ARTICOLO:
FQD2N80 Power Field-Effect Transistors
Fairchild Semi (FAIRCHILD SEMICONDUCTOR CORP)
FQD2N80 di Fairchild Semi (FAIRCHILD SEMICONDUCTOR CORP) è disponibile presso ComSIT su richiesta. Power Field-Effect Transistor, 1.8A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252. Ciclo di vita: Discontinued / Discontinued. Componenti originali e certificati, miglior prezzo, consegna rapida in tutto il mondo. Richiedi un’offerta
Tutti i componenti Fairchild Semi · Tutti: Power Field-Effect Transistors
| PARTNUMBER | FQD2N80 |
| MANUFACTURER | Fairchild Semi (FAIRCHILD SEMICONDUCTOR CORP) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | 800 V N-CHANNEL MOSFET |
| DESCRIPTION | Power Field-Effect Transistor, 1.8A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 |
| MFR. PKG. DESC. | DPAK-3 |
| LC CODE | 5.00 |
| CAGE CODE | 1HBD3, 07933, 59621, 7D893, 07263 |
| PART STATUS | Discontinued |
| LIFECYCLESTAGE | Discontinued |
