料号：
ISP12DP06NM Power Field-Effect Transistors
Infineon (INFINEON TECHNOLOGIES AG)
ComSIT 现有 Infineon (INFINEON TECHNOLOGIES AG) 的 ISP12DP06NM 705 件库存。 Power Field-Effect Transistor, 2.8A I(D), 60V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET. 生命周期：Active / Mature。 符合 RoHS。 原装认证元器件，最优价格，全球快速交付。 欢迎询价
Infineon 全部元器件 · 全部 Power Field-Effect Transistors
| 库存 | 705 |
| PARTNUMBER | ISP12DP06NM |
| MANUFACTURER | Infineon (INFINEON TECHNOLOGIES AG) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | MOSFET |
| DESCRIPTION | Power Field-Effect Transistor, 2.8A I(D), 60V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET |
| MFR. PKG. DESC. | SOT-223, 4 PIN |
| LC CODE | 3.00 |
| CAGE CODE | C6489, 4KYR2 |
| ALERT DATE | 26-Mar-2025 |
| PART STATUS | Active |
| LIFECYCLESTAGE | Mature |
| 库存 | 705 |
