ARTICOLO:
IPB038N12N3G Power Field-Effect Transistors
Infineon (INFINEON TECHNOLOGIES AG)
ComSIT ha 1,017 pezzi di IPB038N12N3G di Infineon (INFINEON TECHNOLOGIES AG) a magazzino. Power Field-Effect Transistor, 120A I(D), 120V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB. Ciclo di vita: Active / Mature. Conforme RoHS. Componenti originali e certificati, miglior prezzo, consegna rapida in tutto il mondo. Richiedi un’offerta
Tutti i componenti Infineon · Tutti: Power Field-Effect Transistors
| STOCK | 1017 |
| PARTNUMBER | IPB038N12N3G |
| MANUFACTURER | Infineon (INFINEON TECHNOLOGIES AG) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | OPTIMOS 3 POWER-TRANSISTOR |
| DESCRIPTION | Power Field-Effect Transistor, 120A I(D), 120V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
| MFR. PKG. DESC. | GREEN, PLASTIC, TO-263, D2PAK-3 |
| LC CODE | 3.00 |
| CAGE CODE | C6489, 4KYR2 |
| ALERT DATE | 13-Dec-2022 |
| PART STATUS | Active |
| LIFECYCLESTAGE | Mature |
| STOCK | 1017 |
