BAUTEIL:
FGB5N60UNDF Insulated Gate Bipolar Transistors
Onsemi
ComSIT hat 800 Stück FGB5N60UNDF von Onsemi auf Lager. Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-263AB. Lebenszyklus: Discontinued / Discontinued. RoHS-konform. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von Onsemi · Alle Insulated Gate Bipolar Transistors
| STOCK | 800 |
| PARTNUMBER | FGB5N60UNDF |
| MANUFACTURER | Onsemi (ONSEMI) |
| TYPE | Transistors |
| CATEGORY | Insulated Gate Bipolar Transistors (Semiconductors > Transistors > Insulated Gate Bipolar Transistors) |
| MFR. DESC | 600 V, 5 A SHORT CIRCUIT RATED IGBT |
| DESCRIPTION | Insulated Gate Bipolar Transistor, 10A I(C), 600V V(BR)CES, N-Channel, TO-263AB |
| MFR. PKG. DESC. | D2PAK-3/2 |
| LC CODE | 5.00 |
| CAGE CODE | 1MQ07, 5V1P1, 59PE1 |
| ALERT DATE | 29-Jan-2021 |
| PART STATUS | Discontinued |
| LIFECYCLESTAGE | Discontinued |
| STOCK | 800 |
