RÉFÉRENCE :
FQD3N60CTM-WS / FQD3N60CTMWS Power Field-Effect Transistors
Onsemi
ComSIT a 3,780 pièces de FQD3N60CTM-WS de Onsemi en stock. Power Field-Effect Transistor, 2.4A I(D), 600V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA. Cycle de vie : Discontinued / Discontinued. Conforme RoHS. Composants d’origine certifiés, meilleur prix, livraison rapide dans le monde entier. Demandez un devis
Tous les composants Onsemi · Tous : Power Field-Effect Transistors
| STOCK | 3780 |
| PARTNUMBER | FQD3N60CTM-WS |
| MANUFACTURER | Onsemi (ONSEMI) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | N-CHANNEL QFET MOSFET |
| DESCRIPTION | Power Field-Effect Transistor, 2.4A I(D), 600V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
| MFR. PKG. DESC. | PLASTIC, DPAK-3/2 |
| LC CODE | 5.00 |
| CAGE CODE | 1MQ07, 5V1P1, 59PE1 |
| ALERT DATE | 30-Jun-2022 |
| PART STATUS | Discontinued |
| LIFECYCLESTAGE | Discontinued |
| STOCK | 3780 |
