
| M2V28S40ATP-7 | Mitsubishi | Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54 | 1,940 |
| MT47H32M16HW-3AT:F | Micron | DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84 | 1,920 |
| M13S256328A-5BG | Elite Semi | DDR DRAM, 8MX32, 0.65ns, CMOS, PBGA144 | 1,901 |
| MT47H128M8CF-25:H | Micron | DDR DRAM, 128MX8, 0.4ns, CMOS, PBGA60 | 1,890 |
| HY5PS561621AFP-25 | SK Hynix | DDR DRAM, 16MX16, 0.4ns, CMOS, PBGA84 | 1,883 |
| IS42S16400B-6T | ISSI | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54 | 1,854 |
| IS41C16256-35K | ISSI | EDO DRAM, 256KX16, 35ns, CMOS, PDSO40 | 1,810 |
| K4S561632D-TC75 | Samsung | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54 | 1,810 |
| MT41J128M8JP-187E:G | Micron | DDR DRAM, 128MX8, 0.15ns, CMOS, PBGA78 | 1,792 |
| MT46H64M32LFCX-6IT:B | Micron | DDR DRAM, 64MX32, 5ns, CMOS, PBGA90 | 1,770 |
| MT47H32M16HR-25EAAT:G | Micron | DDR2 DRAM, 32MX16, 0.45ns, CMOS, PBGA84 | 1,750 |
| MSM514260C-60JS | Lapis | Fast Page DRAM, 256KX16, 60ns, CMOS, PDSO40 | 1,747 |
| MSM514256B-60ZS | OKI | Fast Page DRAM, 256KX4, 60ns, CMOS, PZIP19 | 1,700 |
| HYB514400BT-60 | Infineon | Fast Page DRAM, 1MX4, 60ns, CMOS, PDSO20 | 1,685 |
| MT48LC4M32B2P-7:G | Micron | Synchronous DRAM, 4MX32, 5.5ns, CMOS, PDSO86 | 1,652 |
| MT47H64M16NF-25EAIT:M | Micron | DDR2 DRAM, 64MX16, 0.4ns, CMOS, PBGA84 | 1,648 |
| MT48LC8M16A2P-6A:L | Micron | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54 | 1,623 |
| W971GG8JB-25 | Winbond | DDR2 DRAM, 16MX8, 0.4ns, CMOS, PBGA60 | 1,611 |
| KM44C1000DT-6 | Samsung | Fast Page DRAM, 1MX4, 60ns, CMOS, PDSO20 | 1,525 |
| KM416V1204CT-5 | Samsung | EDO DRAM, 1MX16, 50ns, CMOS, PDSO44 | 1,517 |
| W9425G6JB-5I | Winbond | DDR1 DRAM, 16MX16, 0.7ns, CMOS, PBGA60 | 1,510 |
| IS42S16800F-7TLI-TR | ISSI | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54 | 1,500 |
| IS46TR16128BL-125KBLA1-TR | ISSI | DDR3L DRAM, 128MX16, CMOS, PBGA96 | 1,500 |
| M5M44266BJ-8 | Mitsubishi | Fast Page DRAM, 256KX4, 80ns, CMOS, PDSO20 | 1,500 |
| IS45S32400F-7TLA2 | ISSI | Synchronous DRAM, 4MX32, 5.4ns, CMOS, PDSO86 | 1,494 |
| IS45S16100E-7TLA1-TR | ISSI | DRAM | 1,435 |
| W9425G6KH-5I | Winbond | DDR1 DRAM, 16MX16, 0.7ns, CMOS, PDSO66 | 1,404 |
| AS4LC1M16E5-60JC | Alliance Semi | EDO DRAM, 1MX16, 60ns, CMOS, PDSO42 | 1,399 |
| MT4C4007JDJ-6 | Micron | EDO DRAM, 1MX4, 60ns, CMOS, PDSO20 | 1,394 |
| HYB39SC256160FE-7 | Qimonda | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54 | 1,390 |
| K4F151612D-TL60 | Samsung | Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO44 | 1,360 |
| MT46V32M16P-5BAIT:J | Micron | DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66 | 1,337 |
| M12L128324A-6BG2E | Elite Semi | Synchronous DRAM, 4MX32, 5.5ns, CMOS, PBGA90 | 1,330 |
| V59C1G01168QBJ-25 | ProMOS | DDR2 DRAM, 64MX16, CMOS, PBGA84 | 1,325 |
| K4B4G0846E-BYK00 | Samsung | DDR3L DRAM, 512MX8, CMOS, PBGA78 | 1,280 |
| K4X51163PK-FGD80 | Samsung | DDR1 DRAM, 32MX16, CMOS, PBGA60 | 1,280 |
| M12L2561616A-6TG | Elite Semi | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54 | 1,207 |
| K4M641633K-BN75 | Samsung | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54 | 1,167 |
| MT48H32M16LFB4-75IT:C | Micron | DDR DRAM, 32MX16, 5.4ns, CMOS, PBGA54 | 1,166 |
| MT41J128M16JT-125:KTR | Micron | DDR3 DRAM, 128MX16, CMOS, PBGA96 | 1,085 |
| NT5DS8M16IS-5T | Nanya | DDR1 DRAM, 8MX16, 0.7ns, CMOS, PDSO66 | 1,080 |
| GM71V18160CT-6 | SK Hynix | Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO44 | 1,077 |
| AS4C32M16SB-7TCN | Alliance | Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54 | 1,075 |
| GM71C18163CJ-6 | LG Semi | EDO DRAM, 1MX16, 60ns, CMOS, PDSO42 | 1,065 |
| MT48LC8M32B2P-7 | Micron | Synchronous DRAM, 8MX32, 6ns, CMOS, PDSO86 | 1,021 |
| HYB25DC256160CE-5 | Qimonda | DDR DRAM, 16MX16, 0.5ns, CMOS, PDSO66 | 1,005 |
| IS45S16100C1-7TLA1 | ISSI | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50 | 1,000 |
| M5M411664AJ-7 | Mitsubishi | Fast Page DRAM, 64KX16, 70ns, CMOS, PDSO40 | 1,000 |
| M5M44400BJ-7ST | Mitsubishi | Fast Page DRAM, 1MX4, 70ns, CMOS, PDSO20 | 1,000 |
| MT42L32M32D2AC-25AIT:A | Micron | DDR DRAM, 32MX32, 5.5ns, CMOS, PBGA134 | 1,000 |
| MT46V16M16FG-5B:F | Micron | DDR DRAM, 16MX16, 0.7ns, CMOS, PBGA60 | 1,000 |
| MT48LC8M16A2F4-7E | Micron | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54 | 1,000 |
| MT48H16M16LFBF-75IT:H | Micron | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54 | 999 |
| IS42S16100E-7TL | ISSI | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50 | 998 |
| K4S641632N-LC75 | Samsung | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54 | 998 |
| MT47H32M16HR-25E:H | Micron | DDR2 DRAM, 32MX16, 0.4ns, CMOS, PBGA84 | 991 |
| KM416S1020CT-G10 | Samsung | Synchronous DRAM, 1MX16, 7ns, CMOS, PDSO50 | 990 |
| HYB514256BJ-80 | Siemens | Fast Page DRAM, 256KX4, 80ns, CMOS, PDSO20 | 968 |
| K4E641612E-TL60 | Samsung | EDO DRAM, 4MX16, 60ns, CMOS, PDSO50 | 960 |
| KM428C256J-7 | Samsung | Video DRAM, 256KX8, 70ns, CMOS, PDSO40 | 945 |
| MSM514260E-60JS | OKI | Fast Page DRAM, 256KX16, 60ns, CMOS, PDSO40 | 925 |
| KM48C2104CK-L6 | Samsung | EDO DRAM, 2MX8, 60ns, CMOS, PDSO28 | 922 |
| MB8117800A-60PJ | Fujitsu | Fast Page DRAM, 2MX8, 60ns, CMOS, PDSO28 | 902 |
| HYB514171BJ-60 | Infineon | Fast Page DRAM, 256KX16, 60ns, CMOS, PDSO40 | 896 |
| MT41K512M8DA-107IT:P | Micron | DDR DRAM, 512MX8, 20ns, CMOS, PBGA78 | 895 |
| K4S641632K-UC75 | Samsung | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54 | 894 |
| HY5DU281622FTP-J | SK Hynix | DDR1 DRAM, 8MX16, 0.7ns, CMOS, PDSO66 | 884 |
| K4S161622H-TC60 | Samsung | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50 | 882 |
| TC524258BZ-80 | Toshiba | Video DRAM, 256KX4, 80ns, CMOS, PZIP28 | 880 |
| M12L64164A-7TIG2Y | Elite Semi | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54 | 864 |
| MT46H16M16LFBF-6IT:H | Micron | 16MX16, 5ns, CMOS, PBGA60 | 835 |
| IS46TR16256BL-107MBLA2-TR | ISSI | DDR3L DRAM, 256MX16, CMOS, PBGA96 | 820 |
| MT46V8M16TG-5B:D | Micron | DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66 | 805 |
| GM71256-15 | LG Semi | Page Mode DRAM, 256KX1, 150ns, MOS, PDIP16 | 800 |
| MT48LC32M4A2P-75:G | Micron | Synchronous DRAM, 32MX4, 5.4ns, CMOS, PDSO54 | 784 |
| MT48LC16M8A2TG-75:G | Micron | Synchronous DRAM, 16MX8, 5.4ns, CMOS, PDSO54 | 775 |
| K4S281632C-TC1H | Samsung | Synchronous DRAM, 8MX16, 6ns, CMOS, PDSO54 | 770 |
| HYB39S256160FE-7 | Qimonda | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54 | 765 |
| HM514260AJ-8 | Hitachi | Fast Page DRAM, 256KX16, 80ns, CMOS, PDSO40 | 750 |
| IS42S16100-7TI | ISSI | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50 | 745 |
| AS4C4M4F1-60JC | Alliance Semi | Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24 | 742 |
| MT47H128M16RT-25EAIT:C | Micron | DDR2 DRAM, 128MX16, 0.4ns, CMOS, PBGA84 | 732 |
| MT48LC4M16A2TG-75IT | Micron | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54 | 715 |
| HY5116400CT-60 | SK Hynix | Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24 | 712 |
| KM49C512BJ-6 | Samsung | Fast Page DRAM, 512KX9, 60ns, CMOS, PDSO28 | 700 |
| MT48LC4M32B2P-6A:L | Micron | Synchronous DRAM, 4MX32, 5.4ns, CMOS, PDSO86 | 695 |
| MT48H8M16LFF4-10 | Micron | Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54 | 690 |
| MT46V64M8BN-6:F | Micron | DDR DRAM, 64MX8, 0.7ns, CMOS, PBGA60 | 680 |
| MT46V16M16CY-5BIT:K | Micron | DDR DRAM, 16MX16, 0.7ns, CMOS, PBGA60 | 676 |
| MT48LC2M32B2TG-6 | Micron | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86 | 670 |
| MT46H32M16LFCK-75 | Micron | DDR1 DRAM, 32MX16, 6ns, CMOS, PBGA60 | 663 |
| MT46V16M16CY-5BIT:M | Micron | DDR DRAM, 16MX16, 0.7ns, CMOS, PBGA60 | 655 |
| IS45S16800F-7CTLA2 | ISSI | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54 | 650 |
| M13S2561616A-5TIG2A | Elite Semi | DDR1 DRAM, 16MX16, 0.7ns, CMOS, PDSO66 | 648 |
| MT48LC8M16A2P-75IT:G | Micron | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54 | 633 |
| MT46V128M8TG-75:A | Micron | DDR DRAM, 128MX8, 0.75ns, CMOS, PDSO66 | 632 |
| HY57V643220CT-6 | SK Hynix | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86 | 620 |
| MSM51V4265E-60TS-K | OKI | EDO DRAM, 256KX16, 60ns, CMOS, PDSO40 | 608 |
| M12L16161A-7BG | Elite Semi | Synchronous DRAM, 1MX16, 6ns, CMOS, PBGA60 | 603 |
| HYB41256-15 | Siemens | Page Mode DRAM, 256KX1, 150ns, CMOS, PDIP16 | 599 |
| IS42S16400J-7TL-TR | ISSI | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54 | 592 |
| AS4C32M16MSA-6BIN | Alliance | Synchronous DRAM, 32MX16, 5.5ns, CMOS, PBGA54 | 574 |
| HYB5117800BSJ-50 | Infineon | Fast Page DRAM, 2MX8, 50ns, CMOS, PDSO28 | 570 |
| NT5CB64M16FP-DII | Nanya | DDR3 DRAM, 64MX16, 0.225ns, CMOS, PBGA96 | 570 |
| K4M561633G-RN75 | Samsung | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54 | 565 |
| MSM51V18165D-60JS | OKI | EDO DRAM, 1MX16, 60ns, CMOS, PDSO42 | 547 |
| AS4C256K16E0-60JC | Alliance Semi | EDO DRAM, 256KX16, 60ns, CMOS, PDSO40 | 541 |
| K4B2G1646Q-BCK0 | Samsung | DDR3 DRAM, 128MX16, 0.225ns, CMOS, PBGA96 | 532 |
| HM538123BJ-7 | Hitachi | Video DRAM, 128KX8, 70ns, CMOS, PDSO40 | 528 |
| KM416C1200BJ-6 | Samsung | Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO42 | 510 |
| IS46DR32801B-3DBLA2 | ISSI | DDR2 DRAM, 8MX32, 0.45ns, CMOS, PBGA126 | 498 |
| HY5DU561622ETP-J | SK Hynix | DDR1 DRAM, 16MX16, 0.7ns, CMOS, PDSO66 | 495 |
| M12L16161A-7TG2Q | Elite Semi | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50 | 490 |
| TC514256BJ-60 | Toshiba | Fast Page DRAM, 256KX4, 60ns, CMOS, PDSO20 | 490 |
| LH604256D-80A | Sharp | Fast Page DRAM, 256KX4, 80ns, CMOS, PDIP20 | 480 |
| M5M4V16165CTP-7ST | Mitsubishi | EDO DRAM, 1MX16, 70ns, CMOS, PDSO44 | 480 |
| MT40A256M16LY-062EAAT:F | Micron | DDR4 DRAM, 256MX16, CMOS, PBGA96 | 480 |
| K4S643232H-TC70 | Samsung | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86 | 479 |
| IS41LV16100C-50TLI | ISSI | EDO DRAM, 1MX16, 50ns, CMOS, PDSO44 | 468 |
| K4S643232H-UC60 | Samsung | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86 | 457 |
| MT41K128M16JT-125IT:K | Micron | DDR DRAM, 128MX16, 0.225ns, CMOS, PBGA96 | 455 |
| MT48LC16M8A2P-75:G | Micron | Synchronous DRAM, 16MX8, 5.4ns, CMOS, PDSO54 | 455 |
| TC514800AJLL-70 | Toshiba | Fast Page DRAM, 512KX8, 70ns, CMOS, PDSO28 | 450 |
| A428316V-35F | AMIC | EDO DRAM, 256KX16, 35ns, CMOS, PDSO40 | 436 |
| M13S128168A-5TG2N | Elite Semi | DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66 | 431 |
| KM49C512BLJ-7 | Samsung | Fast Page DRAM, 512KX9, 70ns, CMOS, PDSO28 | 425 |
| MSM514400D-60SJ | OKI | Fast Page DRAM, 1MX4, 60ns, CMOS, PDSO20 | 423 |
| EDD2516AMTA-6B-E | Elpida | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66 | 416 |
| KM44C4000AK-6 | Samsung | Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24 | 413 |
| MT48LC2M32B2TG-7 | Micron | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86 | 407 |
| KM49C512BJ-7 | Samsung | Fast Page DRAM, 512KX9, 70ns, CMOS, PDSO28 | 405 |
| HM514256AZP-12 | Hitachi | Fast Page DRAM, 256KX4, 120ns, CMOS, PZIP20 | 400 |
| MB81C1001-80PSZ | Fujitsu | Nibble Mode DRAM, 1MX1, 80ns, CMOS, PZIP20 | 396 |
| MSM511664A-10JS | OKI | Fast Page DRAM, 64KX16, 100ns, CMOS, PDSO40 | 395 |
| MT46V16M16CY-5B:M | Micron | DDR1 DRAM, 16MX16, 0.7ns, CMOS, PBGA60 | 390 |
| EDD1216AJTA-6B-E | Elpida | DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66 | 385 |
| MT47H256M8THN-3:M | Micron | DDR2 DRAM, 256MX8, CMOS, PBGA63 | 385 |
| K4S643232E-TC60 | Samsung | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86 | 380 |
| MT48LC8M8A2TG-10 | Micron | Synchronous DRAM, 8MX8, 7ns, CMOS, PDSO54 | 380 |
| TC514256AJ-70 | Toshiba | Fast Page DRAM, 256KX4, 70ns, CMOS, PDSO20 | 375 |
| K4M563233G-HN75 | Samsung | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90 | 357 |
| MT48LC4M16A2TG-75 | Micron | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54 | 357 |
| V58C2512164SAJ5 | ProMOS | DDR1 DRAM, 32MX16, 0.7ns, CMOS, PBGA60 | 350 |
| TC524256BZ-80 | Toshiba | Video DRAM, 256KX4, 80ns, CMOS, PZIP28 | 338 |
| TC511000J-85 | Toshiba | Fast Page DRAM, 1MX1, 85ns, CMOS, PDSO20 | 335 |
| K4T1G164QF-BIE6 | Samsung | DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84 | 328 |
| MT48LC4M16A2TG75ITC | Micron | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54 | 324 |
| K4S641632H-TC600 | Samsung | Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54 | 318 |
| MT48LC4M16A2TG-8E | Micron | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54 | 317 |
| IS42S32200E-7TLI | ISSI | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86 | 313 |
| M5M44256BJ-7 | Mitsubishi | Fast Page DRAM, 256KX4, 70ns, CMOS, PDSO20 | 310 |
| FMP3217CA2-H60ER | Fidelix | DRAM | 300 |
| K4E640412E-TL50 | Samsung | EDO DRAM, 16MX4, 50ns, CMOS, PDSO32 | 300 |
| TC511000AJ-70 | Toshiba | Fast Page DRAM, 1MX1, 70ns, CMOS, PDSO20 | 300 |
| MT48LC8M16A2TG-75:G | Micron | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54 | 291 |
| HM50464CP-12 | Hitachi | Page Mode DRAM, 64KX4, 120ns, NMOS, PQCC18 | 290 |
| MT46H32M16LFBF-5AIT:C | Micron | DDR DRAM, 32MX16, 5ns, CMOS, PBGA60 | 290 |
| K4F640411D-JC60 | Samsung | Fast Page DRAM, 16MX4, 60ns, CMOS, PDSO32 | 284 |
| TC514100ASJ-80 | Toshiba | Fast Page DRAM, 4MX1, 80ns, CMOS, PDSO20 | 284 |
| HM514260CJ-7 | Hitachi | Fast Page DRAM, 256KX16, 70ns, CMOS, PDSO40 | 282 |
| MT48LC4M16A2P-75:G | Micron | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54 | 280 |
| K4S561632H-UI75T | Samsung | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54 | 277 |
| K4M281633F-RN75 | Samsung | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54 | 270 |
| IS42S16100-7T | ISSI | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50 | 269 |
| IS42S16400A-7T | ISSI | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54 | 268 |
| H5TQ4G63AFR-PBC | SK Hynix | DDR3 DRAM, 256MX16, 0.225ns, CMOS, PBGA96 | 260 |
| IBM025161LG5D-6H | IBM | Video DRAM, 256KX16, 60ns, CMOS, PDSO64 | 260 |
| MT46V16M16FG-75L | Micron | DDR DRAM, 16MX16, 0.75ns, CMOS, PBGA60 | 260 |
| HY53C256LF-80 | SK Hynix | Fast Page DRAM, 256KX1, 80ns, CMOS, PQCC18 | 250 |
| IS42S32160A-75BLI | ISSI | Synchronous DRAM, 16MX32, 6ns, CMOS, PBGA90 | 250 |
| MT48LC4M32B2TG-7:GTR | Micron | Synchronous DRAM, 4MX32, 5.5ns, CMOS, PDSO86 | 250 |
| K4E640412D-TC60 | Samsung | EDO DRAM, 16MX4, 60ns, CMOS, PDSO32 | 248 |
| MT47H32M16BN-5E:D | Micron | DDR2 DRAM, 32MX16, 0.6ns, CMOS, PBGA84 | 246 |
| K4S281632I-UC75 | Samsung | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54 | 240 |
| EDB1316BDBH-1DIT-F-D | Micron | LPDDR2 DRAM, 64MX16, CMOS, PBGA134 | 235 |
| IC42S16100-7T | ISSI | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50 | 232 |
| MT48LC16M16A2P-6A:D | Micron | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54 | 232 |
| IS42S16100A1-7T | ISSI | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50 | 230 |
| M5M41000BJ-7 | Mitsubishi | Fast Page DRAM, 1MX1, 70ns, CMOS, PDSO20 | 230 |
| MT41K128M16JT-125XIT:K | Micron | DDR DRAM, 128MX16, CMOS, PBGA96 | 230 |
| IS43TR16640B-15GBLI | ISSI | DDR3 DRAM, 64MX16, CMOS, PBGA96 | 227 |
| MT48LC64M4A2P-7E:D | Micron | Synchronous DRAM, 64MX4, 5.4ns, CMOS, PDSO54 | 227 |
| K4S641632N-LI75T | Samsung | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54 | 220 |
| M3ST-4GSSCL0E-E | Innodisk Corp | DDR DRAM Module, 512MX64, CMOS | 220 |
| HY514260BJC-60 | SK Hynix | Fast Page DRAM, 256KX16, 60ns, CMOS, PDSO40 | 218 |
| M12L64164A-6TG | Elite Semi | Synchronous DRAM, 4MX16, 5.5ns, CMOS, PDSO54 | 216 |
| IM2516SDBATG-6 | IM Intelligent | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54 | 213 |
| K4F660811D-TC60 | Samsung | Fast Page DRAM, 8MX8, 60ns, CMOS, PDSO32 | 213 |
| IM5116D2DABG-25I | IM Intelligent | DDR DRAM, 32MX16, CMOS, PBGA84 | 211 |
| IBM038329NQ6A-7R5 | IBM | Synchronous Graphics RAM, 256KX32, 7ns, CMOS, PQFP100 | 210 |
| MT42L32M32D2AC-25AAT:A | Micron | LPDDR2 DRAM, 32MX32, 5.5ns, CMOS, PBGA134 | 209 |
| MT46V32M16P-6TIT:F | Micron | DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66 | 209 |
| MT4LC1M16C3TG-6 | Micron | Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO44 | 209 |
| TC524259BZ-10 | Toshiba | Video DRAM, 256KX4, 100ns, CMOS, PZIP28 | 207 |
| TS128MSQ64V8U | Transcend Info | DDR2 DRAM Module | 205 |
| HY57V281620HCT-6 | SK Hynix | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54 | 200 |
| HYB514400BT-80 | Infineon | Fast Page DRAM, 1MX4, 80ns, CMOS, PDSO20 | 200 |
| MT48LC1M16A1TG-8AS | Micron | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50 | 195 |
| V53C16256HK50 | Mosel-Vitelic | Fast Page DRAM, 256KX16, 50ns, CMOS, PDSO40 | 192 |
| W949D6KBHX5I | Winbond | 32MX16, 5ns, CMOS, PBGA60 | 191 |
| EDE5108AGSE-5C-E | Elpida | DDR DRAM, 64MX8, 0.5ns, CMOS, PBGA60 | 185 |
| K4H560838D-TCB0 | Samsung | DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66 | 184 |
| MT4C4M4B1TG-6S | Micron | Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24 | 176 |
| KM44C1000CLJ-6 | Samsung | Fast Page DRAM, 1MX4, 60ns, CMOS, PDSO20 | 175 |
| M5M4V16165CTP-7S | Mitsubishi | EDO DRAM, 1MX16, 70ns, CMOS, PDSO44 | 175 |
| W631GG6MB11I | Winbond | DDR3 DRAM, 64MX16, CMOS, PBGA96 | 174 |
| W971GG6SB25I | Winbond | DDR2 DRAM, 64MX16, 0.4ns, CMOS, PBGA84 | 174 |
| HY57V643220CT-7 | SK Hynix | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86 | 170 |
| IS43DR83200A-37CBLI | ISSI | DDR2 DRAM, 32MX8, 0.5ns, CMOS, PBGA60 | 166 |
| MT48LC2M32B2P-7:G | Micron | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86 | 165 |
| HYB514256AJ-10 | Infineon | Fast Page DRAM, 256KX4, 100ns, CMOS, PDSO20 | 164 |
| MT48LC8M16LFB4-8IT:G | Micron | Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54 | 162 |
| TS32MSS64V6F | Transcend Info | Synchronous DRAM Module, 32MX64, 5.4ns, CMOS, PDMA144 | 161 |
| MT47H128M16RT-25E:C | Micron | DDR2 DRAM, 128MX16, 0.4ns, CMOS, PBGA84 | 158 |
| M5M44260CTP-6S | Mitsubishi | Fast Page DRAM, 256KX16, 60ns, CMOS, PDSO40 | 157 |
| MB81C1000A-70P | Fujitsu Semi | Fast Page DRAM, 1MX1, 70ns, CMOS, PDIP18 | 156 |
| IS46R16160F-6BLA2 | ISSI | DDR DRAM, 16MX16, 0.7ns, CMOS, PBGA60 | 155 |
| A42L0616V-50 | AMIC | EDO DRAM, 1MX16, 50ns, CMOS, PDSO44 | 153 |
| MT48LC4M16A2P-75IT:G | Micron | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54 | 153 |
| MB81256-12 | Fujitsu Semi | Page Mode DRAM, 256KX1, 120ns, NMOS, CQCC18 | 150 |
| HY57V161610DTC-8 | SK Hynix | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50 | 146 |
| TC514256BZ-60 | Toshiba | Fast Page DRAM, 256KX4, 60ns, CMOS, PZIP19 | 146 |
| M5M44100CJ-7 | Mitsubishi | Fast Page DRAM, 4MX1, 70ns, CMOS, PDSO20 | 137 |
| HYB5117400BJ-60 | Infineon | Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24 | 135 |
| K4R881869E-GCT9 | Samsung | Rambus DRAM, 16MX18, 32ns, CMOS, PBGA92 | 135 |
| V59C1512164QCF-3 | ProMOS | DDR2 DRAM, 32MX16, CMOS, PBGA84 | 131 |
| AS4C8M16SA-6TIN | Alliance | Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54 | 130 |
| W632GU6KB12I | Winbond | DDR3L DRAM, 128MX16, 0.225ns, CMOS, PBGA96 | 130 |
| MT48LC16M16A2P-6A:G | Micron | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54 | 129 |
| MB8264A-12 | Fujitsu Semi | Page Mode DRAM, 64KX1, 120ns, NMOS, CQCC18 | 125 |
| K4S280832I-UC75 | Samsung | Synchronous DRAM, 16MX8, 5.4ns, CMOS, PDSO54 | 123 |
| HYM64V4045GU-60 | Siemens | EDO DRAM Module, 4MX64, 60ns, CMOS | 121 |
| GM72V161621CT-10K | LG Semi | Synchronous DRAM, 1MX16, 9ns, CMOS, PDSO50 | 120 |
| HY514400AJ-70 | SK Hynix | Fast Page DRAM, 1MX4, 70ns, CMOS, PDSO20 | 120 |
| K4S161622D-TC70 | Samsung | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50 | 120 |
| MSM518122-70JS | OKI | Video DRAM, 128KX8, 70ns, CMOS, PDSO40 | 120 |
| MT47H32M16BN-3IT:D | Micron | DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84 | 120 |
| K4G323222A-QC70 | Samsung | Synchronous Graphics RAM, 1MX32, 5.5ns, CMOS, PQFP100 | 118 |
| AS4C8M16S-7TCN | Alliance | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54 | 116 |
| W9825G2JB-6 | Winbond | Synchronous DRAM, 8MX32, 5ns, CMOS, PBGA90 | 116 |
| MT47H64M16HR-3AIT:H | Micron | DDR2 DRAM, 64MX16, 0.45ns, CMOS, PBGA84 | 114 |
| MT46V8M16P-5B:D | Micron | DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66 | 113 |
| MT48LC16M16A2TG-75 | Micron | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54 | 113 |
| MT41LC256K32D4LG-12S | Micron | Synchronous Graphics RAM, 256KX32, 11ns, CMOS, PQFP100 | 112 |
| MT47H128M8CF-3IT:H | Micron | DDR DRAM, 128MX8, 0.45ns, CMOS, PBGA60 | 110 |
| M5M41000BVP-8 | Mitsubishi | Fast Page DRAM, 1MX1, 80ns, CMOS, PDSO20 | 109 |
| AS4C8M16S-6TCN | Alliance | Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54 | 108 |
| IS42S81600E-7TL | ISSI | Synchronous DRAM, 16MX8, 5.4ns, CMOS, PDSO54 | 108 |
| K4S281632F-TC60 | Samsung | Synchronous DRAM, 8MX16, 5ns, CMOS, PDSO54 | 108 |
| MT48LC4M32B2P-7:GTR | Micron | Synchronous DRAM, 4MX32, 5.5ns, CMOS, PDSO86 | 108 |
| MB81V4260S-70PJ | Fujitsu Semi | Fast Page DRAM, 256KX16, 70ns, CMOS, PDSO40 | 107 |
| NT5CC512M8EN-EK | Nanya | DDR3L DRAM, 512MX8, CMOS, PBGA78 | 105 |
| MT41K256M8DA-125AIT:K | Micron | DDR3L DRAM, 256MX8, CMOS, PBGA78 | 103 |
| MT48LC4M32B2TG-7:L | Micron | Synchronous DRAM, 4MX32, 5.5ns, CMOS, PDSO86 | 101 |
| MT48V8M16LFB4-8IT:G | Micron | Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54 | 101 |
| V58C2512164SDI5 | ProMOS | DRAM | 101 |
| CMS6416LAG-75AI | Fidelix | DRAM | 100 |
| HM514800AJ-8 | Hitachi | Fast Page DRAM, 512KX8, 80ns, CMOS, PDSO28 | 100 |
| M12L64164A-7BG | Elite Semi | Synchronous DRAM, 4MX16, 6ns, CMOS, PBGA54 | 100 |
| M53230224DJ2-C60 | Samsung | EDO DRAM Module, 2MX32, 60ns, CMOS | 100 |
| MT46H16M32LFB5-5:C | Micron | DDR DRAM, 16MX32, 5ns, CMOS, PBGA90 | 100 |
| MT4C1M16E5TG-7 | Micron | EDO DRAM, 1MX16, 70ns, CMOS, PDSO44 | 100 |
| W631GG6KB15I | Winbond | DDR3 DRAM, 64MX16, 0.255ns, CMOS, PBGA96 | 98 |
| IC41LV16100S-50KG | ISSI | EDO DRAM, 1MX16, 50ns, CMOS, PDSO42 | 96 |
| EDD5116AGTA-5B-E | Elpida | DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66 | 95 |
| HY57V641620ET-7 | SK Hynix | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54 | 95 |
| MT46V32M16CY-5BIT:J | Micron | DDR1 DRAM, 32MX16, 0.7ns, CMOS, PBGA60 | 95 |
| MT48LC4M16A2P-7E:G | Micron | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54 | 95 |
| EDE5132AABG-6E-F | Elpida | DDR DRAM, 16MX32, 0.45ns, CMOS, PBGA128 | 90 |
| MT48LC32M8A2P-6A:G | Micron | Synchronous DRAM, 32MX8, 5.4ns, CMOS, PDSO54 | 90 |
| KVR1066D3E7S/4G | Kingston Tech | DDR DRAM Module, 512MX72, CMOS | 89 |
| K4T1G164QF-BCE6 | Samsung | DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84 | 88 |
| MT47H32M8BP-5EIT:B | Micron | DDR2 DRAM, 32MX8, 0.6ns, CMOS, PBGA60 | 88 |
| KM4232W259Q-60 | Samsung | Video DRAM, 256KX32, 60ns, CMOS, PQFP120 | 87 |
| MCM54400AZ70 | Motorola | Fast Page DRAM, 1MX4, 70ns, CMOS, PZIP20 | 87 |
| MT47H64M16HR-25EIT:H | Micron | DDR2 DRAM, 64MX16, 0.4ns, CMOS, PBGA84 | 85 |
| K4H561638J-LCB3 | Samsung | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66 | 82 |
| K4S641632H-TC70 | Samsung | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54 | 82 |
| W632GG6MB11I | Winbond | DDR3 DRAM, 128MX16, CMOS, PBGA96 | 81 |
| AS4C16M16SA-6TCN | Alliance | Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54 | 80 |
| HM514100CS-6 | Hitachi | Fast Page DRAM, 4MX1, 60ns, CMOS, PDSO20 | 80 |
| IS42S16160G-7BLI | ISSI | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54 | 80 |
| K4B2G1646E-BCH9T | Samsung | DDR3 DRAM, 128MX16, 0.255ns, CMOS, PBGA96 | 80 |
| K4S281632C-TC75 | Samsung | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54 | 80 |
| K4S640432E-TC75 | Samsung | Synchronous DRAM, 16MX4, 5.4ns, CMOS, PDSO54 | 80 |
| K4T1G084QF-BCE70 | Samsung | DDR2 DRAM, 128MX8, 0.4ns, CMOS, PBGA60 | 80 |
| MT48LC8M8A2TG-6L:G | Micron | Synchronous DRAM, 8MX8, 5.5ns, CMOS, PDSO54 | 80 |
| IS42S32800B-7BLI | ISSI | Synchronous DRAM, 8MX32, 5.5ns, CMOS, PBGA90 | 79 |
| IS45S32400E-6BLA2 | ISSI | Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90 | 77 |
| MT47H64M8CB-5E | Micron | DDR2 DRAM, 64MX8, 0.6ns, CMOS, PBGA60 | 76 |
| TC511665J-80 | Toshiba | Fast Page DRAM, 64KX16, 80ns, CMOS, PDSO40 | 76 |
| HY531000ALJ-60 | SK Hynix | Fast Page DRAM, 1MX1, 60ns, CMOS, PDSO20 | 75 |
| TMS4164-15NL | Rochester Elec | Page Mode DRAM, 64KX1, 150ns, NMOS, CDIP16 | 75 |
| A43L2616V-7F | AMIC | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54 | 74 |
| IS43TR16512BL-125KBL | ISSI | DDR3L DRAM, 512MX16, CMOS, PBGA96 | 73 |
| MT48LC16M16A2P-7E:D | Micron | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54 | 73 |
| AS4C1M16S-7TCN | Alliance | Synchronous DRAM, 1MX16, 5.4ns, CMOS, PDSO50 | 72 |
| HM51W18160TT-6 | Hitachi | Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO44 | 72 |
| HY5PS561621AFP-28 | SK Hynix | DDR DRAM, 16MX16, 0.45ns, CMOS, PBGA84 | 72 |
| MT43C4257ADJ-7 | Micron | Video DRAM, 256KX4, 70ns, CMOS, PDSO40 | 71 |
| IS42S16160G-7TLI | ISSI | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54 | 70 |
| V53C8256HK45L | Mosel-Vitelic | Fast Page DRAM, 256KX8, 45ns, CMOS, PDSO24 | 69 |
| K4X56163PG-FGC3 | Samsung | DDR DRAM, 16MX16, 6ns, CMOS, PBGA60 | 68 |
| MT47H64M16NF-25E:M | Micron | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84 | 68 |
| M12L64164A-5TIG2M | Elite Semi | Synchronous DRAM, 4MX16, 4.5ns, CMOS, PDSO54 | 66 |
| M12L128168A-5TG | Elite Semi | Synchronous DRAM, 8MX16, 4.5ns, CMOS, PDSO54 | 65 |
| AS4C256M16D4-83BIN | Alliance | DDR4 DRAM, 256MX16, CMOS, PBGA96 | 64 |
| HY5DS573222F-33 | SK Hynix | DDR DRAM, 8MX32, 0.6ns, CMOS, PBGA144 | 64 |
| K4S511632B-UC75 | Samsung | Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54 | 64 |
| HM514270CJ-7 | Hitachi | Fast Page DRAM, 256KX16, 70ns, CMOS, PDSO40 | 63 |
| W988D2FBJX6I | Winbond | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90 | 63 |
| MT4C1M16C3DJ-6 | Micron | Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO42 | 62 |
| W632GG6KB-12 | Winbond | DDR3 DRAM, 128MX16, 0.225ns, CMOS, PBGA96 | 62 |
| M5M44256AL-10 | Mitsubishi | Fast Page DRAM, 256KX4, 100ns, CMOS, PZIP19 | 60 |
| MT49H16M36BM-33:A | Micron | DDR DRAM, 16MX36, 20ns, CMOS, PBGA144 | 60 |
| IS42S32400F-7TL | ISSI | Synchronous DRAM, 4MX32, 5.4ns, CMOS, PDSO86 | 59 |
| MT47H32M16HR-25EIT:G | Micron | DDR2 DRAM, 32MX16, 0.4ns, CMOS, PBGA84 | 59 |
| W9725G6JB-25 | Winbond | DDR2 DRAM, 16MX16, 0.4ns, CMOS, PBGA84 | 57 |
| K4S561632H-UC75 | Samsung | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54 | 56 |
| KM416V4104AS-6 | Samsung | EDO DRAM, 4MX16, 60ns, CMOS, PDSO50 | 56 |
| MT46H32M16LFBF-6IT:C | Micron | DDR1 DRAM, 32MX16, 5ns, CMOS, PBGA60 | 56 |
| NT5CC512M8DN-DI | Nanya | DDR3L DRAM, 512MX8, CMOS, PBGA78 | 55 |
| HY5117400BT-60 | SK Hynix | Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24 | 54 |
| IS42S16800D-7TLI | ISSI | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54 | 52 |
| IS42S32400F-6BLI | ISSI | Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90 | 52 |
| MT48H8M32LFB5-75IT:G | Micron | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90 | 52 |
| MT48LC32M16A2P-75:C | Micron | Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54 | 51 |
| K4S280832O-LC60 | Samsung | Synchronous DRAM, 16MX8, 5ns, CMOS, PDSO54 | 50 |
| M470L3224HU0-CB3 | Samsung | DDR DRAM Module, 32MX64, 0.7ns, CMOS | 50 |
| M5M465165BTP-5S | Mitsubishi | EDO DRAM, 4MX16, 50ns, CMOS, PDSO44 | 50 |
| MB81C1000A-70PFTR | Fujitsu Semi | Fast Page DRAM, 1MX1, 70ns, CMOS, PDSO20 | 50 |
| MT41K256M8DA-125:M | Micron | DDR DRAM, 256MX8, 0.225ns, CMOS, PBGA78 | 50 |
| MT46V16M16D1TG-75ZL | Micron | DDR DRAM, 16MX16, 0.75ns, CMOS, PDSO66 | 50 |
| GM71C17403CJ-6 | SK Hynix | EDO DRAM, 4MX4, 60ns, CMOS, PDSO24 | 48 |
| M12L128168A-6TG2N | Elite Semi | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54 | 48 |
| MT48LC16M16A2TG-75IT | Micron | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54 | 47 |
| KM416C254DJ-5 | Samsung | EDO DRAM, 256KX16, 50ns, CMOS, PDSO40 | 46 |
| MT8KTF51264HZ-1G6E1 | Micron | DDR DRAM Module, 512MX64, CMOS, PDMA204 | 46 |
| AS4C256K16F0-50JC | Alliance Semi | Fast Page DRAM, 256KX16, 50ns, CMOS, PDSO40 | 45 |
| HYI39S128800FE-7 | Qimonda | Synchronous DRAM, 16MX8, 5.4ns, CMOS, PDSO54 | 45 |
| MT40A512M16JY-083E:B | Micron | DDR4 DRAM, 512MX16, CMOS, PBGA96 | 45 |
| MT48LC4M16A2P-6IT:G | Micron | Synchronous DRAM, 4MX16, 5.5ns, CMOS, PDSO54 | 45 |
| IS42S16320B-75ETL | ISSI | Synchronous DRAM, 32MX16, 5.5ns, CMOS, PDSO54 | 44 |
| HY53C464LS-80 | SK Hynix | Fast Page DRAM, 64KX4, 80ns, CMOS, PDIP18 | 43 |
| MT47H32M16BN-3 | Micron | DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84 | 43 |
| NT5CC256M8IN-DI | Nanya | DDR3L DRAM, 256MX8, 0.225ns, CMOS, PBGA78 | 43 |
| V54C3128164VCI7I | ProMOS | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54 | 42 |
| IS42S32400B-6TL | ISSI | Synchronous DRAM, 4MX32, 5.4ns, CMOS, PDSO86 | 41 |
| K4S513233F-EL75 | Samsung | Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90 | 41 |
| K4S643232H-UC70 | Samsung | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86 | 41 |
| M5M41000BJ-7T | Mitsubishi | Fast Page DRAM, 1MX1, 70ns, CMOS, PDSO20 | 41 |
| AS4C2M32S-6TIN | Alliance | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86 | 40 |
| AS4C64M16MD1A-5BIN | Alliance | DDR1 DRAM, 64MX16, 5ns, CMOS, PBGA60 | 40 |
| AS4C64M8D2-25BCN | Alliance | DDR2 DRAM, 64MX8, 0.4ns, CMOS, PBGA60 | 40 |
| H5PS5162FFR-Y5I | SK Hynix | DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84 | 40 |
| HY534256AS-70 | SK Hynix | Fast Page DRAM, 256KX4, 70ns, CMOS, PDIP20 | 40 |
| IS43TR16256AL-125KBL | ISSI | DDR DRAM, 256MX16, 0.1ns, CMOS, PBGA96 | 40 |
| K4D623237A-QC55 | Samsung | DDR DRAM, 2MX32, 5.5ns, CMOS, PQFP100 | 40 |
| MT48LC16M16A2P-75:D | Micron | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54 | 40 |
| MT48LC8M16A2TG-75I | Micron | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54 | 40 |
| IS42S32160D-7BLI | ISSI | Synchronous DRAM, 16MX32, 5.4ns, CMOS, PBGA90 | 39 |
| MT48LC2M32B2P-6:G | Micron | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86 | 39 |
| KM416V1000BJ-5 | Samsung | Fast Page DRAM, 1MX16, 50ns, CMOS, PDSO42 | 38 |
| K4H561638J-LCCC | Samsung | DDR DRAM, 16MX16, 0.65ns, CMOS, PDSO66 | 37 |
| M12L16161A-7TIG2Q | Elite Semi | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50 | 37 |
| NT5TU32M16DG-AC | Nanya | DDR2 DRAM, 32MX16, 0.4ns, CMOS, PBGA84 | 37 |
| HYB511000A-70 | Infineon | Fast Page DRAM, 1MX1, 70ns, CMOS, PDSO20 | 36 |
| KM41C256P-8 | Samsung | Fast Page DRAM, 256KX1, 80ns, CMOS, PDIP16 | 36 |
| UPD424400GS-60-9KD | Renesas | Fast Page DRAM, 1MX4, 60ns, CMOS, PDSO20 | 36 |
| HB52F649E1-75B | Hitachi | Synchronous DRAM Module, 64MX72, 6.3ns, CMOS | 35 |
| W971GG6SB-18 | Winbond | DDR2 DRAM, 64MX16, 0.35ns, CMOS, PBGA84 | 35 |
| AS4C32M16D1-5BCN | Alliance | DDR1 DRAM, 32MX16, 0.7ns, CMOS, PBGA60 | 33 |
| K4H511638F-LCCC | Samsung | DDR1 DRAM, 32MX16, 0.65ns, CMOS, PDSO66 | 32 |
| KM41C256P-7 | Samsung | Fast Page DRAM, 256KX1, 70ns, CMOS, PDIP16 | 32 |
| MT46H8M32LFB5-5:H | Micron | DDR DRAM, 8MX32, 5ns, CMOS, PBGA90 | 32 |
| AS4C16M16D1-5BCN | Alliance | Synchronous DRAM, 16MX16, 0.7ns, CMOS, PBGA60 | 30 |
| IS43TR16640A-15GBLI | ISSI | DDR3 DRAM, 64MX16, 12ns, CMOS, PBGA96 | 30 |
| K4M561633G-BN75 | Samsung | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54 | 30 |
| MT48LC16M8A2P-7E:L | Micron | Synchronous DRAM, 16MX8, 5.4ns, CMOS, PDSO54 | 30 |
| MT48LC16M8A2TG-8E | Micron | Synchronous DRAM, 16MX8, 6ns, CMOS, PDSO54 | 30 |
| K4S641632F-TC75 | Samsung | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54 | 29 |
| K4E641612D-TL60 | Samsung | EDO DRAM, 4MX16, 60ns, CMOS, PDSO50 | 28 |
| K4H511638C-UCB3 | Samsung | DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66 | 28 |
| MT48LC4M32B2TG-7:G | Micron | Synchronous DRAM, 4MX32, 5.5ns, CMOS, PDSO86 | 28 |
| NT2GT64U8HD0BN-3C | Nanya | DDR DRAM Module, 256MX64, 0.52ns, CMOS | 28 |
| MT48LC16M16A2TG-6A:D | Micron | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54 | 27 |
| MT4LC1M16E5TG-5S | Micron | EDO DRAM, 1MX16, 50ns, CMOS, PDSO44 | 27 |
| AS4C8M16SA-7TCN | Alliance | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54 | 26 |
| K4E151612D-TC50 | Samsung | EDO DRAM, 1MX16, 50ns, CMOS, PDSO44 | 26 |
| MT47H64M16BT-37E:A | Micron | DDR2 DRAM, 64MX16, 0.5ns, CMOS, PBGA92 | 26 |
| EDE2116ABSE-6E-E | Elpida | DDR DRAM, 128MX16, 0.45ns, CMOS, PBGA92 | 25 |
| H5PS1G83JFR-S6I | SK Hynix | DDR DRAM, 128MX8, 0.4ns, CMOS, PBGA60 | 25 |
| K4S561632E-TC75 | Samsung | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54 | 25 |
| K4S561632H-UC750 | Samsung | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54 | 25 |
| KVR667D2S5/2G | Kingston Tech | DRAM | 25 |
| MT46V32M16TG-5B:F | Micron | DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66 | 25 |
| MT47H32M16NF-25EIT:H | Micron | DDR DRAM, 32MX16, 0.4ns, CMOS, PBGA84 | 25 |
| MT47H64M16HR-3IT:E | Micron | DDR2 DRAM, 64MX16, 0.45ns, CMOS, PBGA84 | 25 |
| TC511002AJ-80 | Toshiba | Static Column DRAM, 1MX1, 80ns, CMOS, PDSO20 | 25 |
| TC5117400CSJ-60 | Toshiba | Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24 | 25 |
| IS42S32800D-7BL | ISSI | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PBGA90 | 24 |
| K4M281633H-BN75 | Samsung | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54 | 24 |
| MT42C4256Z-7 | Micron | Video DRAM, 256KX4, 70ns, CMOS, PZIP28 | 24 |
| IS43DR16128-3DBLI | ISSI | DDR DRAM, 128MX16, 0.45ns, CMOS, PBGA84 | 23 |
| MT46H8M32LFB5-5IT:H | Micron | DDR DRAM, 8MX32, 5ns, CMOS, PBGA90 | 23 |
| K4S561632C-TC75 | Samsung | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54 | 22 |
| MT48LC4M16A2TG-75I | Micron | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54 | 22 |
| W948D6FBHX5E | Winbond | 8MX16, 5ns, CMOS, PBGA60 | 22 |
| AS4C4M32S-7BCN | Alliance | Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90 | 21 |
| K4S561632B-TC75 | Samsung | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54 | 21 |
| MCM517400CT60 | Motorola | Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24 | 21 |
| MT41K64M16TW-107IT:J | Micron | DDR3L DRAM, 64MX16, CMOS, PBGA96 | 21 |
| TC59S1616AFT-10 | Toshiba | Synchronous DRAM, 1MX16, 8.5ns, CMOS, PDSO50 | 21 |
| AS4C256M8D3-12BCN | Alliance | DDR3 DRAM, 256MX8, CMOS, PBGA78 | 20 |
| K4M283233H-HN75 | Samsung | Synchronous DRAM, 4MX32, 7.5ns, CMOS, PBGA90 | 20 |
| MT41J64M16JT-15EIT:G | Micron | DDR3 DRAM, 64MX16, 0.125ns, CMOS, PBGA96 | 20 |
| MT46H32M16LFCK-6IT | Micron | DDR DRAM, 32MX16, 5.5ns, CMOS, PBGA60 | 20 |
| TC511000Z-12 | Toshiba | DRAM | 20 |
| TC59LM806CFT-50 | Toshiba | DDR DRAM, 32MX8, 0.65ns, MOS, PDSO66 | 20 |
| V53C518160AT50 | Mosel-Vitelic | Fast Page DRAM, 1MX16, 50ns, CMOS, PDSO44 | 20 |
| IS42S16400B-7T | ISSI | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54 | 19 |
| IS46TR16640A-125JBLA1 | ISSI | DDR DRAM, 64MX16, 12.5ns, CMOS, PBGA96 | 19 |
| MT46V16M16P-6TIT:K | Micron | DDR1 DRAM, 16MX16, 0.7ns, CMOS, PDSO66 | 19 |
| TC514800AJL-80 | Toshiba | Fast Page DRAM, 512KX8, 80ns, CMOS, PDSO28 | 19 |
| HM5117400ATS-6 | Hitachi | Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24 | 18 |
| HM514256AZP-8 | Hitachi | Fast Page DRAM, 256KX4, 80ns, CMOS, PZIP20 | 18 |
| HYB5118165BSJ-50 | Infineon | EDO DRAM, 1MX16, 50ns, CMOS, PDSO42 | 18 |
| IS42S32200C1-6TL | ISSI | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86 | 18 |
| IS42VM16800H-75BLI | ISSI | Synchronous DRAM, 8MX16, 6ns, CMOS, PBGA54 | 18 |
| MT46H64M32LFBQ-48IT:C | Micron | DDR DRAM, 64MX32, 4.8ns, CMOS, PBGA90 | 18 |
| MT47H32M16HR-3IT:G | Micron | DDR2 DRAM, 32MX16, 0.45ns, CMOS, PBGA84 | 18 |
| MT46V8M16P-6TIT | Micron | DDR DRAM, 8MX16, 0.7ns, CMOS, PDSO66 | 17 |
| V53C318160AT50 | Mosel-Vitelic | Fast Page DRAM, 1MX16, 50ns, CMOS, PDSO44 | 17 |
| AS4C4M32SA-6TCN | Alliance | Synchronous DRAM, 4MX32, 5.4ns, CMOS, PDSO86 | 16 |
| HM50256P-15 | Hitachi | Page Mode DRAM, 256KX1, 150ns, NMOS, PDIP16 | 16 |
| HM514400BS-7 | Hitachi | Fast Page DRAM, 1MX4, 70ns, CMOS, PDSO20 | 16 |
| MCM516400J60 | Motorola | Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24 | 16 |
| MT48LC16M16A2TG-7E | Micron | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54 | 16 |
| MT48LC2M32B2TG-5 | Micron | Synchronous DRAM, 2MX32, 4.5ns, CMOS, PDSO86 | 16 |
| V59C1512164QDJ3 | ProMOS | DDR2 DRAM, 32MX16, 0.45ns, CMOS, PBGA84 | 16 |
| IS43DR16320D-25DBLI | ISSI | DDR2 DRAM, 32MX16, 0.4ns, CMOS, PBGA84 | 15 |
| IS43R16320D-6BL | ISSI | DDR DRAM, 32MX16, 0.7ns, CMOS, PBGA60 | 15 |
| M12L64322A-6TG | Elite Semi | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86 | 15 |
| MSM56V16160F-8TS-K | Lapis | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50 | 15 |
| MT47H64M8B6-37E:D | Micron | DDR DRAM, 64MX8, 0.5ns, CMOS, PBGA60 | 15 |
| NT5CB256M16CP-DII | Nanya | DDR3 DRAM, 256MX16, 0.225ns, CMOS, PBGA96 | 15 |
| M471A4G43MB1-CTD | Samsung | DDR4 DRAM Module, 4GX64, 18ns, CMOS, PDMA260 | 14 |
| MT16D232G-6X | Micron | EDO DRAM Module, 2MX32, 60ns, CMOS | 14 |
| MT41J128M16HA-15E:D | Micron | DDR DRAM, 128MX16, 0.255ns, CMOS, PBGA96 | 14 |
| MT48LC32M16A2P-75IT:C | Micron | Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54 | 14 |
| TC521000J | Toshiba | Video DRAM, 256KX4, 20ns, CMOS, PDSO40 | 14 |
| AS4C2M32S-7BCN | Alliance | Synchronous DRAM, 2MX32, 5.4ns, CMOS, PBGA90 | 13 |
| HM5117400TS-6 | Hitachi | Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24 | 13 |
| IS42S16400F-7TLI | ISSI | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54 | 13 |
| KVR133X72RC3/512 | Kingston Tech | Synchronous DRAM Module, 64MX72, 5.4ns, CMOS, PDMA168 | 13 |
| KVR16S11S8/4 | Kingston Tech | DDR DRAM Module, 512MX64, CMOS | 13 |
| MT46V32M16CY-5B:J | Micron | DDR1 DRAM, 32MX16, 0.7ns, CMOS, PBGA60 | 13 |
| IS41LV16100C-50KLI | ISSI | EDO DRAM, 1MX16, 50ns, CMOS, PDSO42 | 12 |
| KM48C2100AJ-6 | Samsung | Fast Page DRAM, 2MX8, 60ns, CMOS, PDSO28 | 12 |
| HY57V161610DTC-7 | SK Hynix | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50 | 11 |
| V53C16258LT50 | Mosel-Vitelic | EDO DRAM, 256KX16, 50ns, CMOS, PDSO40 | 11 |
| A43L0616BV-6F | AMIC | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50 | 10 |
| HM534251BZ-8 | Hitachi | Video DRAM, 256KX4, 80ns, CMOS, PZIP28 | 10 |
| IS42S16400-10T | ISSI | Synchronous DRAM, 4MX16, 7ns, CMOS, PDSO54 | 10 |
| IS42S32400B-7TL | ISSI | Synchronous DRAM, 4MX32, 5.4ns, CMOS, PDSO86 | 10 |
| K4H561638N-LCCC | Samsung | DDR DRAM, 16MX16, 0.65ns, CMOS, PDSO66 | 10 |
| K4S281632O-LC60 | Samsung | DDR DRAM, 8MX16, 5ns, CMOS, PDSO54 | 10 |
| K4S281633D-RL75 | Samsung | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54 | 10 |
| K4S561632E-TC600 | Samsung | Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54 | 10 |
| MT47H128M16HG-37E:A | Micron | DDR2 DRAM, 128MX16, 0.5ns, CMOS, PBGA84 | 10 |
| MT48LC16M16A2P-75IT:D | Micron | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54 | 10 |
| AS4C256M16D3C-12BCN | Alliance | DDR3 DRAM, 256MX16, CMOS, PBGA96 | 9 |
| AS4C4M32SA-6TIN | Alliance | Synchronous DRAM, 4MX32, 5.4ns, CMOS, PDSO86 | 9 |
| MSM5118160F-60JS | Lapis | Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO42 | 9 |
| MT48LC16M16A2P-75L | Micron | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54 | 9 |
| MT48LC16M16A2TG-6A | Micron | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54 | 9 |
| MT48LC8M16A2P-7E:G | Micron | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54 | 9 |
| W987D2HBJX6I | Winbond | Synchronous DRAM, 4MX32, 5.4ns, CMOS, PBGA90 | 9 |
| AS4C16M16S-7TCN | Alliance | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54 | 8 |
| GM71V18163BT-6 | SK Hynix | EDO DRAM, 1MX16, 60ns, CMOS, PDSO44 | 8 |
| GM71V18163CT-6 | SK Hynix | EDO DRAM, 1MX16, 60ns, CMOS, PDSO44 | 8 |
| HYB5116400BJ-60 | Infineon | Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24 | 8 |
| IS42S16160D-7TLI | ISSI | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54 | 8 |
| IS42S16400J-7BLI | ISSI | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54 | 8 |
| IS43DR86400C-3DBLI | ISSI | DDR DRAM, 64MX8, 0.45ns, CMOS, PBGA60 | 8 |
| K4T1G164QA-ZCD5 | Samsung | DDR2 DRAM, 64MX16, 0.5ns, CMOS, PBGA84 | 8 |
| AS4C256M16D3A-12BCN | Alliance | DDR3 DRAM, 256MX16, CMOS, PBGA96 | 7 |
| IS42S32800D-7TL | ISSI | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PDSO86 | 7 |
| IS43DR86400B-3DBLI | ISSI | DDR DRAM, 64MX8, 0.45ns, CMOS, PBGA60 | 7 |
| K4S511632M-TC75 | Samsung | Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54 | 7 |
| AS4C128M16D3LB-12BIN | Alliance | DDR3L DRAM, 128MX16, CMOS, PBGA96 | 6 |
| EDY4016AABG-DR-F-D | Micron | DDR4 DRAM, 256MX16, CMOS, PBGA96 | 6 |
| H5TQ2G63BFR-PBC | SK Hynix | DDR3 DRAM, 128MX16, 20ns, CMOS, PBGA96 | 6 |
| IS42S16320D-7TLI | ISSI | Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54 | 6 |
| K4B1G1646G-BCF8 | Samsung | DDR DRAM, 64MX16, 0.3ns, CMOS, PBGA96 | 6 |
| MT48LC16M16A2P-7EIT:D | Micron | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54 | 6 |
| MT48LC64M8A2P-75 | Micron | Synchronous DRAM, 64MX8, 5.4ns, CMOS, PDSO54 | 6 |
| V53C16258HK35 | Mosel-Vitelic | EDO DRAM, 256KX16, 35ns, CMOS, PDSO40 | 6 |
| AS4C512M16D3L-12BCN | Alliance | DDR3L DRAM, 512MX16, 0.225ns, CMOS, PBGA96 | 5 |
| IBM13M64734BCA-75AT | IBM | Synchronous DRAM Module, 64MX72, 5.65ns, CMOS | 5 |
| IS43QR16256A-083RBL | ISSI | DDR4 DRAM, 256MX16, CMOS, PBGA96 | 5 |
| K4A8G165WB-BIRC | Samsung | DDR4 DRAM, 512MX16, CMOS, PBGA96 | 5 |
| K4S641632H-TL75 | Samsung | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54 | 5 |
| MT48H16M16LFBF-75:H | Micron | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PBGA54 | 5 |
| MT48LC2M32B2TG-7TR:G | Micron | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86 | 5 |
| MT53E256M32D2DS-046AIT:B | Micron | LPDDR4 DRAM, 256MX32, CMOS, PBGA200 | 5 |
| V54C3256164VHI6I | ProMOS | DRAM | 5 |
| HYB39SC128160FE-7 | Qimonda | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54 | 4 |
| IS42S32800D-7TLI | ISSI | Synchronous DRAM, 8MX32, 5.4ns, CMOS, PDSO86 | 4 |
| K4S641632F-TC70 | Samsung | Synchronous DRAM, 4MX16, 6ns, CMOS, PDSO54 | 4 |
| K4T1G164QE-HCE6 | Samsung | DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84 | 4 |
| TMS626162-12DGE | TI | Synchronous DRAM, 1MX16, 9ns, MOS, PDSO50 | 4 |
| HYB514171BJ-70 | Siemens | Fast Page DRAM, 256KX16, 70ns, CMOS, PDSO40 | 3 |
| MT48LC4M16A2P-6:G | Micron | Synchronous DRAM, 4MX16, 5.5ns, CMOS, PDSO54 | 3 |
| MT48LC8M16A2B4-75IT:G | Micron | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PBGA54 | 3 |
| NT5CB128M16FP-DII | Nanya | DDR3 DRAM, 128MX16, 0.225ns, CMOS, PBGA96 | 3 |
| HYS64D32020HDL-5-C | Qimonda | DDR DRAM Module, 32MX64, 0.5ns, CMOS | 2 |
| MT41K256M16TW-107:P | Micron | DDR3L DRAM, 256MX16, CMOS, PBGA96 | 2 |
| MT48LC4M16A2P-75IT | Micron | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54 | 2 |
| MT53E256M32D2DS-046WT:B | Micron | LPDDR4 DRAM, 256MX32, CMOS, PBGA200 | 2 |
| MT46V16M16TG-6T | Micron | DDR1 DRAM, 16MX16, 0.7ns, CMOS, PDSO66 | 1 |
| MT47H64M16BT-5E:A | Micron | DDR DRAM, 64MX16, 0.6ns, CMOS, PBGA92 | 1 |
| A43L0616BV-7F | AMIC | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50 | on request |
| A43L2616V-7 | AMIC | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54 | on request |
| AS4C1M16E5-60JC | Alliance Semi | EDO DRAM, 1MX16, 60ns, CMOS, PDSO42 | on request |
| AS4C32M16MSA-6BINTR | Alliance | Synchronous DRAM | on request |
| EDE1116ACSE-6E-E | Elpida | Synchronous DRAM, 64MX16, 0.45ns, CMOS, PBGA84 | on request |
| GLT440L16-35TC | G-Link Tech | EDO DRAM, 256KX16, 35ns, CMOS, PDSO40 | on request |
| GM71C1000BZ-70 | Goldstar | Fast Page DRAM, 1MX1, 70ns, CMOS, PZIP20 | on request |
| HM5117400S-6 | Hitachi | Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24 | on request |
| HM514400CZ-6 | Hitachi | Fast Page DRAM, 1MX4, 60ns, CMOS, PZIP20 | on request |
| HM5257165BTD-75 | Elpida | Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54 | on request |
| HM534252ZP-10 | Hitachi | Video DRAM, 256KX4, 100ns, CMOS, PZIP28 | on request |
| HY51C1000LS-10 | SK Hynix | Fast Page DRAM, 1MX1, 100ns, CMOS, PDIP18 | on request |
| HY57V161610ET-7 | SK Hynix | Synchronous DRAM, 1MX16, 6ns, CMOS, PDSO50 | on request |
| HY57V28420HCT-H | SK Hynix | Synchronous DRAM, 32MX4, 5.4ns, CMOS, PDSO54 | on request |
| HY57V28820HCT-H | SK Hynix | Synchronous DRAM, 16MX8, 5.4ns, CMOS, PDSO54 | on request |
| HY57V561620FTP-H | SK Hynix | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54 | on request |
| HY57V56420T-H | SK Hynix | Synchronous DRAM, 64MX4, 5.4ns, CMOS, PDSO54 | on request |
| HYB18TC1G160BF-3S | Qimonda | DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84 | on request |
| HYB25D512160CE-6 | Qimonda | DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66 | on request |
| HYB3165165BT-50 | Infineon | EDO DRAM, 4MX16, 50ns, CMOS, PDSO50 | on request |
| HYB39SC128169EE-7 | Qimonda | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54 | on request |
| HYB511000BJ-50 | Siemens | Fast Page DRAM, 1MX1, 50ns, CMOS, PDSO20 | on request |
| HYM7V64401BTQG-10 | SK Hynix | Synchronous DRAM Module, 4MX64, 8ns, CMOS | on request |
| IC41LV16256-50T | ISSI | EDO DRAM, 256KX16, 50ns, CMOS, PDSO40 | on request |
| IS42S16100C1-7T | ISSI | Synchronous DRAM, 1MX16, 5.5ns, CMOS, PDSO50 | on request |
| IS42S16160A-7T | ISSI | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54 | on request |
| IS42S32160B-7TLI | ISSI | Synchronous DRAM, 16MX32, 5.4ns, CMOS, PDSO86 | on request |
| K4D261638K-LC40 | Samsung | GDDR1 DRAM, 8MX16, 0.6ns, CMOS, PDSO66 | on request |
| K4F151611D-JC60 | Samsung | Fast Page DRAM, 1MX16, 60ns, CMOS, PDSO42 | on request |
| K4G323222M-PC60 | Samsung | Synchronous Graphics RAM, 1MX32, 5.5ns, CMOS, PQFP100 | on request |
| K4H280438B-TCA0 | Samsung | DDR DRAM, 32MX4, 0.8ns, CMOS, PDSO66 | on request |
| K4H510838C-UCB3 | Samsung | DDR DRAM, 64MX8, 0.7ns, CMOS, PDSO66 | on request |
| K4H560838C-TCB0 | Samsung | DDR DRAM, 32MX8, 0.75ns, CMOS, PDSO66 | on request |
| K4M28163PF-RG75 | Samsung | Synchronous DRAM, 8MX16, 6ns, CMOS, PBGA54 | on request |
| K4S280432C-TC75 | Samsung | Synchronous DRAM, 32MX4, 5.4ns, CMOS, PDSO54 | on request |
| K4S280832C-TC75 | Samsung | Synchronous DRAM, 16MX8, 5.4ns, CMOS, PDSO54 | on request |
| K4S511632B-TC75 | Samsung | Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54 | on request |
| K4S511632D-UC75 | Samsung | Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54 | on request |
| K4S560432B-TC75 | Samsung | Synchronous DRAM, 64MX4, 5.4ns, CMOS, PDSO54 | on request |
| K4S560432C-TC75 | Samsung | Synchronous DRAM, 64MX4, 5.4ns, CMOS, PDSO54 | on request |
| K4S561632E-TC60 | Samsung | Synchronous DRAM, 16MX16, 5ns, CMOS, PDSO54 | on request |
| K4S561632E-UC75 | Samsung | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54 | on request |
| K4S640832H-UC75 | Samsung | Synchronous DRAM, 8MX8, 5.4ns, CMOS, PDSO54 | on request |
| K4S641632H-TC60 | Samsung | Synchronous DRAM, 4MX16, 5ns, CMOS, PDSO54 | on request |
| K4S641633F-RL75 | Samsung | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54 | on request |
| K4S641633H-RN75 | Samsung | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PBGA54 | on request |
| K4S643232E-TC70 | Samsung | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86 | on request |
| K4T51163QC-ZCD5 | Samsung | DDR DRAM, 32MX16, 0.5ns, CMOS, PBGA84 | on request |
| KM4132G112Q-C | Samsung | Synchronous Graphics RAM, 1MX32, 5ns, CMOS, PQFP100 | on request |
| KM4132G271BTQ-8 | Samsung | Synchronous Graphics RAM, 256KX32, 6.5ns, CMOS, PQFP100 | on request |
| KM416C256D-J6 | Samsung | Fast Page DRAM, 256KX16, 60ns, CMOS, PDSO40 | on request |
| KM416V254DT-6 | Samsung | EDO DRAM, 256KX16, 60ns, CMOS, PDSO40 | on request |
| KM44V4100CS-L6 | Samsung | Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24 | on request |
| M12L128168A-5BG2L | Elite Semi | Synchronous DRAM, 8MX16, 4.5ns, CMOS, PBGA54 | on request |
| M12L128168A-6T | Elite Semi | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54 | on request |
| M12L64164A-6T | Elite Semi | Synchronous DRAM, 4MX16, 5.5ns, CMOS, PDSO54 | on request |
| M312L6423BT0-CA0 | Samsung | DDR DRAM Module, 64MX72, 0.8ns, CMOS | on request |
| M368L6423JUN-CB3 | Samsung | DDR DRAM Module, 64MX64, 0.7ns, CMOS | on request |
| M378T3354CZ3-CD5 | Samsung | DDR DRAM Module, 32MX64, 0.5ns, CMOS | on request |
| M378T3354EZ3-CE6 | Samsung | DDR DRAM Module, 32MX64, 0.45ns, CMOS | on request |
| M390S6450BTU-C75 | Samsung | Synchronous DRAM Module, 64MX72, 5.4ns, CMOS | on request |
| M390S6450CT1-C7A | Samsung | Synchronous DRAM Module, 64MX72, 5.4ns, CMOS | on request |
| M470L3224HU0-CB0 | Samsung | DDR DRAM Module, 32MX64, 0.75ns, CMOS | on request |
| M5M465165BTP-6 | Mitsubishi | EDO DRAM, 4MX16, 60ns, CMOS, PDSO44 | on request |
| MEM2G16D2DABG-25 | Memphis Elec | DDR DRAM, 128MX16, 0.4ns, CMOS, PBGA84 | on request |
| MSM51C464A-70JS | OKI | Fast Page DRAM, 64KX4, 70ns, CMOS, PQCC18 | on request |
| MT40A1G16KD-062E:E | Micron | DDR4 DRAM, 1GX16, CMOS, PBGA96 | on request |
| MT41K256M16TW-107IT:P | Micron | DDR DRAM, 256MX16, 20ns, CMOS, PBGA96 | on request |
| MT46V16M16P-5B:M | Micron | DDR1 DRAM, 16MX16, 0.7ns, CMOS, PDSO66 | on request |
| MT46V16M16P-75:F | Micron | DDR DRAM, 16MX16, 0.75ns, CMOS, PDSO66 | on request |
| MT46V16M16TG-6T:F | Micron | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66 | on request |
| MT46V16M16TG-6TIT | Micron | DDR DRAM, 16MX16, 0.7ns, CMOS, PDSO66 | on request |
| MT46V32M16P-6T:F | Micron | DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66 | on request |
| MT46V32M16TG-6T | Micron | DDR DRAM, 32MX16, 0.7ns, CMOS, PDSO66 | on request |
| MT46V32M16TG-75Z:C | Micron | DDR DRAM, 32MX16, 0.75ns, CMOS, PDSO66 | on request |
| MT46V32M4TG-7 | Micron | DDR DRAM, 32MX4, 0.75ns, CMOS, PDSO66 | on request |
| MT47H128M8HQ-3:E | Micron | DDR DRAM, 128MX8, 0.45ns, CMOS, PBGA60 | on request |
| MT47H32M16BN-3:D | Micron | DDR DRAM, 32MX16, 0.45ns, CMOS, PBGA84 | on request |
| MT47H64M16BT-37E | Micron | DDR DRAM, 64MX16, 0.5ns, CMOS, PBGA92 | on request |
| MT47H64M16HR-25IT:H | Micron | DDR DRAM, 64MX16, 0.4ns, CMOS, PBGA84 | on request |
| MT47H64M16HR-3IT:G | Micron | DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84 | on request |
| MT47H64M16HR-3IT:H | Micron | DDR DRAM, 64MX16, 0.45ns, CMOS, PBGA84 | on request |
| MT48H16M32L2B5-8 | Micron | Synchronous DRAM, 16MX32, CMOS, PBGA90 | on request |
| MT48H8M32LFB5-8:G | Micron | Synchronous DRAM, 8MX32, 7ns, CMOS, PBGA90 | on request |
| MT48LC16M16A2P-75L:D | Micron | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54 | on request |
| MT48LC16M16A2P-7EIT:G | Micron | Synchronous DRAM, 16MX16, 5.4ns, CMOS, PDSO54 | on request |
| MT48LC2M32B2B5-7IT:G | Micron | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PBGA90 | on request |
| MT48LC2M32B2TG-6:G | Micron | Synchronous DRAM, 2MX32, 5.5ns, CMOS, PDSO86 | on request |
| MT48LC32M16A2P-75 | Micron | Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54 | on request |
| MT48LC32M16A2TG-75 | Micron | Synchronous DRAM, 32MX16, 5.4ns, CMOS, PDSO54 | on request |
| MT48LC4M16A2TG-75IT:G | Micron | Synchronous DRAM, 4MX16, 5.4ns, CMOS, PDSO54 | on request |
| MT48LC4M32B2P-7:L | Micron | Synchronous DRAM, 4MX32, 5.5ns, CMOS, PDSO86 | on request |
| MT48LC8M16A2TG-75IT:G | Micron | Synchronous DRAM, 8MX16, 5.4ns, CMOS, PDSO54 | on request |
| MT4HTF6464HY-667E1 | Micron | DDR DRAM Module, 64MX64, 0.45ns, CMOS, PDMA200 | on request |
| MT4LC16M4H9TG-5S | Micron | EDO DRAM, 16MX4, 50ns, CMOS, PDSO32 | on request |
| MT4LSDT464HG-10EC3 | Micron | Synchronous DRAM Module, 4MX64, 6ns, CMOS | on request |
| MT8HTF12864HDY-667G1 | Micron | DDR DRAM Module, 128MX64, 0.45ns, CMOS, PDMA200 | on request |
| TC5116400J-60 | Toshiba | Fast Page DRAM, 4MX4, 60ns, CMOS, PDSO24 | on request |
| TC514256AZ-70 | Toshiba | Fast Page DRAM, 256KX4, 70ns, CMOS, PZIP19 | on request |
| TC514256AZL-80 | Toshiba | Fast Page DRAM, 256KX4, 80ns, CMOS, PZIP19 | on request |
| TC514400ASJ-70 | Toshiba | Fast Page DRAM, 1MX4, 70ns, CMOS, PDSO20 | on request |
| TMS55160-60DGH | TI | Video DRAM, 256KX16, 60ns, CMOS, PDSO64 | on request |
| TMS626402DGE-10 | TI | Synchronous DRAM, 4MX4, 9ns, CMOS, PDSO44 | on request |
| TS16MSS64V6G | Transcend Info | Synchronous DRAM Module, 16MX64, 5.4ns, CMOS, PDMA144 | on request |
| UPD41256C-10 | Renesas | Page Mode DRAM, 256KX1, 100ns, MOS, PDIP16 | on request |
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