料号:
STB23NM60ND Power Field-Effect Transistors
ST Micro (STMICROELECTRONICS)
ComSIT 现有 ST Micro (STMICROELECTRONICS) 的 STB23NM60ND 1,660 件库存。 Power Field-Effect Transistor, 19.5A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB. 生命周期:Discontinued / Discontinued。 符合 RoHS。 原装认证元器件,最优价格,全球快速交付。 欢迎询价
ST Micro 全部元器件 · 全部 Power Field-Effect Transistors
| 库存 | 1660 |
| PARTNUMBER | STB23NM60ND |
| MANUFACTURER | ST Micro (STMICROELECTRONICS) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | 600 V, 19.5 A, 0.150 OHM, D2PAK, FDMESH II (WITH FAST DIODE) N-CHANNEL POWER MOSFET |
| DESCRIPTION | Power Field-Effect Transistor, 19.5A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
| MFR. PKG. DESC. | ROHS COMPLIANT, TO-263, D2PAK-3 |
| LC CODE | 5.00 |
| CAGE CODE | F8859, 50088, SCR76, 66958 |
| ALERT DATE | 17-Oct-2018 |
| PART STATUS | Discontinued |
| LIFECYCLESTAGE | Discontinued |
| 库存 | 1660 |