ARTICOLO:
IRFR220 Power Field-Effect Transistors
NXP (NXP SEMICONDUCTORS)
IRFR220 di NXP (NXP SEMICONDUCTORS) è disponibile presso ComSIT su richiesta. Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252. Ciclo di vita: Discontinued / Discontinued. Conforme RoHS. Componenti originali e certificati, miglior prezzo, consegna rapida in tutto il mondo. Richiedi un’offerta
Tutti i componenti NXP · Tutti: Power Field-Effect Transistors
| PARTNUMBER | IRFR220 |
| MANUFACTURER | NXP (NXP SEMICONDUCTORS) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| DESCRIPTION | Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 |
| MFR. PKG. DESC. | PLASTIC, SC-63, 3 PIN |
| LC CODE | 5.00 |
| CAGE CODE | H1R01, H0H68, H1V34 |
| ALERT DATE | 31-Dec-2006 |
| PART STATUS | Discontinued |
| LIFECYCLESTAGE | Discontinued |
