ARTICOLO:
FDMQ8203 Power Field-Effect Transistors
Onsemi
FDMQ8203 di Onsemi è disponibile presso ComSIT su richiesta. Power Field-Effect Transistor, 3.4A I(D), 100V, 0.11ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET. Ciclo di vita: Active / Mature. Conforme RoHS. Componenti originali e certificati, miglior prezzo, consegna rapida in tutto il mondo. Richiedi un’offerta
Tutti i componenti Onsemi · Tutti: Power Field-Effect Transistors
| PARTNUMBER | FDMQ8203 |
| MANUFACTURER | Onsemi (ONSEMI) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | N-CHANNEL: 100 V, 6 A, 110 MILLI OHM P-CHANNEL: -80 V, -6 A, 190 MILLI OHM DUAL CHANNEL POWERTRENCH MOSFET |
| DESCRIPTION | Power Field-Effect Transistor, 3.4A I(D), 100V, 0.11ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET |
| MFR. PKG. DESC. | 5 X 4.50 MM, ROHS COMPLIANT, MLP, 12 PIN |
| LC CODE | 3.00 |
| CAGE CODE | 1MQ07, 5V1P1, 59PE1 |
| ALERT DATE | 05-Nov-2021 |
| PART STATUS | Active |
| LIFECYCLESTAGE | Mature |
