ARTICOLO:
TK12E60W / TK12E60WS1VXS Power Field-Effect Transistors
Toshiba (TOSHIBA CORP)
TK12E60W di Toshiba (TOSHIBA CORP) è disponibile presso ComSIT su richiesta. Power Field-Effect Transistor, 11.5A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB. Ciclo di vita: Active / Mature. Conforme RoHS. Componenti originali e certificati, miglior prezzo, consegna rapida in tutto il mondo. Richiedi un’offerta
Tutti i componenti Toshiba · Tutti: Power Field-Effect Transistors
| PARTNUMBER | TK12E60W |
| MANUFACTURER | Toshiba (TOSHIBA CORP) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | MOSFET SILICON N-CHANNEL MOS (DTMOSIV) |
| DESCRIPTION | Power Field-Effect Transistor, 11.5A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
| MFR. PKG. DESC. | TO-220, 3 PIN |
| LC CODE | 3.00 |
| CAGE CODE | 61802 |
| ALERT DATE | 13-Dec-2022 |
| PART STATUS | Active |
| LIFECYCLESTAGE | Mature |