RÉFÉRENCE :
SQD50N05-11L_GE3 / SQD50N0511LGE3 Power Field-Effect Transistors
Vishay (VISHAY INTERTECHNOLOGY INC)
SQD50N05-11L_GE3 de Vishay (VISHAY INTERTECHNOLOGY INC) est disponible chez ComSIT sur demande. Power Field-Effect Transistor, 50A I(D), 50V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252. Cycle de vie : NRFND / Decline. Conforme RoHS. Composants d’origine certifiés, meilleur prix, livraison rapide dans le monde entier. Demandez un devis
Tous les composants Vishay · Tous : Power Field-Effect Transistors
| PARTNUMBER | SQD50N05-11L_GE3 |
| MANUFACTURER | Vishay (VISHAY INTERTECHNOLOGY INC) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | AUTOMOTIVE N-CHANNEL 50 V (D-S) 175 DEGREE CELSIUS MOSFET |
| DESCRIPTION | Power Field-Effect Transistor, 50A I(D), 50V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 |
| MFR. PKG. DESC. | HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 |
| LC CODE | 4.00 |
| CAGE CODE | 18612, 0LCA7, K4184, C2817, 09969 |
| ALERT DATE | 24-Nov-2021 |
| PART STATUS | NRFND |
| LIFECYCLESTAGE | Decline |
