料号：
IPB60R190C6 Power Field-Effect Transistors
Infineon (INFINEON TECHNOLOGIES AG)
ComSIT 现有 Infineon (INFINEON TECHNOLOGIES AG) 的 IPB60R190C6 1,000 件库存。 Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB. 生命周期：NRFND / Decline。 符合 RoHS。 原装认证元器件，最优价格，全球快速交付。 欢迎询价
Infineon 全部元器件 · 全部 Power Field-Effect Transistors
| 库存 | 1000 |
| PARTNUMBER | IPB60R190C6 |
| MANUFACTURER | Infineon (INFINEON TECHNOLOGIES AG) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | 600 V COOLMOS C6 POWER MOSFET |
| DESCRIPTION | Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
| MFR. PKG. DESC. | TO-263, 3 PIN |
| LC CODE | 4.00 |
| CAGE CODE | C6489, 4KYR2 |
| ALERT DATE | 24-Dec-2025 |
| PART STATUS | NRFND |
| LIFECYCLESTAGE | Decline |
| 库存 | 1000 |
