ARTICOLO:
RFD3055LESM9A Power Field-Effect Transistors
Onsemi
RFD3055LESM9A di Onsemi è disponibile presso ComSIT su richiesta. Power Field-Effect Transistor, 11A I(D), 60V, 0.107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA. Ciclo di vita: Active / Mature. Conforme RoHS. Componenti originali e certificati, miglior prezzo, consegna rapida in tutto il mondo. Richiedi un’offerta
Tutti i componenti Onsemi · Tutti: Power Field-Effect Transistors
| PARTNUMBER | RFD3055LESM9A |
| MANUFACTURER | Onsemi (ONSEMI) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | N-CHANNEL LOGIC LEVEL POWER MOSFET |
| DESCRIPTION | Power Field-Effect Transistor, 11A I(D), 60V, 0.107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
| MFR. PKG. DESC. | TO-252 VARIANT, 3 PIN |
| LC CODE | 3.00 |
| CAGE CODE | 1MQ07, 5V1P1, 59PE1 |
| ALERT DATE | 05-Nov-2021 |
| PART STATUS | Active |
| LIFECYCLESTAGE | Mature |
