ARTICOLO:
SPB80N06S2L-11 / SPB80N06S2L11 Power Field-Effect Transistors
Infineon (INFINEON TECHNOLOGIES AG)
SPB80N06S2L-11 di Infineon (INFINEON TECHNOLOGIES AG) è disponibile presso ComSIT su richiesta. Power Field-Effect Transistor, 80A I(D), 55V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB. Ciclo di vita: Discontinued / Discontinued. Componenti originali e certificati, miglior prezzo, consegna rapida in tutto il mondo. Richiedi un’offerta
Tutti i componenti Infineon · Tutti: Power Field-Effect Transistors
| PARTNUMBER | SPB80N06S2L-11 |
| MANUFACTURER | Infineon (INFINEON TECHNOLOGIES AG) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | OPTIMOS POWER-TRANSISTOR |
| DESCRIPTION | Power Field-Effect Transistor, 80A I(D), 55V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
| MFR. PKG. DESC. | PLASTIC, TO-263, 3 PIN |
| LC CODE | 5.00 |
| CAGE CODE | C6489, 4KYR2 |
| ALERT DATE | 05-Jun-2008 |
| PART STATUS | Discontinued |
| LIFECYCLESTAGE | Discontinued |
