ARTICOLO:
FDN5618P Power Field-Effect Transistors
Onsemi
FDN5618P di Onsemi è disponibile presso ComSIT su richiesta. Power Field-Effect Transistor, 1.25A I(D), 60V, 0.17ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET. Ciclo di vita: Active / Mature. Conforme RoHS. Componenti originali e certificati, miglior prezzo, consegna rapida in tutto il mondo. Richiedi un’offerta
Tutti i componenti Onsemi · Tutti: Power Field-Effect Transistors
| PARTNUMBER | FDN5618P |
| MANUFACTURER | Onsemi (ONSEMI) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | 60 V P-CHANNEL LOGIC LEVEL POWERTRENCH MOSFET |
| DESCRIPTION | Power Field-Effect Transistor, 1.25A I(D), 60V, 0.17ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
| MFR. PKG. DESC. | SUPERSOT-3 |
| LC CODE | 3.00 |
| CAGE CODE | 1MQ07, 5V1P1, 59PE1 |
| ALERT DATE | 05-Nov-2021 |
| PART STATUS | Active |
| LIFECYCLESTAGE | Mature |
