ARTICOLO:
STB100N6F7 Power Field-Effect Transistors
ST Micro (STMICROELECTRONICS)
ComSIT ha 1,900 pezzi di STB100N6F7 di ST Micro (STMICROELECTRONICS) a magazzino. Power Field-Effect Transistor, 100A I(D), 60V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB. Ciclo di vita: Active / Mature. Conforme RoHS. Componenti originali e certificati, miglior prezzo, consegna rapida in tutto il mondo. Richiedi un’offerta
Tutti i componenti ST Micro · Tutti: Power Field-Effect Transistors
| STOCK | 1900 |
| PARTNUMBER | STB100N6F7 |
| MANUFACTURER | ST Micro (STMICROELECTRONICS) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | N-CHANNEL 60 V, 4.7 MILLI OHM TYP.,100 A STRIPFET F7 POWER MOSFET IN A D2PAK PACKAGE |
| DESCRIPTION | Power Field-Effect Transistor, 100A I(D), 60V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
| MFR. PKG. DESC. | TO-263, D2PAK-3/2 |
| LC CODE | 3.00 |
| CAGE CODE | F8859, 50088, SCR76, 66958 |
| ALERT DATE | 13-Dec-2022 |
| PART STATUS | Active |
| LIFECYCLESTAGE | Mature |
| STOCK | 1900 |
