ARTICOLO:
AIMZH120R010M1T Power Field-Effect Transistors
Infineon (INFINEON TECHNOLOGIES AG)
ComSIT ha 123 pezzi di AIMZH120R010M1T di Infineon (INFINEON TECHNOLOGIES AG) a magazzino. Power Field-Effect Transistor, 202A I(D), 1200V, 0.0113ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247. Ciclo di vita: Active / Mature. Componenti originali e certificati, miglior prezzo, consegna rapida in tutto il mondo. Richiedi un’offerta
Tutti i componenti Infineon · Tutti: Power Field-Effect Transistors
| STOCK | 123 |
| PARTNUMBER | AIMZH120R010M1T |
| MANUFACTURER | Infineon (INFINEON TECHNOLOGIES AG) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | CoolSiC 1200 V SiC Trench MOSFET |
| DESCRIPTION | Power Field-Effect Transistor, 202A I(D), 1200V, 0.0113ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247 |
| LC CODE | 3.00 |
| CAGE CODE | C6489, 4KYR2 |
| ALERT DATE | 26-Mar-2025 |
| PART STATUS | Active |
| LIFECYCLESTAGE | Mature |
| STOCK | 123 |
