ARTICOLO:
BTS3160D Power Field-Effect Transistors
Infineon (INFINEON TECHNOLOGIES AG)
BTS3160D di Infineon (INFINEON TECHNOLOGIES AG) è disponibile presso ComSIT su richiesta. Power Field-Effect Transistor, 7.8A I(D), 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA. Ciclo di vita: Active / Mature. Componenti originali e certificati, miglior prezzo, consegna rapida in tutto il mondo. Richiedi un’offerta
Tutti i componenti Infineon · Tutti: Power Field-Effect Transistors
| PARTNUMBER | BTS3160D |
| MANUFACTURER | Infineon (INFINEON TECHNOLOGIES AG) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | SMART LOW-SIDE POWER SWITCH |
| DESCRIPTION | Power Field-Effect Transistor, 7.8A I(D), 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
| MFR. PKG. DESC. | TO-252, 5 PIN |
| LC CODE | 3.00 |
| CAGE CODE | C6489, 4KYR2 |
| ALERT DATE | 05-Nov-2021 |
| PART STATUS | Active |
| LIFECYCLESTAGE | Mature |
