BAUTEIL:
STGB30M65DF2 Insulated Gate Bipolar Transistors
ST Micro (STMICROELECTRONICS)
STGB30M65DF2 von ST Micro (STMICROELECTRONICS) ist bei ComSIT auf Anfrage erhältlich. Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-263AB. Lebenszyklus: Active / Mature. RoHS-konform. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von ST Micro · Alle Insulated Gate Bipolar Transistors
| PARTNUMBER | STGB30M65DF2 |
| MANUFACTURER | ST Micro (STMICROELECTRONICS) |
| TYPE | Transistors |
| CATEGORY | Insulated Gate Bipolar Transistors (Semiconductors > Transistors > Insulated Gate Bipolar Transistors) |
| MFR. DESC | TRENCH GATE FIELD-STOP IGBT, M SERIES 650 V, 30 A LOW LOSS |
| DESCRIPTION | Insulated Gate Bipolar Transistor, 60A I(C), 650V V(BR)CES, N-Channel, TO-263AB |
| MFR. PKG. DESC. | TO-263, D2PAK-3/2 |
| LC CODE | 3.00 |
| CAGE CODE | F8859, 50088, SCR76, 66958 |
| ALERT DATE | 30-Aug-2021 |
| PART STATUS | Active |
| LIFECYCLESTAGE | Mature |
