BAUTEIL:
SQM120N10-3M8_GE3 / SQM120N103M8GE3 Power Field-Effect Transistors
Vishay (VISHAY INTERTECHNOLOGY INC)
SQM120N10-3M8_GE3 von Vishay (VISHAY INTERTECHNOLOGY INC) ist bei ComSIT auf Anfrage erhältlich. Power Field-Effect Transistor, 120A I(D), 100V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB. Lebenszyklus: Active / Mature. RoHS-konform. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von Vishay · Alle Power Field-Effect Transistors
| PARTNUMBER | SQM120N10-3M8_GE3 |
| MANUFACTURER | Vishay (VISHAY INTERTECHNOLOGY INC) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | AUTOMOTIVE N-CHANNEL 100 V (D-S) 175 DEGREE CELSIUS MOSFET |
| DESCRIPTION | Power Field-Effect Transistor, 120A I(D), 100V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
| MFR. PKG. DESC. | TO-263, D2PAK-3/2 |
| LC CODE | 3.00 |
| CAGE CODE | 18612, 0LCA7, K4184, C2817, 09969 |
| ALERT DATE | 13-Dec-2022 |
| PART STATUS | Active |
| LIFECYCLESTAGE | Mature |
