ARTICOLO:
FQB55N10TM Power Field-Effect Transistors
Onsemi
ComSIT ha 365 pezzi di FQB55N10TM di Onsemi a magazzino. Power Field-Effect Transistor, 55A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB. Ciclo di vita: Active / Mature. Conforme RoHS. Componenti originali e certificati, miglior prezzo, consegna rapida in tutto il mondo. Richiedi un’offerta
Tutti i componenti Onsemi · Tutti: Power Field-Effect Transistors
| STOCK | 365 |
| PARTNUMBER | FQB55N10TM |
| MANUFACTURER | Onsemi (ONSEMI) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | 100 V N-CHANNEL MOSFET |
| DESCRIPTION | Power Field-Effect Transistor, 55A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
| MFR. PKG. DESC. | D2PAK-3 |
| LC CODE | 3.00 |
| CAGE CODE | 1MQ07, 59PE1, 9CDY7, 9KJZ2 |
| ALERT DATE | 26-Mar-2025 |
| PART STATUS | Active |
| LIFECYCLESTAGE | Mature |
| STOCK | 365 |
