BAUTEIL:
MG25Q6ES50A Insulated Gate Bipolar Transistors
Toshiba (TOSHIBA CORP)
ComSIT hat 40 Stück MG25Q6ES50A von Toshiba (TOSHIBA CORP) auf Lager. Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel. Lebenszyklus: Discontinued / Discontinued. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von Toshiba · Alle Insulated Gate Bipolar Transistors
| STOCK | 40 |
| PARTNUMBER | MG25Q6ES50A |
| MANUFACTURER | Toshiba (TOSHIBA CORP) |
| TYPE | Transistors |
| CATEGORY | Insulated Gate Bipolar Transistors (Semiconductors > Transistors > Insulated Gate Bipolar Transistors) |
| MFR. DESC | SILICON N CHANNEL IGBT GTR MODULE |
| DESCRIPTION | Insulated Gate Bipolar Transistor, 35A I(C), 1200V V(BR)CES, N-Channel |
| MFR. PKG. DESC. | 2-108E2A, 17 PIN |
| LC CODE | 5.00 |
| CAGE CODE | 61802 |
| PART STATUS | Discontinued |
| LIFECYCLESTAGE | Discontinued |
| STOCK | 40 |
