ARTICOLO:
IRFIZ24N Power Field-Effect Transistors
Infineon (INFINEON TECHNOLOGIES AG)
ComSIT ha 8,000 pezzi di IRFIZ24N di Infineon (INFINEON TECHNOLOGIES AG) a magazzino. Power Field-Effect Transistor, 14A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB. Ciclo di vita: NRFND / Decline. Componenti originali e certificati, miglior prezzo, consegna rapida in tutto il mondo. Richiedi un’offerta
Tutti i componenti Infineon · Tutti: Power Field-Effect Transistors
| STOCK | 8000 |
| PARTNUMBER | IRFIZ24N |
| MANUFACTURER | Infineon (INFINEON TECHNOLOGIES AG) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | HEXFET POWER MOSFET |
| DESCRIPTION | Power Field-Effect Transistor, 14A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
| MFR. PKG. DESC. | TO-220, FULLPAK-3 |
| LC CODE | 4.00 |
| CAGE CODE | C6489, 4KYR2 |
| ALERT DATE | 30-Jun-2023 |
| PART STATUS | NRFND |
| LIFECYCLESTAGE | Decline |
| STOCK | 8000 |
