ARTICOLO:
PHD6N10E Power Field-Effect Transistors
NXP (NXP SEMICONDUCTORS)
ComSIT ha 7,500 pezzi di PHD6N10E di NXP (NXP SEMICONDUCTORS) a magazzino. Power Field-Effect Transistor, 6.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET. Ciclo di vita: Discontinued / Discontinued. Componenti originali e certificati, miglior prezzo, consegna rapida in tutto il mondo. Richiedi un’offerta
Tutti i componenti NXP · Tutti: Power Field-Effect Transistors
| STOCK | 7500 |
| PARTNUMBER | PHD6N10E |
| MANUFACTURER | NXP (NXP SEMICONDUCTORS) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | POWERMOS TRANSISTOR |
| DESCRIPTION | Power Field-Effect Transistor, 6.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| MFR. PKG. DESC. | PLASTIC PACKAGE-3 |
| LC CODE | 5.00 |
| CAGE CODE | H1R01, H0H68, H1V34 |
| PART STATUS | Discontinued |
| LIFECYCLESTAGE | Discontinued |
| STOCK | 7500 |
