BAUTEIL:
MJD112T4G Power Bipolar Transistors
Onsemi
ComSIT hat 2,950 Stück MJD112T4G von Onsemi auf Lager. Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin. Lebenszyklus: Active / Mature. RoHS-konform. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von Onsemi · Alle Power Bipolar Transistors
| STOCK | 2950 |
| PARTNUMBER | MJD112T4G |
| MANUFACTURER | Onsemi (ONSEMI) |
| TYPE | Transistors |
| CATEGORY | Power Bipolar Transistors (Semiconductors > Transistors > Power Bipolar Transistors) |
| MFR. DESC | NPN DARLINGTON POWER TRANSISTOR |
| DESCRIPTION | Power Bipolar Transistor, 2A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin |
| MFR. PKG. DESC. | DPAK-3 |
| LC CODE | 3.00 |
| CAGE CODE | 1MQ07, 5V1P1, 59PE1 |
| ALERT DATE | 23-Aug-2021 |
| PART STATUS | Active |
| LIFECYCLESTAGE | Mature |
| STOCK | 2950 |
