ARTICOLO:
PHN210T Power Field-Effect Transistors
Nexperia
PHN210T di Nexperia è disponibile presso ComSIT su richiesta. Power Field-Effect Transistor, 3.4A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA. Ciclo di vita: Discontinued / Discontinued. Conforme RoHS. Componenti originali e certificati, miglior prezzo, consegna rapida in tutto il mondo. Richiedi un’offerta
Tutti i componenti Nexperia · Tutti: Power Field-Effect Transistors
| PARTNUMBER | PHN210T |
| MANUFACTURER | Nexperia (NEXPERIA) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | DUAL N-CHANNEL ENHANCEMENT MODE TRENCHMOS TRANSISTOR |
| DESCRIPTION | Power Field-Effect Transistor, 3.4A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA |
| MFR. PKG. DESC. | SOP-8 |
| LC CODE | 5.00 |
| CAGE CODE | H2HX9 |
| ALERT DATE | 12-Jul-2018 |
| PART STATUS | Discontinued |
| LIFECYCLESTAGE | Discontinued |
