Power Field-Effect Transistors Elektronische Bauteile ab Lager
ComSIT führt 3,798 Teilenummern der Kategorie power field-effect transistors (3,316 ab Lager verfügbar) von 57 Herstellern. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Klicken Sie auf eine Teilenummer für alle Spezifikationen, den Lebenszyklusstatus und eine Angebotsanfrage.
Classification: Semiconductors > Transistors > Power Field-Effect Transistors
Power Field-Effect Transistors nach Hersteller
- Infineon (1,003)
- Vishay (729)
- ST Micro (576)
- Onsemi (342)
- IR (302)
- Fairchild Semi (137)
- Toshiba (105)
- Alpha Omega (78)
- Nexperia (67)
- Siliconix (64)
- Diodes (61)
- NXP (56)
- Renesas (52)
- Harris (23)
- Siemens (21)
- Magnachip (20)
- Rohm (17)
- Kec Corp (16)
- IXYS (15)
- Taiwan Semi (15)
- TI (12)
- Littelfuse (11)
- IR-HiRel (9)
- General Semi (8)
- Intersil (7)
- Motorola (6)
- National (5)
- Philips Semi (5)
- Renesas Tech (5)
- Samsung (5)
- Semikron (5)
- Fuji Elec (4)
- Microchip (4)
- Supertex (4)
- Shindengen (3)
- Wolfspeed (3)
- Zetex (3)
- Cissoid (2)
- Microsemi (2)
- NJ Semi (2)
- Sansha Electric (2)
- Telefunken Mic (2)
- Thomson Elec (2)
- USCI (2)
- Advanced power (1)
- Analog Power (1)
- Efficient Corp (1)
- Fortune (1)
- Freescale (1)
- Hitachi (1)
- NA Philips (1)
- Navitas (1)
- Panjit (1)
- Sanyo Semi (1)
- Torex (1)
- TT Electronics (1)
- Vishay Semi (1)
| Teilenummer | Hersteller | Beschreibung | Bestand |
|---|---|---|---|
| STL220N6F7 | ST Micro | Power Field-Effect Transistor, 120A I(D), 60V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,008,000 |
| FDWS86368-F085H | Onsemi | Power Field-Effect Transistor, 80A I(D), 80V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 402,000 |
| AM30N06-39D | Analog Power | Power Field-Effect Transistor, 30A I(D), 60V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 357,524 |
| STD6N52K3 | ST Micro | Power Field-Effect Transistor, 5A I(D), 525V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 340,000 |
| BSP318SE6327 | Infineon | Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 325,246 |
| SCT070H120G3AG | ST Micro | Power Field-Effect Transistor | 308,998 |
| STN4NF03L | ST Micro | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 280,000 |
| FDMS9410-F085 | Onsemi | Power Field-Effect Transistor | 207,000 |
| SUD35N05-26L-E3 | Vishay | Power Field-Effect Transistor, 35A I(D), 55V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 150,000 |
| RF1S30N06LESM9A | Fairchild Semi | Power Field-Effect Transistor, 30A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 149,972 |
| BUZ12 | Siemens | Power Field-Effect Transistor, 42A I(D), 50V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 130,956 |
| BUK9540-100A | Philips Semi | Power Field-Effect Transistor, 37A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 119,695 |
| AUIRLU3114Z | Infineon | Power Field-Effect Transistor, 42A I(D), 40V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 108,188 |
| NVMFS5C460NLWFT3G | Onsemi | Power Field-Effect Transistor, 78A I(D), 40V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 100,000 |
| RFP30N06LE | Fairchild Semi | Power Field-Effect Transistor, 30A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 96,294 |
| AUIRLR2905ZTRL | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 96,000 |
| DMN2058U-13 | Diodes | Power Field-Effect Transistor, 4.6A I(D), 20V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 94,945 |
| BTS110 | Infineon | Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 91,194 |
| AON2420 | Alpha Omega | Power Field-Effect Transistor, 8A I(D), 30V, 0.0117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 81,000 |
| AUIRFN8458TR | IR | Power Field-Effect Transistor | 80,000 |
| RLD03N06CLESM9A | Fairchild Semi | Power Field-Effect Transistor, 60V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 66,900 |
| DMP3160L-7 | Diodes | Power Field-Effect Transistor, 2.7A I(D), 20V, 0.122ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 66,000 |
| MCH3421-TL-E | Onsemi | Power Field-Effect Transistor, 0.8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 63,000 |
| DMN6040SFDE-7 | Diodes | Power Field-Effect Transistor, 5.3A I(D), 60V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 61,500 |
| 2SK945 | Toshiba | Power Field-Effect Transistor, 1A I(D), 400V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 59,500 |
| BUK9675-55 | NXP | Power Field-Effect Transistor, 19.7A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 57,390 |
| SQ2389ES-T1_GE3 | Vishay | Power Field-Effect Transistor | 56,975 |
| RFD8P05SM9A | Harris | Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 56,015 |
| IPD90N04S4-02 | Infineon | Power Field-Effect Transistor, 90A I(D), 40V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 55,000 |
| MTD3055VLT4 | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 54,710 |
| IRLR024TRPBF | Vishay | Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 53,970 |
| SQJ968EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 18A I(D), 60V, 0.0336ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 53,895 |
| SI7315DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 8.9A I(D), 150V, 0.315ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 51,000 |
| NVD4810NT4G-VF01 | Onsemi | Power Field-Effect Transistor, 9A I(D), 30V, 0.0157ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 50,000 |
| RFD15P05SM9A | Fairchild Semi | Power Field-Effect Transistor, 15A I(D), 50V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 50,000 |
| 2SK1579DYTR-E | Renesas Tech | Power Field-Effect Transistor, 2A I(D), 12V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 48,000 |
| IPD26N06S2L-35 | Infineon | Power Field-Effect Transistor, 30A I(D), 55V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 47,903 |
| FDD8896 | Onsemi | Power Field-Effect Transistor, 17A I(D), 30V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 47,395 |
| TPIC5201KC | TI | Power Field-Effect Transistor, 7.5A I(D), 60V, 0.125ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 47,387 |
| BTS410E | Siemens | Power Field-Effect Transistor, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 47,300 |
| BUK9635-55 | NXP | Power Field-Effect Transistor, 34A I(D), 55V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 47,200 |
| BUK9107-40ATC | NXP | Power Field-Effect Transistor, 75A I(D), 40V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 46,400 |
| BUZ104S | Infineon | Power Field-Effect Transistor, 13.5A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 46,237 |
| BUK9640-100A,118 | Nexperia | Power Field-Effect Transistor, 39A I(D), 100V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 45,748 |
| SPD07N60S5 | Infineon | Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 45,500 |
| NVD5890NLT4G | Onsemi | Power Field-Effect Transistor, 123A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 45,000 |
| SI3455DV-T1 | Siliconix | Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 45,000 |
| BTS100 | Infineon | Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 44,173 |
| DMP2066LSS-13 | Diodes | Power Field-Effect Transistor, 6.5A I(D), 20V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 42,340 |
| 2SK2741 | Toshiba | Power Field-Effect Transistor, 5A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 42,000 |
| IRLL024NPBF | Infineon | Power Field-Effect Transistor, 3.1A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 39,740 |
| IPP77N06S2-12 | Infineon | Power Field-Effect Transistor, 77A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 39,500 |
| IPI70N04S406AKSA1 | Infineon | Power Field-Effect Transistor, 70A I(D), 40V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 38,550 |
| RFD10P03LSM9A | Harris | Power Field-Effect Transistor, 10A I(D), 30V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 38,230 |
| BUK9230-55A | Nexperia | Power Field-Effect Transistor, 38A I(D), 55V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 37,725 |
| SQ2308ES-T1-GE3 | Vishay | Power Field-Effect Transistor, 2.3A I(D), 60V, 0.155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 | 36,495 |
| DMT5015LFDF-7 | Diodes | Power Field-Effect Transistor, 9.1A I(D), 50V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 36,000 |
| CPH6442-TL-W | Onsemi | Power Field-Effect Transistor, 6A I(D), 60V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 35,400 |
| BUZ10 | Siemens | Power Field-Effect Transistor, 23A I(D), 50V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 35,025 |
| FDS6982AS | Onsemi | Power Field-Effect Transistor, 8.6A I(D), 30V, 0.0135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 35,000 |
| GF4410 | General Semi | Power Field-Effect Transistor, 10A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 34,990 |
| SI4416DY-T1 | Siliconix | Power Field-Effect Transistor, 6.9A I(D), 30V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 34,360 |
| STD3NK60ZT4 | ST Micro | Power Field-Effect Transistor, 2.4A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 33,089 |
| IRF7101TR | IR | Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 33,083 |
| IRLL014TR | Siliconix | Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 32,090 |
| BUK9575-100A | Nexperia | Power Field-Effect Transistor, 23A I(D), 100V, 0.084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 32,001 |
| PHB11N06LT | NXP | Power Field-Effect Transistor, 10.3A I(D), 55V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 32,000 |
| IRF7811WTRPBF | IR | Power Field-Effect Transistor, 14A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 31,794 |
| RFP12N10L | Onsemi | Power Field-Effect Transistor, 12A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 31,785 |
| STD19NE06L-1 | ST Micro | Power Field-Effect Transistor, 19A I(D), 60V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 31,039 |
| BUK9635-55A/T3 | Nexperia | Power Field-Effect Transistor, 34A I(D), 55V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 30,400 |
| IPA50R380CE | Infineon | Power Field-Effect Transistor, 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 29,400 |
| BUZ11 | ST Micro | Power Field-Effect Transistor, 33A I(D), 50V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 28,577 |
| NVMFS6H824NWFT1G | Onsemi | Power Field-Effect Transistor, 103A I(D), 80V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 28,000 |
| PHD3N20E | NXP | Power Field-Effect Transistor, 3.5A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 27,480 |
| BSC093N04LSG | Infineon | Power Field-Effect Transistor, 13A I(D), 40V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 27,420 |
| SI6966EDQ-T1 | Siliconix | Power Field-Effect Transistor, 5.2A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 26,735 |
| STB11NK40ZT4 | ST Micro | Power Field-Effect Transistor, 9A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 26,000 |
| 2SK2865(TE16L1,NQ) | Toshiba | Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 25,837 |
| IRFIZ24NPBF | Infineon | Power Field-Effect Transistor, 14A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 25,388 |
| STP14NK50ZFP | ST Micro | Power Field-Effect Transistor, 14A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 25,200 |
| STB4NK60Z-1 | ST Micro | Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 25,000 |
| AUIRF7759L2TR | IR | Power Field-Effect Transistor, 375A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 24,830 |
| FQU5N60CTU | Onsemi | Power Field-Effect Transistor, 2.8A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 24,821 |
| FQB34P10TM-F085 | Onsemi | Power Field-Effect Transistor, 33.5A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 24,542 |
| BTS244ZE-3062A | Infineon | Power Field-Effect Transistor, 35A I(D), 55V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 24,140 |
| AUIRF1404ZSTRL | Infineon | Power Field-Effect Transistor, 160A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 24,000 |
| IRFR120TRRPBF | Vishay | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 24,000 |
| SI7450DP-T1-E3 | Vishay | Power Field-Effect Transistor, 3.2A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 24,000 |
| SIA437DJ-T1-GE3 | Vishay | Power Field-Effect Transistor, 29.7A I(D), 20V, 0.0145ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 24,000 |
| SIS412DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 8.7A I(D), 30V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 24,000 |
| SQ2315ES-T1_GE3 | Vishay | Power Field-Effect Transistor | 24,000 |
| BTS113AE3045A | Infineon | Power Field-Effect Transistor, 11.5A I(D), 60V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 23,859 |
| STD4NK80ZT4 | ST Micro | Power Field-Effect Transistor, 3A I(D), 800V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 23,465 |
| PMPB85ENEA | NXP | Power Field-Effect Transistor | 23,342 |
| BUK7208-40B | Nexperia | Power Field-Effect Transistor, 75A I(D), 40V, 0.0156ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 22,500 |
| PHN1013 | NXP | Power Field-Effect Transistor, 10A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 22,450 |
| IRFR5305TRPBF | Infineon | Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 22,230 |
| FQP9N90C | Onsemi | Power Field-Effect Transistor, 8A I(D), 900V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 21,050 |
| SI2306BDS-T1-GE3 | Vishay | Power Field-Effect Transistor | 21,000 |
| SI6465DQ-T1 | Siliconix | Power Field-Effect Transistor, 8.8A I(D), 8V, 0.012ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 21,000 |
| BSP124 | NXP | Power Field-Effect Transistor, 0.25A I(D), 250V, 12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 20,915 |
| IPB80N04S4-03 | Infineon | Power Field-Effect Transistor, 80A I(D), 40V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 20,000 |
| IRFBE30SPBF | Vishay | Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 20,000 |
| SPB80N06S2-09 | Infineon | Power Field-Effect Transistor, 80A I(D), 55V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 20,000 |
| FDC608PZ | Onsemi | Power Field-Effect Transistor, 5.8A I(D), 20V, 0.03ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 19,310 |
| IRLI640GPBF | Vishay | Power Field-Effect Transistor, 9.9A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 19,000 |
| FDC642P-F085P | Onsemi | Power Field-Effect Transistor, 4A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 18,629 |
| IPI90N04S4-02 | Infineon | Power Field-Effect Transistor, 90A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 18,250 |
| IRF7707TRPBF | IR | Power Field-Effect Transistor, 7A I(D), 20V, 0.022ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-153AA | 18,165 |
| FQD12N20LTF | Fairchild Semi | Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 18,000 |
| IRFR220TRPBF | Vishay | Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 18,000 |
| SQJ910AEP-T1_GE3 | Vishay | Power Field-Effect Transistor, 30A I(D), 30V, 0.007ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 18,000 |
| STP10NK60ZFP | ST Micro | Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 17,843 |
| NVMFS6H824NT1G | Onsemi | Power Field-Effect Transistor, 103A I(D), 80V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 17,820 |
| BUK7Y28-75B | Nexperia | Power Field-Effect Transistor, 35.5A I(D), 75V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 17,760 |
| GF4412 | General Semi | Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 17,500 |
| STD80N4F6 | ST Micro | Power Field-Effect Transistor, 80A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 17,500 |
| BUZ73A | Infineon | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 17,341 |
| FDY1002PZ | Fairchild Semi | Power Field-Effect Transistor, 0.83A I(D), P-Channel, Metal-oxide Semiconductor FET | 17,200 |
| PMZ270XN | Nexperia | Power Field-Effect Transistor, 2.15A I(D), 20V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 17,104 |
| IRFR3607TRPBF | Infineon | Power Field-Effect Transistor, 56A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 16,805 |
| IRL530NSTRL | IR | Power Field-Effect Transistor, 17A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 16,800 |
| BUZ104 | Infineon | Power Field-Effect Transistor, 17.5A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 16,000 |
| IRF7805TRPBF | Infineon | Power Field-Effect Transistor, 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 16,000 |
| SUD45P03-09-GE3 | Vishay | Power Field-Effect Transistor, 45A I(D), 30V, 0.0087ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 16,000 |
| BUK452-100A | NXP | Power Field-Effect Transistor, 11A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 15,950 |
| EPC2111 | Efficient Corp | Power Field-Effect Transistor, 16A I(D), 30V, 0.019ohm, 2-Element, N-Channel, Gallium Nitride, High Electron Mobility FET | 15,930 |
| SUB75N03-07 | Vishay | Power Field-Effect Transistor, 75A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 15,875 |
| STP40NF12 | ST Micro | Power Field-Effect Transistor, 40A I(D), 120V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 15,489 |
| STD17NF03L-1 | ST Micro | Power Field-Effect Transistor, 17A I(D), 30V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 15,450 |
| BSL211SPH6327 | Infineon | Power Field-Effect Transistor, 4.7A I(D), 20V, 0.067ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 15,000 |
| IPB100N04S4-H2 | Infineon | Power Field-Effect Transistor, 100A I(D), 40V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 15,000 |
| SIA431DJ-T1-GE3 | Vishay | Power Field-Effect Transistor, 12A I(D), -20V, 0.025ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 15,000 |
| STP80NF03L-04 | ST Micro | Power Field-Effect Transistor, 80A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 15,000 |
| BUZ71 | Siemens | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 14,968 |
| NVD5890NT4G-VF01 | Onsemi | Power Field-Effect Transistor | 14,920 |
| STP5NK52ZD | ST Micro | Power Field-Effect Transistor | 14,850 |
| SPP20N60C3 | Infineon | Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 14,815 |
| FDD8647L | Fairchild Semi | Power Field-Effect Transistor, 14A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 14,795 |
| STW80NE06-10 | ST Micro | Power Field-Effect Transistor, 80A I(D), 60V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 14,760 |
| STD17NF03LT4 | ST Micro | Power Field-Effect Transistor, 17A I(D), 30V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 14,625 |
| STD3NK60Z-1 | ST Micro | Power Field-Effect Transistor, 2.4A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 14,625 |
| IRF510PBF | Vishay | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 14,600 |
| BSP315E6327 | Infineon | Power Field-Effect Transistor, 1.1A I(D), 50V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 14,585 |
| DMTH4007LPS-13 | Diodes | Power Field-Effect Transistor, 15.5A I(D), 40V, 0.0098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 14,289 |
| STD2NK90Z-1 | ST Micro | Power Field-Effect Transistor, 2.1A I(D), 900V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 14,237 |
| VNP28N04-E | ST Micro | Power Field-Effect Transistor, 40A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 14,000 |
| XP132A1635SR | Torex | Power Field-Effect Transistor | 14,000 |
| SPD30N03L | Infineon | Power Field-Effect Transistor, 30A I(D), 30V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 13,780 |
| IPD25N06S4L30ATMA2 | Infineon | Power Field-Effect Transistor, 25A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 13,425 |
| IRF7306TRPBF | Infineon | Power Field-Effect Transistor, 3.6A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 13,210 |
| STD6NM60N-1 | ST Micro | Power Field-Effect Transistor, 4.6A I(D), 600V, 0.92ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 13,094 |
| BST82 | Philips Semi | Power Field-Effect Transistor, 0.175A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 13,060 |
| AO4466 | Alpha Omega | Power Field-Effect Transistor, 10A I(D), 30V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 12,885 |
| BUK9640-100A | Nexperia | Power Field-Effect Transistor, 39A I(D), 100V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 12,685 |
| RFD3N08LSM9A | Fairchild Semi | Power Field-Effect Transistor, 3A I(D), 80V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 12,598 |
| BUK7624-55A | Nexperia | Power Field-Effect Transistor, 47A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 12,540 |
| PHD2N50E | NXP | Power Field-Effect Transistor, 2A I(D), 500V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 12,500 |
| AUIRLR3410 | Infineon | Power Field-Effect Transistor, 17A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 12,424 |
| STD4NK50ZT4 | ST Micro | Power Field-Effect Transistor, 3A I(D), 500V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 12,385 |
| MTD3055VL-1 | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 12,295 |
| BF964 | Telefunken Mic | Power Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 12,163 |
| 2N7002BKV | Nexperia | Power Field-Effect Transistor | 12,000 |
| IRF7379TR | IR-HiRel | Power Field-Effect Transistor, 5.8A I(D), 30V, 0.045ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 12,000 |
| IRFR210TRPBF | Vishay | Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 12,000 |
| IRFR220TRLPBF | Vishay | Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 12,000 |
| IRLHM620TRPBF | IR | Power Field-Effect Transistor, 26A I(D), 20V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 12,000 |
| SQ3426AEEV-T1_GE3 | Vishay | Power Field-Effect Transistor | 12,000 |
| SQD10N30-330H_GE3 | Vishay | Power Field-Effect Transistor | 12,000 |
| STF6N65K3 | ST Micro | Power Field-Effect Transistor, 5.4A I(D), 650V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 12,000 |
| STL4P2UH7 | ST Micro | Power Field-Effect Transistor, 4A I(D), 20V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 12,000 |
| BUK7275-100A | NXP | Power Field-Effect Transistor, 21.7A I(D), 100V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 11,810 |
| IRF7416TRPBF | Infineon | Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 11,740 |
| IRLR3802PBF | Infineon | Power Field-Effect Transistor, 30A I(D), 12V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 11,700 |
| PHP18NQ10T | Nexperia | Power Field-Effect Transistor, 18A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 11,650 |
| IRF7205TR | IR | Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 11,645 |
| STY139N65M5 | ST Micro | Power Field-Effect Transistor, 130A I(D), 650V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 11,400 |
| STD2NK90ZT4 | ST Micro | Power Field-Effect Transistor, 2.1A I(D), 900V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 11,344 |
| SPD09P06PLG | Infineon | Power Field-Effect Transistor, 9.7A I(D), 60V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB | 11,288 |
| STD4N52K3 | ST Micro | Power Field-Effect Transistor, 2.5A I(D), 525V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 11,175 |
| STD3NK100Z | ST Micro | Power Field-Effect Transistor, 2.5A I(D), 1000V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 11,151 |
| IRLU3802PBF | Infineon | Power Field-Effect Transistor, 30A I(D), 12V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 11,025 |
| IRF620PBF | Vishay | Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 11,000 |
| RFD14N05L | Onsemi | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 10,950 |
| IRFI730GPBF | Vishay | Power Field-Effect Transistor, 3.7A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 10,900 |
| STP8NM50N | ST Micro | Power Field-Effect Transistor, 5A I(D), 500V, 0.79ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 10,900 |
| BUZ73AL | Infineon | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 10,880 |
| IRFR24N15DPBF | Infineon | Power Field-Effect Transistor, 24A I(D), 150V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 10,725 |
| BUK7614-55A | Nexperia | Power Field-Effect Transistor, 73A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 10,562 |
| SUD08P06-155L-E3 | Vishay | Power Field-Effect Transistor, 8.4A I(D), 60V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 10,558 |
| IRLZ14PBF | Vishay | Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 10,550 |
| STU5N52K3 | ST Micro | Power Field-Effect Transistor, 4.4A I(D), 525V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 10,500 |
| SQ2308CES-T1_GE3 | Vishay | Power Field-Effect Transistor, 2.3A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | 10,409 |
| NP55N055SUG | Renesas | Power Field-Effect Transistor, 55A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 10,290 |
| STD5NK40ZT4 | ST Micro | Power Field-Effect Transistor, 3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 10,245 |
| IRFR024PBF | Vishay | Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 10,125 |
| NDT452AP | Onsemi | Power Field-Effect Transistor, 5A I(D), 30V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 10,014 |
| SSU2N60 | Samsung | Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 10,010 |
| 2SJ278MYTR | Renesas Tech | Power Field-Effect Transistor, 1A I(D), 60V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 10,000 |
| AOD444 | Alpha Omega | Power Field-Effect Transistor, 12A I(D), 60V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 10,000 |
| DMN1008UFDFQ-13 | Diodes | Power Field-Effect Transistor, 12.2A I(D), 12V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 10,000 |
| FQD5N50CTM | Fairchild Semi | Power Field-Effect Transistor, 4A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 10,000 |
| GF9926 | General Semi | Power Field-Effect Transistor, 6A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 10,000 |
| IPB45N06S4L-08 | Infineon | Power Field-Effect Transistor, 45A I(D), 60V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 10,000 |
| IRFR014TRPBF | Vishay | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 10,000 |
| STD10NF30 | ST Micro | Power Field-Effect Transistor, 10A I(D), 300V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 10,000 |
| IPD50N06S4L-08 | Infineon | Power Field-Effect Transistor, 50A I(D), 60V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 9,945 |
| GF4936 | General Semi | Power Field-Effect Transistor, 5.8A I(D), 30V, 0.037ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,920 |
| BSZ034N04LSATMA1 | Infineon | Power Field-Effect Transistor, 19A I(D), 40V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,818 |
| BF2040R-E6814 | Infineon | Power Field-Effect Transistor, 0.04A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 9,715 |
| IRF1312S | IR | Power Field-Effect Transistor, 75A I(D), 80V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,700 |
| BF963 | Telefunken Mic | Power Field-Effect Transistor, 0.05A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 9,684 |
| IPB80N06S2-09 | Infineon | Power Field-Effect Transistor, 80A I(D), 55V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 9,669 |
| SIR800ADP-T1-GE3 | Vishay | Power Field-Effect Transistor, 177A I(D), 20V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,668 |
| IRF7343PBF | Infineon | Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 9,630 |
| IRFL9014TR | Vishay | Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 9,610 |
| BSP149L6327 | Infineon | Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,581 |
| IRFU420PBF | IR | Power Field-Effect Transistor, 2.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 9,525 |
| IRF740 | Siliconix | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 9,490 |
| STP14NK50Z | ST Micro | Power Field-Effect Transistor, 14A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 9,350 |
| 2SK3067 | Toshiba | Power Field-Effect Transistor, 2A I(D), 600V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,340 |
| IPD14N06S2-80 | Infineon | Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 9,335 |
| BSO604NS2 | Infineon | Power Field-Effect Transistor, 5A I(D), 55V, 0.044ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,300 |
| BUK763R1-40B | Nexperia | Power Field-Effect Transistor, 75A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,271 |
| IRFZ24NSTRLPBF | Infineon | Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,140 |
| MTD3055V | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,043 |
| SQS405CENW-T1_GE3 | Vishay | Power Field-Effect Transistor, 16A I(D), 12V, 0.015ohm, 1-Element, P-Channel, Silicon, Trench Mosfet FET | 9,020 |
| AON2406 | Alpha Omega | Power Field-Effect Transistor, 8A I(D), 20V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,000 |
| IRFR310TRLPBF | Vishay | Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 9,000 |
| IRLR3410TRRPBF | Infineon | Power Field-Effect Transistor, 17A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 9,000 |
| SI6415DQ-T1-GE3 | Vishay | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.019ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 9,000 |
| SI7810DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 3.4A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,000 |
| SI7820DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 1.7A I(D), 200V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,000 |
| SIS888DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 20.2A I(D), 150V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,000 |
| SIS990DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 12.1A I(D), 100V, 0.085ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,000 |
| SQ3456BEV-T1_GE3 | Vishay | Power Field-Effect Transistor, 0.0078A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,000 |
| STU11N65M2 | ST Micro | Power Field-Effect Transistor | 9,000 |
| STU6N65M2 | ST Micro | Power Field-Effect Transistor | 9,000 |
| TSM3424CX6RF | Taiwan Semi | Power Field-Effect Transistor, 6.7A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,000 |
| TSM3446CX6RF | Taiwan Semi | Power Field-Effect Transistor, 5.3A I(D), 20V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,000 |
| TSM6968DCARV | Taiwan Semi | Power Field-Effect Transistor, 6.5A I(D), 20V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 9,000 |
| BTS114AE3045A | Siemens | Power Field-Effect Transistor, 17A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 8,995 |
| SFR9024TM | Fairchild Semi | Power Field-Effect Transistor, 7.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 8,995 |
| SI7439DP-T1-GE3 | Vishay | Power Field-Effect Transistor | 8,950 |
| BSO4822 | Infineon | Power Field-Effect Transistor, 12.7A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 8,940 |
| BSC100N03MSG | Infineon | Power Field-Effect Transistor, 12A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 8,920 |
| IRFL210TR | Vishay | Power Field-Effect Transistor, 0.96A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 8,865 |
| STD10PF06T4 | ST Micro | Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 8,845 |
| IRFI840GLCPBF | Vishay | Power Field-Effect Transistor, 4.5A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 8,750 |
| IRLU014PBF | Vishay | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 8,650 |
| IPB80N06S2-08 | Infineon | Power Field-Effect Transistor, 80A I(D), 55V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 8,645 |
| HUF76633P3 | Fairchild Semi | Power Field-Effect Transistor, 39A I(D), 100V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 8,497 |
| IRFR210 | IR | Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 8,450 |
| STP11NK40Z | ST Micro | Power Field-Effect Transistor, 9A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 8,440 |
| STU16N65M2 | ST Micro | Power Field-Effect Transistor | 8,400 |
| IRF7404TR | IR | Power Field-Effect Transistor, 5.4A I(D), 20V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 8,375 |
| 2SK2604 | Toshiba | Power Field-Effect Transistor, 5A I(D), 800V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 8,268 |
| SUM110P06-07L-E3 | Vishay | Power Field-Effect Transistor, 110A I(D), 60V, 0.0069ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 8,240 |
| STD2NK60Z-1 | ST Micro | Power Field-Effect Transistor, 1.5A I(D), 600V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 8,200 |
| SUP75N05-06A | Vishay | Power Field-Effect Transistor, 75A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 8,150 |
| BUZ74 | Infineon | Power Field-Effect Transistor, 2.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 8,100 |
| PJW4N06A-AU_R2_000A1 | Panjit | Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 8,035 |
| IPI80N04S403AKSA1 | Infineon | Power Field-Effect Transistor, 80A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 8,000 |
| IRF7101 | Infineon | Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 8,000 |
| IRFH5006TRPBF | Infineon | Power Field-Effect Transistor, 21A I(D), 60V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 8,000 |
| IRFI530N | Infineon | Power Field-Effect Transistor, 12A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 8,000 |
| IRFIZ24N | Infineon | Power Field-Effect Transistor, 14A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 8,000 |
| IRLHM630TRPBF | Infineon | Power Field-Effect Transistor, 21A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 8,000 |
| STH140N8F7-2 | ST Micro | Power Field-Effect Transistor, 90A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 8,000 |
| STN1NF20 | ST Micro | Power Field-Effect Transistor, 1A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 8,000 |
| BUK482-60A | NXP | Power Field-Effect Transistor, 2.7A I(D), 60V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 7,955 |
| BSZ440N10NS3G | Infineon | Power Field-Effect Transistor, 5.3A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 7,915 |
| SUD35N10-26P-E3 | Vishay | Power Field-Effect Transistor, 12A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 7,900 |
| FQD2N60CTF | Fairchild Semi | Power Field-Effect Transistor, 1.9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 7,890 |
| BSP171PL6327 | Infineon | Power Field-Effect Transistor, 1.9A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 7,858 |
| IRFD9120 | Vishay | Power Field-Effect Transistor, 1A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 7,801 |
| BTS413A | Siemens | Power Field-Effect Transistor, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 7,790 |
| STB60NE06L-16T4 | ST Micro | Power Field-Effect Transistor, 60A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 7,710 |
| IRF7380TRPBF | Infineon | Power Field-Effect Transistor, 3.6A I(D), 80V, 0.073ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 7,695 |
| IRFI620GPBF | Vishay | Power Field-Effect Transistor, 4.1A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 7,650 |
| STD2HNK60Z-1 | ST Micro | Power Field-Effect Transistor, 2A I(D), 600V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 7,650 |
| IRF7807TRPBF | Infineon | Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 7,645 |
| SQS484EN-T1_GE3 | Vishay | Power Field-Effect Transistor, 16A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 7,612 |
| DMN2040LTS-13 | Diodes | Power Field-Effect Transistor, 6.7A I(D), 20V, 0.026ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 7,500 |
| HUF76129D3ST | Fairchild Semi | Power Field-Effect Transistor, 20A I(D), 30V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 7,500 |
| MMSF5N03HDR2 | Onsemi | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 7,500 |
| PHD6N10E | NXP | Power Field-Effect Transistor, 6.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 7,500 |
| PHD9NQ20T | Nexperia | Power Field-Effect Transistor, 8.7A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 7,500 |
| PHN110 | NXP | Power Field-Effect Transistor, 4A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 7,500 |
| SI4542DY-T1 | Vishay | Power Field-Effect Transistor, 6.9A I(D), 30V, 0.025ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 7,500 |
| STD18N65M5 | ST Micro | Power Field-Effect Transistor, 15A I(D), 650V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 7,500 |
| STD9N65M2 | ST Micro | Power Field-Effect Transistor | 7,500 |
| STD5NK50ZT4 | ST Micro | Power Field-Effect Transistor, 4.4A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 7,495 |
| FQU1N60CTU | Onsemi | Power Field-Effect Transistor, 1A I(D), 600V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 7,340 |
| BUK221-50DY | NXP | Power Field-Effect Transistor, 4A I(D), 45V, 0.09ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 7,200 |
| IRF7306QTRPBF | IR | Power Field-Effect Transistor, 3.6A I(D), P-Channel, Metal-oxide Semiconductor FET | 7,190 |
| SUD40N10-25-E3 | Vishay | Power Field-Effect Transistor, 40A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 7,184 |
| BUK456-200A | NXP | Power Field-Effect Transistor, 19A I(D), 200V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 7,050 |
| IRFI520N | IR | Power Field-Effect Transistor, 7.6A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 7,039 |
| NDB6020P | Onsemi | Power Field-Effect Transistor, 24A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 6,850 |
| NTD18N06T4G | Onsemi | Power Field-Effect Transistor, 18A I(D), 60V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,817 |
| AON1611 | Alpha Omega | Power Field-Effect Transistor, 4A I(D), 20V, 0.058ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 6,791 |
| IRFB9N60APBF | Vishay | Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 6,786 |
| IRFR110PBF | Vishay | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 6,750 |
| IRFR9020TRPBF | Vishay | Power Field-Effect Transistor, 9.9A I(D), 50V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 6,750 |
| BUZ100-E3044 | Infineon | Power Field-Effect Transistor, 60A I(D), 50V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,745 |
| BUK7608-55A | Nexperia | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,704 |
| IRF7103QTRPBF | Infineon | Power Field-Effect Transistor, 3A I(D), N-Channel, Metal-oxide Semiconductor FET | 6,673 |
| IRFR310 | Vishay | Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 6,636 |
| SPB04N60C3 | Infineon | Power Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 6,600 |
| FDS6982 | Fairchild Semi | Power Field-Effect Transistor, 6.3A I(D), 30V, 0.028ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,590 |
| IRCZ34 | Thomson Elec | Power Field-Effect Transistor, 30A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 6,550 |
| IRF7811AVPBF | Infineon | Power Field-Effect Transistor | 6,550 |
| FML19N50G | Fuji Elec | Power Field-Effect Transistor, 1.4A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,495 |
| SI2305DS-T1 | Siliconix | Power Field-Effect Transistor, 3.5A I(D), 8V, 0.052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 | 6,460 |
| IRFR220PBF | Vishay | Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 6,450 |
| ZVN2106GTA | Diodes | Power Field-Effect Transistor, 0.71A I(D), 60V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,405 |
| IRFR420PBF | Vishay | Power Field-Effect Transistor, 2.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 6,370 |
| HAT2165H-EL-E | Renesas | Power Field-Effect Transistor, 55A I(D), 30V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,365 |
| SPP08N50C3 | Infineon | Power Field-Effect Transistor, 7.6A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 6,344 |
| IRFR430APBF | Vishay | Power Field-Effect Transistor, 5A I(D), 500V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 6,225 |
| IRF610STRLPBF | Vishay | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 6,190 |
| IRF7103IPBF | IR | Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,175 |
| CSD18531Q5A | TI | Power Field-Effect Transistor, 100A I(D), 60V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,129 |
| IRF7471TRPBF | IR | Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 6,110 |
| IRF7314TRPBF | Infineon | Power Field-Effect Transistor, 5.3A I(D), 20V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 6,100 |
| IRFU9014PBF | Vishay | Power Field-Effect Transistor, 5.1A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 6,099 |
| BTS112A | Infineon | Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 6,097 |
| BUZ71A | ST Micro | Power Field-Effect Transistor, 13A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 6,080 |
| NP90N055PUH-E1-AY | Renesas | Power Field-Effect Transistor | 6,060 |
| BTS247Z | Infineon | Power Field-Effect Transistor, 33A I(D), 55V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,046 |
| AO4476A | Alpha Omega | Power Field-Effect Transistor, 15A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 6,000 |
| AO8822 | Alpha Omega | Power Field-Effect Transistor, 7A I(D), N-Channel, Metal-oxide Semiconductor FET | 6,000 |
| AON6220 | Alpha Omega | Power Field-Effect Transistor, 48A I(D), 100V, 0.0074ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| BSC150N03LDG | Infineon | Power Field-Effect Transistor, 20A I(D), 30V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| BSP318SL6327 | Infineon | Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| DMG2307L-7 | Diodes | Power Field-Effect Transistor, 2.5A I(D), 30V, 0.134ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| FDMC8884 | Fairchild Semi | Power Field-Effect Transistor, 9A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| FDMS7580 | Onsemi | Power Field-Effect Transistor, 15A I(D), 25V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| IPB80N04S4-04 | Infineon | Power Field-Effect Transistor, 80A I(D), 40V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 6,000 |
| IRF1010ESTRLPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| IRFHS8242TR2PBF | IR | Power Field-Effect Transistor, 9.9A I(D), 25V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| IRFR9110TRLPBF | Vishay | Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 6,000 |
| IRFU320PBF | Vishay | Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 6,000 |
| IRLR014 | IR | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 6,000 |
| MGSF2N02ELT1G | Onsemi | Power Field-Effect Transistor, 2.8A I(D), 20V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 | 6,000 |
| PMPB33XN | Nexperia | Power Field-Effect Transistor, 4.3A I(D), 30V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| QS6J1TR | Rohm | Power Field-Effect Transistor, 1.5A I(D), 20V, 0.235ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SI1012R | Vishay | Power Field-Effect Transistor, 0.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 6,000 |
| SI5415AEDU-T1-GE3 | Vishay | Power Field-Effect Transistor | 6,000 |
| SI5429DU-T1-GE3 | Vishay | Power Field-Effect Transistor | 6,000 |
| SI5459DU-T1-GE3 | Siliconix | Power Field-Effect Transistor, 6.7A I(D), 20V, 0.052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SI7148DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 28A I(D), 75V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SI7634BDP-T1-GE3 | Vishay | Power Field-Effect Transistor, 22.5A I(D), 30V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SI7904BDN-T1-E3 | Vishay | Power Field-Effect Transistor, 6A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIA527DJ-T1-GE3 | Vishay | Power Field-Effect Transistor, 4.5A I(D), 12V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIAA40DJ-T1-GE3 | Vishay | Power Field-Effect Transistor, 30A I(D), 40V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIDR626DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 100A I(D), 60V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIHFR220TRL-GE3 | Vishay | Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 6,000 |
| SIHFR320-GE3 | Vishay | Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 6,000 |
| SIHJ6N65E-T1-GE3 | Vishay | Power Field-Effect Transistor, 5.6A I(D), 650V, 0.868ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIJ438DP-T1-GE3 | Vishay | Power Field-Effect Transistor | 6,000 |
| SIJ470DP-T1-GE3 | Vishay | Power Field-Effect Transistor | 6,000 |
| SIJ482DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 60A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 6,000 |
| SIJA54DP-T1-GE3 | Vishay | Power Field-Effect Transistor | 6,000 |
| SIR172ADP-T1-GE3 | Vishay | Power Field-Effect Transistor, 24A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIR606DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 37A I(D), 100V, 0.0162ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIR638DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 100A I(D), 40V, 0.00088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIR692DP-T1-RE3 | Vishay | Power Field-Effect Transistor, 24.2A I(D), 250V, 0.067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIR788DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 60A I(D), 30V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIRA10BDP-T1-GE3 | Vishay | Power Field-Effect Transistor, 60A I(D), 30V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIRA12BDP-T1-GE3 | Vishay | Power Field-Effect Transistor, 60A I(D), 30V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIRA52DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 60A I(D), 40V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIRA54DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 60A I(D), 40V, 0.00235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIRA58DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 109A I(D), 40V, 0.00265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIS176LDN-T1-GE3 | Vishay | Power Field-Effect Transistor, 42.3A I(D), 70V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIS410DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 22A I(D), 20V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SIS435DNT-T1-GE3 | Vishay | Power Field-Effect Transistor, 30A I(D), 20V, 0.0054ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SISA24DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 60A I(D), 25V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SISH106DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 12.5A I(D), 20V, 0.0062ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET | 6,000 |
| SISH129DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 35A I(D), 30V, 0.0114ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SISH402DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 35A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SISH410DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 35A I(D), 20V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SISH434DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 35A I(D), 40V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SISH617DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 35A I(D), 30V, 0.0123ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SISS04DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 80A I(D), 30V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SQ3481EV-T1_GE3 | Vishay | Power Field-Effect Transistor, 7.5A I(D), 30V, 0.043ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193C | 6,000 |
| SQ7414EN-T1-E3 | Vishay | Power Field-Effect Transistor, 5.6A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SQJ401EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 32A I(D), 12V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SQJ465EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 8A I(D), 60V, 0.085ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SQJ858AEP-T1_GE3 | Vishay | Power Field-Effect Transistor, 58A I(D), 40V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SQJ952EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 23A I(D), 60V, 0.024ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SQS407ENW-T1_GE3 | Vishay | Power Field-Effect Transistor, 16A I(D), 30V, 0.018ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SQS415ENW-T1_GE3 | Vishay | Power Field-Effect Transistor, 16A I(D), 40V, 0.0161ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| SSM3K16FU(TE85L) | Toshiba | Power Field-Effect Transistor, 0.1A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 6,000 |
| STL4P3LLH6 | ST Micro | Power Field-Effect Transistor, 4A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET | 6,000 |
| STL51N3LLH5 | ST Micro | Power Field-Effect Transistor, 51A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 6,000 |
| STL60N3LLH5 | ST Micro | Power Field-Effect Transistor, 17A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| STL8N65M5 | ST Micro | Power Field-Effect Transistor, 1.4A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| STL8P2UH7 | ST Micro | Power Field-Effect Transistor | 6,000 |
| STL9N60M2 | ST Micro | Power Field-Effect Transistor | 6,000 |
| STL9N65M2 | ST Micro | Power Field-Effect Transistor, 4.5A I(D), 650V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 6,000 |
| STP3NK50Z | ST Micro | Power Field-Effect Transistor | 6,000 |
| STU7N65M2 | ST Micro | Power Field-Effect Transistor | 6,000 |
| SI2306DS-T1 | Siliconix | Power Field-Effect Transistor, 3.5A I(D), 30V, 0.057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | 5,950 |
| IRFR120ZTRPBF | Infineon | Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 5,943 |
| IRF7470TRPBF | IR | Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 5,910 |
| SPD18P06PG | Infineon | Power Field-Effect Transistor, 18.6A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB | 5,900 |
| SQ2362ES-T1_GE3 | Vishay | Power Field-Effect Transistor, 4.3A I(D), 60V, 0.068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | 5,900 |
| STF7NM60N | ST Micro | Power Field-Effect Transistor, 5A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 5,900 |
| STF2N62K3 | ST Micro | Power Field-Effect Transistor, 2.2A I(D), 620V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 5,850 |
| STD4NK60ZT4 | ST Micro | Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 5,838 |
| SI7421DN-T1-E3 | Vishay | Power Field-Effect Transistor, 6.4A I(D), 30V, 0.025ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 5,815 |
| IRLR8259PBF | Infineon | Power Field-Effect Transistor, 42A I(D), 25V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 5,775 |
| IRF540NSTRL | IR | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 5,725 |
| SQS460EN-T1_GE3 | Vishay | Power Field-Effect Transistor, 8A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,725 |
| 2SJ317NY | Renesas Tech | Power Field-Effect Transistor, 2A I(D), 12V, 0.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 5,720 |
| STW10NK60Z | ST Micro | Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 5,715 |
| IPB50N10S3L-16 | Infineon | Power Field-Effect Transistor, 50A I(D), 100V, 0.0206ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 5,700 |
| S838T | Vishay | Power Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 5,700 |
| STP9NK50ZFP | ST Micro | Power Field-Effect Transistor, 7.2A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 5,700 |
| STU3LN62K3 | ST Micro | Power Field-Effect Transistor, 2.5A I(D), 620V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 5,700 |
| IRFI644GPBF | Vishay | Power Field-Effect Transistor, 7.9A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 5,699 |
| FQU5N40TU | Onsemi | Power Field-Effect Transistor, 3.4A I(D), 400V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 5,689 |
| IRLML6401TR | IR | Power Field-Effect Transistor, 4.3A I(D), 12V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 5,680 |
| FDP2710 | Onsemi | Power Field-Effect Transistor, 50A I(D), 250V, 0.0425ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 5,648 |
| IRFR9024TRPBF | IR | Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 5,625 |
| GFB50N03 | General Semi | Power Field-Effect Transistor, 50A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 5,600 |
| GFB70N03 | General Semi | Power Field-Effect Transistor, 70A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 5,600 |
| IRFD014 | Vishay | Power Field-Effect Transistor, 1.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,600 |
| 2SK2542 | Toshiba | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 5,563 |
| SQM40N15-38_GE3 | Vishay | Power Field-Effect Transistor, 40A I(D), 150V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 5,533 |
| FQD7P20TF | Fairchild Semi | Power Field-Effect Transistor, 5.7A I(D), 200V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 5,525 |
| IRFU024PBF | Vishay | Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 5,514 |
| SI4949EY | Siliconix | Power Field-Effect Transistor, 4.5A I(D), 60V, 0.055ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 5,500 |
| FDY1002PZ | Onsemi | Power Field-Effect Transistor, -.83A I(D), -20V, 1.8ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 5,480 |
| IRFR220 | IR | Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 5,458 |
| FDP3682 | Onsemi | Power Field-Effect Transistor, 6A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 5,450 |
| RFD16N05SM9A | Intersil | Power Field-Effect Transistor, 16A I(D), 50V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 5,415 |
| IRFR420 | Fairchild Semi | Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 5,400 |
| DMG6968UQ-7 | Diodes | Power Field-Effect Transistor, 6.5A I(D), 20V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,380 |
| STP4N52K3 | ST Micro | Power Field-Effect Transistor, 2.5A I(D), 525V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 5,350 |
| IPD15N06S2L-64 | Infineon | Power Field-Effect Transistor, 19A I(D), 55V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 5,315 |
| SI4920DY-T1 | Vishay | Power Field-Effect Transistor, 6.9A I(D), N-Channel, Metal-oxide Semiconductor FET | 5,308 |
| TN5325N8-G | Microchip | Power Field-Effect Transistor, 0.316A I(D), 250V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA | 5,295 |
| SISH615ADN-T1-GE3 | Vishay | Power Field-Effect Transistor, 35A I(D), 20V, 0.0044ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 5,275 |
| IRLR3714ZPBF | IR | Power Field-Effect Transistor, 30A I(D), 20V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 5,270 |
| STF8NM50N | ST Micro | Power Field-Effect Transistor, 5A I(D), 500V, 0.79ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 5,250 |
| IRFR210TR | Vishay | Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 5,245 |
| IPB90N06S4-04 | Infineon | Power Field-Effect Transistor, 90A I(D), 60V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 5,220 |
| PHT6N06T | Nexperia | Power Field-Effect Transistor, 5.5A I(D), 55V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,205 |
| SI4559ADY-T1-E3 | Vishay | Power Field-Effect Transistor, 4.3A I(D), 60V, 0.058ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 5,190 |
| FDS7064SN3 | Fairchild Semi | Power Field-Effect Transistor, 16A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,180 |
| NTD24N06LT4 | Onsemi | Power Field-Effect Transistor, 24A I(D), 60V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,178 |
| IRFUC20PBF | Vishay | Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 5,175 |
| SIHD14N60E-GE3 | Vishay | Power Field-Effect Transistor, 13A I(D), 600V, 0.309ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 5,174 |
| BSC077N12NS3G | Infineon | Power Field-Effect Transistor, 98A I(D), 120V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,150 |
| STP4NA40FI | ST Micro | Power Field-Effect Transistor, 2.8A I(D), 400V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 5,150 |
| IRF7343TRPBF | Infineon | Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 5,145 |
| STS8DNF3LL | ST Micro | Power Field-Effect Transistor, 8A I(D), 30V, 0.024ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,135 |
| ZXMHC3A01T8TA | Diodes | Power Field-Effect Transistor, 2.7A I(D), 30V, 0.12ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 5,027 |
| AOD2N100 | Alpha Omega | Power Field-Effect Transistor, 2A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 5,000 |
| AON7430 | Alpha Omega | Power Field-Effect Transistor, 34A I(D), 30V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,000 |
| AON7502 | Alpha Omega | Power Field-Effect Transistor, 30A I(D), 30V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,000 |
| BSC090N03MSG | Infineon | Power Field-Effect Transistor, 12A I(D), 30V, 0.0112ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,000 |
| BUK9275-100A | Nexperia | Power Field-Effect Transistor, 21.7A I(D), 100V, 0.084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 5,000 |
| BUK9775-55A | NXP | Power Field-Effect Transistor, 11A I(D), 55V, 0.084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 5,000 |
| FDD8444L | Fairchild Semi | Power Field-Effect Transistor, 16A I(D), 40V, 0.0107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 5,000 |
| HUFA76409D3ST | Intersil | Power Field-Effect Transistor, 18A I(D), 60V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 5,000 |
| IPD50N03S4L-06 | Infineon | Power Field-Effect Transistor, 50A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 5,000 |
| IRF6643TR1PBF | IR | Power Field-Effect Transistor, 6.2A I(D), 150V, 0.0345ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,000 |
| IRFBG30PBF | Vishay | Power Field-Effect Transistor, 3.1A I(D), 1000V, 5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 5,000 |
| IRFR3209A | Fairchild Semi | Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 5,000 |
| IRLR034A | Samsung | Power Field-Effect Transistor, 23A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 5,000 |
| MPS2907AG | Onsemi | Power Field-Effect Transistor | 5,000 |
| NVTFS5826NLTAG | Onsemi | Power Field-Effect Transistor, 7.6A I(D), 60V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,000 |
| PHP125 | NXP | Power Field-Effect Transistor, 2.5A I(D), 30V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 5,000 |
| PHT6NQ10T | NXP | Power Field-Effect Transistor, 3A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,000 |
| RD3G400GNTL | Rohm | Power Field-Effect Transistor, 40A I(D), 40V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 5,000 |
| SI4162DY-T1-GE3 | Vishay | Power Field-Effect Transistor, 19.3A I(D), 30V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 5,000 |
| SI9410DY-T1 | Vishay | Power Field-Effect Transistor, 7A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,000 |
| SPD04N80C3 | Infineon | Power Field-Effect Transistor, 4A I(D), 800V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 5,000 |
| STB6N65M2 | ST Micro | Power Field-Effect Transistor | 5,000 |
| STD13NM60N | ST Micro | Power Field-Effect Transistor, 11A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 5,000 |
| STD1HN60K3 | ST Micro | Power Field-Effect Transistor | 5,000 |
| STD3LN62K3 | ST Micro | Power Field-Effect Transistor, 2.5A I(D), 620V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 5,000 |
| STD3N62K3 | ST Micro | Power Field-Effect Transistor, 2.7A I(D), 620V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 5,000 |
| STD3NM60T4 | ST Micro | Power Field-Effect Transistor, 3A I(D), 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 5,000 |
| STD40NF03LT4 | ST Micro | Power Field-Effect Transistor, 40A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 5,000 |
| STD6NK50ZT4 | ST Micro | Power Field-Effect Transistor, 5.6A I(D), 500V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 5,000 |
| STD7N52DK3 | ST Micro | Power Field-Effect Transistor, 6A I(D), 525V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 5,000 |
| STD7NM60N | ST Micro | Power Field-Effect Transistor, 5A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 5,000 |
| STP3NB60 | ST Micro | Power Field-Effect Transistor, 3.3A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 5,000 |
| TPH12008NH | Toshiba | Power Field-Effect Transistor, 44A I(D), 80V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,000 |
| TPH4R10ANL | Toshiba | Power Field-Effect Transistor | 5,000 |
| TPH4R606NH | Toshiba | Power Field-Effect Transistor, 32A I(D), 60V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5,000 |
| TSM090N08PQ56RLG | Taiwan Semi | Power Field-Effect Transistor | 5,000 |
| TSM120N10PQ56RLG | Taiwan Semi | Power Field-Effect Transistor | 5,000 |
| TSM4NB60CPROG | Taiwan Semi | Power Field-Effect Transistor, 4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 5,000 |
| TSM60N380CPROG | Taiwan Semi | Power Field-Effect Transistor | 5,000 |
| TSM6963SDCARV | Taiwan Semi | Power Field-Effect Transistor, 4.5A I(D), 20V, 0.03ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 5,000 |
| UPA2790GR-E1-A | Renesas | Power Field-Effect Transistor, 6A I(D), N-Channel and P-Channel, Metal-oxide Semiconductor FET | 5,000 |
| SI4902DY | Vishay | Power Field-Effect Transistor, 6.7A I(D), N-Channel, Metal-oxide Semiconductor FET | 4,996 |
| IRF8714TRPBF | Infineon | Power Field-Effect Transistor, 14A I(D), 30V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,980 |
| BUZ10L-E3045 | Infineon | Power Field-Effect Transistor, 23A I(D), 50V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,974 |
| IRF7606TR | IR | Power Field-Effect Transistor, 3.6A I(D), 30V, 0.09ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 4,970 |
| BTS240A | Infineon | Power Field-Effect Transistor, 58A I(D), 50V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 | 4,950 |
| SI7716ADN-T1-GE3 | Vishay | Power Field-Effect Transistor, 12A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,941 |
| IPD80R2K8CE | Infineon | Power Field-Effect Transistor, 1.9A I(D), 800V, 2.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 4,930 |
| SUD50N02-09P | Vishay | Power Field-Effect Transistor, 20A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 4,925 |
| AON7444 | Alpha Omega | Power Field-Effect Transistor, 33A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,900 |
| STD1NK80ZT4 | ST Micro | Power Field-Effect Transistor, 1A I(D), 800V, 16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 4,900 |
| IRFR3910TRPBF | Infineon | Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 4,880 |
| BSC190N15NS3G | Infineon | Power Field-Effect Transistor, 50A I(D), 150V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,840 |
| 2SK2663 | Shindengen | Power Field-Effect Transistor, 1A I(D), 900V, 14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,826 |
| FDS9926A | Onsemi | Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,810 |
| BUK7628-100A/T3 | Nexperia | Power Field-Effect Transistor, 47A I(D), 100V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,800 |
| BUK9608-55A | Nexperia | Power Field-Effect Transistor, 125A I(D), 55V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,800 |
| GFB75N03 | General Semi | Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 4,800 |
| HUF75829D3ST | Fairchild Semi | Power Field-Effect Transistor, 18A I(D), 150V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 4,800 |
| IRFPS3815PBF | Infineon | Power Field-Effect Transistor, 105A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,770 |
| IRFR024NTRPBF | Infineon | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 4,745 |
| IXTA1N100P-TRL | Littelfuse | Power Field-Effect Transistor, 1A I(D), 1000V, 15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 4,745 |
| IRFPG30PBF | Vishay | Power Field-Effect Transistor, 3.1A I(D), 1000V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 4,710 |
| IRFD9110PBF | Vishay | Power Field-Effect Transistor, 0.7A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 4,700 |
| FDB7030BL | Onsemi | Power Field-Effect Transistor, 60A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 4,695 |
| BSP315PL6327 | Infineon | Power Field-Effect Transistor, 1.17A I(D), 60V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 4,655 |
| AUIRLR120N | Infineon | Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 4,650 |
| RFP4N05 | Harris | Power Field-Effect Transistor, 4A I(D), 50V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 4,641 |
| IRLU8256PBF | IR | Power Field-Effect Transistor, 81A I(D), 25V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 4,625 |
| RFD8P06LESM9A | Fairchild Semi | Power Field-Effect Transistor, 8A I(D), 60V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 4,620 |
| SUD25N06-45L-E3 | Vishay | Power Field-Effect Transistor, 25A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 4,598 |
| STB85NF55T4 | ST Micro | Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 4,580 |
| SI7850ADP-T1-GE3 | Vishay | Power Field-Effect Transistor, 12A I(D), 60V, 0.0195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,570 |
| IRFU1010ZPBF | IR | Power Field-Effect Transistor, 42A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 4,549 |
| BUK7Y08-40B | Nexperia | Power Field-Effect Transistor, 75A I(D), 40V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 | 4,535 |
| IRL7486MTRPBF | Infineon | Power Field-Effect Transistor, 209A I(D), 40V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,520 |
| BUK6Y14-40P | Nexperia | Power Field-Effect Transistor, 64A I(D), 40V, 0.014ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 | 4,500 |
| SPU02N60S5 | Infineon | Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 4,500 |
| IPD30N10S3L-34 | Infineon | Power Field-Effect Transistor, 30A I(D), 100V, 0.0418ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AB | 4,489 |
| STB21N65M5 | ST Micro | Power Field-Effect Transistor, 17A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 4,460 |
| FDD6637 | Fairchild Semi | Power Field-Effect Transistor, 13A I(D), 35V, 0.0116ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 4,440 |
| BUK9880-55/CU | Nexperia | Power Field-Effect Transistor, 3.5A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,426 |
| FQD7N10LTM | Onsemi | Power Field-Effect Transistor, 5.8A I(D), 100V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 4,407 |
| IRF840LC | Siliconix | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 4,400 |
| STS5NF60L | ST Micro | Power Field-Effect Transistor, 5A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,395 |
| IRF1404S | Infineon | Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,382 |
| IRFP140PBF | Vishay | Power Field-Effect Transistor, 31A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 4,360 |
| IRFR120PBF | Vishay | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 4,320 |
| STB36NM60ND | ST Micro | Power Field-Effect Transistor, 29A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 4,315 |
| IRF3205ZPBF | IR | Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 4,305 |
| IRLR120PBF | Vishay | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 4,275 |
| IRLML6402TRPBF | Infineon | Power Field-Effect Transistor, 3.7A I(D), 20V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | 4,270 |
| IRFIBC30GPBF | Vishay | Power Field-Effect Transistor, 2.5A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 4,200 |
| BUK78150-55 | NXP | Power Field-Effect Transistor, 5.5A I(D), 55V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,194 |
| STP11NM60ND | ST Micro | Power Field-Effect Transistor, 10A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 4,190 |
| MMDF2N02ER2 | Onsemi | Power Field-Effect Transistor, 3.6A I(D), 25V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,174 |
| IRF7601PBF | Infineon | Power Field-Effect Transistor, 5.7A I(D), 20V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,160 |
| IRF7416 | Infineon | Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 4,159 |
| STP5N52K3 | ST Micro | Power Field-Effect Transistor, 4.4A I(D), 525V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 4,150 |
| IRLR110PBF | Vishay | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 4,125 |
| BSP100 | NXP | Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,060 |
| IRLR3915PBF | IR | Power Field-Effect Transistor, 30A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 4,050 |
| BSC050N03LSG | Infineon | Power Field-Effect Transistor, 18A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,020 |
| SQ2361ES-T1_GE3 | Vishay | Power Field-Effect Transistor, 2.8A I(D), 60V, 0.177ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | 4,011 |
| AOB298L | Alpha Omega | Power Field-Effect Transistor, 58A I(D), 100V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 4,000 |
| AOU4N60 | Alpha Omega | Power Field-Effect Transistor, 4A I(D), 600V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 4,000 |
| AUIRF7303QTR | Infineon | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 4,000 |
| AUIRF7316QTR | Infineon | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 4,000 |
| AUIRF7343QTR | Infineon | Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 4,000 |
| AUIRFN8401TR | Infineon | Power Field-Effect Transistor | 4,000 |
| FQPF10N50CF | Onsemi | Power Field-Effect Transistor, 10A I(D), 500V, 0.61ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,000 |
| IRF7316TRPBF | Infineon | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 4,000 |
| IRF7809AVTRPBF | Infineon | Power Field-Effect Transistor, 13.3A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,000 |
| IRF9952TR | IR-HiRel | Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 4,000 |
| IRFH5104TRPBF | Infineon | Power Field-Effect Transistor, 24A I(D), 40V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,000 |
| IRFH5220TRPBF | Infineon | Power Field-Effect Transistor, 3.8A I(D), 200V, 0.0999ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,000 |
| IRFH7107TRPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 4,000 |
| IRFH7110TRPBF | Infineon | Power Field-Effect Transistor, 11A I(D), 100V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,000 |
| IRFH7188TRPBF | Infineon | Power Field-Effect Transistor, 18A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,000 |
| IRFH8303TRPBF | Infineon | Power Field-Effect Transistor, 43A I(D), 30V, 0.0017ohm, 1-Element, N-Channel, Metal-oxide Semiconductor FET | 4,000 |
| IRFH8316TRPBF | Infineon | Power Field-Effect Transistor, 50A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 4,000 |
| IRFHM4231TRPBF | Infineon | Power Field-Effect Transistor, 22A I(D), 25V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,000 |
| IRFHM8228TRPBF | Infineon | Power Field-Effect Transistor, 19A I(D), 25V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,000 |
| IRFHM830TRPBF | Infineon | Power Field-Effect Transistor, 21A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,000 |
| IRFHM8337TRPBF | Infineon | Power Field-Effect Transistor, 12A I(D), 30V, 0.0124ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,000 |
| IRFHS8342TRPBF | Infineon | Power Field-Effect Transistor, 8.8A I(D), 30V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,000 |
| IRFR024TRPBF | Vishay | Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 4,000 |
| IRFR3504ZTRPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 4,000 |
| IRFZ24N | Philips Semi | Power Field-Effect Transistor, 17A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 4,000 |
| IRLH7134TRPBF | Infineon | Power Field-Effect Transistor, 26A I(D), 40V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,000 |
| IRLR014TR | IR | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 4,000 |
| IRLR2705TR | IR | Power Field-Effect Transistor, 28A I(D), 55V, 0.051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 4,000 |
| IRLZ14STRLPBF | Vishay | Power Field-Effect Transistor, 10A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 4,000 |
| PHB37N06LT | NXP | Power Field-Effect Transistor, 37A I(D), 55V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,000 |
| SIHFR420TR-GE3 | Vishay | Power Field-Effect Transistor, 2.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 4,000 |
| SQD50N06-09L_GE3 | Vishay | Power Field-Effect Transistor, 50A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 4,000 |
| STF20NF20 | ST Micro | Power Field-Effect Transistor, 18A I(D), 200V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 4,000 |
| STF2LN60K3 | ST Micro | Power Field-Effect Transistor, 2A I(D), 600V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 4,000 |
| STF7N52K3 | ST Micro | Power Field-Effect Transistor, 6.3A I(D), 525V, 0.98ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 4,000 |
| STN4NF20L | ST Micro | Power Field-Effect Transistor, 1A I(D), 200V, 1.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 4,000 |
| STP5N60M2 | ST Micro | Power Field-Effect Transistor, 3.5A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 4,000 |
| STP75NF75FP | ST Micro | Power Field-Effect Transistor, 80A I(D), 75V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 4,000 |
| STP77N6F6 | ST Micro | Power Field-Effect Transistor, 77A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 4,000 |
| SUD40N08-16-E3 | Vishay | Power Field-Effect Transistor, 40A I(D), 80V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 4,000 |
| TSM4N90CIC0G | Taiwan Semi | Power Field-Effect Transistor | 4,000 |
| TSM7N90CIC0G | Taiwan Semi | Power Field-Effect Transistor | 4,000 |
| IRF7463PBF | Infineon | Power Field-Effect Transistor, 14A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 3,990 |
| IPD25CN10NG | Infineon | Power Field-Effect Transistor, 35A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 3,980 |
| SI7190DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 4.4A I(D), 250V, 0.118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,970 |
| STW15NB50 | ST Micro | Power Field-Effect Transistor, 14.6A I(D), 500V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 3,940 |
| STH15NA50 | ST Micro | Power Field-Effect Transistor, 14.6A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 | 3,921 |
| FDD8424H | Onsemi | Power Field-Effect Transistor, 20A I(D), 40V, 0.024ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,917 |
| NP100N055PUH-E1-AY | Renesas | Power Field-Effect Transistor | 3,910 |
| STF5N95K3 | ST Micro | Power Field-Effect Transistor, 4A I(D), 950V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,900 |
| FQD9N25TM | Onsemi | Power Field-Effect Transistor, 7.4A I(D), 250V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 3,889 |
| 2SK1585-T1-AZ | Renesas | Power Field-Effect Transistor, 1A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,860 |
| STU9N60M2 | ST Micro | Power Field-Effect Transistor | 3,825 |
| IRFR224TRPBF | Vishay | Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,815 |
| IRF7809AVPBF | Infineon | Power Field-Effect Transistor, 13.3A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 3,802 |
| FDB7030L_NL | Fairchild Semi | Power Field-Effect Transistor, 80A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 3,800 |
| IRFR420APBF | Vishay | Power Field-Effect Transistor, 3.3A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,799 |
| FQD3N60CTM-WS | Onsemi | Power Field-Effect Transistor, 2.4A I(D), 600V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,780 |
| IRFU120PBF | Vishay | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 3,750 |
| STP11N60DM2 | ST Micro | Power Field-Effect Transistor | 3,750 |
| STP17NK40ZFP | ST Micro | Power Field-Effect Transistor, 15A I(D), 400V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,750 |
| STD5NK40Z-1 | ST Micro | Power Field-Effect Transistor, 3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 3,745 |
| ZVN2120GTA | Diodes | Power Field-Effect Transistor, 0.32A I(D), 200V, 10ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,725 |
| IRF610 | Fairchild Semi | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,724 |
| BUZ72A | ST Micro | Power Field-Effect Transistor, 11A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,719 |
| IRFR310PBF | Vishay | Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,719 |
| IAUS300N10S5N015T | Infineon | Power Field-Effect Transistor | 3,704 |
| IRLH6224TRPBF | Infineon | Power Field-Effect Transistor, 80A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,700 |
| STP7NK80ZFP | ST Micro | Power Field-Effect Transistor, 5.2A I(D), 800V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,700 |
| IRLD014PBF | Vishay | Power Field-Effect Transistor, 1.7A I(D), 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,695 |
| SI7850DP-T1-E3 | Vishay | Power Field-Effect Transistor, 6.2A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,680 |
| FDMC8854 | Onsemi | Power Field-Effect Transistor, 15A I(D), 30V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,670 |
| BUK7C06-40AITE | Nexperia | Power Field-Effect Transistor, 75A I(D), 40V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,658 |
| NP88N055KUG-E1-AY | Renesas | Power Field-Effect Transistor, 88A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,655 |
| IRLHS6242TR2PBF | IR | Power Field-Effect Transistor, 10A I(D), 20V, 0.0155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,600 |
| STP8NM50 | ST Micro | Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,600 |
| STU2NK100Z | ST Micro | Power Field-Effect Transistor, 1.85A I(D), 1000V, 8.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 3,600 |
| NVF2955T1G | Onsemi | Power Field-Effect Transistor, 1.7A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 3,597 |
| SI9948AEY-T1-E3 | Vishay | Power Field-Effect Transistor | 3,597 |
| IRF7413ZTRPBF | Infineon | Power Field-Effect Transistor, 13A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 3,595 |
| STD17N06L | ST Micro | Power Field-Effect Transistor, 17A I(D), 60V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,580 |
| IRLU8259PBF | IR | Power Field-Effect Transistor, 42A I(D), 25V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 3,575 |
| PHT8N06LT | NXP | Power Field-Effect Transistor, 2.2A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,565 |
| IRF7495TR | IR | Power Field-Effect Transistor, 7.3A I(D), 100V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 3,560 |
| FQT7N10LTF | Fairchild Semi | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,555 |
| IPD90N04S3-04 | Infineon | Power Field-Effect Transistor, 90A I(D), 40V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,545 |
| RFD8P05SM | Harris | Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,517 |
| FDN5618P | Onsemi | Power Field-Effect Transistor, 1.25A I(D), 60V, 0.17ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,513 |
| AOI4N60 | Alpha Omega | Power Field-Effect Transistor, 4A I(D), 600V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251A | 3,500 |
| FQPF11P06 | Onsemi | Power Field-Effect Transistor, 8.6A I(D), 60V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,500 |
| SIHP18N50C-E3 | Vishay | Power Field-Effect Transistor, 18A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,500 |
| IRFIZ46NPBF | IR | Power Field-Effect Transistor, 33A I(D), 55V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,498 |
| SPD08P06PG | Infineon | Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 3,469 |
| IRFZ44NSTRLPBF | Infineon | Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,451 |
| IRL2203N | Infineon | Power Field-Effect Transistor, 116A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,450 |
| IRFI9640GPBF | Vishay | Power Field-Effect Transistor, 6.1A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,449 |
| IRFR3607PBF | Infineon | Power Field-Effect Transistor, 56A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,443 |
| FQU13N10LTU | Onsemi | Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 3,430 |
| SI7137DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 42A I(D), 20V, 0.00195ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,420 |
| STP20NF06L | ST Micro | Power Field-Effect Transistor, 20A I(D), 60V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,420 |
| STF11N52K3 | ST Micro | Power Field-Effect Transistor, 10A I(D), 525V, 0.51ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,408 |
| BSP318SH6327 | Infineon | Power Field-Effect Transistor, 2.6A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,405 |
| IRFHM831TRPBF | Infineon | Power Field-Effect Transistor, 14A I(D), 30V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,400 |
| STP4NK50ZD | ST Micro | Power Field-Effect Transistor, 3A I(D), 500V, 2.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,400 |
| STP22NF03L | ST Micro | Power Field-Effect Transistor, 22A I(D), 30V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,367 |
| ZXMP6A16DN8TA | Diodes | Power Field-Effect Transistor, 2.9A I(D), 60V, 0.085ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,360 |
| IPD35N10S3L-26 | Infineon | Power Field-Effect Transistor, 35A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 3,355 |
| MDF5N50BTH | Magnachip | Power Field-Effect Transistor | 3,350 |
| IRLD014 | Vishay | Power Field-Effect Transistor, 1.7A I(D), 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,347 |
| IRF9Z24STRR | Vishay | Power Field-Effect Transistor, 11A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 3,340 |
| SI7844DP-T1-E3 | Vishay | Power Field-Effect Transistor, 6.4A I(D), 30V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,335 |
| BTS132E3045A | Infineon | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | 3,327 |
| IRF9910PBF | Infineon | Power Field-Effect Transistor, 12A I(D), 20V, 0.0093ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 3,311 |
| SI4544DY | Siliconix | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.035ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,300 |
| STP5NK50ZFP | ST Micro | Power Field-Effect Transistor, 4.4A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,300 |
| BSP92E6327 | Infineon | Power Field-Effect Transistor, 0.2A I(D), 240V, 20ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,295 |
| PHT6N06LT | Nexperia | Power Field-Effect Transistor, 2.5A I(D), 55V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,295 |
| SI7450DP-T1 | Vishay | Power Field-Effect Transistor, 3.2A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,288 |
| IRF7805TR | IR | Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 3,278 |
| SI9945AEY-T1-E3 | Vishay | Power Field-Effect Transistor, 3.7A I(D), 60V, 0.08ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,275 |
| IRFU9212 | IR | Power Field-Effect Transistor, 1.6A I(D), 200V, 4.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 3,257 |
| IRF3707PBF | IR | Power Field-Effect Transistor, 62A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,250 |
| IRFR9014TR | Vishay | Power Field-Effect Transistor, 5.1A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,214 |
| IRF820STRLPBF | Vishay | Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,200 |
| IRF840STRLPBF | Vishay | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,200 |
| IRFH7936TRPBF | IR | Power Field-Effect Transistor, 76A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,200 |
| IRFHS8342TR2PBF | IR | Power Field-Effect Transistor, 8.8A I(D), 30V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,200 |
| IRFR120TRPBF | Vishay | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,200 |
| IRL3714ZPBF | IR | Power Field-Effect Transistor, 36A I(D), 20V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,200 |
| IRFU210PBF | Vishay | Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 3,199 |
| FQP33N10 | Onsemi | Power Field-Effect Transistor, 33A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,195 |
| NTMFS4927NT3G | Onsemi | Power Field-Effect Transistor | 3,190 |
| STL120N4F6AG | ST Micro | Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,181 |
| IRF7821TRPBF | Infineon | Power Field-Effect Transistor, 13.6A I(D), 30V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 3,170 |
| MMSF3P02HDR2 | Onsemi | Power Field-Effect Transistor, 5.6A I(D), 20V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,165 |
| FDS4435BZ | Onsemi | Power Field-Effect Transistor | 3,164 |
| BSP613PL6327 | Infineon | Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,160 |
| AUIRF3315S | Infineon | Power Field-Effect Transistor, 21A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,150 |
| IRF730ASPBF | Vishay | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,150 |
| STP11NK40ZFP | ST Micro | Power Field-Effect Transistor, 9A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,150 |
| MTP12N10E | Onsemi | Power Field-Effect Transistor, 12A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,143 |
| BUK98150-55 | Nexperia | Power Field-Effect Transistor, 5.5A I(D), 55V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,135 |
| CSD18503Q5A | TI | Power Field-Effect Transistor, 100A I(D), 40V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,129 |
| IRFP254PBF | Vishay | Power Field-Effect Transistor, 23A I(D), 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 3,125 |
| FQU5N60C | Onsemi | Power Field-Effect Transistor, 2.8A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,124 |
| IRF8313TRPBF | IR | Power Field-Effect Transistor, 9.7A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 3,120 |
| IRF7831TRPBF | Infineon | Power Field-Effect Transistor, 21A I(D), 30V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 3,118 |
| FQP32N20C | Onsemi | Power Field-Effect Transistor, 28A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,115 |
| DMN6040SK3-13 | Diodes | Power Field-Effect Transistor, 20A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 3,100 |
| MTB30P06VT4G | Onsemi | Power Field-Effect Transistor, 30A I(D), 60V, 0.08ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,100 |
| SI7121DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 10.6A I(D), 30V, 0.018ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,085 |
| IRF7530TRPBF | IR | Power Field-Effect Transistor, 5.4A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,068 |
| NDS9952 | National | Power Field-Effect Transistor, 3A I(D), 25V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,055 |
| IRL3714ZSPBF | IR | Power Field-Effect Transistor, 36A I(D), 20V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,035 |
| IRF7353D2TR | IR | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 3,025 |
| SPN01N60C3 | Infineon | Power Field-Effect Transistor, 0.3A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,010 |
| 2SJ296(S)TL | Renesas | Power Field-Effect Transistor, 15A I(D), 60V, 0.12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| 2SK2796STL-E | Renesas | Power Field-Effect Transistor, 5A I(D), 60V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| AO4406 | Alpha Omega | Power Field-Effect Transistor, 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| AO4840 | Alpha Omega | Power Field-Effect Transistor, 6A I(D), 40V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| AO6424 | Alpha Omega | Power Field-Effect Transistor, 5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,000 |
| AO6804A | Alpha Omega | Power Field-Effect Transistor, 5A I(D), 20V, 0.028ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| AOL1414 | Alpha Omega | Power Field-Effect Transistor, 85A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| AON1634 | Alpha Omega | Power Field-Effect Transistor, 4A I(D), 30V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| AON2403 | Alpha Omega | Power Field-Effect Transistor, 8A I(D), 12V, 0.021ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| AON2408 | Alpha Omega | Power Field-Effect Transistor, 8A I(D), 20V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| AON6156 | Alpha Omega | Power Field-Effect Transistor, 100A I(D), 45V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| AON6230 | Alpha Omega | Power Field-Effect Transistor, 85A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,000 |
| AON6260 | Alpha Omega | Power Field-Effect Transistor, 85A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,000 |
| AON6590 | Alpha Omega | Power Field-Effect Transistor, 100A I(D), 40V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| AON7520 | Alpha Omega | Power Field-Effect Transistor, 50A I(D), 30V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| AOT15S60L | Alpha Omega | Power Field-Effect Transistor, 15A I(D), 600V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,000 |
| AOTF11S60L | Alpha Omega | Power Field-Effect Transistor, 11A I(D), 600V, 0.399ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,000 |
| AUIRFS6535 | Infineon | Power Field-Effect Transistor, 19A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,000 |
| AUIRFZ44NS | Infineon | Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 3,000 |
| BUK78150-55A | Nexperia | Power Field-Effect Transistor, 5.5A I(D), 55V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| BUZ110SLE3045A | Infineon | Power Field-Effect Transistor, 80A I(D), 55V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 3,000 |
| BUZ72-E3044 | Infineon | Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| DMN1008UFDFQ-7 | Diodes | Power Field-Effect Transistor, 12.2A I(D), 12V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| DMN3020UFDF-7 | Diodes | Power Field-Effect Transistor, 15A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| DMP3100L-7 | Diodes | Power Field-Effect Transistor, 2.7A I(D), 30V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| FDMC2512SDC | Onsemi | Power Field-Effect Transistor, 32A I(D), 25V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA | 3,000 |
| FDMS0312S | Onsemi | Power Field-Effect Transistor, 19A I(D), 30V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | 3,000 |
| FDMS3008SDC | Onsemi | Power Field-Effect Transistor, 29A I(D), 30V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | 3,000 |
| FDMS7556S | Onsemi | Power Field-Effect Transistor, 35A I(D), 25V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | 3,000 |
| FDMS8025S | Onsemi | Power Field-Effect Transistor, 24A I(D), 30V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | 3,000 |
| FDMS8027S | Onsemi | Power Field-Effect Transistor, 18A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | 3,000 |
| FDMS8558S | Onsemi | Power Field-Effect Transistor, 38A I(D), 25V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | 3,000 |
| FDMS8560S | Onsemi | Power Field-Effect Transistor, 35A I(D), 25V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | 3,000 |
| FDMS8570S | Onsemi | Power Field-Effect Transistor, 28A I(D), 25V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | 3,000 |
| FDMS86105 | Onsemi | Power Field-Effect Transistor, 6A I(D), 100V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | 3,000 |
| FDPF5N50NZ | Onsemi | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,000 |
| GFD30N03 | Vishay Semi | Power Field-Effect Transistor, 43A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 3,000 |
| GFD50N03 | General Semi | Power Field-Effect Transistor, 65A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 3,000 |
| IRF3315STRRPBF | IR | Power Field-Effect Transistor, 21A I(D), 150V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| IRF8915TRPBF | Infineon | Power Field-Effect Transistor, 8.9A I(D), N-Channel, Metal-oxide Semiconductor FET | 3,000 |
| IRFIBE30GPBF | Vishay | Power Field-Effect Transistor, 2.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,000 |
| IRFR014TRLPBF | Vishay | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,000 |
| IRFR9014TRL | Vishay | Power Field-Effect Transistor, 5.1A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,000 |
| IRFR9020PBF | Vishay | Power Field-Effect Transistor, 9.9A I(D), 50V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,000 |
| IRFRC20TRLPBF | Vishay | Power Field-Effect Transistor, 2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,000 |
| IRFU220PBF | Vishay | Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 3,000 |
| IRLR2905ZTRLPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,000 |
| IRLU3715PBF | IR | Power Field-Effect Transistor, 30A I(D), 20V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 3,000 |
| MDF13N50BTH | Magnachip | Power Field-Effect Transistor | 3,000 |
| SI1024X-T1-E3 | Vishay | Power Field-Effect Transistor, 0.485A I(D), N-Channel, Metal-oxide Semiconductor FET | 3,000 |
| SI1473DH-T1-GE3 | Vishay | Power Field-Effect Transistor, 2.8A I(D), 30V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI2318CDS-T1-GE3 | Vishay | Power Field-Effect Transistor, 5.6A I(D), 40V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | 3,000 |
| SI5418DU-T1-GE3 | Siliconix | Power Field-Effect Transistor, 11.6A I(D), 30V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI5419DU-T1-GE3 | Vishay | Power Field-Effect Transistor, 12A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI5479DU-T1-E3 | Siliconix | Power Field-Effect Transistor, 16A I(D), 12V, 0.021ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI5504BDC-T1-GE3 | Vishay | Power Field-Effect Transistor, 4A I(D), 30V, 0.065ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI5515CDC-T1-GE3 | Siliconix | Power Field-Effect Transistor, 4A I(D), 20V, 0.036ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI5517DU-T1-GE3 | Vishay | Power Field-Effect Transistor, 6A I(D), 20V, 0.039ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI5902BDC-T1-GE3 | Siliconix | Power Field-Effect Transistor, 4A I(D), 30V, 0.065ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI7102DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 25A I(D), 12V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI7106DN-T1-E3 | Vishay | Power Field-Effect Transistor, 12.5A I(D), 20V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI7115DN-T1-E3 | Vishay | Power Field-Effect Transistor, 2.3A I(D), 150V, 0.295ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI7149DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 23.7A I(D), 30V, 0.0052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI7220DN-T1-GE3 | Vishay | Power Field-Effect Transistor | 3,000 |
| SI7288DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 10A I(D), 40V, 0.019ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI7308DN-T1-E3 | Vishay | Power Field-Effect Transistor, 5.4A I(D), 60V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI7308DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 5.4A I(D), 60V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI7619DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 10.5A I(D), 30V, 0.021ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI7629DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 35A I(D), 20V, 0.0046ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI7658ADP-T1-GE3 | Vishay | Power Field-Effect Transistor, 36A I(D), 30V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI7682DP-T1-E3 | Vishay | Power Field-Effect Transistor, 17.5A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI7794DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 60A I(D), 30V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI7892BDP-T1-GE3 | Vishay | Power Field-Effect Transistor, 15A I(D), 30V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI7905DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 5A I(D), 40V, 0.06ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI8429DB-T1-E1 | Vishay | Power Field-Effect Transistor, 7.8A I(D), 8V, 0.098ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI8483DB-T2-E1 | Vishay | Power Field-Effect Transistor, 16A I(D), 12V, 0.035ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SI8497DB-T2-E1 | Vishay | Power Field-Effect Transistor, 13A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET | 3,000 |
| SIA406DJ-T1-GE3 | Vishay | Power Field-Effect Transistor, 4.5A I(D), 12V, 0.0198ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIA441DJ-T1-GE3 | Vishay | Power Field-Effect Transistor, 12A I(D), 40V, 0.047ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIA462DJ-T1-GE3 | Vishay | Power Field-Effect Transistor, 12A I(D), 30V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIA920DJ-T1-GE3 | Vishay | Power Field-Effect Transistor, 4.5A I(D), 8V, 0.027ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIB408DK-T1-GE3 | Vishay | Power Field-Effect Transistor, 6A I(D), 30V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIB414DK-T1-E3 | Vishay | Power Field-Effect Transistor, 9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,000 |
| SIB417AEDK-T1-GE3 | Vishay | Power Field-Effect Transistor, 9A I(D), 8V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIB457EDK-T1-GE3 | Vishay | Power Field-Effect Transistor, 20V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIE818DF-T1-E3 | Vishay | Power Field-Effect Transistor, 16A I(D), 75V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIE818DF-T1-GE3 | Vishay | Power Field-Effect Transistor, 16A I(D), 75V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIE832DF-T1-GE3 | Vishay | Power Field-Effect Transistor, 23.6A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIHD12N50E-GE3 | Vishay | Power Field-Effect Transistor, 10.5A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 3,000 |
| SIHD1K4N60E-GE3 | Vishay | Power Field-Effect Transistor, 4.2A I(D), 600V, 1.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,000 |
| SIHD3N50D-GE3 | Vishay | Power Field-Effect Transistor, 3A I(D), 500V, 3.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,000 |
| SIHD7N60E-GE3 | Vishay | Power Field-Effect Transistor, 7A I(D), 609V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 3,000 |
| SIHFR1N60A-GE3 | Vishay | Power Field-Effect Transistor, 1.4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,000 |
| SIHH14N65E-T1-GE3 | Vishay | Power Field-Effect Transistor, 15A I(D), 650V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIHJ10N60E-T1-GE3 | Vishay | Power Field-Effect Transistor, 10A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIHJ8N60E-T1-GE3 | Vishay | Power Field-Effect Transistor | 3,000 |
| SIHLR024TRL-GE3 | Vishay | Power Field-Effect Transistor, 14A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,000 |
| SIHLU014-GE3 | Vishay | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 3,000 |
| SIR158DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 40A I(D), 30V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIR164DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 33.3A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIR402DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 20.7A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIR418DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 23.5A I(D), 40V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIR424DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 23.4A I(D), 20V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIR466DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 28A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIR616DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 20.2A I(D), 200V, 0.0535ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIR642DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 60A I(D), 40V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIR800DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 35.4A I(D), 20V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIRA00DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 100A I(D), 30V, 0.001ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIRA04DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 40A I(D), 30V, 0.00215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIRA06DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 40A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIS402DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 35A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIS430DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 21.5A I(D), 25V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIS438DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 14.3A I(D), 20V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIS454DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 35A I(D), 20V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SISS23DN-T1-GE3 | Vishay | Power Field-Effect Transistor | 3,000 |
| SIZ904DT-T1-GE3 | Vishay | Power Field-Effect Transistor, 12A I(D), 30V, 0.024ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SIZ920DT-T1-GE3 | Vishay | Power Field-Effect Transistor, 40A I(D), 30V, 0.0071ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SQ3419EV-T1_GE3 | Vishay | Power Field-Effect Transistor, 6.9A I(D), 40V, 0.058ohm, 1-Element, P-Channel, Silicon, Trench Mosfet FET, MO-193AA | 3,000 |
| SQ3461EV-T1_GE3 | Vishay | Power Field-Effect Transistor, 8A I(D), 12V, 0.025ohm, 1-Element, P-Channel, Silicon, Trench Mosfet FET, MO-193AA | 3,000 |
| SQ7414AENW-T1_GE3 | Vishay | Power Field-Effect Transistor, 18A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET | 3,000 |
| SQA403EJ-T1_GE3 | Vishay | Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SQJ204EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 20A I(D), 12V, 0.0083ohm, 2-Element, N-Channel, Silicon, Trench Mosfet FET | 3,000 |
| SQJ409EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 60A I(D), 40V, 0.007ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SQJ412EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 32A I(D), 40V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SQJ415EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 30A I(D), 40V, 0.014ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SQJ463EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 11A I(D), 40V, 0.01ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SQJ464EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 32A I(D), 60V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SQJ486EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 30A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SQJ872EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 24.5A I(D), 150V, 0.0355ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SQJ940EP-T1-GE3 | Vishay | Power Field-Effect Transistor, 15A I(D), 40V, 0.016ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SQJ942EP-T1-GE3 | Vishay | Power Field-Effect Transistor, 15A I(D), 40V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SQJA37EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 30A I(D), 30V, 0.0092ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SQJA76EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 75A I(D), 40V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SQJB70EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 11.3A I(D), 100V, 0.095ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| SQS944ENW-T1_GE3 | Vishay | Power Field-Effect Transistor, 6A I(D), 40V, 0.034ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| STB23NM50N | ST Micro | Power Field-Effect Transistor, 17A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 3,000 |
| STB3NK60ZT4 | ST Micro | Power Field-Effect Transistor, 2.4A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| STF2HNK60Z | ST Micro | Power Field-Effect Transistor, 2A I(D), 600V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,000 |
| STF5N52K3 | ST Micro | Power Field-Effect Transistor, 4.4A I(D), 525V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,000 |
| STF5N62K3 | ST Micro | Power Field-Effect Transistor, 4.2A I(D), 620V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,000 |
| STFI16N65M2 | ST Micro | Power Field-Effect Transistor | 3,000 |
| STI4N62K3 | ST Micro | Power Field-Effect Transistor | 3,000 |
| STL10N3LLH5 | ST Micro | Power Field-Effect Transistor, 9A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| STL11N3LLH6 | ST Micro | Power Field-Effect Transistor, 11A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| STL12N65M2 | ST Micro | Power Field-Effect Transistor | 3,000 |
| STL13NM60N | ST Micro | Power Field-Effect Transistor, 1.9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| STL19N60DM2 | ST Micro | Power Field-Effect Transistor | 3,000 |
| STL24N60M6 | ST Micro | Power Field-Effect Transistor | 3,000 |
| STL40C30H3LL | ST Micro | Power Field-Effect Transistor | 3,000 |
| STL40N10F7 | ST Micro | Power Field-Effect Transistor | 3,000 |
| STL45N10F7AG | ST Micro | Power Field-Effect Transistor, 18A I(D), 100V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| STL45P3LLH6 | ST Micro | Power Field-Effect Transistor | 3,000 |
| STL60N10F7 | ST Micro | Power Field-Effect Transistor | 3,000 |
| STL62P3LLH6 | ST Micro | Power Field-Effect Transistor, 62A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET | 3,000 |
| STL6P3LLH6 | ST Micro | Power Field-Effect Transistor, 6A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET | 3,000 |
| STL7N10F7 | ST Micro | Power Field-Effect Transistor | 3,000 |
| STL9P2UH7 | ST Micro | Power Field-Effect Transistor, 9A I(D), 20V, 0.085ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| STP62NS04Z | ST Micro | Power Field-Effect Transistor, 62A I(D), 33V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 3,000 |
| STU2N105K5 | ST Micro | Power Field-Effect Transistor, 1.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,000 |
| STU3N65M6 | ST Micro | Power Field-Effect Transistor, 3.5A I(D), 650V, 1.5ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-251 | 3,000 |
| STU4N62K3 | ST Micro | Power Field-Effect Transistor, 3.8A I(D), 620V, 1.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 3,000 |
| STU5N65M6 | ST Micro | Power Field-Effect Transistor | 3,000 |
| STU7N105K5 | ST Micro | Power Field-Effect Transistor, 4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,000 |
| TPCA8011-H(TE12L,Q) | Toshiba | Power Field-Effect Transistor, 40A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 3,000 |
| TSM6968SDCARV | Taiwan Semi | Power Field-Effect Transistor, 6.5A I(D), 20V, 0.022ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 3,000 |
| AUIRLR024ZTRL | Infineon | Power Field-Effect Transistor, 16A I(D), 55V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,999 |
| STF8NM60ND | ST Micro | Power Field-Effect Transistor, 7A I(D), 600V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,997 |
| NTDV20P06LT4G-VF01 | Onsemi | Power Field-Effect Transistor, 15.5A I(D), 60V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,996 |
| AO4614B | Alpha Omega | Power Field-Effect Transistor, 6A I(D), 40V, 0.03ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,995 |
| STP5NB40 | ST Micro | Power Field-Effect Transistor, 4.7A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,990 |
| IRFP440PBF | Vishay | Power Field-Effect Transistor, 8.8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 2,975 |
| IPI600N25N3G | Infineon | Power Field-Effect Transistor, 25A I(D), 250V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 2,969 |
| BSP373NH6327 | Infineon | Power Field-Effect Transistor, 1.8A I(D), 100V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,965 |
| BTS132 | Infineon | Power Field-Effect Transistor, 24A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,965 |
| IRFB4620PBF | Infineon | Power Field-Effect Transistor, 25A I(D), 200V, 0.0725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,945 |
| IRLMS6802TR | IR | Power Field-Effect Transistor, 5.6A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,945 |
| BSC014N06NS | Infineon | Power Field-Effect Transistor, 240A I(D), 60V, 0.00145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,940 |
| IRL7833PBF | Infineon | Power Field-Effect Transistor, 75A I(D), 30V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,940 |
| BSP372NH6327 | Infineon | Power Field-Effect Transistor, 1.8A I(D), 100V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,935 |
| IRLU024N | Infineon | Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 2,925 |
| STD7NM80-1 | ST Micro | Power Field-Effect Transistor, 6.5A I(D), 800V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 2,925 |
| STU4N80K5 | ST Micro | Power Field-Effect Transistor, 3A I(D), 800V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 2,925 |
| SISA18ADN-T1-GE3 | Vishay | Power Field-Effect Transistor, 38.3A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,915 |
| SPD03N60C3 | Infineon | Power Field-Effect Transistor, 3.2A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,915 |
| AO4421 | Alpha Omega | Power Field-Effect Transistor, 6.2A I(D), 60V, 0.04ohm, 1-Element, P-Channel, Silicon, Trench Mosfet FET | 2,900 |
| IRF820ALPBF | Vishay | Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 2,900 |
| IRFBC30APBF | Vishay | Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,900 |
| IRL3715ZPBF | IR | Power Field-Effect Transistor, 50A I(D), 20V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,900 |
| IRLMS2002TR | IR | Power Field-Effect Transistor, 6.5A I(D), 20V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,900 |
| SIHB12N60E-GE3 | Vishay | Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 2,900 |
| SIHP15N60E-GE3 | Vishay | Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,900 |
| STF40NF06 | ST Micro | Power Field-Effect Transistor, 23A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,900 |
| DMP2035U-7 | Diodes | Power Field-Effect Transistor, 4.9A I(D), 20V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,895 |
| TP2504N8 | Supertex | Power Field-Effect Transistor, 1.2A I(D), 40V, 2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA | 2,895 |
| TJ9A10M3 | Toshiba | Power Field-Effect Transistor, 9A I(D), 100V, 0.17ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,890 |
| IRLML5203TR | IR | Power Field-Effect Transistor, 3A I(D), 30V, 0.098ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,885 |
| BF998RW | Vishay | Power Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,875 |
| BF543B-GS08 | Vishay | Power Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,850 |
| IRF620SPBF | Vishay | Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 2,850 |
| IRFR224 | Siliconix | Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,850 |
| IRFU3711ZPBF | IR | Power Field-Effect Transistor, 30A I(D), 20V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 2,850 |
| IRLML2502TR | IR | Power Field-Effect Transistor, 4.2A I(D), 20V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,850 |
| PHX14NQ20T | NXP | Power Field-Effect Transistor, 7.6A I(D), 200V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,850 |
| SIHD6N65E-GE3 | Vishay | Power Field-Effect Transistor, 7A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,850 |
| STD1NK60-1 | ST Micro | Power Field-Effect Transistor, 1A I(D), 600V, 8.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 2,850 |
| IRF9910TRPBF | IR | Power Field-Effect Transistor, 12A I(D), N-Channel, Metal-oxide Semiconductor FET | 2,849 |
| BUZ272 | Infineon | Power Field-Effect Transistor, 15A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,846 |
| IRFU420 | Fairchild Semi | Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 2,829 |
| IRFR9N20DPBF | Infineon | Power Field-Effect Transistor, 9.4A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,825 |
| IRFU320 | Siliconix | Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 2,825 |
| STP9NK50Z | ST Micro | Power Field-Effect Transistor, 7.2A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,818 |
| STF7N65M2 | ST Micro | Power Field-Effect Transistor | 2,801 |
| AUIRF1324S | Infineon | Power Field-Effect Transistor, 195A I(D), 24V, 0.00165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 2,800 |
| IRFH8337TR2PBF | IR | Power Field-Effect Transistor, 12A I(D), 30V, 0.0128ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,800 |
| IRFI9630GPBF | Vishay | Power Field-Effect Transistor, 4.3A I(D), 150V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,800 |
| IRFIB6N60APBF | Vishay | Power Field-Effect Transistor, 5.5A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,800 |
| STS17NF3LL | ST Micro | Power Field-Effect Transistor, 17A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,800 |
| BSP295L6327 | Infineon | Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,798 |
| IRFPC50 | Vishay | Power Field-Effect Transistor, 11A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 2,795 |
| IRL540NSTRLPBF | Infineon | Power Field-Effect Transistor, 36A I(D), 100V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,785 |
| BSP324H6327 | Infineon | Power Field-Effect Transistor, 0.17A I(D), 400V, 25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,770 |
| FDP2532 | Onsemi | Power Field-Effect Transistor, 8A I(D), 150V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,756 |
| SQ7414EN-T1 | Vishay | Power Field-Effect Transistor, 5.6A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,755 |
| AUIRLR3705Z | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,750 |
| SI5499DC-T1-E3 | Siliconix | Power Field-Effect Transistor, 2.1A I(D), 8V, 0.036ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,750 |
| STP25N06 | ST Micro | Power Field-Effect Transistor, 25A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,744 |
| SMD10P06L | Siliconix | Power Field-Effect Transistor, 2A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,732 |
| IRFR9220TRPBF | Vishay | Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,727 |
| IRLR3410TRPBF | Infineon | Power Field-Effect Transistor, 17A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,725 |
| FCA47N60 | Onsemi | Power Field-Effect Transistor, 47A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,722 |
| HUF75321D3ST | Onsemi | Power Field-Effect Transistor, 20A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,720 |
| IRFP350 | Fairchild Semi | Power Field-Effect Transistor, 16A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 2,719 |
| RF1S9540SM9A | Intersil | Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 2,718 |
| IRFP31N50LPBF | Vishay | Power Field-Effect Transistor, 31A I(D), 500V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 2,707 |
| IPD600N25N3G | Infineon | Power Field-Effect Transistor, 25A I(D), 250V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,705 |
| SI9945AEY-T1 | Vishay | Power Field-Effect Transistor, 3.7A I(D), N-Channel, Metal-oxide Semiconductor FET | 2,704 |
| AOTF22N50 | Alpha Omega | Power Field-Effect Transistor, 22A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,700 |
| HUF76629D3S | Fairchild Semi | Power Field-Effect Transistor, 20A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,700 |
| IRF710PBF | Vishay | Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,700 |
| IRLIZ44N | Infineon | Power Field-Effect Transistor, 30A I(D), 55V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,700 |
| SIHFR9220-GE3 | Vishay | Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,700 |
| SSM6J505NU,LF(T | Toshiba | Power Field-Effect Transistor, 12A I(D), 12V, 0.016ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,700 |
| SI3445DV | Vishay | Power Field-Effect Transistor, 5.6A I(D), 8V, 0.042ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,695 |
| BUZ215 | Siemens | Power Field-Effect Transistor, 5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,694 |
| BSC031N06NS3G | Infineon | Power Field-Effect Transistor, 22A I(D), 60V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,685 |
| BSP135L6327 | Infineon | Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,685 |
| BUZ344 | Infineon | Power Field-Effect Transistor, 50A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA | 2,672 |
| DMP3056LSD-13 | Diodes | Power Field-Effect Transistor, 6.9A I(D), 30V, 0.045ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,650 |
| IRL530PBF | IR | Power Field-Effect Transistor, 15A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,650 |
| DMN3150L-7 | Diodes | Power Field-Effect Transistor, 3.8A I(D), 30V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,646 |
| IRFR014 | Vishay | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,645 |
| SIA429DJT-T1-GE3 | Vishay | Power Field-Effect Transistor, 12A I(D), 20V, 0.0205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,645 |
| STB60NF06T4 | ST Micro | Power Field-Effect Transistor, 60A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,640 |
| IRFU9210PBF | IR | Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 2,625 |
| IRF7413TRPBF | Infineon | Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 2,618 |
| IRF710SPBF | Vishay | Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 2,600 |
| IRF9Z14PBF | Vishay | Power Field-Effect Transistor, 6.7A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,600 |
| SI7370DP-T1-E3 | Vishay | Power Field-Effect Transistor, 9.6A I(D), 60V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,600 |
| STF100N6F7 | ST Micro | Power Field-Effect Transistor | 2,600 |
| STL13N60M6 | ST Micro | Power Field-Effect Transistor | 2,600 |
| BTS115A-E3045A | Infineon | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | 2,595 |
| BUK437-500B | NXP | Power Field-Effect Transistor, 10A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,593 |
| BSP108 | NXP | Power Field-Effect Transistor, 0.5A I(D), 80V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,590 |
| STP14NF12FP | ST Micro | Power Field-Effect Transistor, 8.5A I(D), 120V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,589 |
| BUK9K25-40E | NXP | Power Field-Effect Transistor | 2,585 |
| MTB75N05HDT4 | Onsemi | Power Field-Effect Transistor, 75A I(D), 50V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,580 |
| IRF7319TRPBF | Infineon | Power Field-Effect Transistor, 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 2,560 |
| SI7370DP-T1 | Vishay | Power Field-Effect Transistor, 9.6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,560 |
| AUIRF5305TRL | IR | Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,550 |
| IRLU3714ZPBF | IR | Power Field-Effect Transistor, 30A I(D), 20V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 2,550 |
| BSP296E6327 | Infineon | Power Field-Effect Transistor, 1A I(D), 100V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,545 |
| IRF7904PBF | IR | Power Field-Effect Transistor, 11A I(D), 30V, 10.8ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,545 |
| RS1L180GNTB | Rohm | Power Field-Effect Transistor, 18A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,540 |
| ZXMP6A17KTC | Diodes | Power Field-Effect Transistor, 4.4A I(D), 60V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,535 |
| STD17N06 | ST Micro | Power Field-Effect Transistor, 17A I(D), 60V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,525 |
| AO4404 | Alpha Omega | Power Field-Effect Transistor, 8.5A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,515 |
| SUM60N04-12LT-E3 | Vishay | Power Field-Effect Transistor, 60A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,507 |
| IRL630SPBF | Vishay | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 2,505 |
| AO8808A | Alpha Omega | Power Field-Effect Transistor, 7.9A I(D), 20V, 0.014ohm, 2-Element, N-Channel, Silicon, Trench Mosfet FET | 2,500 |
| AOD468 | Alpha Omega | Power Field-Effect Transistor, 11.5A I(D), 300V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| AOD476 | Alpha Omega | Power Field-Effect Transistor, 25A I(D), 20V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| AOD4S60 | Alpha Omega | Power Field-Effect Transistor, 4A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| AOD7S65 | Alpha Omega | Power Field-Effect Transistor, 7A I(D), 650V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| BSO211P | Infineon | Power Field-Effect Transistor, 4.7A I(D), 20V, 0.067ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| BTS129 | Infineon | Power Field-Effect Transistor, 27A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,500 |
| BUK9219-55A | Nexperia | Power Field-Effect Transistor, 55A I(D), 55V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| DMP4051LK3-13 | Diodes | Power Field-Effect Transistor, 7.2A I(D), 40V, 0.051ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,500 |
| FDD3N50NZTM | Onsemi | Power Field-Effect Transistor, 2.5A I(D), 500V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| FDD4N60NZ | Onsemi | Power Field-Effect Transistor, 3.4A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,500 |
| FDD5N50NZTM | Onsemi | Power Field-Effect Transistor, 4A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| FDD6612A | Onsemi | Power Field-Effect Transistor, 9.5A I(D), 30V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| FDD7N60NZTM | Onsemi | Power Field-Effect Transistor, 5.5A I(D), 600V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,500 |
| FDD8453LZ | Onsemi | Power Field-Effect Transistor, 50A I(D), 40V, 0.0106ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,500 |
| FDD86113LZ | Onsemi | Power Field-Effect Transistor, 4.2A I(D), 100V, 0.104ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| FDS6994S | Onsemi | Power Field-Effect Transistor, 6.9A I(D), 30V, 0.021ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| FDS7764A | Fairchild Semi | Power Field-Effect Transistor, 15A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| FDS89161LZ | Onsemi | Power Field-Effect Transistor, 2.7A I(D), 100V, 0.105ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| FQD1N80TM | Onsemi | Power Field-Effect Transistor, 1A I(D), 800V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| FQD5N50TM | Fairchild Semi | Power Field-Effect Transistor, 3.5A I(D), 500V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| HAT2168H-EL-E | Renesas | Power Field-Effect Transistor, 30A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| IPD65R400CE | Infineon | Power Field-Effect Transistor, 15.1A I(D), 650V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| IRFBC30ASPBF | Vishay | Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| IRFR024ATM | Fairchild Semi | Power Field-Effect Transistor, 15A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,500 |
| IRLZ34PBF | Vishay | Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,500 |
| IRLZ44PBF | Vishay | Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,500 |
| MTD3055ELT4 | Motorola | Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| NDD04N50ZT4G | Onsemi | Power Field-Effect Transistor, 3A I(D), 500V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| NDS8961 | Fairchild Semi | Power Field-Effect Transistor, 3.1A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| NTDV3055L104T4G | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.104ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| PHD27NQ10T | NXP | Power Field-Effect Transistor, 28A I(D), 100V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| RDD022N60TL | Rohm | Power Field-Effect Transistor, 2A I(D), 600V, 6.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| RJK0328DPB-01-J0 | Renesas | Power Field-Effect Transistor, 60A I(D), 30V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| RJK0656DPB-00-J5 | Renesas | Power Field-Effect Transistor, 40A I(D), 60V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| RJK1054DPB-00-J5 | Renesas | Power Field-Effect Transistor, 20A I(D), 100V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| RRH140P03GZETB | Rohm | Power Field-Effect Transistor, 14A I(D), 30V, 0.007ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| SI4304DY-T1-E3 | Vishay | Power Field-Effect Transistor, 24A I(D), 30V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| SI4420BDY-T1-E3 | Vishay | Power Field-Effect Transistor, 9.5A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| SI4561DY-T1-E3 | Vishay | Power Field-Effect Transistor, 7.2A I(D), N-Channel and P-Channel, Metal-oxide Semiconductor FET | 2,500 |
| SI4684DY-T1-E3 | Siliconix | Power Field-Effect Transistor, 16A I(D), 30V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| SI4936DY-T1-E3 | Vishay | Power Field-Effect Transistor, 5.8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,500 |
| SI9933BDY-T1-E3 | Vishay | Power Field-Effect Transistor, 3.6A I(D), 20V, 0.06ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| SIR866DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 39A I(D), 20V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| SPD14N06S2-80 | Infineon | Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| SQ4850EY-T1_GE3 | Vishay | Power Field-Effect Transistor, 12A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| STB80NF03L-04-1 | ST Micro | Power Field-Effect Transistor, 80A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 2,500 |
| STD10LN80K5 | ST Micro | Power Field-Effect Transistor | 2,500 |
| STD10N60M2 | ST Micro | Power Field-Effect Transistor, 7.5A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| STD10NF10T4 | ST Micro | Power Field-Effect Transistor, 13A I(D), 100V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| STD10NM65N | ST Micro | Power Field-Effect Transistor, 9A I(D), 650V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,500 |
| STD120N4F6 | ST Micro | Power Field-Effect Transistor, 80A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| STD15N60M2-EP | ST Micro | Power Field-Effect Transistor | 2,500 |
| STD15N65M5 | ST Micro | Power Field-Effect Transistor, 11A I(D), 650V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| STD16NF25 | ST Micro | Power Field-Effect Transistor, 13A I(D), 250V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| STD17NF25 | ST Micro | Power Field-Effect Transistor, 17A I(D), 250V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| STD18NF03L | ST Micro | Power Field-Effect Transistor, 17A I(D), 30V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| STD26P3LLH6 | ST Micro | Power Field-Effect Transistor, 12A I(D), 30V, 0.045ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| STD30NF03LT4 | ST Micro | Power Field-Effect Transistor, 30A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| STD3N65M6 | ST Micro | Power Field-Effect Transistor, 3.5A I(D), 650V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| STD47N10F7AG | ST Micro | Power Field-Effect Transistor | 2,500 |
| STD4NS25T4 | ST Micro | Power Field-Effect Transistor, 4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| STD5N65M6 | ST Micro | Power Field-Effect Transistor | 2,500 |
| STD7N60M2 | ST Micro | Power Field-Effect Transistor, 5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,500 |
| STD8NM60N | ST Micro | Power Field-Effect Transistor, 7A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| STLD125N4F6AG | ST Micro | Power Field-Effect Transistor, 101A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| STLD200N4F6AG | ST Micro | Power Field-Effect Transistor, 120A I(D), 40V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| STP11NM60 | ST Micro | Power Field-Effect Transistor, 11A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,500 |
| STS10P3LLH6 | ST Micro | Power Field-Effect Transistor, 10A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET | 2,500 |
| STS11NF30L | ST Micro | Power Field-Effect Transistor, 11A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| STS3DPF20V | ST Micro | Power Field-Effect Transistor, 3A I(D), 20V, 0.135ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| STS4NF100 | ST Micro | Power Field-Effect Transistor, 4A I(D), 100V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| TSM4944DCSRL | Taiwan Semi | Power Field-Effect Transistor, 12.2A I(D), 30V, 0.0132ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| TSM7401CSRL | Taiwan Semi | Power Field-Effect Transistor, 8A I(D), 20V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| TSM900N06CPROG | Taiwan Semi | Power Field-Effect Transistor | 2,500 |
| UPA2780GR | Renesas | Power Field-Effect Transistor, 14A I(D), 30V, 0.0137ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| ZXMS6004DN8-13 | Diodes | Power Field-Effect Transistor, 60V, 0.6ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,500 |
| IRF5803TRPBF | IR | Power Field-Effect Transistor, 3.4A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET | 2,499 |
| SIZ728DT-T1-GE3 | Vishay | Power Field-Effect Transistor, 16A I(D), 25V, 0.0077ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,498 |
| BSC057N08NS3G | Infineon | Power Field-Effect Transistor, 16A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,495 |
| IRFTS9342TRPBF | IR | Power Field-Effect Transistor, 5.8A I(D), 30V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,495 |
| STD18N06LT4G-VF01 | Onsemi | Power Field-Effect Transistor, 18A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,495 |
| IPB072N15N3G | Infineon | Power Field-Effect Transistor, 100A I(D), 150V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 2,490 |
| IRFB4227PBF | Infineon | Power Field-Effect Transistor, 65A I(D), 200V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,490 |
| DMN10H170SK3-13 | Diodes | Power Field-Effect Transistor, 12A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,480 |
| S886T | Vishay | Power Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,480 |
| STD18NF25 | ST Micro | Power Field-Effect Transistor, 17A I(D), 250V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,480 |
| STU4N52K3 | ST Micro | Power Field-Effect Transistor, 2.5A I(D), 525V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,475 |
| SI4836DY-T1 | Vishay | Power Field-Effect Transistor, 17A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,465 |
| RFD14N05 | Harris | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 2,461 |
| MDD14N25CRH | Magnachip | Power Field-Effect Transistor, 10.2A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,454 |
| BSP297L6327 | Infineon | Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,450 |
| SMP60N03-10L | Siliconix | Power Field-Effect Transistor, 60A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,439 |
| RFD14N05SM | Fairchild Semi | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,435 |
| CSD25401Q3 | TI | Power Field-Effect Transistor, 14A I(D), 20V, 0.0182ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,430 |
| TSM042N03CSRLG | Taiwan Semi | Power Field-Effect Transistor, 30A I(D), 30V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,426 |
| FDS8926A | Fairchild Semi | Power Field-Effect Transistor, 5.5A I(D), 30V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,425 |
| STN1HNK60 | ST Micro | Power Field-Effect Transistor, 0.4A I(D), 600V, 8.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,410 |
| AUIRFR4620 | Infineon | Power Field-Effect Transistor, 24A I(D), 200V, 0.078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,400 |
| HUF75307D3ST | Fairchild Semi | Power Field-Effect Transistor, 15A I(D), 55V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,400 |
| IRF9510STRRPBF | Vishay | Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 2,400 |
| IRFBF20STRLPBF | Vishay | Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,400 |
| IRFH5306TR2PBF | IR | Power Field-Effect Transistor, 15A I(D), 30V, 0.0133ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,400 |
| IRL3202PBF | IR | Power Field-Effect Transistor, 48A I(D), 20V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,400 |
| NP15P06SLG-E1-AY | Renesas | Power Field-Effect Transistor, 15A I(D), 60V, 0.095ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,400 |
| NVB072N65S3 | Onsemi | Power Field-Effect Transistor, 44A I(D), 650V, 0.072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 2,400 |
| PHP20NQ20T | Nexperia | Power Field-Effect Transistor, 20A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,400 |
| RFD14N05LSM9A | Harris | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,400 |
| SIRA01DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 60A I(D), 30V, 0.0049ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,400 |
| SQM120N04-1M9_GE3 | Vishay | Power Field-Effect Transistor, 120A I(D), 40V, 0.0019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 2,400 |
| STD3NK80Z-1 | ST Micro | Power Field-Effect Transistor, 2.5A I(D), 800V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 2,400 |
| STP80NF06 | ST Micro | Power Field-Effect Transistor, 80A I(D), 60V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,400 |
| IRF6617TR1 | IR | Power Field-Effect Transistor, 14A I(D), 30V, 0.0081ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET | 2,396 |
| IRF7404TRPBF | Infineon | Power Field-Effect Transistor, 5.3A I(D), 20V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 2,395 |
| IRFR9024PBF | Vishay | Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,378 |
| FDMS86101DC | Fairchild Semi | Power Field-Effect Transistor, 14.5A I(D), 100V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | 2,376 |
| IRF7834PBF | Infineon | Power Field-Effect Transistor, 19A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 2,375 |
| SPD30P06P | Infineon | Power Field-Effect Transistor, 30A I(D), 60V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,365 |
| IXTT6N120 | Littelfuse | Power Field-Effect Transistor, 6A I(D), 1200V, 2.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA | 2,358 |
| IRFH8325TR2PBF | IR | Power Field-Effect Transistor, 21A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,350 |
| IRFI520GPBF | Vishay | Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,350 |
| STD5N20T4 | ST Micro | Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,350 |
| IRF7603TR | IR | Power Field-Effect Transistor, 5.6A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,348 |
| TK13A60D(Q) | Toshiba | Power Field-Effect Transistor, 13A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,348 |
| BUK7628-100A | Nexperia | Power Field-Effect Transistor, 47A I(D), 100V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,345 |
| STP7NK80Z | ST Micro | Power Field-Effect Transistor, 5.2A I(D), 800V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,340 |
| IPT059N15N3 | Infineon | Power Field-Effect Transistor, 155A I(D), 150V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,325 |
| FQD5N60CTM | Onsemi | Power Field-Effect Transistor, 2.8A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,323 |
| ZVN4306A | Diodes | Power Field-Effect Transistor, 1.1A I(D), 60V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,310 |
| SI7460DP-T1-E3 | Vishay | Power Field-Effect Transistor, 11A I(D), 60V, 0.0096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,307 |
| IRFP064PBF | Vishay | Power Field-Effect Transistor, 70A I(D), 60V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 2,300 |
| IRF7306TR | IR | Power Field-Effect Transistor, 3A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,295 |
| IRFL014TR | Vishay | Power Field-Effect Transistor, 2.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 2,295 |
| BSP135H6327 | Infineon | Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,290 |
| NDS9407 | Onsemi | Power Field-Effect Transistor | 2,290 |
| STP3NK90Z | ST Micro | Power Field-Effect Transistor, 3A I(D), 900V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,284 |
| HUF75309D3S | Harris | Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,283 |
| SI4214DDY-T1-GE3 | Vishay | Power Field-Effect Transistor, 8.5A I(D), 30V, 0.0195ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 2,280 |
| NTD5865NLT4G | Onsemi | Power Field-Effect Transistor, 40A I(D), 60V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,270 |
| SQS405ENW-T1_GE3 | Vishay | Power Field-Effect Transistor, 16A I(D), 12V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,261 |
| IRF840A | Vishay | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,250 |
| IRFU9220PBF | Vishay | Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 2,250 |
| IRLU7807ZPBF | IR | Power Field-Effect Transistor, 30A I(D), 30V, 0.0138ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 2,250 |
| STD7NK40ZT4 | ST Micro | Power Field-Effect Transistor, 5.4A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,250 |
| SPD07N60C3 | Infineon | Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,245 |
| BUK964R2-55B | Nexperia | Power Field-Effect Transistor, 75A I(D), 50V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,244 |
| FQU8P10TU | Onsemi | Power Field-Effect Transistor, 6.6A I(D), 100V, 0.53ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 2,240 |
| IRLL2703 | Infineon | Power Field-Effect Transistor, 5.5A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 2,240 |
| SI7848DP-T1-E3 | Vishay | Power Field-Effect Transistor, 10.4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,235 |
| IRFZ44ZPBF | IR | Power Field-Effect Transistor, 51A I(D), 55V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,230 |
| NDS9933A | Fairchild Semi | Power Field-Effect Transistor, 2.8A I(D), 20V, 0.14ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,230 |
| HAF2001-90 | Renesas | Power Field-Effect Transistor, 20A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,227 |
| IRFR4104TR | IR-HiRel | Power Field-Effect Transistor, 42A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,225 |
| FQA13N80 | Fairchild Semi | Power Field-Effect Transistor, 12.6A I(D), 800V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,220 |
| NDT2955 | Onsemi | Power Field-Effect Transistor, 2.5A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,220 |
| AUIRF3205ZS | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 2,210 |
| HUFA75645S3S | Onsemi | Power Field-Effect Transistor, 75A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 2,200 |
| IRFP254A | Fairchild Semi | Power Field-Effect Transistor, 25A I(D), 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,200 |
| NTD5802NT4G | Onsemi | Power Field-Effect Transistor, 16.4A I(D), 40V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,200 |
| RFD3055LESM9A | Onsemi | Power Field-Effect Transistor, 11A I(D), 60V, 0.107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,193 |
| MMDF3N03HDR2 | Onsemi | Power Field-Effect Transistor, 4.1A I(D), 30V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,185 |
| NDS9933 | National | Power Field-Effect Transistor, 3.2A I(D), 20V, 0.11ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,180 |
| SI9407AEY-T1-E3 | Vishay | Power Field-Effect Transistor, 3.5A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET | 2,180 |
| IRFU420APBF | Vishay | Power Field-Effect Transistor, 3.3A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 2,175 |
| STD5NM60-1 | ST Micro | Power Field-Effect Transistor, 5A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 2,175 |
| SI9948AEY | Siliconix | Power Field-Effect Transistor, 2.6A I(D), 60V, 0.17ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,165 |
| BUZ32H | Infineon | Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,150 |
| IRFP244PBF | Vishay | Power Field-Effect Transistor, 15A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 2,150 |
| IRF730 | Vishay | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,149 |
| MDD2N60RH | Magnachip | Power Field-Effect Transistor, 1.9A I(D), 600V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,148 |
| BUZ73 | Infineon | Power Field-Effect Transistor, 7A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,140 |
| SI4840DY-T1 | Vishay | Power Field-Effect Transistor, 10A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,140 |
| IRF7201TR | IR-HiRel | Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 2,135 |
| IRFR420TR | Vishay | Power Field-Effect Transistor, 2.4A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,135 |
| FDZ206P | Fairchild Semi | Power Field-Effect Transistor, 13A I(D), 20V, 0.0095ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,130 |
| IRF7413 | Infineon | Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 2,127 |
| MMDF2C02HDR2 | Motorola | Power Field-Effect Transistor, 3.8A I(D), 20V, 0.09ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,104 |
| AUIRFR3607 | Infineon | Power Field-Effect Transistor, 56A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,100 |
| AUIRLR3114Z | Infineon | Power Field-Effect Transistor, 42A I(D), 40V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,100 |
| HAT2164H | Renesas | Power Field-Effect Transistor, 60A I(D), 30V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,100 |
| IRFB812PBF | Infineon | Power Field-Effect Transistor, 3.6A I(D), 500V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,100 |
| STS15N4LLF3 | ST Micro | Power Field-Effect Transistor, 15A I(D), 40V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,095 |
| MDD3N50GRH | Magnachip | Power Field-Effect Transistor | 2,094 |
| IRF620 | Fairchild Semi | Power Field-Effect Transistor, 5A I(D), 200V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,093 |
| NTD3055-094T4G | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,080 |
| AUIRFS8407-7TRL | IR | Power Field-Effect Transistor, 240A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,075 |
| IRFR15N20DPBF | Infineon | Power Field-Effect Transistor, 17A I(D), 200V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,075 |
| BF998RAW | Vishay | Power Field-Effect Transistor, 0.03A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,070 |
| RFD16N05 | Fairchild Semi | Power Field-Effect Transistor, 16A I(D), 50V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 2,070 |
| FDC637BNZ | Onsemi | Power Field-Effect Transistor, 6.2A I(D), 20V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,060 |
| IRF7220-TRPBF | IR | Power Field-Effect Transistor, 14A I(D), 14V, 0.012ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 2,055 |
| MTD4N20T4 | Motorola | Power Field-Effect Transistor, 4A I(D), 200V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,055 |
| SQD19P06-60L_GE3 | Vishay | Power Field-Effect Transistor, 20A I(D), 60V, 0.055ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,055 |
| STB11NK50ZT4 | ST Micro | Power Field-Effect Transistor, 10A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,054 |
| IRL3714PBF | IR | Power Field-Effect Transistor, 36A I(D), 20V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,050 |
| STW8NK80Z | ST Micro | Power Field-Effect Transistor, 6.2A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 2,040 |
| IRF5210S | Infineon | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 2,025 |
| SISA40DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 162A I(D), 20V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,025 |
| BTS247ZE-3062A | Infineon | Power Field-Effect Transistor, 33A I(D), 55V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,020 |
| FDMS2672 | Fairchild Semi | Power Field-Effect Transistor, 3.7A I(D), 200V, 0.156ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,002 |
| AOT480L | Alpha Omega | Power Field-Effect Transistor, 180A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,000 |
| BSP89E6327 | Infineon | Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,000 |
| BUK95180-100A | Nexperia | Power Field-Effect Transistor, 11A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| BUZ111SE3045 | Infineon | Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 2,000 |
| FDPF16N50T | Fairchild Semi | Power Field-Effect Transistor, 16A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| FDPF5N50T | Onsemi | Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| FDPF5N60NZ | Onsemi | Power Field-Effect Transistor, 4.5A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| FQPF7N10 | Fairchild Semi | Power Field-Effect Transistor, 5.5A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,000 |
| IPA032N06N3G | Infineon | Power Field-Effect Transistor, 84A I(D), 60V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| IPB160N04S4-H1 | Infineon | Power Field-Effect Transistor, 160A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 | 2,000 |
| IPB160N04S4L-H1 | Infineon | Power Field-Effect Transistor, 160A I(D), 40V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 | 2,000 |
| IPB180P04P4L-02 | Infineon | Power Field-Effect Transistor, 180A I(D), 40V, 0.0039ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 | 2,000 |
| IRF614PBF | Vishay | Power Field-Effect Transistor, 2.7A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| IRF630FP | ST Micro | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| IRFBF20PBF | Vishay | Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| IRFH5303TR2PBF | IR | Power Field-Effect Transistor, 23A I(D), 30V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,000 |
| IRFR310TRPBF | Vishay | Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,000 |
| IRFR3518TRPBF | Infineon | Power Field-Effect Transistor, 38A I(D), 80V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,000 |
| IRFR3711TRPBF | Infineon | Power Field-Effect Transistor, 30A I(D), 20V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,000 |
| IRFR420ATF | Fairchild Semi | Power Field-Effect Transistor, 2.3A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,000 |
| IRFR430ATR | IR | Power Field-Effect Transistor, 5A I(D), 500V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,000 |
| IRFR430ATRPBF | Vishay | Power Field-Effect Transistor, 5A I(D), 500V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,000 |
| IRLR3103TRPBF | Infineon | Power Field-Effect Transistor, 20A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,000 |
| IRLR8259TRPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 25V, 0.0087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,000 |
| IRLU024PBF | Vishay | Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 2,000 |
| PHP30NQ15T | Nexperia | Power Field-Effect Transistor, 29A I(D), 150V, 0.063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,000 |
| RF1S70N06 | Fairchild Semi | Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 2,000 |
| SI7818DN-T1-E3 | Vishay | Power Field-Effect Transistor, 2.2A I(D), 150V, 0.135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,000 |
| SIHF30N60E-GE3 | Vishay | Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| SIHFR9020TR-GE3 | Vishay | Power Field-Effect Transistor, 9.9A I(D), 50V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,000 |
| SPD28N05L | Infineon | Power Field-Effect Transistor, 28A I(D), 55V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,000 |
| SPP80N03S2L-04 | Infineon | Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| SQD25N06-22L_GE3 | Vishay | Power Field-Effect Transistor, 25A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,000 |
| SQD25N15-52_GE3 | Vishay | Power Field-Effect Transistor, 25A I(D), 150V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,000 |
| SQD40061EL_GE3 | Vishay | Power Field-Effect Transistor, 100A I(D), 40V, 0.0051ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 2,000 |
| STF10N60DM2 | ST Micro | Power Field-Effect Transistor | 2,000 |
| STF12N50M2 | ST Micro | Power Field-Effect Transistor, 10A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,000 |
| STF12NM50ND | ST Micro | Power Field-Effect Transistor, 11A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| STF16N65M2 | ST Micro | Power Field-Effect Transistor, 11A I(D), 650V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| STF18NM60N | ST Micro | Power Field-Effect Transistor, 13A I(D), 600V, 0.285ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| STF28NM50N | ST Micro | Power Field-Effect Transistor, 21A I(D), 500V, 0.158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| STF2N80K5 | ST Micro | Power Field-Effect Transistor, 2A I(D), 800V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| STF5N105K5 | ST Micro | Power Field-Effect Transistor, 3A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,000 |
| STF5N65M6 | ST Micro | Power Field-Effect Transistor | 2,000 |
| STF7N52DK3 | ST Micro | Power Field-Effect Transistor, 6A I(D), 525V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| STFU9N65M2 | ST Micro | Power Field-Effect Transistor | 2,000 |
| STH6N95K5-2 | ST Micro | Power Field-Effect Transistor, 6A I(D), 950V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,000 |
| STI18N60M2 | ST Micro | Power Field-Effect Transistor, 13A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,000 |
| STI6N62K3 | ST Micro | Power Field-Effect Transistor, 5.5A I(D), 620V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 2,000 |
| STP10NK60Z | ST Micro | Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| STP11N65M2 | ST Micro | Power Field-Effect Transistor | 2,000 |
| STP12N50M2 | ST Micro | Power Field-Effect Transistor, 10A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 2,000 |
| STP16NS25 | ST Micro | Power Field-Effect Transistor, 16A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| STP5NK60Z | ST Micro | Power Field-Effect Transistor, 5A I(D), 600V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| STP7N52K3 | ST Micro | Power Field-Effect Transistor, 6.3A I(D), 525V, 0.98ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 2,000 |
| STQ1NK60ZR-AP | ST Micro | Power Field-Effect Transistor, 0.3A I(D), 600V, 15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | 2,000 |
| SUD23N06-31-GE3 | Vishay | Power Field-Effect Transistor, 9.1A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 2,000 |
| SUM110P04-05-E3 | Vishay | Power Field-Effect Transistor, 39A I(D), 40V, 0.005ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 2,000 |
| TK11P65W | Toshiba | Power Field-Effect Transistor, 11.1A I(D), 650V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 2,000 |
| FCD380N60E | Onsemi | Power Field-Effect Transistor, 10.2A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,998 |
| BSP89L6327 | Infineon | Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,995 |
| STP2N60 | ST Micro | Power Field-Effect Transistor, 2.9A I(D), 600V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,995 |
| BUK482-100A | NXP | Power Field-Effect Transistor, 1.8A I(D), 100V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,993 |
| STS7NF60L | ST Micro | Power Field-Effect Transistor, 7.5A I(D), 60V, 0.0215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,990 |
| SUB40N06-25L | Vishay | Power Field-Effect Transistor, 40A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,990 |
| BSP295E6327 | Infineon | Power Field-Effect Transistor, 1.8A I(D), 50V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,985 |
| IPB70N10S3L12ATMA1 | Infineon | Power Field-Effect Transistor, 70A I(D), 100V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,985 |
| IRL520NSTRLPBF | Infineon | Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,983 |
| IRF5801TRPBF | Infineon | Power Field-Effect Transistor, 0.6A I(D), 200V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA | 1,980 |
| STP5N105K5 | ST Micro | Power Field-Effect Transistor, 3A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,980 |
| FDMS86255 | Onsemi | Power Field-Effect Transistor, 10A I(D), 150V, 0.0124ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | 1,977 |
| HUF75307D3S | Fairchild Semi | Power Field-Effect Transistor, 15A I(D), 55V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,975 |
| IRFU9120PBF | Vishay | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 1,975 |
| FDB3632 | Onsemi | Power Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,967 |
| AUIRFR1018E | Infineon | Power Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,950 |
| IRFB61N15DPBF | Infineon | Power Field-Effect Transistor, 60A I(D), 150V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,950 |
| IRFP22N60KPBF | Vishay | Power Field-Effect Transistor, 22A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 1,950 |
| IRFR9N20D | Infineon | Power Field-Effect Transistor, 9.4A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,950 |
| STD35NF3LLT4 | ST Micro | Power Field-Effect Transistor, 35A I(D), 30V, 0.0215ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,945 |
| IRFR024NTR | IR | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,935 |
| 2SJ130L-E | Renesas | Power Field-Effect Transistor, 1A I(D), 300V, 8.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,932 |
| MDD3N40RH | Magnachip | Power Field-Effect Transistor | 1,929 |
| SISS27DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 50A I(D), 30V, 0.0056ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,918 |
| RFP22N10 | Fairchild Semi | Power Field-Effect Transistor, 22A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,915 |
| NTGS3433T1G | Onsemi | Power Field-Effect Transistor, 2.35A I(D), 12V, 0.075ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,905 |
| AUIRF3808S | Infineon | Power Field-Effect Transistor, 106A I(D), 75V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,900 |
| BTS115A | Infineon | Power Field-Effect Transistor, 15.5A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,900 |
| FQP2N80 | Onsemi | Power Field-Effect Transistor, 2.4A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,900 |
| FQPF13N06L | Onsemi | Power Field-Effect Transistor, 10A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,900 |
| IRLIZ14GPBF | Vishay | Power Field-Effect Transistor, 8A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,900 |
| SIHF30N60E-E3 | Vishay | Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,900 |
| SIHP6N40D-GE3 | Vishay | Power Field-Effect Transistor, 6A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,900 |
| SIHP8N50D-GE3 | Vishay | Power Field-Effect Transistor, 8.7A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,900 |
| STB100N6F7 | ST Micro | Power Field-Effect Transistor, 100A I(D), 60V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,900 |
| STP11NB40 | ST Micro | Power Field-Effect Transistor, 10.7A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,900 |
| STP15NK50Z | ST Micro | Power Field-Effect Transistor, 14A I(D), 500V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,900 |
| IRLU8726PBF | IR | Power Field-Effect Transistor, 86A I(D), 30V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 1,885 |
| RJK0654DPB-00-J5 | Renesas | Power Field-Effect Transistor, 30A I(D), 60V, 0.0083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,885 |
| NTD3055L104T4G | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.104ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,880 |
| SPD10N10 | Infineon | Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,870 |
| BUZ101S | Infineon | Power Field-Effect Transistor, 22A I(D), 55V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,866 |
| IRF3205ZSTRLPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,865 |
| BSP603S2L | Infineon | Power Field-Effect Transistor, 5.2A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,860 |
| HUF75617D3ST | Fairchild Semi | Power Field-Effect Transistor, 16A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,860 |
| HUFA75321S3ST | Fairchild Semi | Power Field-Effect Transistor, 35A I(D), 55V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,860 |
| IRFR3711ZPBF | IR | Power Field-Effect Transistor, 30A I(D), 20V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,860 |
| NTHS2101PT1G | Onsemi | Power Field-Effect Transistor, 5.4A I(D), 8V, 0.025ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,855 |
| SI4559ADY-T1-GE3 | Vishay | Power Field-Effect Transistor, 4.3A I(D), 60V, 0.058ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,855 |
| AUIRF1405ZS | Infineon | Power Field-Effect Transistor, 150A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,850 |
| IPD09N03LAG | Infineon | Power Field-Effect Transistor, 50A I(D), 25V, 0.0148ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,850 |
| STF13N60M2 | ST Micro | Power Field-Effect Transistor | 1,850 |
| IRLR120NTRPBF | Infineon | Power Field-Effect Transistor, 10A I(D), 100V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,849 |
| BSP170P | Infineon | Power Field-Effect Transistor, 1.9A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,835 |
| SQ2301ES-T1_GE3 | Vishay | Power Field-Effect Transistor, 3.9A I(D), 20V, 0.12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | 1,835 |
| SQS840EN-T1_GE3 | Vishay | Power Field-Effect Transistor | 1,835 |
| FDS6984S | Fairchild Semi | Power Field-Effect Transistor, 8.5A I(D), 30V, 0.019ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,830 |
| IRFH5215TRPBF | Infineon | Power Field-Effect Transistor, 5A I(D), 150V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,815 |
| AON6246 | Alpha Omega | Power Field-Effect Transistor, 80A I(D), 60V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,810 |
| IRFR120NTRPBF | Infineon | Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,810 |
| SUD50N03-07 | Siliconix | Power Field-Effect Transistor, 20A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1,810 |
| IRLMS6702TRPBF | Infineon | Power Field-Effect Transistor, 2.4A I(D), 20V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,808 |
| AUIRFS3006 | Infineon | Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,800 |
| IRF830ASPBF | Vishay | Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,800 |
| STF4N62K3 | ST Micro | Power Field-Effect Transistor, 3.8A I(D), 620V, 1.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,800 |
| IRF7452PBF | Infineon | Power Field-Effect Transistor, 4.5A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,790 |
| BSP316E6327 | Infineon | Power Field-Effect Transistor, 0.65A I(D), 100V, 2.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,780 |
| ZVN4424GTA | Diodes | Power Field-Effect Transistor, 0.5A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,778 |
| IRFR13N20DTRPBF | Infineon | Power Field-Effect Transistor, 13A I(D), 200V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,770 |
| NTD2955 | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,765 |
| STP14NF10 | ST Micro | Power Field-Effect Transistor, 15A I(D), 100V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,761 |
| AO4822A | Alpha Omega | Power Field-Effect Transistor, 8A I(D), N-Channel, Metal-oxide Semiconductor FET | 1,760 |
| IRF7811WTR | IR | Power Field-Effect Transistor, 14A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,755 |
| FDMS039N08B | Onsemi | Power Field-Effect Transistor, 19.4A I(D), 80V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | 1,750 |
| STF10N105K5 | ST Micro | Power Field-Effect Transistor, 6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,750 |
| IRFR1N60APBF | Vishay | Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,749 |
| SI7684DP-T1-E3 | Vishay | Power Field-Effect Transistor, 17.5A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,744 |
| BUK657-400B | NXP | Power Field-Effect Transistor, 11A I(D), 400V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,740 |
| FQP4N90C | Fairchild Semi | Power Field-Effect Transistor, 4A I(D), 900V, 4.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,733 |
| AUIRFR2405 | Infineon | Power Field-Effect Transistor, 30A I(D), 55V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,725 |
| TK4A60DA | Toshiba | Power Field-Effect Transistor, 3.5A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,722 |
| IRFS4321PBF | Infineon | Power Field-Effect Transistor, 75A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,720 |
| IRLML2244TRPBF | Infineon | Power Field-Effect Transistor, 4.3A I(D), 20V, 0.054ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | 1,720 |
| IRFR1205TRPBF | Infineon | Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,715 |
| IRLR220ATF | Fairchild Semi | Power Field-Effect Transistor, 4.6A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1,715 |
| NVMYS5D3N04CTWG | Onsemi | Power Field-Effect Transistor, 71A I(D), 40V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,710 |
| AUIRF1010EZS | Infineon | Power Field-Effect Transistor, 75A I(D), 60V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,700 |
| BUZ71L | Siemens | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,700 |
| HS8K11 | Rohm | Power Field-Effect Transistor | 1,700 |
| IRFI9Z34GPBF | Vishay | Power Field-Effect Transistor, 12A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,700 |
| SP8K1TB | Rohm | Power Field-Effect Transistor, 5A I(D), 30V, 0.082ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,700 |
| BUK9880-55A | NXP | Power Field-Effect Transistor, 7A I(D), 55V, 0.089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,690 |
| IPD50P04P4L-11 | Infineon | Power Field-Effect Transistor, 50A I(D), 40V, 0.0106ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1,690 |
| IXTA32N20T | IXYS | Power Field-Effect Transistor, 32A I(D), 200V, 0.072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,690 |
| NDS9945 | Onsemi | Power Field-Effect Transistor, 3.5A I(D), 60V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,690 |
| VN2450N8-G | Supertex | Power Field-Effect Transistor, 0.25A I(D), 500V, 13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA | 1,690 |
| SI4966DY-T1-E3 | Vishay | Power Field-Effect Transistor, 7.1A I(D), 20V, 0.025ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,685 |
| IRF3711SPBF | IR | Power Field-Effect Transistor, 110A I(D), 20V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,683 |
| SPB80N06S2L-11 | Infineon | Power Field-Effect Transistor, 80A I(D), 55V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,677 |
| DMP3130L-7 | Diodes | Power Field-Effect Transistor, 3.5A I(D), 30V, 0.077ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,670 |
| IRFL214TRPBF | Vishay | Power Field-Effect Transistor | 1,670 |
| STB23NM60ND | ST Micro | Power Field-Effect Transistor, 19.5A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,660 |
| PSMN018-80YS | Nexperia | Power Field-Effect Transistor, 45A I(D), 80V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 | 1,655 |
| 2SK1602 | Toshiba | Power Field-Effect Transistor, 2.8A I(D), 800V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,650 |
| AUIRFU8405 | Infineon | Power Field-Effect Transistor, 100A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,650 |
| IRF630SPBF | Vishay | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,650 |
| IRFI9530G | Vishay | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.03ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,650 |
| IRFI9634G | Vishay | Power Field-Effect Transistor, 4.1A I(D), 250V, 1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,650 |
| IRFS634B | Fairchild Semi | Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,650 |
| IRFS7730TRLPBF | Infineon | Power Field-Effect Transistor, 195A I(D), 75V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,650 |
| STP20N20 | ST Micro | Power Field-Effect Transistor, 18A I(D), 200V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,650 |
| RJK0454DPB-00-J5 | Renesas | Power Field-Effect Transistor, 40A I(D), 40V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,630 |
| STD1NA60 | ST Micro | Power Field-Effect Transistor, 1.6A I(D), 600V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,629 |
| IRFR9024N | Infineon | Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,628 |
| BUK92150-55A | Nexperia | Power Field-Effect Transistor, 11A I(D), 55V, 0.155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1,625 |
| IRFU110 | Fairchild Semi | Power Field-Effect Transistor, 4.7A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 1,625 |
| IRFU3303PBF | IR | Power Field-Effect Transistor, 20A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 1,625 |
| MTD9N10ET4 | Onsemi | Power Field-Effect Transistor, 9A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,625 |
| IPD053N06N3G | Infineon | Power Field-Effect Transistor, 90A I(D), 60V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,615 |
| IRFR4105PBF | Infineon | Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,602 |
| AUIRFS3207Z | Infineon | Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,600 |
| BTS115 | Siemens | Power Field-Effect Transistor, 12.5A I(D), 50V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,600 |
| FDD6685 | Onsemi | Power Field-Effect Transistor, 11A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1,600 |
| IRF510STRLPBF | Siliconix | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,600 |
| IRF9530NSTRLPBF | Infineon | Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,600 |
| IRFB9N65APBF | Vishay | Power Field-Effect Transistor, 8.5A I(D), 650V, 0.93ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,600 |
| IRFBC40STRLPBF | Vishay | Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,600 |
| IRFH5301TR2PBF | IR | Power Field-Effect Transistor, 35A I(D), 30V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,600 |
| IRFH5304TR2PBF | IR | Power Field-Effect Transistor, 22A I(D), 30V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,600 |
| IRFH7110TR2PBF | IR | Power Field-Effect Transistor, 11A I(D), 100V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,600 |
| IRFH7914TR2PBF | IR | Power Field-Effect Transistor, 35A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,600 |
| IRFH8330TR2PBF | IR | Power Field-Effect Transistor, 17A I(D), 30V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,600 |
| IRFH8334TR2PBF | IR | Power Field-Effect Transistor, 14A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,600 |
| IRFHM830TR2PBF | IR | Power Field-Effect Transistor, 21A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,600 |
| IRL3705ZSTRLPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,600 |
| IRLZ44ZSTRRPBF | IR | Power Field-Effect Transistor, 51A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,600 |
| MDD5N50RH | Magnachip | Power Field-Effect Transistor, 4.4A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1,600 |
| NP36P04KDG-E1-AY | Renesas | Power Field-Effect Transistor, 36A I(D), 40V, 0.0235ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,600 |
| SPD30N06S2L-13 | Infineon | Power Field-Effect Transistor, 30A I(D), 55V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1,600 |
| STP3NK60Z | ST Micro | Power Field-Effect Transistor, 2.4A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,600 |
| SUM50P10-42-E3 | Vishay | Power Field-Effect Transistor, 36A I(D), 100V, 0.042ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,600 |
| 2SJ244JYTL | Renesas Tech | Power Field-Effect Transistor, 2A I(D), 12V, 0.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,591 |
| 2SK2666 | Shindengen | Power Field-Effect Transistor, 3A I(D), 900V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,581 |
| BUK7610-100B | Nexperia | Power Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,580 |
| IRFR210PBF | Vishay | Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,575 |
| IRFR9120PBF | Vishay | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,575 |
| NDD05N50Z-1G | Onsemi | Power Field-Effect Transistor, 4.7A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,575 |
| BUK9620-55A | Nexperia | Power Field-Effect Transistor, 54A I(D), 55V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,570 |
| IRF7201PBF | Infineon | Power Field-Effect Transistor, 7.3A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,570 |
| IRF7307TRPBF | Infineon | Power Field-Effect Transistor, 5.2A I(D), 20V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,558 |
| DMTH4011SPD-13 | Diodes | Power Field-Effect Transistor, 42A I(D), 40V, 0.015ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,555 |
| BUK7614-55 | NXP | Power Field-Effect Transistor, 68A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,550 |
| IRFR9020 | Samsung | Power Field-Effect Transistor, 9.9A I(D), 50V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,550 |
| MDD5N40RH | Magnachip | Power Field-Effect Transistor | 1,547 |
| BUK9875-100A | Nexperia | Power Field-Effect Transistor, 7A I(D), 100V, 0.084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,545 |
| IRF3205STRLPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,539 |
| IRLL3303TR | IR-HiRel | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 1,535 |
| FDD8444 | Onsemi | Power Field-Effect Transistor, 155A I(D), 40V, 5.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,530 |
| SI7846DP-T1 | Vishay | Power Field-Effect Transistor, 4A I(D), 150V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,530 |
| BSP297H6327 | Infineon | Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,520 |
| IRF7456PBF | Infineon | Power Field-Effect Transistor, 16A I(D), 20V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,510 |
| HUF76609D3 | Fairchild Semi | Power Field-Effect Transistor, 10A I(D), 100V, 0.168ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 1,500 |
| IRF3708SPBF | IR | Power Field-Effect Transistor, 62A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,500 |
| IRF510SPBF | Vishay | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,500 |
| IRFR3704ZPBF | Infineon | Power Field-Effect Transistor, 30A I(D), 20V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,500 |
| PSMN1R7-30YL | Nexperia | Power Field-Effect Transistor, 100A I(D), 30V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 | 1,500 |
| SIHG30N60E-GE3 | Vishay | Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 1,500 |
| SIHP25N40D-GE3 | Vishay | Power Field-Effect Transistor, 25A I(D), 400V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,500 |
| STFI15N60M2-EP | ST Micro | Power Field-Effect Transistor, 11A I(D), 600V, 0.378ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-281 | 1,500 |
| STP8N80K5 | ST Micro | Power Field-Effect Transistor, 6A I(D), 800V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,500 |
| STU7NM60N | ST Micro | Power Field-Effect Transistor, 5A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 1,500 |
| TK40E06N1 | Toshiba | Power Field-Effect Transistor, 60A I(D), 60V, 0.0104ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,500 |
| BTS131E3045A | Infineon | Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | 1,490 |
| SUD50P04-15-E3 | Vishay | Power Field-Effect Transistor, 50A I(D), 40V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1,490 |
| 2N6764 | Infineon | Power Field-Effect Transistor, 38A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204 | 1,485 |
| IRFR2905ZTR | IR | Power Field-Effect Transistor, 42A I(D), 55V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,485 |
| IRLR3715ZPBF | Infineon | Power Field-Effect Transistor, 30A I(D), 20V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,484 |
| AUIRFR2307Z | Infineon | Power Field-Effect Transistor, 42A I(D), 75V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,475 |
| HUF76409D3ST | Fairchild Semi | Power Field-Effect Transistor, 18A I(D), 60V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,475 |
| AUIRF7313Q | IR | Power Field-Effect Transistor, 6.9A I(D), N-Channel, Metal-oxide Semiconductor FET | 1,470 |
| IRF4905STRLPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,470 |
| IPB107N20N3G | Infineon | Power Field-Effect Transistor, 88A I(D), 200V, 0.0107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,465 |
| AUIRLU2905 | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,450 |
| BUK453-60A | NXP | Power Field-Effect Transistor, 22A I(D), 60V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,450 |
| FDP6030BL | Onsemi | Power Field-Effect Transistor, 40A I(D), 30V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,450 |
| FQD13N10TM | Fairchild Semi | Power Field-Effect Transistor, 10A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1,450 |
| FQPF630 | Onsemi | Power Field-Effect Transistor, 6.3A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,450 |
| IRF530SPBF | Vishay | Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,450 |
| IRF9610SPBF | Vishay | Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,450 |
| IRFIZ34GPBF | Vishay | Power Field-Effect Transistor, 20A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,450 |
| IRFP048PBF | Vishay | Power Field-Effect Transistor, 70A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 1,450 |
| STP65NF06 | ST Micro | Power Field-Effect Transistor, 60A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,450 |
| BUZ102SLE3045A | Infineon | Power Field-Effect Transistor, 47A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,445 |
| IRLR3410 | Infineon | Power Field-Effect Transistor, 17A I(D), 100V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,427 |
| HUF76107D3ST | Harris | Power Field-Effect Transistor, 20A I(D), 30V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,425 |
| STU13NM60N | ST Micro | Power Field-Effect Transistor, 11A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 1,425 |
| SPD08P06P | Infineon | Power Field-Effect Transistor, 8.83A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,416 |
| IRFU210 | Siliconix | Power Field-Effect Transistor, 2.6A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 1,414 |
| IRFR9110 | IR | Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,406 |
| RFD16N03L | Harris | Power Field-Effect Transistor, 16A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 1,405 |
| IRF9333TRPBF | IR | Power Field-Effect Transistor, 9.2A I(D), 30V, 0.0194ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,402 |
| BTS115AE3045 | Infineon | Power Field-Effect Transistor, 15.5A I(D), 50V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,400 |
| HUF75332P3 | Onsemi | Power Field-Effect Transistor, 60A I(D), 55V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,400 |
| IRF1503SPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,400 |
| IRFI820GPBF | Vishay | Power Field-Effect Transistor, 2.1A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,400 |
| RFP45N06 | Fairchild Semi | Power Field-Effect Transistor, 45A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,400 |
| SIHB22N60E-GE3 | Vishay | Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,400 |
| SIHP22N60E-GE3 | Vishay | Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,400 |
| STB32N65M5 | ST Micro | Power Field-Effect Transistor, 24A I(D), 650V, 0.119ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,400 |
| FDC6036P | Fairchild Semi | Power Field-Effect Transistor, 5A I(D), 20V, 0.044ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,395 |
| IRFR024NPBF | Infineon | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,380 |
| FQP45N15V2 | Onsemi | Power Field-Effect Transistor, 45A I(D), 150V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,375 |
| SI7601DN-T1-GE3 | Siliconix | Power Field-Effect Transistor, 11.5A I(D), 20V, 0.0192ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,372 |
| IRLMS6802TRPBF | Infineon | Power Field-Effect Transistor, 5.6A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,365 |
| SIR872DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 53.7A I(D), 150V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,365 |
| STB18NF25 | ST Micro | Power Field-Effect Transistor, 17A I(D), 250V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,360 |
| BSP317E6327 | Infineon | Power Field-Effect Transistor, 0.37A I(D), 200V, 6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,355 |
| AUIRFR120Z | Infineon | Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,350 |
| AUIRFS4010-7P | Infineon | Power Field-Effect Transistor, 190A I(D), 100V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,350 |
| IRF1405ZSPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,350 |
| IRFR320PBF | Vishay | Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,350 |
| IRLR024PBF | Vishay | Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,350 |
| NTD85N02R | Onsemi | Power Field-Effect Transistor, 85A I(D), 24V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,350 |
| STD4NB40 | ST Micro | Power Field-Effect Transistor, 4A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,350 |
| IRF3709SPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,340 |
| IRLML6346TRPBF | Infineon | Power Field-Effect Transistor, 3.4A I(D), 30V, 0.063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | 1,340 |
| SMD30N03-30L | Siliconix | Power Field-Effect Transistor, 6A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1,335 |
| IRF7304QPBF | Infineon | Power Field-Effect Transistor, 4.3A I(D), 20V, 0.09ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,330 |
| IRF7421D1PBF | IR | Power Field-Effect Transistor, 5.8A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,330 |
| FQB5N50CTM | Onsemi | Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,325 |
| NTD20P06LT4G | Onsemi | Power Field-Effect Transistor, 15.5A I(D), 60V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,320 |
| SPD13N05L | Infineon | Power Field-Effect Transistor, 12.5A I(D), 55V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1,315 |
| BUK7508-55A | Nexperia | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,312 |
| STD3NK90ZT4 | ST Micro | Power Field-Effect Transistor, 3A I(D), 900V, 4.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,304 |
| 2SK3758 | Toshiba | Power Field-Effect Transistor, 5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,300 |
| SMP25N05-45L | Siliconix | Power Field-Effect Transistor, 25A I(D), 50V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,300 |
| DMG4468LK3-13 | Diodes | Power Field-Effect Transistor, 9.7A I(D), 30V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,290 |
| BSP129L6327 | Infineon | Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,285 |
| IRF7421D1TRPBF | IR | Power Field-Effect Transistor, 5.8A I(D), 30V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,285 |
| BST78 | NXP | Power Field-Effect Transistor, 0.75A I(D), 450V, 14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-126 | 1,283 |
| BSP315PH6327 | Infineon | Power Field-Effect Transistor, 1.17A I(D), 60V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,280 |
| STD7NB20T4 | ST Micro | Power Field-Effect Transistor, 7A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,279 |
| AUIRFR48Z | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,275 |
| HUF75829D3S | Fairchild Semi | Power Field-Effect Transistor, 18A I(D), 150V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,275 |
| IRF6645TR1PBF | IR | Power Field-Effect Transistor, 5.7A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,275 |
| IRLU3717PBF | IR | Power Field-Effect Transistor, 30A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 1,275 |
| IPP80CN10NG | Infineon | Power Field-Effect Transistor, 13A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,266 |
| FQU20N06LTU | Onsemi | Power Field-Effect Transistor, 17.2A I(D), 60V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 1,260 |
| NDS9956A | Fairchild Semi | Power Field-Effect Transistor, 3.7A I(D), 30V, 0.08ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,255 |
| IRFZ44V | Infineon | Power Field-Effect Transistor, 55A I(D), 60V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,250 |
| MTD3055VL | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,250 |
| 2SK3760 | Toshiba | Power Field-Effect Transistor, 3.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,245 |
| BSZ019N03LS | Infineon | Power Field-Effect Transistor, 22A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,245 |
| IRF2903ZSPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,244 |
| BUK9535-55 | NXP | Power Field-Effect Transistor, 34A I(D), 55V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,243 |
| SPB20N60C3 | Infineon | Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,241 |
| IRF644S | IR | Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,240 |
| STW14NK50Z | ST Micro | Power Field-Effect Transistor, 14A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 1,240 |
| BUZ10L | Siemens | Power Field-Effect Transistor, 23A I(D), 50V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,238 |
| IRFS4115TRLPBF | Infineon | Power Field-Effect Transistor, 99A I(D), 150V, 0.0121ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,235 |
| BUZ71 | Infineon | Power Field-Effect Transistor, 12A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,228 |
| SUD45P03-10-E3 | Vishay | Power Field-Effect Transistor, 15A I(D), 30V, 0.018ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1,227 |
| IRFP448PBF | IR | Power Field-Effect Transistor, 11A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 1,225 |
| IRFR2407TRPBF | IR | Power Field-Effect Transistor, 30A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,223 |
| STP9NK90Z | ST Micro | Power Field-Effect Transistor, 8A I(D), 900V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,223 |
| SIR401DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 50A I(D), 20V, 0.0032ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,220 |
| IRFB7446PBF | Infineon | Power Field-Effect Transistor, 120A I(D), 40V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,219 |
| IRF8513PBF | IR | Power Field-Effect Transistor, 8A I(D), 30V, 0.0155ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,215 |
| SUD50N06-07L-E3 | Vishay | Power Field-Effect Transistor, 50A I(D), 60V, 0.0148ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1,215 |
| BSP125L6433 | Infineon | Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,210 |
| IRF7805APBF | IR | Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,210 |
| BSC057N08NS3GATMA1 | Infineon | Power Field-Effect Transistor, 16A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,205 |
| BTS121A | Infineon | Power Field-Effect Transistor, 22A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,202 |
| AOD4126 | Alpha Omega | Power Field-Effect Transistor, 43A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,200 |
| AUIRFR5505 | Infineon | Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,200 |
| BSP317PH6327 | Infineon | Power Field-Effect Transistor, 0.43A I(D), 250V, 4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,200 |
| IRFH5255TR2PBF | IR | Power Field-Effect Transistor, 15A I(D), 25V, 0.0109ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,200 |
| IRFR9210PBF | Vishay | Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,200 |
| IRFU3707ZPBF | Infineon | Power Field-Effect Transistor, 30A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 1,200 |
| IRFZ44RPBF | Vishay | Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,200 |
| IRLH5030TR2PBF | IR | Power Field-Effect Transistor, 13A I(D), 100V, 0.0099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,200 |
| IRLH6224TR2PBF | IR | Power Field-Effect Transistor, 80A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,200 |
| RFP30N06LE | Intersil | Power Field-Effect Transistor, 30A I(D), 60V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,200 |
| SUD23N06-31L-E3 | Vishay | Power Field-Effect Transistor, 23A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1,200 |
| 2SK4018 | Toshiba | Power Field-Effect Transistor, 3A I(D), 100V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,198 |
| IRLU8113PBF | IR | Power Field-Effect Transistor, 30A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 1,198 |
| IRF7404 | Infineon | Power Field-Effect Transistor, 5.4A I(D), 20V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,190 |
| MTB50N06VLT4 | Onsemi | Power Field-Effect Transistor, 42A I(D), 60V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,180 |
| DMS3015SSS-13 | Diodes | Power Field-Effect Transistor, 11A I(D), 30V, 0.0119ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,175 |
| IPB026N06N | Infineon | Power Field-Effect Transistor, 25A I(D), 60V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,164 |
| IRF9Z34NLPBF | Infineon | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 1,150 |
| RFP8N20L | Harris | Power Field-Effect Transistor, 8A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,150 |
| SI7465DP-T1-E3 | Vishay | Power Field-Effect Transistor, 3.2A I(D), 60V, 0.064ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,150 |
| SPD02N50C3 | Infineon | Power Field-Effect Transistor, 1.8A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,150 |
| ZXMP6A17E6TA | Diodes | Power Field-Effect Transistor, 2.3A I(D), 60V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,150 |
| IRLZ44ZPBF | Infineon | Power Field-Effect Transistor, 51A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,149 |
| STP6NB50 | ST Micro | Power Field-Effect Transistor, 5.8A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,148 |
| NTD2955T4 | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,147 |
| IRF7470PBF | Infineon | Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,140 |
| IRF8707GPBF | IR | Power Field-Effect Transistor, 11A I(D), 30V, 0.0119ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,140 |
| IRF7204TR | IR | Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,130 |
| AUIRFR4105Z | Infineon | Power Field-Effect Transistor, 30A I(D), 55V, 0.0245ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,125 |
| HUFA75309D3S | Fairchild Semi | Power Field-Effect Transistor, 19A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,125 |
| IRLU8729PBF | IR | Power Field-Effect Transistor, 50A I(D), 30V, 0.0089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 1,125 |
| STD4NK60Z-1 | ST Micro | Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 1,125 |
| NTMFS5C646NLT1G | Onsemi | Power Field-Effect Transistor, 93A I(D), 60V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,120 |
| BUZ311 | Infineon | Power Field-Effect Transistor, 2.5A I(D), 1000V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA | 1,115 |
| C3M0160120J | Wolfspeed | Power Field-Effect Transistor, 17A I(D), 1200V, 0.208ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-263 | 1,113 |
| SPD31N05 | Infineon | Power Field-Effect Transistor, 31A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,110 |
| IRF7402PBF | IR | Power Field-Effect Transistor, 6.8A I(D), 20V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,105 |
| STP35NF10 | ST Micro | Power Field-Effect Transistor, 40A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,100 |
| TK7P60W | Toshiba | Power Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,100 |
| ZXMN10A08E6TC | Zetex | Power Field-Effect Transistor, 1.5A I(D), 100V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,100 |
| STL130N8F7 | ST Micro | Power Field-Effect Transistor, 130A I(D), 80V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,085 |
| IRFB4615PBF | Infineon | Power Field-Effect Transistor, 35A I(D), 150V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,081 |
| STW18N60M2 | ST Micro | Power Field-Effect Transistor, 13A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 1,080 |
| IRF7341TRPBF | Infineon | Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,065 |
| AUIRLS3034 | Infineon | Power Field-Effect Transistor, 195A I(D), 40V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,060 |
| IRF7401PBF | Infineon | Power Field-Effect Transistor, 8.7A I(D), 20V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,059 |
| DMP2305U-7 | Diodes | Power Field-Effect Transistor, 4.2A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,055 |
| AUIRF1010ZS | Infineon | Power Field-Effect Transistor, 94A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,050 |
| AUIRF1404Z | Infineon | Power Field-Effect Transistor, 160A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,050 |
| AUIRFZ44ZS | Infineon | Power Field-Effect Transistor, 51A I(D), 55V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,050 |
| IRF4104PBF | Infineon | Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,050 |
| IRFR825PBF | Infineon | Power Field-Effect Transistor, 6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,050 |
| IRFU1205PBF | Infineon | Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 1,050 |
| IRFU3504ZPBF | IR | Power Field-Effect Transistor, 42A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 1,050 |
| NP20P06SLG-E1-AY | Renesas | Power Field-Effect Transistor, 20A I(D), 60V, 0.064ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,050 |
| RFD3055LESM | Fairchild Semi | Power Field-Effect Transistor, 11A I(D), 60V, 0.107ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,050 |
| STP60NE06L-16 | ST Micro | Power Field-Effect Transistor, 60A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,050 |
| STU1HN60K3 | ST Micro | Power Field-Effect Transistor | 1,050 |
| IRLZ34NSTRL | IR | Power Field-Effect Transistor, 30A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,045 |
| BUZ72 | Infineon | Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,040 |
| ZVN4310GTA | Diodes | Power Field-Effect Transistor, 1.67A I(D), 100V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,036 |
| RFD14N05LSM | Onsemi | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 1,028 |
| FQPF18N50V2 | Fairchild Semi | Power Field-Effect Transistor, 18A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,025 |
| BTS244Z | Infineon | Power Field-Effect Transistor, 35A I(D), 55V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,022 |
| MTD2N50E | Onsemi | Power Field-Effect Transistor, 2A I(D), 500V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,021 |
| IPC70N04S5L4R2ATMA1 | Infineon | Power Field-Effect Transistor, 70A I(D), 40V, 0.0061ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,020 |
| IPB038N12N3G | Infineon | Power Field-Effect Transistor, 120A I(D), 120V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,017 |
| IRF9Z34SPBF | Vishay | Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,017 |
| STB14NM50N | ST Micro | Power Field-Effect Transistor, 12A I(D), 500V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,017 |
| PHW14N50E | NXP | Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 1,015 |
| STW24N60DM2 | ST Micro | Power Field-Effect Transistor, 18A I(D), 600V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 1,014 |
| FQP6N40C | Onsemi | Power Field-Effect Transistor, 6A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,010 |
| BUK7K6R2-40E | Nexperia | Power Field-Effect Transistor, 40A I(D), 40V, 0.0058ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,009 |
| BUZ331 | Infineon | Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 | 1,005 |
| 2SK1365(F) | Toshiba | Power Field-Effect Transistor, 7A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| 2SK1647STR-E | Renesas | Power Field-Effect Transistor, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| 2SK3563 | Toshiba | Power Field-Effect Transistor, 5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| 2SK3569 | Toshiba | Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| AON7458 | Alpha Omega | Power Field-Effect Transistor, 5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| AOT12N60 | Alpha Omega | Power Field-Effect Transistor, 12A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| AOT13N50 | Alpha Omega | Power Field-Effect Transistor, 13A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| AOT20N25L | Alpha Omega | Power Field-Effect Transistor, 20A I(D), 250V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| AOT284L | Alpha Omega | Power Field-Effect Transistor, 105A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| AOT298L | Alpha Omega | Power Field-Effect Transistor, 58A I(D), 100V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| AOT3N100 | Alpha Omega | Power Field-Effect Transistor, 2.8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| AOT4N60 | Alpha Omega | Power Field-Effect Transistor, 4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| AOT7N70 | Alpha Omega | Power Field-Effect Transistor, 7A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| AOTF10N65 | Alpha Omega | Power Field-Effect Transistor, 10A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| AOTF11N60L | Alpha Omega | Power Field-Effect Transistor, 11A I(D), 600V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| AOTF25S65 | Alpha Omega | Power Field-Effect Transistor, 25A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| AOTF2916L | Alpha Omega | Power Field-Effect Transistor, 17A I(D), 100V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| AOTF9N70 | Alpha Omega | Power Field-Effect Transistor, 9A I(D), 700V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| AOW11S60 | Alpha Omega | Power Field-Effect Transistor, 11A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| AOW14N50 | Alpha Omega | Power Field-Effect Transistor, 14A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| AOW7S60 | Alpha Omega | Power Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 1,000 |
| AUIRF7207Q | Infineon | Power Field-Effect Transistor, 5.4A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 1,000 |
| BSP170PL6327 | Infineon | Power Field-Effect Transistor, 1.9A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| BSP171E6327 | Infineon | Power Field-Effect Transistor, 1.7A I(D), 60V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| BSP296NH6327 | Infineon | Power Field-Effect Transistor, 1.2A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| BUK483-60A | NXP | Power Field-Effect Transistor, 3.2A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| BUZ100SE3045A | Infineon | Power Field-Effect Transistor, 77A I(D), 55V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,000 |
| BUZ41A | NJ Semi | Power Field-Effect Transistor, 4.5A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| BUZ77B | Infineon | Power Field-Effect Transistor, 2.9A I(D), 600V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| FCPF13N60NT | Onsemi | Power Field-Effect Transistor, 13A I(D), 600V, 0.258ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| FCPF600N60Z | Onsemi | Power Field-Effect Transistor, 7.4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| FDPF10N50UT | Onsemi | Power Field-Effect Transistor, 8A I(D), 500V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| FDPF15N65 | Onsemi | Power Field-Effect Transistor, 15A I(D), 650V, 0.44ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| FDPF390N15A | Onsemi | Power Field-Effect Transistor, 15A I(D), 150V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| IPB60R190C6 | Infineon | Power Field-Effect Transistor, 20.2A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,000 |
| IPB80N08S2-07 | Infineon | Power Field-Effect Transistor, 80A I(D), 75V, 0.0071ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,000 |
| IRF644SPBF | Vishay | Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,000 |
| IRF6610TR1PBF | IR | Power Field-Effect Transistor, 15A I(D), 20V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| IRF6665TR1PBF | IR | Power Field-Effect Transistor, 4.2A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| IRF6709S2TR1PBF | IR | Power Field-Effect Transistor, 12A I(D), 25V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| IRF6712STR1PBF | IR | Power Field-Effect Transistor, 17A I(D), 25V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| IRF6713STR1PBF | IR | Power Field-Effect Transistor, 95A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| IRF6714MTR1PBF | IR | Power Field-Effect Transistor, 166A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| IRF6717MTR1PBF | Infineon | Power Field-Effect Transistor, 38A I(D), 25V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| IRF6721STR1PBF | IR | Power Field-Effect Transistor, 60A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| IRF6728MTR1PBF | IR | Power Field-Effect Transistor, 23A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| IRF6775MTR1PBF | Infineon | Power Field-Effect Transistor | 1,000 |
| IRF6795MTR1PBF | Infineon | Power Field-Effect Transistor, 32A I(D), 25V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| IRF6810STR1PBF | IR | Power Field-Effect Transistor, 16A I(D), 25V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| IRF6811STR1PBF | IR | Power Field-Effect Transistor, 19A I(D), 25V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| IRF6893MTR1PBF | IR | Power Field-Effect Transistor, 29A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| IRF6894MTR1PBF | IR | Power Field-Effect Transistor, 33A I(D), 25V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| IRF8302MTR1PBF | IR | Power Field-Effect Transistor, 31A I(D), 30V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| IRF8304MTR1PBF | IR | Power Field-Effect Transistor, 28A I(D), 30V, 0.0022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| IRF8306MTR1PBF | IR | Power Field-Effect Transistor | 1,000 |
| IRF8308MTR1PBF | IR | Power Field-Effect Transistor, 27A I(D), 30V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| IRFB13N50APBF | Siliconix | Power Field-Effect Transistor, 14A I(D), 500V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| IRFP150MPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 1,000 |
| IRFS730B | Fairchild Semi | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| RFP12P08 | Intersil | Power Field-Effect Transistor, 12A I(D), 80V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| SFP9634 | Fairchild Semi | Power Field-Effect Transistor, 5A I(D), 250V, 1.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| SIHA22N60AEL-GE3 | Vishay | Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| SIHA2N80E-GE3 | Vishay | Power Field-Effect Transistor, 2.8A I(D), 800V, 2.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| SIHA30N60AEL-GE3 | Vishay | Power Field-Effect Transistor, 28A I(D), 600V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| SIHB22N60AE-GE3 | Vishay | Power Field-Effect Transistor, 20A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,000 |
| SIHB22N60AEL-GE3 | Vishay | Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,000 |
| SIHB30N60E-GE3 | Vishay | Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,000 |
| SIHF12N60E-GE3 | Vishay | Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| SIHF15N60E-GE3 | Vishay | Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| SIHF22N60E-GE3 | Vishay | Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| SIHP14N60E-GE3 | Vishay | Power Field-Effect Transistor, 13A I(D), 600V, 0.309ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| SIHP15N65E-GE3 | Vishay | Power Field-Effect Transistor, 15A I(D), 650V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| SIHP22N60AEL-GE3 | Vishay | Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| SIHP25N50E-GE3 | Vishay | Power Field-Effect Transistor, 26A I(D), 500V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| SIS110DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 14.2A I(D), 100V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| SPB03N60S5E3045 | Infineon | Power Field-Effect Transistor, 3.2A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,000 |
| SPB08P06P | Infineon | Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,000 |
| STB12NK80ZT4 | ST Micro | Power Field-Effect Transistor, 10.5A I(D), 800V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| STB14NK60ZT4 | ST Micro | Power Field-Effect Transistor, 13.5A I(D), 600V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| STB18N60M6 | ST Micro | Power Field-Effect Transistor, 13A I(D), 600V, 0.128ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-263AB | 1,000 |
| STB33N60DM6 | ST Micro | Power Field-Effect Transistor, 25A I(D), 600V, 0.128ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,000 |
| STB36N60M6 | ST Micro | Power Field-Effect Transistor, 30A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,000 |
| STB6N60M2 | ST Micro | Power Field-Effect Transistor | 1,000 |
| STB70NF3LLT4 | ST Micro | Power Field-Effect Transistor, 70A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,000 |
| STB95N4F3 | ST Micro | Power Field-Effect Transistor, 80A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| STB9NK50ZT4 | ST Micro | Power Field-Effect Transistor, 7.2A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| STF100N10F7 | ST Micro | Power Field-Effect Transistor, 32A I(D), 100V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STF10N62K3 | ST Micro | Power Field-Effect Transistor, 8.4A I(D), 620V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STF10N80K5 | ST Micro | Power Field-Effect Transistor, 9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 1,000 |
| STF110N10F7 | ST Micro | Power Field-Effect Transistor | 1,000 |
| STF11NM50N | ST Micro | Power Field-Effect Transistor, 9A I(D), 500V, 0.47ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STF13N60DM2 | ST Micro | Power Field-Effect Transistor, 11A I(D), 600V, 0.365ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STF15NM65N | ST Micro | Power Field-Effect Transistor, 12A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STF18N60DM2 | ST Micro | Power Field-Effect Transistor | 1,000 |
| STF20N65M5 | ST Micro | Power Field-Effect Transistor | 1,000 |
| STF22NM60N | ST Micro | Power Field-Effect Transistor, 16A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STF24N60M2 | ST Micro | Power Field-Effect Transistor | 1,000 |
| STF27N60M2-EP | ST Micro | Power Field-Effect Transistor, 20A I(D), 600V, 0.163ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STF28NM60ND | ST Micro | Power Field-Effect Transistor, 23A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STF38N65M5 | ST Micro | Power Field-Effect Transistor, 30A I(D), 650V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STF45N10F7 | ST Micro | Power Field-Effect Transistor | 1,000 |
| STF4N90K5 | ST Micro | Power Field-Effect Transistor, 4A I(D), 900V, 2.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STF6N62K3 | ST Micro | Power Field-Effect Transistor, 5.5A I(D), 620V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STF6N90K5 | ST Micro | Power Field-Effect Transistor, 6A I(D), 900V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STFU10N80K5 | ST Micro | Power Field-Effect Transistor | 1,000 |
| STFU16N65M2 | ST Micro | Power Field-Effect Transistor | 1,000 |
| STI20N65M5 | ST Micro | Power Field-Effect Transistor, 18A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 1,000 |
| STI24NM60N | ST Micro | Power Field-Effect Transistor, 17A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 1,000 |
| STI6N90K5 | ST Micro | Power Field-Effect Transistor | 1,000 |
| STP10LN80K5 | ST Micro | Power Field-Effect Transistor | 1,000 |
| STP18N60DM2 | ST Micro | Power Field-Effect Transistor, 12A I(D), 600V, 0.295ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STP18NM60N | ST Micro | Power Field-Effect Transistor, 13A I(D), 600V, 0.285ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STP200NF03 | ST Micro | Power Field-Effect Transistor, 120A I(D), 30V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STP24N65M2 | ST Micro | Power Field-Effect Transistor, 16A I(D), 650V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STP27N60M2-EP | ST Micro | Power Field-Effect Transistor, 20A I(D), 600V, 0.163ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STP4N90K5 | ST Micro | Power Field-Effect Transistor | 1,000 |
| STP6N60M2 | ST Micro | Power Field-Effect Transistor, 4.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STP6N65M2 | ST Micro | Power Field-Effect Transistor | 1,000 |
| STP8N90K5 | ST Micro | Power Field-Effect Transistor, 8A I(D), 900V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STP9N80K5 | ST Micro | Power Field-Effect Transistor, 7A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| STP9NK70Z | ST Micro | Power Field-Effect Transistor, 7.5A I(D), 700V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| SUA70060E-E3 | Vishay | Power Field-Effect Transistor | 1,000 |
| SUD19P06-60-GE3 | Vishay | Power Field-Effect Transistor, 18.3A I(D), 60V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1,000 |
| SUM85N15-19-E3 | Vishay | Power Field-Effect Transistor, 85A I(D), 150V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 1,000 |
| SUP10250E-GE3 | Vishay | Power Field-Effect Transistor, 63A I(D), 250V, 0.0325ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1,000 |
| ZXMN6A11GTA | Diodes | Power Field-Effect Transistor, 4.4A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1,000 |
| AON7210 | Alpha Omega | Power Field-Effect Transistor, 50A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 999 |
| IRF2807STRLPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 998 |
| 2SJ314-01S | Fuji Elec | Power Field-Effect Transistor, 5A I(D), 60V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 995 |
| STB22N60M6 | ST Micro | Power Field-Effect Transistor | 991 |
| 2SK1930 | Toshiba | Power Field-Effect Transistor, 4A I(D), 1000V, 3.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 990 |
| BSP320SH6327 | Infineon | Power Field-Effect Transistor, 2.9A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 990 |
| IRF1404ZSPBF | Infineon | Power Field-Effect Transistor, 180A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 990 |
| SI7882DP-T1-E3 | Vishay | Power Field-Effect Transistor, 13A I(D), 12V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 990 |
| STW19NM50N | ST Micro | Power Field-Effect Transistor, 14A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 990 |
| ZXMP7A17GTA | Diodes | Power Field-Effect Transistor, 3.7A I(D), 70V, 0.16ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 990 |
| IRFR2407 | IR | Power Field-Effect Transistor, 30A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 985 |
| IRLR3110ZTRPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 985 |
| NDS9435 | National | Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 985 |
| ZXMP10A17GTA | Diodes | Power Field-Effect Transistor, 2.4A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 983 |
| BSP105 | NXP | Power Field-Effect Transistor, 0.5A I(D), 60V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 980 |
| FDS4470 | Onsemi | Power Field-Effect Transistor, 12.5A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 980 |
| IPB80R290C3A | Infineon | Power Field-Effect Transistor, 17A I(D), 800V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 980 |
| IRF7665S2TR1PBF | IR | Power Field-Effect Transistor, 4.1A I(D), 100V, 0.062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 980 |
| IRFR3303PBF | Infineon | Power Field-Effect Transistor, 20A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 975 |
| MTD15N06VLT4 | Onsemi | Power Field-Effect Transistor, 15A I(D), 60V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 975 |
| RFD4N06L | Harris | Power Field-Effect Transistor, 4A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 975 |
| IXTN600N04T2 | IXYS | Power Field-Effect Transistor, 600A I(D), 40V, 0.00105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 967 |
| MTP12P10 | Onsemi | Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 967 |
| IPD90N04S4-03 | Infineon | Power Field-Effect Transistor, 90A I(D), 40V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 965 |
| SVD2955T4G | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 965 |
| BUZ80 | Infineon | Power Field-Effect Transistor, 2.6A I(D), 800V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 964 |
| TPCS8208(TE12L) | Toshiba | Power Field-Effect Transistor, 6A I(D), N-Channel, Metal-oxide Semiconductor FET | 960 |
| ZXMP7A17KTC | Diodes | Power Field-Effect Transistor, 3.8A I(D), 70V, 0.16ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 960 |
| PSMNR90-80ASFJ | Nexperia | Power Field-Effect Transistor, 505A I(D), 80V, 0.00122ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-359 | 956 |
| AOT2916L | Alpha Omega | Power Field-Effect Transistor, 23A I(D), 100V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 950 |
| BSP171 | Siemens | Power Field-Effect Transistor, 1.7A I(D), 60V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 950 |
| BUK7515-100A | Nexperia | Power Field-Effect Transistor | 950 |
| FDP10N60ZU | Fairchild Semi | Power Field-Effect Transistor, 9A I(D), 600V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 950 |
| FDP7030BL | Onsemi | Power Field-Effect Transistor, 60A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 950 |
| IRF520N | IR-HiRel | Power Field-Effect Transistor, 9.7A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 950 |
| IRF7809AVTR | IR-HiRel | Power Field-Effect Transistor, 13.3A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 950 |
| IRF9Z24SPBF | Vishay | Power Field-Effect Transistor, 11A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 950 |
| IRFB20N50K | Vishay | Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 950 |
| IRFR024 | Siliconix | Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 950 |
| IRFS4510PBF | Infineon | Power Field-Effect Transistor, 61A I(D), 100V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 950 |
| MTB36N06V | Onsemi | Power Field-Effect Transistor, 32A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 950 |
| SI4420DYPBF | Infineon | Power Field-Effect Transistor, 12.5A I(D), 30V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA | 950 |
| SI4814BDY-E3 | Siliconix | Power Field-Effect Transistor, 10.5A I(D), 30V, 0.018ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 950 |
| SIHF540S-GE3 | Vishay | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 950 |
| SPD18P06P | Infineon | Power Field-Effect Transistor, 18.6A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 950 |
| STF18N60M6 | ST Micro | Power Field-Effect Transistor | 950 |
| STF24N60M6 | ST Micro | Power Field-Effect Transistor | 950 |
| STF35N65DM2 | ST Micro | Power Field-Effect Transistor, 32A I(D), 650V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 950 |
| STF3NK100Z | ST Micro | Power Field-Effect Transistor, 2.5A I(D), 1000V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 950 |
| STP2NK100Z | ST Micro | Power Field-Effect Transistor, 1.85A I(D), 1000V, 8.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 950 |
| STP45N60DM6 | ST Micro | Power Field-Effect Transistor, 30A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 950 |
| STP4NB50FP | ST Micro | Power Field-Effect Transistor, 2.5A I(D), 500V, 2.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 950 |
| STP9NK60ZFP | ST Micro | Power Field-Effect Transistor, 7A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 950 |
| STP9NM60N | ST Micro | Power Field-Effect Transistor, 6.5A I(D), 600V, 0.745ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 950 |
| TK58A06N1 | Toshiba | Power Field-Effect Transistor, 100A I(D), 60V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 950 |
| IRF7413PBF | Infineon | Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 941 |
| FDD5690 | Onsemi | Power Field-Effect Transistor, 30A I(D), 60V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 940 |
| IRF8010STRLPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 940 |
| IRFF320 | Fairchild Semi | Power Field-Effect Transistor, 2.5A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | 940 |
| STB19NF20 | ST Micro | Power Field-Effect Transistor, 15A I(D), 200V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 940 |
| FDMC8010 | Onsemi | Power Field-Effect Transistor, 30A I(D), 30V, 0.0013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA | 933 |
| BSP129E6327 | Infineon | Power Field-Effect Transistor, 0.2A I(D), 240V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 930 |
| STP13NM60ND | ST Micro | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 930 |
| STY112N65M5 | ST Micro | Power Field-Effect Transistor, 93A I(D), 650V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 930 |
| FQB47P06TM_AM002 | Fairchild Semi | Power Field-Effect Transistor, 47A I(D), 60V, 0.026ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 928 |
| IRF7342D2TRPBF | Infineon | Power Field-Effect Transistor, 3.4A I(D), 1-Element, P-Channel, Metal-oxide Semiconductor FET | 927 |
| ZXMN10A11GTA | Diodes | Power Field-Effect Transistor, 2.4A I(D), 100V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 926 |
| IRFPC50APBF | Vishay | Power Field-Effect Transistor, 11A I(D), 600V, 0.58ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 925 |
| STS4DNFS30L | ST Micro | Power Field-Effect Transistor, 4A I(D), 30V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 925 |
| IRFP150A | Samsung | Power Field-Effect Transistor, 43A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 923 |
| SI7617DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 13.9A I(D), 30V, 0.0123ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 920 |
| STF13NM60ND | ST Micro | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 920 |
| IRF5305SPBF | Infineon | Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 917 |
| AOT240L | Alpha Omega | Power Field-Effect Transistor, 105A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 915 |
| STB10NK60ZT4 | ST Micro | Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 915 |
| BUZ349 | Infineon | Power Field-Effect Transistor, 32A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA | 913 |
| 2SJ542-E | Renesas | Power Field-Effect Transistor, 18A I(D), 60V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 911 |
| IRLR8113PBF | IR | Power Field-Effect Transistor, 30A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 910 |
| AUIRFU8403 | Infineon | Power Field-Effect Transistor, 100A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 900 |
| IRF5305LPBF | IR | Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 900 |
| IRF720PBF | Vishay | Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 900 |
| IRFB7540PBF | Infineon | Power Field-Effect Transistor, 110A I(D), 60V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 900 |
| IRFI9634GPBF | Vishay | Power Field-Effect Transistor, 4.1A I(D), 250V, 1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 900 |
| IRFIB6N60A | Vishay | Power Field-Effect Transistor, 5.5A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 900 |
| IRFR1N60A | Vishay | Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 900 |
| IRFS720B | Fairchild Semi | Power Field-Effect Transistor, 3.3A I(D), 400V, 1.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 900 |
| IRFS7734PBF | Infineon | Power Field-Effect Transistor, 183A I(D), 75V, 0.0035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 900 |
| IRFU4104PBF | IR | Power Field-Effect Transistor, 42A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 900 |
| IRL520NLPBF | IR | Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 900 |
| IRLU7821PBF | IR | Power Field-Effect Transistor, 65A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 900 |
| SIHB15N60E-GE3 | Vishay | Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 900 |
| SIHB25N50E-GE3 | Vishay | Power Field-Effect Transistor, 26A I(D), 500V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 900 |
| SIHFR1N60A | Vishay | Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 900 |
| SIHG22N50D-GE3 | Vishay | Power Field-Effect Transistor, 22A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 900 |
| SIHP12N50C-E3 | Vishay | Power Field-Effect Transistor, 12A I(D), 500V, 0.555ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 900 |
| SIHP24N65E-GE3 | Vishay | Power Field-Effect Transistor, 24A I(D), 650V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 900 |
| SIHP30N60E-GE3 | Vishay | Power Field-Effect Transistor, 29A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 900 |
| SIHP5N50D-GE3 | Vishay | Power Field-Effect Transistor, 5.3A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 900 |
| STD4NK80Z-1 | ST Micro | Power Field-Effect Transistor, 3A I(D), 800V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 900 |
| STF21N65M5 | ST Micro | Power Field-Effect Transistor, 17A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 900 |
| STF32NM50N | ST Micro | Power Field-Effect Transistor, 22A I(D), 500V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 900 |
| STF8N90K5 | ST Micro | Power Field-Effect Transistor, 8A I(D), 900V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 900 |
| STFW2N105K5 | ST Micro | Power Field-Effect Transistor, 2A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 900 |
| STP34NM60N | ST Micro | Power Field-Effect Transistor, 29A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 900 |
| STP6N80K5 | ST Micro | Power Field-Effect Transistor, 4.5A I(D), 800V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 900 |
| STP7NK40ZFP | ST Micro | Power Field-Effect Transistor, 5.4A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 900 |
| STP9NK60Z | ST Micro | Power Field-Effect Transistor, 7A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 900 |
| IRF6644TRPBF | Infineon | Power Field-Effect Transistor, 10A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 895 |
| SUD50N06-09L-E3 | Vishay | Power Field-Effect Transistor, 50A I(D), 60V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 895 |
| IRL3303LPBF | IR | Power Field-Effect Transistor, 38A I(D), 30V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 890 |
| TPCA8106(TE12L,Q) | Toshiba | Power Field-Effect Transistor | 890 |
| ZXMN7A11GTA | Diodes | Power Field-Effect Transistor, 3.8A I(D), 70V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 886 |
| SUD50N04-8M8P-4GE3 | Vishay | Power Field-Effect Transistor, 14A I(D), 40V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 885 |
| ZVN4306GVTA | Diodes | Power Field-Effect Transistor, 2.1A I(D), 60V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 881 |
| IRLR110 | IR | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 875 |
| SMD25N05-45L | Siliconix | Power Field-Effect Transistor, 5A I(D), 50V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 875 |
| TK7P50D(T6RSS-Q) | Toshiba | Power Field-Effect Transistor | 870 |
| ZXMP6A17GTA | Diodes | Power Field-Effect Transistor, 3A I(D), 60V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 861 |
| IRFML8244TRPBF | Infineon | Power Field-Effect Transistor, 5.8A I(D), 25V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | 860 |
| IRF6715MTRPBF | Infineon | Power Field-Effect Transistor, 34A I(D), 25V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 855 |
| AUIRFZ48ZS | Infineon | Power Field-Effect Transistor, 61A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 850 |
| FDT457N | Onsemi | Power Field-Effect Transistor, 5A I(D), 30V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 850 |
| FQP5N40 | Fairchild Semi | Power Field-Effect Transistor, 4.5A I(D), 400V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 850 |
| IRFI510GPBF | Vishay | Power Field-Effect Transistor, 4.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 850 |
| IRFR220NTRLPBF | Infineon | Power Field-Effect Transistor, 5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 850 |
| IRL3715ZSPBF | IR | Power Field-Effect Transistor, 50A I(D), 20V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 850 |
| IRL3803SPBF | Infineon | Power Field-Effect Transistor, 140A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 850 |
| IRLZ44ZSPBF | Infineon | Power Field-Effect Transistor, 51A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 850 |
| MMF60R290PTH | Magnachip | Power Field-Effect Transistor | 850 |
| STF42N65M5 | ST Micro | Power Field-Effect Transistor, 33A I(D), 650V, 0.079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 850 |
| FQP19N20C | Onsemi | Power Field-Effect Transistor, 19A I(D), 200V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 849 |
| IPD30N06S2L-23 | Infineon | Power Field-Effect Transistor, 30A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 849 |
| IRF6715MTR1PBF | IR | Power Field-Effect Transistor, 34A I(D), 25V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 845 |
| SPB47N10L | Infineon | Power Field-Effect Transistor, 47A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 845 |
| HUF76143S3S | Harris | Power Field-Effect Transistor, 75A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 841 |
| STB55NF06T4 | ST Micro | Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 840 |
| IRFR3910 | Infineon | Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 839 |
| IRF9321TRPBF | IR | Power Field-Effect Transistor, 15A I(D), 30V, 0.0072ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 835 |
| PSMN025-100D | Nexperia | Power Field-Effect Transistor, 47A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 835 |
| STB28N60DM2 | ST Micro | Power Field-Effect Transistor | 830 |
| AUIRLR024Z | Infineon | Power Field-Effect Transistor, 16A I(D), 55V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 825 |
| AUIRLU024Z | Infineon | Power Field-Effect Transistor, 16A I(D), 55V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 825 |
| IRFU120ZPBF | IR | Power Field-Effect Transistor, 8.7A I(D), 100V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 825 |
| IRFU3704ZPBF | IR | Power Field-Effect Transistor, 30A I(D), 20V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 825 |
| IRL540NSTRRPBF | Infineon | Power Field-Effect Transistor, 36A I(D), 100V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 825 |
| IRLR8203PBF | IR | Power Field-Effect Transistor, 30A I(D), 30V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 825 |
| SISA96DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 16A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 825 |
| STD2NA60 | ST Micro | Power Field-Effect Transistor, 2.3A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 825 |
| AUIRF7640S2TR | Infineon | Power Field-Effect Transistor, 5.8A I(D), 60V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 814 |
| NIF9N05CLT1G | Onsemi | Power Field-Effect Transistor, 2.6A I(D), 52V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 810 |
| 2SK1669 | Renesas | Power Field-Effect Transistor, 30A I(D), 250V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 809 |
| ZVNL120GTA | Diodes | Power Field-Effect Transistor, 0.32A I(D), 200V, 10ohm, 1-Element, N-Channel, Silicon, Trench Mosfet FET | 804 |
| 2SK3767(Q) | Toshiba | Power Field-Effect Transistor, 2A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 800 |
| AOB280L | Alpha Omega | Power Field-Effect Transistor, 140A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 800 |
| AOB284L | Alpha Omega | Power Field-Effect Transistor, 105A I(D), 80V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| AOT10N60 | Alpha Omega | Power Field-Effect Transistor, 10A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 800 |
| AUIRF4104S | Infineon | Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| AUIRFS3207ZTRL | Infineon | Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| AUIRFS4310ZTRL | Infineon | Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| AUIRFZ48Z | Infineon | Power Field-Effect Transistor, 61A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 800 |
| BUK7109-75AIE | Nexperia | Power Field-Effect Transistor, 75A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| FCB20N60FTM | Onsemi | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| FCP9N60N | Onsemi | Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 800 |
| FDB016N04AL7 | Onsemi | Power Field-Effect Transistor, 160A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| FDB8447L | Onsemi | Power Field-Effect Transistor, 15A I(D), 40V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| FDP8870 | Onsemi | Power Field-Effect Transistor, 19A I(D), 30V, 0.0046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 800 |
| FQB4N80TM | Onsemi | Power Field-Effect Transistor, 3.9A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| FQB50N06TM | Onsemi | Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| FQB58N08TM | Fairchild Semi | Power Field-Effect Transistor, 57.5A I(D), 80V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| FQB6N90TM | Fairchild Semi | Power Field-Effect Transistor, 5.8A I(D), 900V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| FQB7P20TM | Onsemi | Power Field-Effect Transistor, 7.3A I(D), 200V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| IPA70R450P7S | Infineon | Power Field-Effect Transistor, 700V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 800 |
| IRC634PBF | Vishay | Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRF520VSPBF | IR | Power Field-Effect Transistor, 9.6A I(D), 100V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRF630STRLPBF | IR | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRF634STRRPBF | Vishay | Power Field-Effect Transistor, 8.1A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRF644NSTRLPBF | Vishay | Power Field-Effect Transistor, 14A I(D), 250V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRF644STRRPBF | IR | Power Field-Effect Transistor, 14A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRF6613TR1PBF | IR | Power Field-Effect Transistor, 23A I(D), 40V, 0.0034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRF710STRLPBF | Vishay | Power Field-Effect Transistor, 2A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| IRF720SPBF | Vishay | Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| IRF9530STRRPBF | Vishay | Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| IRF9640STRL | Vishay | Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| IRFB31N20D | IR | Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 800 |
| IRFBC30STRLPBF | Vishay | Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRFBF30STRLPBF | Vishay | Power Field-Effect Transistor, 3.6A I(D), 900V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| IRFH5204TR2PBF | IR | Power Field-Effect Transistor, 22A I(D), 40V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRFH5220TR2PBF | IR | Power Field-Effect Transistor, 3.8A I(D), 200V, 0.0999ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRFH8318TR2PBF | IR | Power Field-Effect Transistor, 27A I(D), 30V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRFHM830DTR2PBF | IR | Power Field-Effect Transistor, 20A I(D), 30V, 0.0071ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRFHM831TR2PBF | IR | Power Field-Effect Transistor, 14A I(D), 30V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRFHM8363TR2PBF | IR | Power Field-Effect Transistor, 11A I(D), 30V, 0.0149ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRFR224PBF | Vishay | Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 800 |
| IRFS4010TRL7PP | Infineon | Power Field-Effect Transistor, 190A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 800 |
| IRFS4321TRL7PP | Infineon | Power Field-Effect Transistor, 86A I(D), 150V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRFS7540TRLPBF | Infineon | Power Field-Effect Transistor, 110A I(D), 60V, 0.0051ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| IRL2910STRLPBF | Infineon | Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRL530STRRPBF | Vishay | Power Field-Effect Transistor, 15A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| IRL540SPBF | Vishay | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| IRL630STRLPBF | Vishay | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| IRLH7134TR2PBF | IR | Power Field-Effect Transistor, 134A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 800 |
| IRLS3813TRLPBF | Infineon | Power Field-Effect Transistor | 800 |
| IRLZ44STRRPBF | Vishay | Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| MDP15N60GTH | Magnachip | Power Field-Effect Transistor | 800 |
| MTB30P06VT4 | Onsemi | Power Field-Effect Transistor, 30A I(D), 60V, 0.08ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| PSMN008-75B | Nexperia | Power Field-Effect Transistor, 75A I(D), 75V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| SGSP367 | ST Micro | Power Field-Effect Transistor, 12A I(D), 200V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 800 |
| SIHB12N60ET5-GE3 | Vishay | Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| SQM100N04-2M7_GE3 | Vishay | Power Field-Effect Transistor, 100A I(D), 40V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| SQM100N10-10_GE3 | Vishay | Power Field-Effect Transistor, 100A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| SQM200N04-1M1L_GE3 | Vishay | Power Field-Effect Transistor, 200A I(D), 40V, 0.0011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| STF21NM60ND | ST Micro | Power Field-Effect Transistor, 17A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 800 |
| SUM70040E-GE3 | Vishay | Power Field-Effect Transistor, 120A I(D), 100V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| SUM70090E-GE3 | Vishay | Power Field-Effect Transistor, 50A I(D), 100V, 0.0089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 800 |
| VNB28N04TR-E | ST Micro | Power Field-Effect Transistor, 28A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 800 |
| ZVN0545GTA | Zetex | Power Field-Effect Transistor, 0.14A I(D), 450V, 50ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 800 |
| 2SK1768 | Toshiba | Power Field-Effect Transistor, 12A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 799 |
| BTS100E3045A | Infineon | Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 798 |
| NTP6410ANG | Onsemi | Power Field-Effect Transistor, 76A I(D), 100V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 798 |
| NDB610A | Fairchild Semi | Power Field-Effect Transistor, 26A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 797 |
| FDB3860 | Fairchild Semi | Power Field-Effect Transistor, 6.4A I(D), 100V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 795 |
| PHB66NQ03LT | Nexperia | Power Field-Effect Transistor, 66A I(D), 25V, 0.0136ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 795 |
| RFD16N05SM | Harris | Power Field-Effect Transistor, 16A I(D), 50V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 795 |
| STP16N65M2 | ST Micro | Power Field-Effect Transistor | 795 |
| AUIRFS8409TRL | Infineon | Power Field-Effect Transistor, 195A I(D), 40V, 0.0012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 790 |
| IXTY01N100 | Littelfuse | Power Field-Effect Transistor, 0.1A I(D), 1000V, 80ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 790 |
| IRFU110PBF | Vishay | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 788 |
| PHP6N50E | NXP | Power Field-Effect Transistor, 5.9A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 785 |
| HUF76131SK8 | Fairchild Semi | Power Field-Effect Transistor, 10A I(D), 30V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 784 |
| PHP45N03LT | NXP | Power Field-Effect Transistor, 45A I(D), 25V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 782 |
| IRF7832ZPBF | IR | Power Field-Effect Transistor, 21A I(D), 30V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 774 |
| SI4965DY-T1 | Vishay | Power Field-Effect Transistor, 8A I(D), 8V, 0.021ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 771 |
| STB6NK90ZT4 | ST Micro | Power Field-Effect Transistor, 5.8A I(D), 900V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 770 |
| RFP15N05L | Fairchild Semi | Power Field-Effect Transistor, 15A I(D), 50V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 765 |
| IRF7379PBF | IR | Power Field-Effect Transistor, 5.8A I(D), 30V, 0.045ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 760 |
| IRF7902PBF | IR | Power Field-Effect Transistor, 9.7A I(D), 30V, 0.0144ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 760 |
| HUF76432S3ST | Fairchild Semi | Power Field-Effect Transistor, 59A I(D), 60V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 754 |
| 2SK3759 | Toshiba | Power Field-Effect Transistor, 8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 750 |
| AUIRFR1010Z | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 750 |
| AUIRFR540Z | Infineon | Power Field-Effect Transistor, 35A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 750 |
| AUIRFU3607 | Infineon | Power Field-Effect Transistor, 56A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 750 |
| AUIRFU4292 | Infineon | Power Field-Effect Transistor, 9.3A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 750 |
| FCU900N60Z | Onsemi | Power Field-Effect Transistor, 4.5A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 750 |
| FDMS86200DC | Onsemi | Power Field-Effect Transistor, 9.3A I(D), 150V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | 750 |
| FDP070AN06A0 | Onsemi | Power Field-Effect Transistor, 15A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 750 |
| FDPF18N50 | Onsemi | Power Field-Effect Transistor, 18A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 750 |
| HUF76419D3S | Fairchild Semi | Power Field-Effect Transistor, 20A I(D), 60V, 0.043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 750 |
| IPG20N06S3L-35 | Infineon | Power Field-Effect Transistor, 20A I(D), 55V, 0.035ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 750 |
| IRF3704SPBF | IR | Power Field-Effect Transistor, 75A I(D), 20V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 750 |
| IRFIB8N50K | Vishay | Power Field-Effect Transistor, 6.7A I(D), 500V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 750 |
| IRFIBC40GPBF | Vishay | Power Field-Effect Transistor, 3.5A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 750 |
| IRLU7843PBF | Infineon | Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 750 |
| MDF16N50GTH | Magnachip | Power Field-Effect Transistor, 16A I(D), 500V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 750 |
| SIHP10N40D-GE3 | Vishay | Power Field-Effect Transistor, 10A I(D), 400V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 750 |
| SPU31N05 | Infineon | Power Field-Effect Transistor, 31A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 750 |
| STF35N60DM2 | ST Micro | Power Field-Effect Transistor, 28A I(D), 600V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 750 |
| STF36N60M6 | ST Micro | Power Field-Effect Transistor | 750 |
| STF5NK100Z | ST Micro | Power Field-Effect Transistor | 750 |
| IRFBC40 | Vishay | Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 747 |
| IRFZ24NPBF | Infineon | Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 746 |
| BUK564-60H | NXP | Power Field-Effect Transistor, 39A I(D), 60V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 745 |
| SI4466DY-T1 | Vishay | Power Field-Effect Transistor, 9.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 745 |
| IRF3315SPBF | Infineon | Power Field-Effect Transistor, 21A I(D), 150V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 740 |
| IRF3704ZSPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 20V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 740 |
| IRFR9024NTRPBF | Infineon | Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 740 |
| SI4856DY-T1 | Vishay | Power Field-Effect Transistor, 12A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 735 |
| IRFBF20SPBF | Vishay | Power Field-Effect Transistor, 1.7A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 730 |
| BTS282ZE-3180A | Infineon | Power Field-Effect Transistor, 80A I(D), 49V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 723 |
| BUK454-200A | NXP | Power Field-Effect Transistor, 9.2A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 723 |
| IRF9Z34NSTRRPBF | Infineon | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 721 |
| STW21NM60ND | ST Micro | Power Field-Effect Transistor, 17A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 720 |
| BSP300L6327 | Infineon | Power Field-Effect Transistor, 0.19A I(D), 800V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 716 |
| FDMC86320 | Onsemi | Power Field-Effect Transistor, 10.7A I(D), 80V, 0.0117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 715 |
| BSP17E6327 | Infineon | Power Field-Effect Transistor, 3.2A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 710 |
| IPP100N06S2L-05 | Infineon | Power Field-Effect Transistor, 100A I(D), 55V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 706 |
| BSP89H6327 | Infineon | Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 705 |
| ISP12DP06NM | Infineon | Power Field-Effect Transistor, 2.8A I(D), 60V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 705 |
| IXFT40N30Q | IXYS | Power Field-Effect Transistor, 40A I(D), 300V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268 | 702 |
| 2SJ239 | Toshiba | Power Field-Effect Transistor, 5A I(D), 60V, 0.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 700 |
| AUIRF2804S-7P | Infineon | Power Field-Effect Transistor, 240A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB | 700 |
| AUIRFB4610 | Infineon | Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 700 |
| AUIRFS3004-7P | Infineon | Power Field-Effect Transistor, 240A I(D), 40V, 0.00125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB | 700 |
| AUIRL3705Z | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 700 |
| FDB6021P | Fairchild Semi | Power Field-Effect Transistor, 28A I(D), 20V, 0.03ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 700 |
| FQPF13N50C | Onsemi | Power Field-Effect Transistor, 13A I(D), 500V, 0.48ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 700 |
| IRF3711PBF | Infineon | Power Field-Effect Transistor, 110A I(D), 20V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 700 |
| IRF6802SDTR1PBF | IR | Power Field-Effect Transistor, 57A I(D), N-Channel, Metal-oxide Semiconductor FET | 700 |
| IRF9530N | Infineon | Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 700 |
| IRFB23N15DPBF | Infineon | Power Field-Effect Transistor, 23A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 700 |
| IRFPC60PBF | Vishay | Power Field-Effect Transistor, 16A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 700 |
| IRFZ44R | Siliconix | Power Field-Effect Transistor, 50A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 700 |
| IRL2703SPBF | IR | Power Field-Effect Transistor, 24A I(D), 30V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 700 |
| SIHF22N60E-E3 | Vishay | Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 700 |
| STF24N65M2 | ST Micro | Power Field-Effect Transistor, 16A I(D), 650V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 700 |
| STP34NM60ND | ST Micro | Power Field-Effect Transistor | 700 |
| IRFP254 | Vishay | Power Field-Effect Transistor, 23A I(D), 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 699 |
| IRF5210STRLPBF | Infineon | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 695 |
| BSC060N10NS3G | Infineon | Power Field-Effect Transistor, 14.9A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 693 |
| RFD16N05LSM | Fairchild Semi | Power Field-Effect Transistor, 16A I(D), 50V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 690 |
| IRF540NPBF | Infineon | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 686 |
| FQP7P06 | Onsemi | Power Field-Effect Transistor, 7A I(D), 60V, 0.41ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 684 |
| IRL3803STRLPBF | Infineon | Power Field-Effect Transistor, 140A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 680 |
| STY60NM60 | ST Micro | Power Field-Effect Transistor, 60A I(D), 600V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 680 |
| AUIRFR3504Z | Infineon | Power Field-Effect Transistor, 42A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 675 |
| HUF76407D3S | Fairchild Semi | Power Field-Effect Transistor, 12A I(D), 60V, 0.117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 675 |
| IRFPS43N50KPBF | Vishay | Power Field-Effect Transistor, 47A I(D), 500V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 675 |
| IRFR420ATRPBF | Vishay | Power Field-Effect Transistor, 3.3A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 675 |
| SPD50N03S2-07 | Infineon | Power Field-Effect Transistor, 50A I(D), 30V, 0.0073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 675 |
| NTD2955T4G | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 674 |
| AUIRFR3504 | Infineon | Power Field-Effect Transistor, 56A I(D), 40V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 670 |
| HUF75332S3ST | Intersil | Power Field-Effect Transistor, 60A I(D), 55V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 670 |
| IRFS3607PBF | Infineon | Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 670 |
| HUF75329S3ST | Fairchild Semi | Power Field-Effect Transistor, 49A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 667 |
| IRF7404QPBF | IR | Power Field-Effect Transistor, 6.7A I(D), 20V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 665 |
| IRF7451PBF | Infineon | Power Field-Effect Transistor, 3.6A I(D), 150V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, MS-012AA | 665 |
| IRFBA1404PPBF | Infineon | Power Field-Effect Transistor, 95A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-273AA | 661 |
| STWA48N60DM2 | ST Micro | Power Field-Effect Transistor | 660 |
| FDD16AN08A0 | Onsemi | Power Field-Effect Transistor, 9A I(D), 75V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 659 |
| SI7949DP-T1-E3 | Vishay | Power Field-Effect Transistor, 3.2A I(D), 60V, 0.064ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 658 |
| BSC240N12NS3G | Infineon | Power Field-Effect Transistor, 37A I(D), 120V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 655 |
| AUIRFSL8407 | Infineon | Power Field-Effect Transistor, 195A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 650 |
| AUIRL3705ZL | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 650 |
| FQP34N20 | Onsemi | Power Field-Effect Transistor, 31A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 650 |
| FQPF27N25 | Onsemi | Power Field-Effect Transistor, 14A I(D), 250V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 650 |
| HUF75321P3 | Onsemi | Power Field-Effect Transistor, 35A I(D), 55V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 650 |
| IRF135S203 | Infineon | Power Field-Effect Transistor | 650 |
| IRF9630STRR | Vishay | Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 650 |
| IRFI740GLCPBF | Vishay | Power Field-Effect Transistor, 5.7A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 650 |
| IRFL4105TR | IR-HiRel | Power Field-Effect Transistor, 3.7A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 650 |
| MDP11N60TH | Magnachip | Power Field-Effect Transistor | 650 |
| MDP1933TH | Magnachip | Power Field-Effect Transistor | 650 |
| MMF60R750PTH | Magnachip | Power Field-Effect Transistor | 650 |
| NTMFD5C466NT1G | Onsemi | Power Field-Effect Transistor, 14A I(D), 40V, 0.0081ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 650 |
| PSMN004-60B | Nexperia | Power Field-Effect Transistor, 75A I(D), 60V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 650 |
| SIHB33N60E-E3 | Vishay | Power Field-Effect Transistor, 33A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 650 |
| STP11NM60A | ST Micro | Power Field-Effect Transistor, 11A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 650 |
| STP32NM50N | ST Micro | Power Field-Effect Transistor, 22A I(D), 500V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 650 |
| STP80NF55-06FP | ST Micro | Power Field-Effect Transistor, 60A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 650 |
| SUP85N10-10P-E3 | Vishay | Power Field-Effect Transistor, 85A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 650 |
| TK35A08N1 | Toshiba | Power Field-Effect Transistor, 55A I(D), 80V, 0.0122ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 650 |
| IRL510PBF | Vishay | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 642 |
| BSO301SP | Infineon | Power Field-Effect Transistor, 14.9A I(D), 30V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 635 |
| BUZ42 | Infineon | Power Field-Effect Transistor, 4A I(D), 500V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 635 |
| IRF1310NSTRL | IR | Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 620 |
| IRF630NS | Infineon | Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 620 |
| IRFB4410ZPBF | IR | Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 617 |
| SI5424DC-T1-GE3 | Vishay | Power Field-Effect Transistor, 6A I(D), 30V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 615 |
| ZVP2106GTA | Diodes | Power Field-Effect Transistor, 0.45A I(D), 60V, 5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 614 |
| IRF7822TRPBF | IR | Power Field-Effect Transistor, 18A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 610 |
| 2SK4013 | Toshiba | Power Field-Effect Transistor, 6A I(D), 800V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 600 |
| AUIRF1010Z | Infineon | Power Field-Effect Transistor, 94A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 600 |
| AUIRF1324S-7P | Infineon | Power Field-Effect Transistor, 240A I(D), 24V, 0.001ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 600 |
| AUIRF1405 | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 600 |
| AUIRF3710ZS | Infineon | Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 600 |
| AUIRFR4105 | Infineon | Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 600 |
| AUIRFU4104 | Infineon | Power Field-Effect Transistor, 42A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 600 |
| BSP373E6327 | Siemens | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 600 |
| FCP190N60 | Onsemi | Power Field-Effect Transistor, 20.2A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 600 |
| FQPF19N10 | Onsemi | Power Field-Effect Transistor, 13.6A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 600 |
| IPA60R385CP | Infineon | Power Field-Effect Transistor, 9A I(D), 650V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 600 |
| IRF1324SPBF | IR | Power Field-Effect Transistor, 195A I(D), 24V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 600 |
| IRF2903ZPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 600 |
| IRF3711S | IR-HiRel | Power Field-Effect Transistor, 110A I(D), 20V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 600 |
| IRFS254B | Fairchild Semi | Power Field-Effect Transistor, 16A I(D), 250V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 600 |
| IRFS3507PBF | IR | Power Field-Effect Transistor, 75A I(D), 75V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 600 |
| IRFS7787TRLPBF | Infineon | Power Field-Effect Transistor, 76A I(D), 75V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 600 |
| IRFU3910PBF | Infineon | Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 600 |
| MDP10N60GTH | Magnachip | Power Field-Effect Transistor | 600 |
| NDP7060 | Onsemi | Power Field-Effect Transistor, 75A I(D), 60V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 600 |
| NP80N04MHE-S18-AY | Renesas | Power Field-Effect Transistor, 80A I(D), 40V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 600 |
| NTD20N06T4G | Onsemi | Power Field-Effect Transistor, 20A I(D), 60V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 600 |
| SIHG22N60E-GE3 | Vishay | Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 600 |
| SIHP17N60D-E3 | Vishay | Power Field-Effect Transistor, 17A I(D), 600V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 600 |
| SIHP7N60E-GE3 | Vishay | Power Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 600 |
| STD2NB25-1 | ST Micro | Power Field-Effect Transistor, 2A I(D), 250V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 600 |
| STF33N60DM6 | ST Micro | Power Field-Effect Transistor, 25A I(D), 600V, 0.128ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 600 |
| STP6NK60ZFP | ST Micro | Power Field-Effect Transistor, 6A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 600 |
| STW15NK50Z | ST Micro | Power Field-Effect Transistor, 14A I(D), 500V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 600 |
| STW24N60M6 | ST Micro | Power Field-Effect Transistor, 17A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-247 | 600 |
| STW25N60M2-EP | ST Micro | Power Field-Effect Transistor | 600 |
| STW27N60M2-EP | ST Micro | Power Field-Effect Transistor, 20A I(D), 600V, 0.163ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 600 |
| STW40N60M2 | ST Micro | Power Field-Effect Transistor, 34A I(D), 600V, 0.088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 600 |
| STW72N60DM2AG | ST Micro | Power Field-Effect Transistor, 66A I(D), 600V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 600 |
| STW8N90K5 | ST Micro | Power Field-Effect Transistor, 8A I(D), 900V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 600 |
| STWA20N95K5 | ST Micro | Power Field-Effect Transistor | 600 |
| TK30A06N1 | Toshiba | Power Field-Effect Transistor, 43A I(D), 60V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 600 |
| FDS5672 | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 598 |
| IRFU024N | IR | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 596 |
| STW26N60M2 | ST Micro | Power Field-Effect Transistor | 595 |
| IRLR3714PBF | IR | Power Field-Effect Transistor, 30A I(D), 20V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 592 |
| BSP297E6327 | Infineon | Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 590 |
| BSP320SL6327 | Infineon | Power Field-Effect Transistor, 2.9A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 590 |
| IPD50P03P4L-11 | Infineon | Power Field-Effect Transistor, 50A I(D), 30V, 0.0105ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 590 |
| IRFB4228PBF | Infineon | Power Field-Effect Transistor, 83A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 590 |
| IRFH5300TR2PBF | IR | Power Field-Effect Transistor, 40A I(D), 30V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 590 |
| STV40N10 | ST Micro | Power Field-Effect Transistor, 40A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 590 |
| IRFR6215TRPBF | Infineon | Power Field-Effect Transistor, 13A I(D), 150V, 0.295ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 585 |
| IRFS3006TRL7PP | Infineon | Power Field-Effect Transistor, 240A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 | 585 |
| SPB20N60S5 | Siemens | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 585 |
| STL40N75LF3 | ST Micro | Power Field-Effect Transistor, 40A I(D), 75V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 585 |
| IRLR2703PBF | Infineon | Power Field-Effect Transistor, 23A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 580 |
| MMDF2C01HDR1 | Motorola | Power Field-Effect Transistor, 2A I(D), 12V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 580 |
| SPU01N60S5 | Infineon | Power Field-Effect Transistor, 0.8A I(D), 600V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 580 |
| IRF4905PBF | Infineon | Power Field-Effect Transistor, 74A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 579 |
| 2SK2221 | Renesas | Power Field-Effect Transistor, 8A I(D), 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 578 |
| IRF3704ZPBF | IR | Power Field-Effect Transistor, 42A I(D), 20V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 575 |
| IRL3803S | Infineon | Power Field-Effect Transistor, 140A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 575 |
| NTB25P06T4G | Onsemi | Power Field-Effect Transistor, 27.5A I(D), 60V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 575 |
| SPN04N60S5 | Infineon | Power Field-Effect Transistor, 0.8A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 575 |
| IRF7311PBF | Infineon | Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 570 |
| IRF7313QPBF | IR | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 570 |
| IRF7322D1PBF | IR | Power Field-Effect Transistor, 5.3A I(D), 20V, 0.062ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 570 |
| STW33N60M6 | ST Micro | Power Field-Effect Transistor, 25A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-247 | 570 |
| STWA48N60M2 | ST Micro | Power Field-Effect Transistor | 570 |
| IRF7103TRPBF | Infineon | Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 565 |
| IRF7862PBF | Infineon | Power Field-Effect Transistor, 21A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 565 |
| SI7846DP-T1-E3 | Vishay | Power Field-Effect Transistor, 4A I(D), 150V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 565 |
| TN5325K1-G | Microchip | Power Field-Effect Transistor, 0.15A I(D), 250V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB | 565 |
| AUIRLL024N | IR | Power Field-Effect Transistor, 3.1A I(D), 55V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 560 |
| STD2NB80T4 | ST Micro | Power Field-Effect Transistor, 1.9A I(D), 800V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 560 |
| TN2504N8 | Supertex | Power Field-Effect Transistor, 0.89A I(D), 40V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA | 555 |
| FQP46N15 | Onsemi | Power Field-Effect Transistor, 45.6A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 550 |
| IRF610SPBF | Vishay | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 550 |
| IRF7341PBF | Infineon | Power Field-Effect Transistor, 4.7A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 550 |
| IRF9540NSPBF | Infineon | Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 550 |
| IRFHM792TR2PBF | IR | Power Field-Effect Transistor, 2.3A I(D), 100V, 0.195ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 550 |
| IRFI840GPBF | Vishay | Power Field-Effect Transistor, 4.6A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 550 |
| IRFS7437-7PPBF | Infineon | Power Field-Effect Transistor, 195A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 550 |
| STF33N60M2 | ST Micro | Power Field-Effect Transistor, 26A I(D), 600V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 550 |
| STP16N65M5 | ST Micro | Power Field-Effect Transistor, 12A I(D), 650V, 0.279ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 550 |
| STP17NF25 | ST Micro | Power Field-Effect Transistor, 17A I(D), 250V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 550 |
| IRF840SPBF | Vishay | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 549 |
| BSZ068N06NS | Infineon | Power Field-Effect Transistor, 63A I(D), 60V, 0.0068ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 545 |
| 2SK2225-80-E#T2 | Renesas | Power Field-Effect Transistor, 2A I(D), 1500V, 12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 540 |
| HUFA75332S3ST | Fairchild Semi | Power Field-Effect Transistor, 60A I(D), 55V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 540 |
| IRF7465TRPBF | Infineon | Power Field-Effect Transistor, 1.9A I(D), 150V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 540 |
| STW15NM60ND | ST Micro | Power Field-Effect Transistor, 14A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 540 |
| STW48N60M2-4 | ST Micro | Power Field-Effect Transistor, 42A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 540 |
| TK30E06N1 | Toshiba | Power Field-Effect Transistor, 43A I(D), 60V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 540 |
| IRFR3518PBF | Infineon | Power Field-Effect Transistor, 38A I(D), 80V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 538 |
| BSP373L6327 | Infineon | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 535 |
| NTR4501NT1G | Onsemi | Power Field-Effect Transistor, 3.2A I(D), 20V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 | 526 |
| FDS4953 | Fairchild Semi | Power Field-Effect Transistor, 5A I(D), 30V, 0.055ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 525 |
| IRFR4105ZPBF | IR | Power Field-Effect Transistor, 30A I(D), 55V, 0.0245ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 525 |
| IRFU3505PBF | IR | Power Field-Effect Transistor, 30A I(D), 55V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 525 |
| IRFU4105PBF | IR | Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 525 |
| IRLU7833PBF | IR | Power Field-Effect Transistor, 30A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 525 |
| STU85N3LH5 | ST Micro | Power Field-Effect Transistor, 80A I(D), 30V, 0.0071ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 525 |
| IRFR2307ZPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 75V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 524 |
| IRFR5505 | Infineon | Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 522 |
| IRFU9214 | Siliconix | Power Field-Effect Transistor, 2.7A I(D), 250V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 520 |
| AUIRLR2908 | Infineon | Power Field-Effect Transistor, 30A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 517 |
| SI4850EY-T1 | Vishay | Power Field-Effect Transistor, 6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 515 |
| SPN03N60S5 | Infineon | Power Field-Effect Transistor, 0.7A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 515 |
| STB16NS25T4 | ST Micro | Power Field-Effect Transistor, 16A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 515 |
| NTD3055L104G | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.104ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 512 |
| RJK1055DPB-00-J5 | Renesas | Power Field-Effect Transistor, 23A I(D), 100V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 512 |
| AUIRFR024N | Infineon | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 505 |
| 2SK2649-01R | Fuji Elec | Power Field-Effect Transistor, 9A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 500 |
| AUIRF3808 | Infineon | Power Field-Effect Transistor, 140A I(D), 75V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 500 |
| AUIRFB3207 | Infineon | Power Field-Effect Transistor, 75A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| AUIRFB8405 | Infineon | Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 500 |
| AUIRFBA1405 | Infineon | Power Field-Effect Transistor, 95A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 500 |
| AUIRFI3205 | Infineon | Power Field-Effect Transistor, 64A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 500 |
| AUIRFI4905 | Infineon | Power Field-Effect Transistor, 39A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| AUIRFIZ34N | Infineon | Power Field-Effect Transistor, 21A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 500 |
| AUIRFS8403 | Infineon | Power Field-Effect Transistor, 123A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 500 |
| AUIRFSL4010 | Infineon | Power Field-Effect Transistor, 180A I(D), 100V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 500 |
| AUIRFSL4310 | Infineon | Power Field-Effect Transistor, 75A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 500 |
| AUIRFZ46NL | Infineon | Power Field-Effect Transistor, 39A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 500 |
| BTS412A | Siemens | Power Field-Effect Transistor, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 500 |
| FQPF7N65C | Onsemi | Power Field-Effect Transistor, 7A I(D), 650V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| IPA50R190CE | Infineon | Power Field-Effect Transistor, 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| IPA65R400CE | Infineon | Power Field-Effect Transistor, 650V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| IPB60R280C6 | Infineon | Power Field-Effect Transistor, 13.8A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 500 |
| IPD220N06L3G | Infineon | Power Field-Effect Transistor, 30A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 500 |
| IPI80N04S4-03 | Infineon | Power Field-Effect Transistor, 80A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 500 |
| IRF3709ZSPBF | IR | Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 500 |
| IRF624SPBF | Vishay | Power Field-Effect Transistor, 4.4A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 500 |
| IRF830PBF | Vishay | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| IRFB4610PBF | IR | Power Field-Effect Transistor, 73A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| IRFB9N60A | Vishay | Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| IRFI634GPBF | Vishay | Power Field-Effect Transistor, 5.6A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| IRFI830GPBF | Vishay | Power Field-Effect Transistor, 3.1A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| IRFIBC20GPBF | Vishay | Power Field-Effect Transistor, 1.7A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| IRFIBE30G | Vishay | Power Field-Effect Transistor, 2.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| IRFPF30PBF | Vishay | Power Field-Effect Transistor, 3.6A I(D), 900V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 500 |
| IRFS7437PBF | Infineon | Power Field-Effect Transistor, 195A I(D), 40V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 500 |
| IRL2703PBF | Infineon | Power Field-Effect Transistor, 24A I(D), 30V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| IRL2703S | IR | Power Field-Effect Transistor, 24A I(D), 30V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 500 |
| IRL510SPBF | Vishay | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 500 |
| IRLR3636TRPBF | IR | Power Field-Effect Transistor, 50A I(D), 60V, 0.0083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 500 |
| IRLZ34 | Vishay | Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| IRLZ44ZL | IR | Power Field-Effect Transistor, 51A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 500 |
| NP24N06HLB | Renesas | Power Field-Effect Transistor, 24A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AB | 500 |
| NVMFS5C450NLWFT1G | Onsemi | Power Field-Effect Transistor, 110A I(D), 40V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 500 |
| PHX18NQ20T | NXP | Power Field-Effect Transistor, 8.2A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 500 |
| SI4880DY | Siliconix | Power Field-Effect Transistor, 13A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 500 |
| SIHD5N50D-E3 | Vishay | Power Field-Effect Transistor, 5.3A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 500 |
| SIHF18N50D-E3 | Vishay | Power Field-Effect Transistor, 18A I(D), 500V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| SIHG15N60E-GE3 | Vishay | Power Field-Effect Transistor, 15A I(D), 600V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 500 |
| SIHG17N60D-GE3 | Vishay | Power Field-Effect Transistor, 17A I(D), 600V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 500 |
| SIHG22N60AEL-GE3 | Vishay | Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 500 |
| SIHG24N65E-GE3 | Vishay | Power Field-Effect Transistor, 24A I(D), 650V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 500 |
| SIHG25N40D-GE3 | Vishay | Power Field-Effect Transistor, 25A I(D), 400V, 0.17ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 500 |
| SIHG25N50E-GE3 | Vishay | Power Field-Effect Transistor, 26A I(D), 500V, 0.145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 500 |
| SIHG30N60AEL-GE3 | Vishay | Power Field-Effect Transistor, 28A I(D), 600V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 500 |
| SIHG33N65E-GE3 | Vishay | Power Field-Effect Transistor, 32.4A I(D), 650V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 500 |
| SIHG460B-GE3 | Vishay | Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 500 |
| SIHG47N60AEL-GE3 | Vishay | Power Field-Effect Transistor, 47A I(D), 600V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 500 |
| SIHG73N60AEL-GE3 | Vishay | Power Field-Effect Transistor, 69A I(D), 600V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 500 |
| SIHG73N60E-GE3 | Vishay | Power Field-Effect Transistor, 73A I(D), 600V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 500 |
| SIHP12N60E-E3 | Vishay | Power Field-Effect Transistor, 12A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| SPP03N60C3 | Infineon | Power Field-Effect Transistor, 3.2A I(D), 600V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| SQP100P06-9M3L_GE3 | Vishay | Power Field-Effect Transistor, 100A I(D), 60V, 0.0093ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| STF16N60M2 | ST Micro | Power Field-Effect Transistor, 12A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 500 |
| STF22N60DM6 | ST Micro | Power Field-Effect Transistor | 500 |
| STF8N65M5 | ST Micro | Power Field-Effect Transistor, 7A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| STP10NK70ZFP | ST Micro | Power Field-Effect Transistor, 8.6A I(D), 700V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| STP16NF06FP | ST Micro | Power Field-Effect Transistor, 11A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| SUP40010EL-GE3 | Vishay | Power Field-Effect Transistor, 120A I(D), 40V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| SUP50N10-21P-GE3 | Vishay | Power Field-Effect Transistor, 50A I(D), 100V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| SUP70090E-GE3 | Vishay | Power Field-Effect Transistor, 50A I(D), 100V, 0.0089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 500 |
| TK22A10N1,S4X(S | Toshiba | Power Field-Effect Transistor, 52A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 500 |
| TK46A08N1,S4X(S | Toshiba | Power Field-Effect Transistor, 80A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 500 |
| TK6A60W,S4VX | Toshiba | Power Field-Effect Transistor | 500 |
| IPP055N03LG | Infineon | Power Field-Effect Transistor, 50A I(D), 30V, 0.0078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 497 |
| IRL540NPBF | Infineon | Power Field-Effect Transistor, 36A I(D), 100V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 496 |
| ZXM64P035L3 | Diodes | Power Field-Effect Transistor, 12A I(D), 35V, 0.105ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 496 |
| HUF75531SK8T | Fairchild Semi | Power Field-Effect Transistor, 6A I(D), 80V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 495 |
| IRF6725MTR1PBF | Infineon | Power Field-Effect Transistor, 170A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 495 |
| STF12N65M5 | ST Micro | Power Field-Effect Transistor, 8.5A I(D), 650V, 0.43ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 495 |
| ZVP0545GTA | Diodes | Power Field-Effect Transistor, 0.075A I(D), 450V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 495 |
| HP4410DY | Harris | Power Field-Effect Transistor, 10A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 490 |
| IRF7424PBF | Infineon | Power Field-Effect Transistor, 11A I(D), 30V, 0.0135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 488 |
| IRLU8743PBF | Infineon | Power Field-Effect Transistor, 160A I(D), 30V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 485 |
| SPP08P06P | Infineon | Power Field-Effect Transistor, 8.8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 485 |
| IPB054N08N3G | Infineon | Power Field-Effect Transistor, 80A I(D), 80V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 482 |
| BUK9629-100B | Philips Semi | Power Field-Effect Transistor, 46A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 481 |
| IRF2907ZLPBF | IR | Power Field-Effect Transistor, 160A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 481 |
| FDAF59N30 | Fairchild Semi | Power Field-Effect Transistor, 34A I(D), 300V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 480 |
| IRC840 | Vishay | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 480 |
| STW24NM60N | ST Micro | Power Field-Effect Transistor, 17A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 480 |
| STW6N90K5 | ST Micro | Power Field-Effect Transistor, 6A I(D), 900V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 480 |
| TK39N60W | Toshiba | Power Field-Effect Transistor, 38.8A I(D), 600V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 480 |
| AUIRF7316Q | Infineon | Power Field-Effect Transistor, 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 475 |
| BSZ063N04LS6ATMA1 | Infineon | Power Field-Effect Transistor, 40A I(D), 40V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 475 |
| BUZ307 | Infineon | Power Field-Effect Transistor, 3A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 | 475 |
| IRF3415S | Infineon | Power Field-Effect Transistor, 43A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 475 |
| IRF7303PBF | Infineon | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 475 |
| IRF7319PBF | Infineon | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 475 |
| IRF7905PBF | IR | Power Field-Effect Transistor, 8.9A I(D), 30V, 0.0171ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 475 |
| IRF9956 | Infineon | Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 475 |
| IRF7854PBF | IR | Power Field-Effect Transistor, 10A I(D), 80V, 0.0134ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 471 |
| STP23NM50N | ST Micro | Power Field-Effect Transistor, 17A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 471 |
| BUZ100SLE3045A | Infineon | Power Field-Effect Transistor, 70A I(D), 55V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 470 |
| BUZ32-E3045 | Infineon | Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 470 |
| FDB2552 | Onsemi | Power Field-Effect Transistor, 5A I(D), 150V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 470 |
| BUK453-60B | NXP | Power Field-Effect Transistor, 20A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 469 |
| IRF7301PBF | Infineon | Power Field-Effect Transistor, 5.2A I(D), 20V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 469 |
| BSP88L6327 | Infineon | Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 465 |
| BUZ171 | Siemens | Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 465 |
| IPB60R385CP | Infineon | Power Field-Effect Transistor, 9A I(D), 600V, 0.385ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 465 |
| IRF1010NSTRLPBF | IR | Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 465 |
| STP28N60M2 | ST Micro | Power Field-Effect Transistor, 22A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 465 |
| IRFR3706PBF | IR | Power Field-Effect Transistor, 30A I(D), 20V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 463 |
| ZXMN6A25GTA | Diodes | Power Field-Effect Transistor, 4.8A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 463 |
| 2SK1167-E | Renesas | Power Field-Effect Transistor, 15A I(D), 450V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 460 |
| BSP129H6327 | Infineon | Power Field-Effect Transistor, 0.35A I(D), 240V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 455 |
| SI7858ADP-T1-GE3 | Vishay | Power Field-Effect Transistor, 20A I(D), 12V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 455 |
| AUIRF1010ZL | Infineon | Power Field-Effect Transistor, 94A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 450 |
| AUIRF3710Z | Infineon | Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 450 |
| AUIRFR8403 | Infineon | Power Field-Effect Transistor, 100A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 450 |
| AUIRFS8405 | Infineon | Power Field-Effect Transistor, 120A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 450 |
| AUIRFU540Z | Infineon | Power Field-Effect Transistor, 35A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 450 |
| AUIRL1404Z | Infineon | Power Field-Effect Transistor, 160A I(D), 40V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 450 |
| AUIRLR2703 | Infineon | Power Field-Effect Transistor, 20A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 450 |
| AUIRLR3915 | Infineon | Power Field-Effect Transistor, 30A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 450 |
| AUIRLU3110Z | Infineon | Power Field-Effect Transistor, 42A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 450 |
| BUZ72L | Infineon | Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 450 |
| FCA36N60NF | Onsemi | Power Field-Effect Transistor, 34.9A I(D), 600V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 450 |
| FDA18N50 | Onsemi | Power Field-Effect Transistor, 19A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 450 |
| FDA20N50F | Onsemi | Power Field-Effect Transistor, 22A I(D), 500V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 450 |
| FQA40N25 | Onsemi | Power Field-Effect Transistor, 40A I(D), 250V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 450 |
| FQA6N70 | Fairchild Semi | Power Field-Effect Transistor, 6.4A I(D), 700V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 450 |
| FQP5N50C | Fairchild Semi | Power Field-Effect Transistor, 5A I(D), 500V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 450 |
| IRFB11N50APBF | Vishay | Power Field-Effect Transistor, 11A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 450 |
| IRFBC40SPBF | Vishay | Power Field-Effect Transistor, 6.2A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 450 |
| IRFP27N60KPBF | Vishay | Power Field-Effect Transistor, 27A I(D), 600V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 450 |
| IRFR3708PBF | Infineon | Power Field-Effect Transistor, 30A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 450 |
| IRFR4104 | Infineon | Power Field-Effect Transistor, 42A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 450 |
| IRFS7430PBF | Infineon | Power Field-Effect Transistor, 195A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 450 |
| IRFSL4020PBF | Infineon | Power Field-Effect Transistor, 18A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 450 |
| IRFZ34EPBF | IR | Power Field-Effect Transistor, 28A I(D), 60V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 450 |
| IRL540 | Vishay | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 450 |
| IRLD024PBF | Vishay | Power Field-Effect Transistor, 2.5A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 450 |
| IRLZ24PBF | Vishay | Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 450 |
| PSMN005-75P | Nexperia | Power Field-Effect Transistor, 75A I(D), 75V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 450 |
| RFP8N18L | Harris | Power Field-Effect Transistor, 8A I(D), 180V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 450 |
| SCT2H12NZGC11 | Rohm | Power Field-Effect Transistor, 3.7A I(D), 1700V, 1.5ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET | 450 |
| STD3NM60-1 | ST Micro | Power Field-Effect Transistor, 3A I(D), 600V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 450 |
| STF10N65K3 | ST Micro | Power Field-Effect Transistor, 11A I(D), 650V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 450 |
| STF21NM50N | ST Micro | Power Field-Effect Transistor, 18A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 450 |
| STF26NM60N | ST Micro | Power Field-Effect Transistor, 20A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 450 |
| STP36NF06L | ST Micro | Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 450 |
| STW7NK90Z | ST Micro | Power Field-Effect Transistor, 5.8A I(D), 900V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 450 |
| STY80NM60N | ST Micro | Power Field-Effect Transistor, 80A I(D), 600V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 450 |
| TK7A60W | Toshiba | Power Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 450 |
| FQP17P10 | Onsemi | Power Field-Effect Transistor, 16.5A I(D), 100V, 0.19ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 447 |
| BUK9624-55 | NXP | Power Field-Effect Transistor, 45A I(D), 55V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 446 |
| IRFI540GPBF | Vishay | Power Field-Effect Transistor, 17A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 446 |
| IRFI1010NPBF | Infineon | Power Field-Effect Transistor, 49A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 445 |
| SPD02N60C3 | Infineon | Power Field-Effect Transistor, 1.8A I(D), 600V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 445 |
| SI9955DY | Siliconix | Power Field-Effect Transistor, 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 443 |
| BUK445-600B | NXP | Power Field-Effect Transistor, 2.2A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 442 |
| 2SK2220-E | Renesas | Power Field-Effect Transistor, 8A I(D), 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 440 |
| AUIRFR5410 | Infineon | Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 440 |
| IRF7530PBF | Infineon | Power Field-Effect Transistor, 5.4A I(D), 20V, 0.03ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 440 |
| SI7790DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 50A I(D), 40V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 440 |
| STB6NC90ZT4 | ST Micro | Power Field-Effect Transistor, 5.4A I(D), 900V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 440 |
| STW45N65M5 | ST Micro | Power Field-Effect Transistor, 35A I(D), 650V, 0.078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 440 |
| IXTH500N04T2 | Littelfuse | Power Field-Effect Transistor, 500A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | 438 |
| SUB75P05-08 | Siliconix | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 438 |
| HUF75639P3 | Onsemi | Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 433 |
| IXFN64N50P | Littelfuse | Power Field-Effect Transistor, 61A I(D), 500V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 431 |
| IRF9540NPBF | Infineon | Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 430 |
| NDT3055L | Onsemi | Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 430 |
| NVMFS5C612NLWFAFT1G | Onsemi | Power Field-Effect Transistor, 250A I(D), 60V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 430 |
| ZVNL110GTA | Diodes | Power Field-Effect Transistor, 0.6A I(D), 100V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 430 |
| FDS8958A_F085 | Fairchild Semi | Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 429 |
| SIHG47N60E-GE3 | Vishay | Power Field-Effect Transistor, 47A I(D), 600V, 0.064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 425 |
| IRF740PBF | Siliconix | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 422 |
| FDA70N20 | Onsemi | Power Field-Effect Transistor, 70A I(D), 200V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 420 |
| HUF76139S3ST | Fairchild Semi | Power Field-Effect Transistor, 75A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 420 |
| NDB505AE | National | Power Field-Effect Transistor, 26A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 415 |
| BUZ341 | Infineon | Power Field-Effect Transistor, 33A I(D), 200V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA | 411 |
| IRF9395MTR1PBF | IR | Power Field-Effect Transistor, 14A I(D), 30V, 0.007ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 407 |
| CSD16323Q3 | TI | Power Field-Effect Transistor, 21A I(D), 25V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 406 |
| IRF3711ZPBF | IR | Power Field-Effect Transistor, 30A I(D), 20V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 405 |
| IRFP22N50APBF | Vishay | Power Field-Effect Transistor, 22A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 402 |
| 2SK2173 | Toshiba | Power Field-Effect Transistor, 50A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 400 |
| AUIRF3805L-7P | Infineon | Power Field-Effect Transistor, 160A I(D), 55V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 400 |
| AUIRLI2505 | Infineon | Power Field-Effect Transistor, 58A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 400 |
| FCP260N60E | Onsemi | Power Field-Effect Transistor, 15A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 400 |
| FDP120N10 | Onsemi | Power Field-Effect Transistor, 74A I(D), 100V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| FQPF45N15V2 | Onsemi | Power Field-Effect Transistor, 45A I(D), 150V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| IRF530 | National | Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| IRF7832 | Infineon | Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 400 |
| IRF840ASPBF | Vishay | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 400 |
| IRF9630SPBF | Vishay | Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 400 |
| IRF9Z30 | Vishay | Power Field-Effect Transistor, 18A I(D), 50V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| IRF9Z30PBF | Vishay | Power Field-Effect Transistor, 18A I(D), 50V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| IRFH5004TR2PBF | IR | Power Field-Effect Transistor, 28A I(D), 40V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 400 |
| IRFH5110TR2PBF | IR | Power Field-Effect Transistor, 11A I(D), 100V, 0.0124ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 400 |
| IRFH5215TR2PBF | IR | Power Field-Effect Transistor, 5A I(D), 150V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 400 |
| IRFH5302DTR2PBF | IR | Power Field-Effect Transistor, 29A I(D), 30V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 400 |
| IRFH7107TR2PBF | IR | Power Field-Effect Transistor | 400 |
| IRFH7440TR2PBF | IR | Power Field-Effect Transistor, 85A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 400 |
| IRFH8324TR2PBF | IR | Power Field-Effect Transistor, 23A I(D), 30V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 400 |
| IRFP2907ZPBF | Infineon | Power Field-Effect Transistor, 90A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 400 |
| IRFP448 | Vishay | Power Field-Effect Transistor, 11A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 400 |
| IRFPS40N60KPBF | Vishay | Power Field-Effect Transistor, 40A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 400 |
| IRFS3307PBF | IR | Power Field-Effect Transistor, 75A I(D), 75V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 400 |
| IRFS33N15DTRLP | Infineon | Power Field-Effect Transistor, 33A I(D), 150V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 400 |
| IRFSL4321PBF | Infineon | Power Field-Effect Transistor, 75A I(D), 150V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 400 |
| IRFZ46ZSPBF | Infineon | Power Field-Effect Transistor, 51A I(D), 55V, 0.0136ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 400 |
| IRFZ48NPBF | IR | Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| IRLHM630TR2PBF | IR | Power Field-Effect Transistor, 21A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 400 |
| IXTP3N60P | IXYS | Power Field-Effect Transistor, 3A I(D), 600V, 2.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| MTP3055VL | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| R6012FNX | Rohm | Power Field-Effect Transistor, 12A I(D), 600V, 0.51ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| R6020FNX | Rohm | Power Field-Effect Transistor, 20A I(D), 600V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| SIHB22N60S-GE3 | Vishay | Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 400 |
| SIHP22N60S-E3 | Vishay | Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| SIHS36N50D-E3 | Vishay | Power Field-Effect Transistor, 36A I(D), 500V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-274AA | 400 |
| STF11NM60ND | ST Micro | Power Field-Effect Transistor, 10A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| STF13NM60N | ST Micro | Power Field-Effect Transistor, 11A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| STF15N65M5 | ST Micro | Power Field-Effect Transistor, 11A I(D), 650V, 0.34ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| STP14NM50N | ST Micro | Power Field-Effect Transistor, 12A I(D), 500V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| STP30NF20 | ST Micro | Power Field-Effect Transistor, 30A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 400 |
| STW20NK50Z | ST Micro | Power Field-Effect Transistor, 17A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 400 |
| SUP90140E-GE3 | Vishay | Power Field-Effect Transistor, 90A I(D), 200V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| TK34A10N1,S4X(S | Toshiba | Power Field-Effect Transistor, 75A I(D), 100V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 400 |
| IRF6218STRLPBF | Infineon | Power Field-Effect Transistor, 27A I(D), 150V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 399 |
| IPB117N20NFDATMA1 | Infineon | Power Field-Effect Transistor, 84A I(D), 200V, 0.0117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 398 |
| BUZ103AL | Infineon | Power Field-Effect Transistor, 35A I(D), 50V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 396 |
| IRF9Z34NSTRLPBF | Infineon | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 395 |
| IRFR224TR | Vishay | Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 395 |
| PSMN4R0-30YLD | Nexperia | Power Field-Effect Transistor, 95A I(D), 30V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 | 395 |
| STB75NF20 | ST Micro | Power Field-Effect Transistor, 75A I(D), 200V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 395 |
| TK100A06N1 | Toshiba | Power Field-Effect Transistor, 100A I(D), 60V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 395 |
| SUP75N08-09L-E3 | Siliconix | Power Field-Effect Transistor, 75A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 394 |
| IRF540NSPBF | IR | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 393 |
| IRF7811A | IR | Power Field-Effect Transistor, 11A I(D), 28V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 390 |
| STW62N65M5 | ST Micro | Power Field-Effect Transistor, 46A I(D), 650V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 390 |
| TK12E60W | Toshiba | Power Field-Effect Transistor, 11.5A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 390 |
| BSO301SPH | Infineon | Power Field-Effect Transistor, 12.6A I(D), 30V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 388 |
| ZVN4206GTA | Diodes | Power Field-Effect Transistor, 1A I(D), 60V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 388 |
| STB55NF06LT4 | ST Micro | Power Field-Effect Transistor, 55A I(D), 60V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 385 |
| STP220N6F7 | ST Micro | Power Field-Effect Transistor | 385 |
| VNP35N07-E | ST Micro | Power Field-Effect Transistor, 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 383 |
| IRFR120NTR | IR | Power Field-Effect Transistor, 9.1A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 381 |
| BSP89 | Infineon | Power Field-Effect Transistor, 0.35A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 380 |
| FDB075N15A | Onsemi | Power Field-Effect Transistor, 120A I(D), 150V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 380 |
| IRF7403PBF | Infineon | Power Field-Effect Transistor, 8.5A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 380 |
| AUIRFR3806 | Infineon | Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 375 |
| BSC110N15NS5ATMA1 | Infineon | Power Field-Effect Transistor, 76A I(D), 150V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 375 |
| BUZ342 | Infineon | Power Field-Effect Transistor, 60A I(D), 50V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA | 375 |
| FDB3652 | Onsemi | Power Field-Effect Transistor, 9A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 375 |
| IRFR3303 | Infineon | Power Field-Effect Transistor, 20A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 375 |
| IRFR5410 | Infineon | Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 375 |
| IRFU1010Z | IR | Power Field-Effect Transistor, 42A I(D), 55V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 375 |
| IRLU3303 | IR | Power Field-Effect Transistor, 35A I(D), 30V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 375 |
| NDS8958 | Fairchild Semi | Power Field-Effect Transistor, 5.3A I(D), 30V, 0.035ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 375 |
| IRF7379QPBF | Infineon | Power Field-Effect Transistor, 5.8A I(D), 30V, 0.045ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 370 |
| BSP300E6327 | Infineon | Power Field-Effect Transistor, 0.19A I(D), 800V, 20ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 365 |
| FQB55N10TM | Onsemi | Power Field-Effect Transistor, 55A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 365 |
| MMQ60R190PTH | Magnachip | Power Field-Effect Transistor | 360 |
| STW42N60M2-EP | ST Micro | Power Field-Effect Transistor | 360 |
| SUD15N06-90L-E3 | Vishay | Power Field-Effect Transistor, 15A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 360 |
| IRFU9024 | Siliconix | Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 358 |
| SQM47N10-24L-GE3 | Vishay | Power Field-Effect Transistor, 47A I(D), 100V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 356 |
| IRFS7434TRL7PP | IR | Power Field-Effect Transistor, 240A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 355 |
| 2SK2605 | Toshiba | Power Field-Effect Transistor, 5A I(D), 800V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 350 |
| AUIRF1404ZS | Infineon | Power Field-Effect Transistor, 160A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 350 |
| AUIRF3504 | Infineon | Power Field-Effect Transistor, 87A I(D), 40V, 0.0092ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 350 |
| AUIRF4104 | Infineon | Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 350 |
| AUIRFB8407 | Infineon | Power Field-Effect Transistor, 195A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 350 |
| AUIRFZ24NS | Infineon | Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 350 |
| AUIRFZ44VZS | Infineon | Power Field-Effect Transistor, 57A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 350 |
| AUIRFZ48N | Infineon | Power Field-Effect Transistor | 350 |
| AUIRL3705ZS | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 350 |
| AUIRLS3114Z | Infineon | Power Field-Effect Transistor, 56A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 350 |
| BSZ150N10LS3GATMA1 | Infineon | Power Field-Effect Transistor, 40A I(D), 100V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 350 |
| FDP8896 | Onsemi | Power Field-Effect Transistor, 80A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 350 |
| FQPF20N06L | Onsemi | Power Field-Effect Transistor, 15.7A I(D), 60V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 350 |
| IRF3305PBF | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 350 |
| IRF9Z34PBF | Vishay | Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 350 |
| IRFIZ44G | Vishay | Power Field-Effect Transistor, 30A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 350 |
| IRFPS37N50APBF | Vishay | Power Field-Effect Transistor, 36A I(D), 500V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 350 |
| IRL510 | Vishay | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 350 |
| IRLZ24NPBF | Infineon | Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 350 |
| NTP2955G | Onsemi | Power Field-Effect Transistor, 2.4A I(D), 60V, 0.196ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 350 |
| RF1S70N06SM | Harris | Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 350 |
| STF26N60DM6 | ST Micro | Power Field-Effect Transistor | 350 |
| STP13NK60ZFP | ST Micro | Power Field-Effect Transistor, 13A I(D), 600V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 350 |
| STP60N05-14 | ST Micro | Power Field-Effect Transistor, 60A I(D), 50V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 350 |
| STP60NF06 | ST Micro | Power Field-Effect Transistor, 60A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 350 |
| STP80N10F7 | ST Micro | Power Field-Effect Transistor, 80A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 350 |
| TK14A65W | Toshiba | Power Field-Effect Transistor, 13.7A I(D), 650V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 350 |
| TK32E12N1 | Toshiba | Power Field-Effect Transistor, 32A I(D), 120V, 0.0138ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 350 |
| TK5A60W | Toshiba | Power Field-Effect Transistor, 5.4A I(D), 600V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 350 |
| SUP75N03-04-E3 | Vishay | Power Field-Effect Transistor, 75A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 346 |
| IRF6218PBF | Infineon | Power Field-Effect Transistor, 27A I(D), 150V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 345 |
| IRFP4410ZPBF | Infineon | Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 345 |
| IRFS4615PBF | Infineon | Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 345 |
| STB35NF10T4 | ST Micro | Power Field-Effect Transistor, 40A I(D), 100V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 345 |
| SUB45N03-13L-E3 | Vishay | Power Field-Effect Transistor, 45A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 345 |
| IPB60R055CFD7ATMA1 | Infineon | Power Field-Effect Transistor, 38A I(D), 600V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 340 |
| SI4442DY-T1 | Vishay | Power Field-Effect Transistor, 15A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 340 |
| SUM50N06-16L-E3 | Vishay | Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 340 |
| IRF7210 | IR | Power Field-Effect Transistor, 16A I(D), 12V, 0.007ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 339 |
| SIHP22N60E-E3 | Vishay | Power Field-Effect Transistor, 21A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 334 |
| FQP13N06L | Onsemi | Power Field-Effect Transistor, 13.6A I(D), 60V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 331 |
| AUIRFS8409-7P | Infineon | Power Field-Effect Transistor, 240A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 330 |
| CSD19538Q3AT | TI | Power Field-Effect Transistor, 4.9A I(D), 100V, 0.072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 330 |
| IRF3703PBF | Infineon | Power Field-Effect Transistor, 75A I(D), 30V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 330 |
| IRFU310PBF | Vishay | Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 330 |
| RJK0305DPB-00-J0 | Renesas | Power Field-Effect Transistor, 30A I(D), 30V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 330 |
| STW13N95K3 | ST Micro | Power Field-Effect Transistor, 10A I(D), 950V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 330 |
| STY60NM50 | ST Micro | Power Field-Effect Transistor, 60A I(D), 500V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 330 |
| IPP110N20NA | Infineon | Power Field-Effect Transistor, 88A I(D), 200V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 328 |
| 2SJ377TE16L | Toshiba | Power Field-Effect Transistor, 5A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 325 |
| IRLZ24NSPBF | Infineon | Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 325 |
| IPW60R045CP | Infineon | Power Field-Effect Transistor, 60A I(D), 600V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 324 |
| IRFB3306GPBF | Infineon | Power Field-Effect Transistor, 120A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 324 |
| STW5NB100 | ST Micro | Power Field-Effect Transistor, 4.3A I(D), 1000V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 323 |
| SUP75N06-08 | Vishay | Power Field-Effect Transistor, 75A I(D), 60V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 322 |
| BUZ50A | Infineon | Power Field-Effect Transistor, 2.5A I(D), 1000V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 320 |
| RFD16N05LSM9A | Harris | Power Field-Effect Transistor, 16A I(D), 50V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 320 |
| STD2NC60 | ST Micro | Power Field-Effect Transistor, 2A I(D), 600V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 320 |
| IRFPG40PBF | Vishay | Power Field-Effect Transistor, 4.3A I(D), 1000V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 319 |
| IXTP3N120 | IXYS | Power Field-Effect Transistor, 3A I(D), 1200V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 311 |
| BSP296L6327 | Infineon | Power Field-Effect Transistor, 1.1A I(D), 100V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 310 |
| IRLR6225TRPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 310 |
| ZXMS6005DGTA | Diodes | Power Field-Effect Transistor, 60V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 310 |
| IRL540NS | Infineon | Power Field-Effect Transistor, 36A I(D), 100V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 308 |
| IPD170N04NG | Infineon | Power Field-Effect Transistor, 30A I(D), 40V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 305 |
| IPP80N06S2L-11 | Infineon | Power Field-Effect Transistor, 80A I(D), 55V, 0.0147ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 305 |
| BUZ74A | Infineon | Power Field-Effect Transistor, 2.1A I(D), 500V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 302 |
| AUIRF2804WL | Infineon | Power Field-Effect Transistor, 240A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 300 |
| AUIRFS4310 | Infineon | Power Field-Effect Transistor, 75A I(D), 100V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 300 |
| C3M0021120K | Wolfspeed | Power Field-Effect Transistor, 100A I(D), 1200V, 0.0288ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247 | 300 |
| FDP047AN08A0 | Onsemi | Power Field-Effect Transistor, 80A I(D), 75V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| FQP45N03L | Fairchild Semi | Power Field-Effect Transistor, 41A I(D), 30V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| FQP65N06 | Onsemi | Power Field-Effect Transistor, 65A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| FQPF32N20C | Onsemi | Power Field-Effect Transistor, 28A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| IPD50N04S4-08 | Infineon | Power Field-Effect Transistor, 50A I(D), 40V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 300 |
| IPP26CNE8NG | Infineon | Power Field-Effect Transistor, 35A I(D), 85V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| IPP60R165CP | Infineon | Power Field-Effect Transistor, 21A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 300 |
| IRF3007PBF | Infineon | Power Field-Effect Transistor, 75A I(D), 75V, 0.0126ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| IRF3415L | IR | Power Field-Effect Transistor, 43A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 300 |
| IRF6215S | Infineon | Power Field-Effect Transistor, 13A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 300 |
| IRF730SPBF | Vishay | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 300 |
| IRF9540NSHR | IR | Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 300 |
| IRFB3207ZGPBF | Infineon | Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| IRFH5006TR2PBF | IR | Power Field-Effect Transistor, 21A I(D), 60V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 300 |
| IRFI520G | Siliconix | Power Field-Effect Transistor, 7.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| IRFIBF20GPBF | Vishay | Power Field-Effect Transistor, 1.2A I(D), 900V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| IRFP350LCPBF | Vishay | Power Field-Effect Transistor, 18A I(D), 400V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 300 |
| IRFS3207PBF | Infineon | Power Field-Effect Transistor, 75A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 300 |
| IRFS4229PBF | Infineon | Power Field-Effect Transistor, 45A I(D), 250V, 0.048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 300 |
| IRFSL7762PBF | Infineon | Power Field-Effect Transistor | 300 |
| IRFZ46ZPBF | Infineon | Power Field-Effect Transistor, 51A I(D), 55V, 0.0136ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| IRL3705N | Infineon | Power Field-Effect Transistor, 89A I(D), 55V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| IRL3705ZSPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 300 |
| IRL520NS | Infineon | Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 300 |
| IRLR7833PBF | Infineon | Power Field-Effect Transistor, 30A I(D), 30V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 300 |
| IRLR7843PBF | Infineon | Power Field-Effect Transistor, 30A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 300 |
| MDF3N50 | Magnachip | Power Field-Effect Transistor | 300 |
| NTMFS5C628NLT1G | Onsemi | Power Field-Effect Transistor, 150A I(D), 60V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 300 |
| SFP9530 | Onsemi | Power Field-Effect Transistor, 10.5A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| SPP06N80C3 | Infineon | Power Field-Effect Transistor, 6A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| SPP80N06S2-09 | Infineon | Power Field-Effect Transistor, 80A I(D), 55V, 0.0091ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| STF9NM60N | ST Micro | Power Field-Effect Transistor, 6.5A I(D), 600V, 0.745ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| STFW45N65M5 | ST Micro | Power Field-Effect Transistor, 35A I(D), 650V, 0.078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 300 |
| STP42N65M5 | ST Micro | Power Field-Effect Transistor, 33A I(D), 650V, 0.079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| STP5NK80ZFP | ST Micro | Power Field-Effect Transistor, 4.3A I(D), 800V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 300 |
| STW56N65DM2 | ST Micro | Power Field-Effect Transistor | 300 |
| STW7N105K5 | ST Micro | Power Field-Effect Transistor, 4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 300 |
| TK20E60W,S1VX | Toshiba | Power Field-Effect Transistor | 300 |
| TK46E08N1 | Toshiba | Power Field-Effect Transistor, 46A I(D), 80V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| TK56A12N1 | Toshiba | Power Field-Effect Transistor, 100A I(D), 120V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 300 |
| IRFI4024H-117P | IR | Power Field-Effect Transistor, 11A I(D), 55V, 0.06ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 299 |
| SSH70N10A | Fairchild Semi | Power Field-Effect Transistor, 70A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 299 |
| FDB031N08 | Onsemi | Power Field-Effect Transistor, 120A I(D), 75V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 298 |
| STW15NA50 | ST Micro | Power Field-Effect Transistor, 14.6A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 296 |
| NTD5406NT4G | Onsemi | Power Field-Effect Transistor, 12.2A I(D), 40V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 294 |
| IRF2805SPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 293 |
| IRFU9024PBF | Vishay | Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 293 |
| FDB047N10 | Fairchild Semi | Power Field-Effect Transistor, 120A I(D), 100V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 290 |
| IRFB20N50KPBF | Vishay | Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 290 |
| SIR698DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 7.5A I(D), 100V, 0.195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 290 |
| STB30NF10T4 | ST Micro | Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 290 |
| IRF9317PBF | Infineon | Power Field-Effect Transistor, 16A I(D), 30V, 0.0066ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 289 |
| IRFI540N | Infineon | Power Field-Effect Transistor, 20A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 289 |
| AO3422 | Alpha Omega | Power Field-Effect Transistor, 55V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 285 |
| AUIRF7319Q | Infineon | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 285 |
| CSD17577Q3A | TI | Power Field-Effect Transistor, 35A I(D), 30V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 285 |
| IRF7316QPBF | Infineon | Power Field-Effect Transistor, 4.9A I(D), 30V, 0.058ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 285 |
| IRF7353D1PBF | IR | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 285 |
| IRF7507PBF | Infineon | Power Field-Effect Transistor, 2.4A I(D), 20V, 0.14ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 285 |
| 2SK1859-E | Renesas | Power Field-Effect Transistor, 6A I(D), 900V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 281 |
| BUZ32L3045A | Infineon | Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 280 |
| STW34NM60N | ST Micro | Power Field-Effect Transistor, 29A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 280 |
| AUIRFP1405 | Infineon | Power Field-Effect Transistor, 95A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 275 |
| FDB28N30TM | Onsemi | Power Field-Effect Transistor, 28A I(D), 300V, 0.129ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 275 |
| FDP036N10A | Onsemi | Power Field-Effect Transistor, 120A I(D), 100V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 275 |
| IRFP7430PBF | Infineon | Power Field-Effect Transistor, 195A I(D), 40V, 0.0013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 275 |
| SIHG20N50C-E3 | Vishay | Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 275 |
| SPB70N10L | Infineon | Power Field-Effect Transistor, 70A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 275 |
| SQM50P08-25L_GE3 | Vishay | Power Field-Effect Transistor, 50A I(D), 80V, 0.025ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 275 |
| IRFBG30 | Vishay | Power Field-Effect Transistor, 3.1A I(D), 1000V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 272 |
| STW21NM50N | ST Micro | Power Field-Effect Transistor, 18A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 271 |
| FDA28N50 | Onsemi | Power Field-Effect Transistor, 28A I(D), 500V, 0.155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 270 |
| IRLL014NTR | IR | Power Field-Effect Transistor, 2A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 270 |
| IXTH7P50 | IXYS | Power Field-Effect Transistor, 7A I(D), 500V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | 270 |
| STW12NK95Z | ST Micro | Power Field-Effect Transistor, 10A I(D), 950V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 270 |
| STW35N65M5 | ST Micro | Power Field-Effect Transistor, 27A I(D), 650V, 0.098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 270 |
| STW48NM60N | ST Micro | Power Field-Effect Transistor, 39A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 270 |
| IRFR9120NPBF | Infineon | Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 266 |
| IRFS4115-7PPBF | Infineon | Power Field-Effect Transistor, 105A I(D), 150V, 0.0118ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CB | 266 |
| STB40NF20 | ST Micro | Power Field-Effect Transistor, 40A I(D), 200V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 266 |
| STN2NF10 | ST Micro | Power Field-Effect Transistor, 2A I(D), 100V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 265 |
| AUIRF9952Q | Infineon | Power Field-Effect Transistor, 2.8A I(D), 30V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 264 |
| IRFS3206TRRPBF | Infineon | Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 264 |
| RFD15P05SM | Harris | Power Field-Effect Transistor, 15A I(D), 50V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 264 |
| SPP07N60C3 | Infineon | Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 264 |
| IRFR110 | Vishay | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 263 |
| IRFZ44NPBF | Infineon | Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 263 |
| FQB12P20TM | Fairchild Semi | Power Field-Effect Transistor, 11.5A I(D), 200V, 0.47ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 260 |
| STB80NF55-08T4 | ST Micro | Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 260 |
| IRF7832PBF | Infineon | Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 256 |
| ZVN2110GTA | Diodes | Power Field-Effect Transistor, 0.5A I(D), 100V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 254 |
| ZXMS6001N3TA | Diodes | Power Field-Effect Transistor, 1.1A I(D), 60V, 0.675ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 254 |
| 2SK2733 | Toshiba | Power Field-Effect Transistor, 1A I(D), 900V, 9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 250 |
| AUIRF1404S | Infineon | Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 250 |
| AUIRF1404ZL | Infineon | Power Field-Effect Transistor, 160A I(D), 40V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 250 |
| AUIRF1405ZL | Infineon | Power Field-Effect Transistor, 150A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 250 |
| AUIRF2804 | Infineon | Power Field-Effect Transistor, 270A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 250 |
| AUIRF2804L | Infineon | Power Field-Effect Transistor, 270A I(D), 40V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 250 |
| AUIRF2804S | Infineon | Power Field-Effect Transistor, 270A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 250 |
| AUIRF3007 | Infineon | Power Field-Effect Transistor, 75A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 250 |
| BUZ31 | Infineon | Power Field-Effect Transistor, 14.5A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 250 |
| CSD25402Q3AT | TI | Power Field-Effect Transistor, -72A I(D), 20V, 0.0159ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 250 |
| FDMC8321L | Onsemi | Power Field-Effect Transistor, 22A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA | 250 |
| IPD90N03S4L03ATMA1 | Infineon | Power Field-Effect Transistor, 90A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 250 |
| IRF3708PBF | Infineon | Power Field-Effect Transistor, 62A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 250 |
| IRF3805L-7PPBF | IR | Power Field-Effect Transistor, 160A I(D), 55V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263CA | 250 |
| IRF460 | NJ Semi | Power Field-Effect Transistor, 21A I(D), 500V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 250 |
| IRF9Z34S | Vishay | Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 250 |
| IRFB7740PBF | Infineon | Power Field-Effect Transistor, 87A I(D), 75V, 0.0073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 250 |
| IRFBE20 | Vishay | Power Field-Effect Transistor, 1.8A I(D), 800V, 6.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 250 |
| IRFP150 | Vishay | Power Field-Effect Transistor, 41A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 250 |
| IRFSL4615PBF | IR | Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 250 |
| IRL1404PBF | Infineon | Power Field-Effect Transistor, 160A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 250 |
| IRL2910LPBF | IR | Power Field-Effect Transistor, 55A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 250 |
| IRL510S | Vishay | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 250 |
| IRLZ24 | Vishay | Power Field-Effect Transistor, 17A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 250 |
| MDF18N50BTH | Magnachip | Power Field-Effect Transistor | 250 |
| NTB6411ANG | Onsemi | Power Field-Effect Transistor, 72A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 250 |
| SIHP10N40D-E3 | Vishay | Power Field-Effect Transistor, 10A I(D), 400V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 250 |
| SPW47N60C3 | Infineon | Power Field-Effect Transistor, 47A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 250 |
| TK13A50DA | Toshiba | Power Field-Effect Transistor, 12.5A I(D), 500V, 0.47ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 250 |
| TK15D60U | Toshiba | Power Field-Effect Transistor, 15A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 250 |
| TK40A10N1,S4X(S | Toshiba | Power Field-Effect Transistor, 90A I(D), 100V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 250 |
| TK56E12N1 | Toshiba | Power Field-Effect Transistor, 100A I(D), 120V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 250 |
| TK6A80E | Toshiba | Power Field-Effect Transistor, 6A I(D), 800V, 1.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 250 |
| IRL640SPBF | Vishay | Power Field-Effect Transistor, 17A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 247 |
| NTF3055-100T1G | Onsemi | Power Field-Effect Transistor | 245 |
| STW43NM60N | ST Micro | Power Field-Effect Transistor, 35A I(D), 600V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 243 |
| BUK9518-55 | NXP | Power Field-Effect Transistor, 57A I(D), 55V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 242 |
| BSP372L6327 | Infineon | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 241 |
| 2SK3748-1E | Sanyo Semi | Power Field-Effect Transistor | 240 |
| FCH20N60 | Fairchild Semi | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | 240 |
| FQAF11N90 | Fairchild Semi | Power Field-Effect Transistor, 7.2A I(D), 900V, 0.96ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 240 |
| SI7450DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 3.2A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 240 |
| BUZ21L | Infineon | Power Field-Effect Transistor, 21A I(D), 100V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 239 |
| IRF1503PBF | Infineon | Power Field-Effect Transistor, 75A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 239 |
| IRL520NPBF | Infineon | Power Field-Effect Transistor, 10A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 235 |
| IRLR120N | Fairchild Semi | Power Field-Effect Transistor, 8.4A I(D), 100V, 0.22ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 235 |
| IRL540PBF | Vishay | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 234 |
| IRF7103PBF | Infineon | Power Field-Effect Transistor, 3A I(D), 50V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 231 |
| IRF2907ZSTRLPBF | Infineon | Power Field-Effect Transistor, 160A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 230 |
| IRFD120PBF | Vishay | Power Field-Effect Transistor, 1.3A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 230 |
| IRFS4410PBF | Infineon | Power Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 230 |
| BSP319E6327 | Infineon | Power Field-Effect Transistor, 3.8A I(D), 50V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 229 |
| IRLU3110ZPBF | Infineon | Power Field-Effect Transistor, 63A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 228 |
| SPP20N60S5 | Infineon | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 227 |
| STHV82FI | ST Micro | Power Field-Effect Transistor, 3.6A I(D), 800V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 | 226 |
| IRFL9014PBF | Vishay | Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 225 |
| IRFR7446PBF | Infineon | Power Field-Effect Transistor, 56A I(D), 40V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 225 |
| IRFU120N | Infineon | Power Field-Effect Transistor, 9.1A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 225 |
| NTD2955-1G | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 225 |
| IRF8707TRPBF | IR | Power Field-Effect Transistor, 11A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 220 |
| IRFB4710 | Infineon | Power Field-Effect Transistor, 75A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 220 |
| IRFU224PBF | Vishay | Power Field-Effect Transistor, 3.8A I(D), 250V, 1.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 220 |
| ZVP2110G | Diodes | Power Field-Effect Transistor, 0.31A I(D), 100V, 8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 220 |
| IRF7202 | IR | Power Field-Effect Transistor, 2.5A I(D), 20V, 0.25ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 218 |
| IPP072N10N3G | Infineon | Power Field-Effect Transistor, 80A I(D), 100V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 217 |
| MTB20N20ET4 | Onsemi | Power Field-Effect Transistor, 20A I(D), 200V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 217 |
| BUZ111SE3045A | Infineon | Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 215 |
| FQA30N40 | Onsemi | Power Field-Effect Transistor, 30A I(D), 400V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 215 |
| IRFW640B | Fairchild Semi | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 215 |
| SPD06N60C3 | Infineon | Power Field-Effect Transistor, 6.2A I(D), 650V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 215 |
| STD8N65M5 | ST Micro | Power Field-Effect Transistor, 7A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 215 |
| STD16NE06L | ST Micro | Power Field-Effect Transistor, 16A I(D), 60V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 214 |
| FDB070AN06A0 | Onsemi | Power Field-Effect Transistor, 15A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 213 |
| MTD20N03HDL | Onsemi | Power Field-Effect Transistor, 20A I(D), 30V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 210 |
| STW57N65M5 | ST Micro | Power Field-Effect Transistor | 210 |
| IXTA180N10T | Littelfuse | Power Field-Effect Transistor, 180A I(D), 100V, 0.0064ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 209 |
| MTW32N20E | Onsemi | Power Field-Effect Transistor, 32A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AE | 208 |
| IRF7105 | IR | Power Field-Effect Transistor, 3.5A I(D), 25V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 206 |
| IRFU5410PBF | Infineon | Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 203 |
| IRFZ48STRLPBF | Vishay | Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 203 |
| AUIRF1324 | Infineon | Power Field-Effect Transistor, 195A I(D), 24V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| AUIRF1404 | Infineon | Power Field-Effect Transistor, 160A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| AUIRF2903Z | Infineon | Power Field-Effect Transistor, 160A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| AUIRF2903ZL | Infineon | Power Field-Effect Transistor, 160A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 200 |
| AUIRF2903ZS | Infineon | Power Field-Effect Transistor, 160A I(D), 30V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 200 |
| AUIRF3205 | Infineon | Power Field-Effect Transistor, 75A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 200 |
| AUIRF3805 | Infineon | Power Field-Effect Transistor, 160A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| AUIRF3805S | Infineon | Power Field-Effect Transistor, 160A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 200 |
| AUIRFS4310Z | Infineon | Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 200 |
| AUIRFSL3206 | Infineon | Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 200 |
| AUIRL1404S | Infineon | Power Field-Effect Transistor, 160A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 200 |
| BSP125E6433 | Infineon | Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 200 |
| FCI7N60 | Onsemi | Power Field-Effect Transistor, 7A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 200 |
| FCP13N60N | Onsemi | Power Field-Effect Transistor, 13A I(D), 600V, 0.258ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| FDB082N15A | Onsemi | Power Field-Effect Transistor, 105A I(D), 150V, 0.0082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 200 |
| FDP038AN06A0 | Onsemi | Power Field-Effect Transistor, 17A I(D), 60V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| FQPF7N80C | Onsemi | Power Field-Effect Transistor, 6.6A I(D), 800V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| IPD50N04S4-10 | Infineon | Power Field-Effect Transistor, 50A I(D), 40V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 200 |
| IRF1405ZS-7P | Infineon | Power Field-Effect Transistor, 120A I(D), 55V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 200 |
| IRF4104L | IR | Power Field-Effect Transistor, 75A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 200 |
| IRF510A | Fairchild Semi | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| IRF530NLPBF | IR | Power Field-Effect Transistor, 17A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 200 |
| IRF7307PBF | Infineon | Power Field-Effect Transistor, 5.2A I(D), 20V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 200 |
| IRF740AL | Siliconix | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 200 |
| IRF820ASPBF | Vishay | Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 200 |
| IRF840ALPBF | Vishay | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 200 |
| IRFD024 | Vishay | Power Field-Effect Transistor, 2.5A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 200 |
| IRFI4410ZGPBF | IR | Power Field-Effect Transistor, 43A I(D), 100V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| IRFI634G | Vishay | Power Field-Effect Transistor, 5.6A I(D), 250V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| IRFS38N20DTRLP | Infineon | Power Field-Effect Transistor, 43A I(D), 200V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 200 |
| IRFS41N15DPBF | Infineon | Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 200 |
| IRFS7730PBF | Infineon | Power Field-Effect Transistor | 200 |
| IRFS7762PBF | Infineon | Power Field-Effect Transistor | 200 |
| IRFS9N60APBF | Vishay | Power Field-Effect Transistor, 9.2A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 200 |
| IRFZ44NLPBF | Infineon | Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 200 |
| IRL530NSPBF | Infineon | Power Field-Effect Transistor, 17A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 200 |
| IRLBA3803PPBF | IR | Power Field-Effect Transistor, 179A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 200 |
| MDP1923TH | Magnachip | Power Field-Effect Transistor | 200 |
| NTP6411ANG | Onsemi | Power Field-Effect Transistor, 72A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| PSMN070-200P | Nexperia | Power Field-Effect Transistor, 35A I(D), 200V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 200 |
| RFP10P15 | Harris | Power Field-Effect Transistor, 10A I(D), 150V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| SIHB22N60S-E3 | Vishay | Power Field-Effect Transistor, 22A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 200 |
| SIHF9520S | Vishay | Power Field-Effect Transistor, 6.8A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 200 |
| SIR438DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 40A I(D), 25V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 200 |
| SPA12N50C3 | Infineon | Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| STB9NK50Z | ST Micro | Power Field-Effect Transistor, 7.2A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 200 |
| STP10N95K5 | ST Micro | Power Field-Effect Transistor, 8A I(D), 950V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| STP13NM60N | ST Micro | Power Field-Effect Transistor, 11A I(D), 600V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| STP15N80K5 | ST Micro | Power Field-Effect Transistor, 14A I(D), 800V, 0.375ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| STP160N75F3 | ST Micro | Power Field-Effect Transistor, 120A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| STP210N75F6 | ST Micro | Power Field-Effect Transistor, 120A I(D), 75V, 0.0037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| STP21N65M5 | ST Micro | Power Field-Effect Transistor, 17A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| STP5NK50Z | ST Micro | Power Field-Effect Transistor, 4.4A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| STP76NF75 | ST Micro | Power Field-Effect Transistor, 80A I(D), 75V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| STP7NK40Z | ST Micro | Power Field-Effect Transistor, 5.4A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| TK10A80E,S4X | Toshiba | Power Field-Effect Transistor | 200 |
| TK11A65W | Toshiba | Power Field-Effect Transistor, 11.1A I(D), 650V, 0.39ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| TK14E65W | Toshiba | Power Field-Effect Transistor, 13.7A I(D), 650V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| TK35E08N1 | Toshiba | Power Field-Effect Transistor, 35A I(D), 80V, 0.0122ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 200 |
| SIHU5N50D-E3 | Vishay | Power Field-Effect Transistor, 5.3A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 199 |
| IRFR3806TRPBF | Infineon | Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 198 |
| MTW26N15E | Motorola | Power Field-Effect Transistor, 26A I(D), 150V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AE | 197 |
| BUK455-400B | NXP | Power Field-Effect Transistor, 6.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 196 |
| BUK9608-55 | NXP | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 195 |
| FDMC86340 | Fairchild Semi | Power Field-Effect Transistor, 14A I(D), 80V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA | 195 |
| IRF1010S | IR | Power Field-Effect Transistor, 75A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 195 |
| IRF540STRR | Vishay | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 195 |
| IRFR48Z | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 195 |
| IRFR2407PBF | Infineon | Power Field-Effect Transistor, 30A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 192 |
| IRF7452QPBF | IR | Power Field-Effect Transistor, 4.5A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 190 |
| IRF7463 | Infineon | Power Field-Effect Transistor, 14A I(D), 30V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 190 |
| IRF7470 | Infineon | Power Field-Effect Transistor, 10A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 190 |
| IRF9952PBF | Infineon | Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 190 |
| IRFP4568PBF | Infineon | Power Field-Effect Transistor, 171A I(D), 150V, 0.0059ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 190 |
| IRFB7430PBF | Infineon | Power Field-Effect Transistor, 195A I(D), 40V, 0.0013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 188 |
| HUF76619D3S | Fairchild Semi | Power Field-Effect Transistor, 18A I(D), 100V, 0.089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 185 |
| BUZ21 | Infineon | Power Field-Effect Transistor, 21A I(D), 100V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 182 |
| TK72A12N1 | Toshiba | Power Field-Effect Transistor, 100A I(D), 120V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 182 |
| BUK456-200B | NXP | Power Field-Effect Transistor, 17A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 180 |
| IRFZ44NS | IR | Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 180 |
| MTD2955VT4 | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.23ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 180 |
| SSP5N90 | Samsung | Power Field-Effect Transistor, 5A I(D), 900V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 180 |
| STW13NK60Z | ST Micro | Power Field-Effect Transistor, 13A I(D), 600V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 180 |
| STW15NK90Z | ST Micro | Power Field-Effect Transistor, 15A I(D), 900V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 180 |
| STW35N60DM2 | ST Micro | Power Field-Effect Transistor | 180 |
| TK100A10N1 | Toshiba | Power Field-Effect Transistor, 100A I(D), 100V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 179 |
| 2SK1329 | Renesas | Power Field-Effect Transistor, 12A I(D), 500V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 178 |
| BSP295H6327 | Infineon | Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 175 |
| IRFP21N60LPBF | Vishay | Power Field-Effect Transistor, 21A I(D), 600V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 175 |
| IRFU7440PBF | Infineon | Power Field-Effect Transistor, 90A I(D), 40V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 175 |
| IRF9610PBF | Vishay | Power Field-Effect Transistor, 1.8A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 173 |
| STW3N150 | ST Micro | Power Field-Effect Transistor, 2.5A I(D), 1500V, 9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 172 |
| IRLU024NPBF | Infineon | Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 171 |
| 2SK856 | Toshiba | Power Field-Effect Transistor, 45A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 170 |
| AO3414 | Alpha Omega | Power Field-Effect Transistor, 4.2A I(D), 20V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 | 170 |
| STV300NH02L | ST Micro | Power Field-Effect Transistor, 280A I(D), 24V, 0.001ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 170 |
| IRF8010SPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 169 |
| VNB35N07-E | ST Micro | Power Field-Effect Transistor, 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 169 |
| IRF540 | Vishay | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 167 |
| IRFR120NPBF | Infineon | Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 167 |
| FDP3632 | Onsemi | Power Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 165 |
| IRF5305PBF | IR | Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 161 |
| SK115MAA10 | Semikron | Power Field-Effect Transistor, 95A I(D), 100V, 0.0045ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 161 |
| NP110N04PUG-AZ | Renesas | Power Field-Effect Transistor, 110A I(D), 20V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 160 |
| SI4967DY-T1-E3 | Vishay | Power Field-Effect Transistor, 7.5A I(D), 12V, 0.023ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 160 |
| IRFR3410PBF | IR | Power Field-Effect Transistor, 30A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 155 |
| NP110N04PUG | Renesas | Power Field-Effect Transistor, 110A I(D), 20V, 0.0018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 155 |
| RFP14N05L | Harris | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 155 |
| NVD5C464NT4G | Onsemi | Power Field-Effect Transistor | 154 |
| 2SK2661 | Toshiba | Power Field-Effect Transistor, 5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| AUIRF4905L | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 150 |
| AUIRFS3004 | Infineon | Power Field-Effect Transistor, 195A I(D), 40V, 0.00175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 150 |
| AUIRFS3107 | Infineon | Power Field-Effect Transistor, 195A I(D), 75V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 150 |
| AUIRFZ44V | Infineon | Power Field-Effect Transistor, 55A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 150 |
| AUIRLR014N | Infineon | Power Field-Effect Transistor, 10A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 150 |
| AUIRLS3036 | Infineon | Power Field-Effect Transistor, 195A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 150 |
| CSD18540Q5B | TI | Power Field-Effect Transistor, 28A I(D), 60V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 150 |
| FCA20N60 | Onsemi | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 150 |
| FDA38N30 | Onsemi | Power Field-Effect Transistor, 38A I(D), 300V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 150 |
| FDH3632 | Onsemi | Power Field-Effect Transistor, 12A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 150 |
| FDP050AN06A0 | Onsemi | Power Field-Effect Transistor, 18A I(D), 60V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| FQP2N60C | Onsemi | Power Field-Effect Transistor, 2A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| FQPF70N10 | Onsemi | Power Field-Effect Transistor, 35A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 150 |
| IPD144N06NG | Infineon | Power Field-Effect Transistor, 50A I(D), 60V, 0.0144ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 150 |
| IPP05CN10NG | Infineon | Power Field-Effect Transistor, 100A I(D), 100V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| IPW65R190C7 | Infineon | Power Field-Effect Transistor, 13A I(D), 650V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 150 |
| IRF1405LPBF | IR | Power Field-Effect Transistor, 131A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 150 |
| IRF520NLPBF | IR | Power Field-Effect Transistor, 9.7A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 150 |
| IRF640NPBF | Infineon | Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| IRF740APBF | Vishay | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| IRF9530PBF | Vishay | Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| IRF9Z24PBF | Vishay | Power Field-Effect Transistor, 11A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| IRFB23N20DPBF | Infineon | Power Field-Effect Transistor, 24A I(D), 200V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| IRFB3004PBF | Infineon | Power Field-Effect Transistor, 195A I(D), 40V, 0.00175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| IRFB7746PBF | Infineon | Power Field-Effect Transistor, 59A I(D), 75V, 0.0106ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| IRFIB7N50APBF | Vishay | Power Field-Effect Transistor, 6.6A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| IRFIBF30GPBF | Vishay | Power Field-Effect Transistor, 1.9A I(D), 900V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| IRFIZ48NPBF | Infineon | Power Field-Effect Transistor, 40A I(D), 55V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| IRFP260MPBF | Infineon | Power Field-Effect Transistor, 50A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 150 |
| IRFR020 | Vishay | Power Field-Effect Transistor, 14A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 150 |
| IRFS11N50APBF | Vishay | Power Field-Effect Transistor, 11A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 150 |
| IRFSL3107PBF | Infineon | Power Field-Effect Transistor, 195A I(D), 75V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 150 |
| IRFSL4227PBF | Infineon | Power Field-Effect Transistor, 62A I(D), 200V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 150 |
| IRL3803LPBF | IR | Power Field-Effect Transistor, 140A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 150 |
| IRLB3813PBF | Infineon | Power Field-Effect Transistor, 260A I(D), 30V, 0.00195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| IRLR8103VPBF | Infineon | Power Field-Effect Transistor, 91A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 150 |
| IRLZ24NS | Infineon | Power Field-Effect Transistor, 18A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 150 |
| SCT1000N170 | ST Micro | Power Field-Effect Transistor | 150 |
| STP12NM50 | ST Micro | Power Field-Effect Transistor, 12A I(D), 500V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| STP13N95K3 | ST Micro | Power Field-Effect Transistor, 10A I(D), 950V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| STP30NF10 | ST Micro | Power Field-Effect Transistor, 35A I(D), 100V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| STP4NK60Z | ST Micro | Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| STP4NK80ZFP | ST Micro | Power Field-Effect Transistor, 3A I(D), 800V, 3.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| STP60NF03L | ST Micro | Power Field-Effect Transistor, 60A I(D), 30V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| STP80NF55-08 | ST Micro | Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| STP80NS04Z | ST Micro | Power Field-Effect Transistor, 80A I(D), 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| STW20NB50 | ST Micro | Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 150 |
| STW30NM60N | ST Micro | Power Field-Effect Transistor, 25A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 150 |
| STY140NS10 | ST Micro | Power Field-Effect Transistor, 140A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 150 |
| SUP75N08-09L | Siliconix | Power Field-Effect Transistor, 75A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| TK17A65W,S5X | Toshiba | Power Field-Effect Transistor | 150 |
| TK17E65W | Toshiba | Power Field-Effect Transistor, 17.3A I(D), 650V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 150 |
| TK20D60U | Toshiba | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 150 |
| TK60D08J1 | Toshiba | Power Field-Effect Transistor, 60A I(D), 75V, 0.0093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 150 |
| 2SK2078 | Toshiba | Power Field-Effect Transistor, 9A I(D), 800V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 149 |
| IRFR220NPBF | Infineon | Power Field-Effect Transistor, 5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 149 |
| BUZ31H | Infineon | Power Field-Effect Transistor, 14.5A I(D), 200V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 146 |
| IRF7205 | Infineon | Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 146 |
| IRFSL3806PBF | Infineon | Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 146 |
| IRF7807ZPBF | Infineon | Power Field-Effect Transistor | 145 |
| SI4178DY-T1-GE3 | Siliconix | Power Field-Effect Transistor, 12A I(D), 30V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 145 |
| IRF7424TRPBF | Infineon | Power Field-Effect Transistor, 11A I(D), 30V, 0.0135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 142 |
| IRF7313TRPBF | IR | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 140 |
| IRFBC20SPBF | Vishay | Power Field-Effect Transistor, 2.2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 140 |
| 2SK2761-01MR | Fuji Elec | Power Field-Effect Transistor, 10A I(D), 600V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 139 |
| IRFP22N50A | Vishay | Power Field-Effect Transistor, 22A I(D), 500V, 0.23ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 138 |
| BUZ173 | Infineon | Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 134 |
| BUZ32 | Infineon | Power Field-Effect Transistor, 9.5A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 133 |
| AON6454 | Alpha Omega | Power Field-Effect Transistor, 30A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 132 |
| STD30PF03LT4 | ST Micro | Power Field-Effect Transistor, 24A I(D), 30V, 0.04ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 132 |
| IRF7416PBF | Infineon | Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 130 |
| IRFI9Z24GPBF | Vishay | Power Field-Effect Transistor, 8.5A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 130 |
| IRFS4310ZTRLPBF | IR | Power Field-Effect Transistor, 120A I(D), 100V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 130 |
| MDP1932TH | Magnachip | Power Field-Effect Transistor | 130 |
| PSMN040-100MSEX | Nexperia | Power Field-Effect Transistor, 30A I(D), 100V, 0.0366ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 130 |
| STP13NK60Z | ST Micro | Power Field-Effect Transistor, 13A I(D), 600V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 130 |
| BUZ71FI | ST Micro | Power Field-Effect Transistor, 12A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 129 |
| IRF3205S | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 129 |
| IRF7494PBF | IR | Power Field-Effect Transistor, 5.1A I(D), 150V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 129 |
| STP80NF12 | ST Micro | Power Field-Effect Transistor, 80A I(D), 120V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 129 |
| AUIRF3004WL | Infineon | Power Field-Effect Transistor, 240A I(D), 40V, 0.0014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 127 |
| AUIRFP2602 | Infineon | Power Field-Effect Transistor, 180A I(D), 24V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 125 |
| IRF3710Z | Infineon | Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 125 |
| IRFR320TRPBF | Vishay | Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 125 |
| IRFU4615PBF | Infineon | Power Field-Effect Transistor, 33A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 125 |
| AIMZH120R010M1T | Infineon | Power Field-Effect Transistor, 202A I(D), 1200V, 0.0113ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247 | 123 |
| IRFB7434PBF | Infineon | Power Field-Effect Transistor, 195A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 123 |
| 2SK2677 | Shindengen | Power Field-Effect Transistor, 10A I(D), 900V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 120 |
| FCH041N60E | Onsemi | Power Field-Effect Transistor, 77A I(D), 600V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB | 120 |
| HUF75852G3 | Onsemi | Power Field-Effect Transistor, 75A I(D), 150V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 120 |
| IRF7492PBF | IR | Power Field-Effect Transistor, 3.7A I(D), 200V, 0.079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 120 |
| IRFPC60LCPBF | Vishay | Power Field-Effect Transistor, 16A I(D), 600V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 120 |
| STW48N60M6-4 | ST Micro | Power Field-Effect Transistor, 39A I(D), 600V, 0.069ohm, 1-Element, N-Channel, Silicon, Superjunction Mosfet FET, TO-247 | 120 |
| STW52NK25Z | ST Micro | Power Field-Effect Transistor, 52A I(D), 250V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 120 |
| IPD65R600E6 | Infineon | Power Field-Effect Transistor, 7.3A I(D), 650V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 118 |
| SPD30N08S2L-21 | Infineon | Power Field-Effect Transistor, 30A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 117 |
| BSP149 | Infineon | Power Field-Effect Transistor, 0.66A I(D), 200V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 115 |
| IRF9640PBF | Vishay | Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 114 |
| IXFN36N60 | Littelfuse | Power Field-Effect Transistor, 36A I(D), 600V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 112 |
| MSCSM170AM029CT6LIAG | Microchip | Power Field-Effect Transistor, 676A I(D), 1700V, 0.00375ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET | 112 |
| BSC190N15NS3GATMA1 | Infineon | Power Field-Effect Transistor, 50A I(D), 150V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 111 |
| BSP92PH6327 | Infineon | Power Field-Effect Transistor, 0.26A I(D), 250V, 12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 110 |
| IRFR3707ZTRPBF | IR | Power Field-Effect Transistor, 56A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 110 |
| STE88N65M5 | ST Micro | Power Field-Effect Transistor | 110 |
| IRF7317PBF | Infineon | Power Field-Effect Transistor, 6.6A I(D), 20V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 109 |
| SPP80P06P | Infineon | Power Field-Effect Transistor, 91A I(D), 60V, 0.023ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 109 |
| IRFZ34NPBF | Infineon | Power Field-Effect Transistor, 29A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 106 |
| TK15A60U | Toshiba | Power Field-Effect Transistor, 15A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 106 |
| IPG20N04S409ATMA1 | Infineon | Power Field-Effect Transistor, 20A I(D), 40V, 0.0086ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 105 |
| IRF530NPBF | Infineon | Power Field-Effect Transistor, 17A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 104 |
| APT5024BVFRG | Microsemi | Power Field-Effect Transistor, 22A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | 103 |
| SI7852ADP-T1-E3 | Vishay | Power Field-Effect Transistor, 12A I(D), 80V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 103 |
| SCT055HU65G3AG | ST Micro | Power Field-Effect Transistor | 102 |
| 2SK2056 | Toshiba | Power Field-Effect Transistor, 4A I(D), 800V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 100 |
| 2SK2237 | Toshiba | Power Field-Effect Transistor, 7A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 100 |
| AUIRF2807 | Infineon | Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| AUIRFS3306 | Infineon | Power Field-Effect Transistor, 120A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 100 |
| BSC030P03NS3G | Infineon | Power Field-Effect Transistor, 25.4A I(D), 30V, 0.0046ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 100 |
| BSC035N04LSG | Infineon | Power Field-Effect Transistor, 21A I(D), 40V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 100 |
| BSC123N08NS3GATMA1 | Infineon | Power Field-Effect Transistor, 55A I(D), 80V, 0.0123ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 100 |
| BUZ78 | Infineon | Power Field-Effect Transistor, 1.5A I(D), 800V, 8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| FQP3N60C | Onsemi | Power Field-Effect Transistor, 3A I(D), 600V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| FQP85N06 | Onsemi | Power Field-Effect Transistor, 85A I(D), 60V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IAUT300N10S5N015ATMA1 | Infineon | Power Field-Effect Transistor, 300A I(D), 100V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 100 |
| IPA80R360P7 | Infineon | Power Field-Effect Transistor, 13A I(D), 800V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IPA80R450P7 | Infineon | Power Field-Effect Transistor, 11A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IPAN70R900P7S | Infineon | Power Field-Effect Transistor, 6A I(D), 700V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IPI80N04S3-H4 | Infineon | Power Field-Effect Transistor, 80A I(D), 40V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 100 |
| IPP60R099CP | Infineon | Power Field-Effect Transistor, 31A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IPP60R299CP | Infineon | Power Field-Effect Transistor, 11A I(D), 600V, 0.299ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IPP80N06S2-07 | Infineon | Power Field-Effect Transistor, 80A I(D), 55V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IRF3205LPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 100 |
| IRF3805LPBF | IR | Power Field-Effect Transistor, 75A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 100 |
| IRF3805SPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 100 |
| IRF530N | NXP | Power Field-Effect Transistor, 17A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IRF530NSPBF | Infineon | Power Field-Effect Transistor, 17A I(D), 100V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 100 |
| IRF530PBF | Vishay | Power Field-Effect Transistor, 14A I(D), 100V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IRF540NSHR | IR | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 100 |
| IRF740ASPBF | IR | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 100 |
| IRF820 | Thomson Elec | Power Field-Effect Transistor, 2.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 100 |
| IRF840B | Fairchild Semi | Power Field-Effect Transistor, 8A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IRF9510SPBF | Vishay | Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 100 |
| IRF9530 | IR | Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IRF9640 | IR | Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IRFB33N15DPBF | Infineon | Power Field-Effect Transistor, 33A I(D), 150V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IRFB4410PBF | Infineon | Power Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IRFBC20 | Vishay | Power Field-Effect Transistor, 2.2A I(D), 600V, 4.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IRFBF30PBF | Vishay | Power Field-Effect Transistor, 3.6A I(D), 900V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IRFI4019H-117P | Infineon | Power Field-Effect Transistor, 8.7A I(D), 150V, 0.095ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 100 |
| IRFI640G | Vishay | Power Field-Effect Transistor, 9.8A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IRFP140 | Vishay | Power Field-Effect Transistor, 31A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 100 |
| IRFP140NPBF | Infineon | Power Field-Effect Transistor, 33A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 100 |
| IRFR5305PBF | Infineon | Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 100 |
| IRFS11N50A | Siliconix | Power Field-Effect Transistor, 11A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 100 |
| IRFSL4620PBF | IR | Power Field-Effect Transistor, 24A I(D), 200V, 0.0775ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 100 |
| IRFZ34PBF | Vishay | Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| IRL3103SPBF | IR | Power Field-Effect Transistor, 64A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 100 |
| PSMN035-150P | Nexperia | Power Field-Effect Transistor, 50A I(D), 150V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 100 |
| SI4490DY | Vishay | Power Field-Effect Transistor, 2.85A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 100 |
| SI4807DY | Siliconix | Power Field-Effect Transistor, 6A I(D), 30V, 0.035ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 100 |
| SIHG33N60E-GE3 | Vishay | Power Field-Effect Transistor, 33A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 100 |
| SPP07N60S5 | Infineon | Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| STB45N60DM2AG | ST Micro | Power Field-Effect Transistor, 34A I(D), 600V, 0.093ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 100 |
| STP11NK50ZFP | ST Micro | Power Field-Effect Transistor, 10A I(D), 500V, 0.52ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| STP14NF12 | ST Micro | Power Field-Effect Transistor, 14A I(D), 120V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| STP3NK100Z | ST Micro | Power Field-Effect Transistor, 2.5A I(D), 1000V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| TK100E08N1 | Toshiba | Power Field-Effect Transistor, 100A I(D), 80V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| TK10A60W | Toshiba | Power Field-Effect Transistor, 9.7A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| TK12A60W | Toshiba | Power Field-Effect Transistor, 11.5A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| TK12J60U(F) | Toshiba | Power Field-Effect Transistor, 12A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 100 |
| TK8A60W | Toshiba | Power Field-Effect Transistor, 8A I(D), 600V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 100 |
| VNP14N04 | ST Micro | Power Field-Effect Transistor | 100 |
| IRF9620 | Fairchild Semi | Power Field-Effect Transistor, 3.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 99 |
| IRFP450PBF | Vishay | Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 99 |
| NP80N04CHE | Renesas | Power Field-Effect Transistor, 80A I(D), 40V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 99 |
| RS1E350GNTB | Rohm | Power Field-Effect Transistor, 35A I(D), 30V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 99 |
| SCH2080KEC | Rohm | Power Field-Effect Transistor, 40A I(D), 1200V, 0.117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 98 |
| STB170NF04 | ST Micro | Power Field-Effect Transistor, 80A I(D), 40V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 98 |
| SI4410DY | Vishay | Power Field-Effect Transistor, 10A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 97 |
| IRFP4368PBF | Infineon | Power Field-Effect Transistor, 195A I(D), 75V, 0.00185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 96 |
| SI4806DY | Siliconix | Power Field-Effect Transistor, 7.7A I(D), 30V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 96 |
| AUIRF7416Q | Infineon | Power Field-Effect Transistor, 10A I(D), 30V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 95 |
| CPH6354-TL-W | Onsemi | Power Field-Effect Transistor, 4A I(D), 60V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 95 |
| FQU9N25TU | Onsemi | Power Field-Effect Transistor, 7.4A I(D), 250V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | 95 |
| IRF7380QPBF | IR | Power Field-Effect Transistor, 3.6A I(D), 80V, 0.073ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 95 |
| IRF7805QPBF | IR | Power Field-Effect Transistor, 13A I(D), 30V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 95 |
| SMP3003-TL-1E | Onsemi | Power Field-Effect Transistor, 100A I(D), 75V, 0.011ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 95 |
| STW55NE10 | ST Micro | Power Field-Effect Transistor, 55A I(D), 100V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 95 |
| IRF3805S-7PPBF | Infineon | Power Field-Effect Transistor, 160A I(D), 55V, 0.0026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 94 |
| NTMD4N03R2G | Onsemi | Power Field-Effect Transistor, 4A I(D), 30V, 0.06ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 93 |
| IRF9956TRPBF | Infineon | Power Field-Effect Transistor, 3.5A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 92 |
| IRL640S | Siliconix | Power Field-Effect Transistor, 17A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 92 |
| IRF7807PBF | IR | Power Field-Effect Transistor, 8.3A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 91 |
| IRLB4030PBF | Infineon | Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 91 |
| 2SK2221-E | Renesas | Power Field-Effect Transistor, 8A I(D), 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 90 |
| 2SK3747-1E | Onsemi | Power Field-Effect Transistor, 2A I(D), 1500V, 13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 90 |
| FCH47N60_F133 | Onsemi | Power Field-Effect Transistor, 47A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB | 90 |
| FDD7N20TM | Onsemi | Power Field-Effect Transistor, 5A I(D), 200V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 90 |
| FDP020N06B_F102 | Onsemi | Power Field-Effect Transistor, 120A I(D), 60V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 90 |
| IRFR024N | IR | Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 90 |
| IRFS3306PBF | Infineon | Power Field-Effect Transistor, 120A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 90 |
| RJ1L12BGNTLL | Rohm | Power Field-Effect Transistor, 120A I(D), 60V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 90 |
| STP20NM50FP | ST Micro | Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 90 |
| STW42N65M5 | ST Micro | Power Field-Effect Transistor, 33A I(D), 650V, 0.079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 90 |
| STW58N60DM2AG | ST Micro | Power Field-Effect Transistor | 90 |
| STW70N60DM6-4 | ST Micro | Power Field-Effect Transistor | 90 |
| STW9NK90Z | ST Micro | Power Field-Effect Transistor, 8A I(D), 900V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 90 |
| TK14A65W5 | Toshiba | Power Field-Effect Transistor, 13.7A I(D), 650V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 90 |
| IPB072N15N3GATMA1 | Infineon | Power Field-Effect Transistor, 100A I(D), 150V, 0.0072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 89 |
| IRFR4620TRLPBF | Infineon | Power Field-Effect Transistor, 24A I(D), 200V, 0.078ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 89 |
| BSC018N04LSG | Infineon | Power Field-Effect Transistor, 30A I(D), 40V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 88 |
| IRFB3206PBF | Infineon | Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 88 |
| STP36NF06 | ST Micro | Power Field-Effect Transistor, 30A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 88 |
| SISS40DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 36.5A I(D), 100V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 87 |
| SPP12N50C3 | Infineon | Power Field-Effect Transistor, 11.6A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 87 |
| IPA65R400CEXKSA1 | Infineon | Power Field-Effect Transistor, 650V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 86 |
| IRF7313PBF | IR | Power Field-Effect Transistor, 6.5A I(D), 30V, 0.029ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 86 |
| SUM110P06-08L-E3 | Vishay | Power Field-Effect Transistor, 110A I(D), 60V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 85 |
| ZVN3220L | Zetex | Power Field-Effect Transistor, 8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 85 |
| SCT2750NYTB | Rohm | Power Field-Effect Transistor, 5.9A I(D), 1700V, 0.975ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-268AA | 83 |
| IRF7303 | Infineon | Power Field-Effect Transistor, 4A I(D), 30V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 82 |
| IRF7304PBF | Infineon | Power Field-Effect Transistor, 4.3A I(D), 20V, 0.09ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 82 |
| BUZ15 | Siemens | Power Field-Effect Transistor, 45A I(D), 50V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | 80 |
| BUZ271 | Siemens | Power Field-Effect Transistor, 22A I(D), 50V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 80 |
| HUF75639G3 | Onsemi | Power Field-Effect Transistor, 56A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 80 |
| IRF830 | Vishay | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 80 |
| IRFR9210 | Siliconix | Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 80 |
| IRFS4115PBF | Infineon | Power Field-Effect Transistor, 99A I(D), 150V, 0.0121ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 80 |
| IRFZ44VPBF | Infineon | Power Field-Effect Transistor, 55A I(D), 60V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 80 |
| R6030MNX | Rohm | Power Field-Effect Transistor, 30A I(D), 600V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 80 |
| STW20NM60FD | ST Micro | Power Field-Effect Transistor, 20A I(D), 600V, 0.29ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 80 |
| STW56N60DM2 | ST Micro | Power Field-Effect Transistor | 80 |
| IRF7433 | IR | Power Field-Effect Transistor, 8.9A I(D), 12V, 0.024ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 79 |
| IRF7220PBF | IR | Power Field-Effect Transistor, 11A I(D), 14V, 0.012ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 78 |
| AUIRFP4004 | Infineon | Power Field-Effect Transistor, 195A I(D), 40V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 75 |
| AUIRFR2407 | Infineon | Power Field-Effect Transistor, 42A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 75 |
| AUIRFR2607Z | Infineon | Power Field-Effect Transistor, 42A I(D), 75V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 75 |
| AUIRFR4104 | Infineon | Power Field-Effect Transistor, 42A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 75 |
| IRFP7530PBF | Infineon | Power Field-Effect Transistor, 281A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 75 |
| IRFR220N | Infineon | Power Field-Effect Transistor, 5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 75 |
| IRLU2703PBF | Infineon | Power Field-Effect Transistor, 23A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 75 |
| IRLU3105PBF | IR | Power Field-Effect Transistor, 25A I(D), 55V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 75 |
| TK16J60W | Toshiba | Power Field-Effect Transistor, 15.8A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 75 |
| BUK456-100A | NXP | Power Field-Effect Transistor, 34A I(D), 100V, 0.057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 74 |
| IRLZ44NSPBF | Infineon | Power Field-Effect Transistor, 47A I(D), 55V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 74 |
| IRFB4212PBF | Infineon | Power Field-Effect Transistor, 18A I(D), 100V, 0.0725ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 73 |
| BUZ103 | Infineon | Power Field-Effect Transistor, 40A I(D), 50V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 72 |
| IRFR5305 | Infineon | Power Field-Effect Transistor, 31A I(D), 55V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 72 |
| IRF7205PBF | Infineon | Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 71 |
| DMP10H400SE-13 | Diodes | Power Field-Effect Transistor, 2.3A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 70 |
| FDMS86300DC | Fairchild Semi | Power Field-Effect Transistor, 24A I(D), 80V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | 70 |
| IPP030N10N5AKSA1 | Infineon | Power Field-Effect Transistor, 120A I(D), 100V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 70 |
| IRF5210PBF | Infineon | Power Field-Effect Transistor, 40A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 70 |
| IRF8910 | Infineon | Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 70 |
| IRFU4105 | IR | Power Field-Effect Transistor, 20A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 70 |
| PSMN4R2-30MLDX | Nexperia | Power Field-Effect Transistor, 70A I(D), 30V, 0.0057ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 69 |
| IRFR6215PBF | Infineon | Power Field-Effect Transistor, 13A I(D), 150V, 0.295ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 68 |
| IRFR13N20D | Infineon | Power Field-Effect Transistor, 13A I(D), 200V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 66 |
| MTD15N06VT4 | Onsemi | Power Field-Effect Transistor, 15A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 66 |
| CSD25402Q3A | TI | Power Field-Effect Transistor, -72A I(D), 20V, 0.0159ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 65 |
| IRF7907PBF | Infineon | Power Field-Effect Transistor, 11A I(D), 30V, 0.0118ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 65 |
| IRFS3006PBF | Infineon | Power Field-Effect Transistor, 195A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 65 |
| STW4N150 | ST Micro | Power Field-Effect Transistor, 4A I(D), 1500V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 65 |
| 2SJ173 | Renesas | Power Field-Effect Transistor, 15A I(D), 60V, 0.17ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 64 |
| SUB65P04-15 | Siliconix | Power Field-Effect Transistor, 65A I(D), 40V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 63 |
| BSC080P03LSG | Infineon | Power Field-Effect Transistor, 16A I(D), 30V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 62 |
| NTMFS4927NT1G | Onsemi | Power Field-Effect Transistor | 62 |
| IRFU2905ZPBF | IR | Power Field-Effect Transistor, 42A I(D), 55V, 0.0145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 61 |
| STW25NM60N | ST Micro | Power Field-Effect Transistor, 21A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 61 |
| 2SK1317-E | Renesas | Power Field-Effect Transistor, 2.5A I(D), 1500V, 12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 60 |
| DMTH43M8LPSQ-13 | Diodes | Power Field-Effect Transistor | 60 |
| FDP025N06 | Onsemi | Power Field-Effect Transistor, 120A I(D), 60V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 60 |
| IPG20N04S4L-07 | Infineon | Power Field-Effect Transistor, 20A I(D), 40V, 0.0072ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 60 |
| IRF510 | Fairchild Semi | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 60 |
| IRF7457 | Infineon | Power Field-Effect Transistor, 15A I(D), 20V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 60 |
| IRLR8103V | Infineon | Power Field-Effect Transistor, 91A I(D), 30V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 60 |
| IXFH13N50 | IXYS | Power Field-Effect Transistor, 13A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 60 |
| STS7PF30L | ST Micro | Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 60 |
| IRF8736 | Infineon | Power Field-Effect Transistor | 58 |
| IRFF310 | Infineon | Power Field-Effect Transistor, 1.25A I(D), 400V, 4.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | 57 |
| IRFD9120PBF | Vishay | Power Field-Effect Transistor, 1A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 56 |
| AUIRFS4115 | IR | Power Field-Effect Transistor | 55 |
| IRF9Z34NSPBF | Infineon | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 55 |
| IRFR1205PBF | Infineon | Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 55 |
| BUZ63 | Infineon | Power Field-Effect Transistor, 5.9A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 54 |
| IRFPG50 | Vishay | Power Field-Effect Transistor, 6.1A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 54 |
| NDT456P | Onsemi | Power Field-Effect Transistor, 7.5A I(D), 30V, 0.03ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 54 |
| FDB2614 | Onsemi | Power Field-Effect Transistor, 62A I(D), 200V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 52 |
| IRLI530NPBF | Infineon | Power Field-Effect Transistor, 12A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 52 |
| SFH9240 | Fairchild Semi | Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 52 |
| VQ1001P | Vishay | Power Field-Effect Transistor, 0.85A I(D), N-Channel, Metal-oxide Semiconductor FET | 52 |
| 2SJ304 | Toshiba | Power Field-Effect Transistor, 14A I(D), 60V, 0.12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 50 |
| 2SK2382 | Toshiba | Power Field-Effect Transistor, 15A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| 2SK3564 | Toshiba | Power Field-Effect Transistor, 3A I(D), 900V, 4.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 50 |
| AUIRFB4410 | Infineon | Power Field-Effect Transistor, 75A I(D), 100V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| AUIRFS3806 | Infineon | Power Field-Effect Transistor, 43A I(D), 60V, 0.0158ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 50 |
| AUIRLS4030 | Infineon | Power Field-Effect Transistor, 180A I(D), 100V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 50 |
| BSC016N04LSG | Infineon | Power Field-Effect Transistor, 100A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 50 |
| BUZ20 | Infineon | Power Field-Effect Transistor, 13.5A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| FDP150N10 | Onsemi | Power Field-Effect Transistor, 57A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| FQP12P20 | Onsemi | Power Field-Effect Transistor, 11.5A I(D), 200V, 0.47ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| FQP44N10 | Onsemi | Power Field-Effect Transistor, 43.5A I(D), 100V, 0.039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| IRF3415SPBF | Infineon | Power Field-Effect Transistor, 43A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 50 |
| IRF4905SPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 50 |
| IRF540N | Infineon | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| IRF640S | Vishay | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 50 |
| IRF6668TR1PBF | IR | Power Field-Effect Transistor, 55A I(D), 80V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 50 |
| IRF840PBF | Vishay | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| IRF9540NLPBF | Infineon | Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 50 |
| IRFB3256PBF | Infineon | Power Field-Effect Transistor, 75A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 50 |
| IRFB4115PBF | Infineon | Power Field-Effect Transistor, 104A I(D), 150V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| IRFB4510PBF | Infineon | Power Field-Effect Transistor, 62A I(D), 100V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| IRFBA90N20DPBF | Infineon | Power Field-Effect Transistor, 95A I(D), 200V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-273AA | 50 |
| IRFBC30PBF | Vishay | Power Field-Effect Transistor, 3.6A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| IRFP150NPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 50 |
| IRFP4228PBF | IR | Power Field-Effect Transistor, 78A I(D), 150V, 0.0155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 50 |
| IRFP4332PBF | Infineon | Power Field-Effect Transistor, 57A I(D), 250V, 0.033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 50 |
| IRFPC40 | Vishay | Power Field-Effect Transistor, 6.8A I(D), 600V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 50 |
| IRFR13N20DPBF | Infineon | Power Field-Effect Transistor, 13A I(D), 200V, 0.235ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 50 |
| IRFR15N20DTRPBF | Infineon | Power Field-Effect Transistor, 17A I(D), 200V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 50 |
| IRFS4020PBF | Infineon | Power Field-Effect Transistor, 18A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 50 |
| IRL1104SPBF | IR | Power Field-Effect Transistor, 104A I(D), 40V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 50 |
| KF80N08P | Kec Corp | Power Field-Effect Transistor, 80A I(D), 75V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| KHB011N40F2 | Kec Corp | Power Field-Effect Transistor | 50 |
| KHB019N20P1 | Kec Corp | Power Field-Effect Transistor | 50 |
| KHB1D9N60I | Kec Corp | Power Field-Effect Transistor | 50 |
| KHB2D0N60F | Kec Corp | Power Field-Effect Transistor | 50 |
| KHB4D0N65F2 | Kec Corp | Power Field-Effect Transistor | 50 |
| KHB4D0N80P1 | Kec Corp | Power Field-Effect Transistor, 4A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| KHB4D5N60P | Kec Corp | Power Field-Effect Transistor | 50 |
| KHB5D0N50F2 | Kec Corp | Power Field-Effect Transistor | 50 |
| KHB6D0N40P | Kec Corp | Power Field-Effect Transistor | 50 |
| KHB7D0N65F2 | Kec Corp | Power Field-Effect Transistor | 50 |
| KHB7D0N65P1 | Kec Corp | Power Field-Effect Transistor | 50 |
| KHB7D0N80P1 | Kec Corp | Power Field-Effect Transistor | 50 |
| KHB9D0N50F1 | Kec Corp | Power Field-Effect Transistor | 50 |
| KHB9D0N50P1 | Kec Corp | Power Field-Effect Transistor | 50 |
| RSJ400N10TL | Rohm | Power Field-Effect Transistor, 40A I(D), 100V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 50 |
| STB10NK60Z-1 | ST Micro | Power Field-Effect Transistor, 10A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | 50 |
| STF26N60M2 | ST Micro | Power Field-Effect Transistor, 20A I(D), 600V, 0.165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| STF33N60M6 | ST Micro | Power Field-Effect Transistor | 50 |
| STP80PF55 | ST Micro | Power Field-Effect Transistor, 80A I(D), 55V, 0.018ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| STW5NK100Z | ST Micro | Power Field-Effect Transistor, 3.5A I(D), 1000V, 3.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 50 |
| TK10A50D | Toshiba | Power Field-Effect Transistor, 10A I(D), 500V, 0.72ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 50 |
| TK15E60U | Toshiba | Power Field-Effect Transistor, 15A I(D), 600V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| TK20A60U(Q) | Toshiba | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 50 |
| TK20E60U | Toshiba | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| TK34E10N1 | Toshiba | Power Field-Effect Transistor, 34A I(D), 100V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| TK72A08N1 | Toshiba | Power Field-Effect Transistor, 100A I(D), 80V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 50 |
| VNB35N07 | ST Micro | Power Field-Effect Transistor, 60V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 | 50 |
| 2SK2916 | Toshiba | Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 49 |
| IRF720 | Microsemi | Power Field-Effect Transistor, 3.3A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220 | 49 |
| IRFI9530GPBF | Vishay | Power Field-Effect Transistor, 7.7A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 49 |
| IRFU014 | IR | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 49 |
| IRF9540PBF | Vishay | Power Field-Effect Transistor, 19A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 48 |
| IRFP440 | Vishay | Power Field-Effect Transistor, 8.8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 48 |
| IRFZ44ZSPBF | Infineon | Power Field-Effect Transistor, 51A I(D), 55V, 0.0139ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 48 |
| HAT1055RJ | Renesas | Power Field-Effect Transistor, 5A I(D), 60V, 0.13ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 47 |
| IPB34CN10NG | Infineon | Power Field-Effect Transistor, 27A I(D), 100V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 47 |
| IRF630NSPBF | Infineon | Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 47 |
| UJN1205K | USCI | Power Field-Effect Transistor, 38A I(D), 1200V, 0.045ohm, 1-Element, N-Channel, Silicon Carbide, Junction FET, TO-247 | 46 |
| 2SK2267 | Toshiba | Power Field-Effect Transistor, 60A I(D), 60V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 45 |
| IRF3709ZPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 30V, 0.0063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 45 |
| IRF7468PBF | Infineon | Power Field-Effect Transistor, 9.4A I(D), 40V, 0.0155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 45 |
| IRL640A | Onsemi | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 45 |
| IRLR8743PBF | Infineon | Power Field-Effect Transistor, 160A I(D), 30V, 0.0031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 45 |
| SI7997DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 60A I(D), 30V, 0.0078ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 45 |
| FQD2N100TM | Onsemi | Power Field-Effect Transistor, 1.6A I(D), 1000V, 9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 44 |
| IRF9Z34NPBF | Infineon | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 43 |
| SI4562DY-T1-E3 | Vishay | Power Field-Effect Transistor, 7.1A I(D), 20V, 0.025ohm, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 43 |
| 2N6766 | Infineon | Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204 | 42 |
| BUZ350 | Infineon | Power Field-Effect Transistor, 22A I(D), 200V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA | 42 |
| FQD11P06TM | Onsemi | Power Field-Effect Transistor, 9.4A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 42 |
| IRF640 | Vishay | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 42 |
| IRF7842TRPBF | IR | Power Field-Effect Transistor, 18A I(D), 40V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 42 |
| IRFZ48NSPBF | IR | Power Field-Effect Transistor, 64A I(D), 55V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 42 |
| MTP23P06VG | Onsemi | Power Field-Effect Transistor, 23A I(D), 60V, 0.12ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 42 |
| FDS8949 | Onsemi | Power Field-Effect Transistor, 6A I(D), 40V, 0.043ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 41 |
| SI4542DY | Onsemi | Power Field-Effect Transistor, 6A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | 41 |
| 2SK2543 | Toshiba | Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 40 |
| 2SK3878 | Toshiba | Power Field-Effect Transistor, 9A I(D), 900V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 40 |
| FDS86140 | Onsemi | Power Field-Effect Transistor, 11.2A I(D), 100V, 0.0098ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 40 |
| IRF540ZPBF | Infineon | Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 40 |
| JANTX2N6845 | Infineon | Power Field-Effect Transistor, 4A I(D), 100V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | 40 |
| STE40NC60 | ST Micro | Power Field-Effect Transistor, 40A I(D), 600V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 40 |
| STW20NM50FD | ST Micro | Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 40 |
| IRF430 | Harris | Power Field-Effect Transistor, 4.5A I(D), 500V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | 39 |
| IRF9Z34NS | Infineon | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 39 |
| IRFR24N15D | Infineon | Power Field-Effect Transistor, 24A I(D), 150V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 38 |
| STW6NA80 | ST Micro | Power Field-Effect Transistor, 5.4A I(D), 800V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 38 |
| IRFZ34VSPBF | IR | Power Field-Effect Transistor, 30A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 37 |
| IXTH24P20 | IXYS | Power Field-Effect Transistor, 24A I(D), 200V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 37 |
| IRF1324S-7PPBF | Infineon | Power Field-Effect Transistor, 240A I(D), 24V, 0.001ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 36 |
| IRFR5505TRPBF | Infineon | Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 35 |
| BUK455-100A | NXP | Power Field-Effect Transistor, 26A I(D), 100V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 34 |
| IRFP450 | Vishay | Power Field-Effect Transistor, 14A I(D), 500V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 34 |
| STP20NM50FD | ST Micro | Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 34 |
| IRF640NSTRLPBF | Infineon | Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 32 |
| SPP18P06PH | Infineon | Power Field-Effect Transistor, 18.7A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 32 |
| UPA2794GR(0)-E1-AZ | Renesas | Power Field-Effect Transistor, 5.5A I(D), N-Channel and P-Channel, Metal-oxide Semiconductor FET | 32 |
| MG50H2YM1 | Toshiba | Power Field-Effect Transistor, 50A I(D), 500V, 0.13ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 31 |
| STH3N150-2 | ST Micro | Power Field-Effect Transistor, 2.5A I(D), 1500V, 9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 31 |
| STP40NF10 | ST Micro | Power Field-Effect Transistor, 50A I(D), 100V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 31 |
| SUB70N03-09BP | Vishay | Power Field-Effect Transistor, 70A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 31 |
| 2N7075 | Siliconix | Power Field-Effect Transistor, 30A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA | 30 |
| 2SK2750 | Toshiba | Power Field-Effect Transistor, 3.5A I(D), 600V, 2.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 30 |
| AP4953GM-HF | Advanced power | Power Field-Effect Transistor, 5A I(D), 30V, 0.053ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 30 |
| AUIRF9Z34N | Infineon | Power Field-Effect Transistor, 19A I(D), 55V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 30 |
| BTS3160D | Infineon | Power Field-Effect Transistor, 7.8A I(D), 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 30 |
| BUZ88A | Infineon | Power Field-Effect Transistor, 5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | 30 |
| G3R12MT12K | Navitas | Power Field-Effect Transistor, 155A I(D), 1200V, 0.0135ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247 | 30 |
| IPW60R045CPA | Infineon | Power Field-Effect Transistor, 60A I(D), 600V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 30 |
| IRFP4768PBF | Infineon | Power Field-Effect Transistor, 93A I(D), 250V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 30 |
| KHB9D0N90NA | Kec Corp | Power Field-Effect Transistor, 9A I(D), 900V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 30 |
| MTW8N60E | Onsemi | Power Field-Effect Transistor, 8A I(D), 600V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AE | 30 |
| SCT50N120 | ST Micro | Power Field-Effect Transistor, 65A I(D), 1200V, 0.69ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET | 30 |
| SCTW40N120G2VAG | ST Micro | Power Field-Effect Transistor, 33A I(D), 1200V, 0.105ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET | 30 |
| STV270N4F3 | ST Micro | Power Field-Effect Transistor, 270A I(D), 40V, 0.0015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 30 |
| STW60NE10 | ST Micro | Power Field-Effect Transistor, 60A I(D), 100V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 30 |
| IRFL4105PBF | Infineon | Power Field-Effect Transistor, 3.7A I(D), 55V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 29 |
| STW13NK100Z | ST Micro | Power Field-Effect Transistor, 13A I(D), 1000V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 29 |
| AO3418 | Alpha Omega | Power Field-Effect Transistor, 3.8A I(D), 30V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 28 |
| IPD70N03S4L-04 | Infineon | Power Field-Effect Transistor, 70A I(D), 30V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 28 |
| MTP2P50E | Onsemi | Power Field-Effect Transistor, 2A I(D), 500V, 6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 28 |
| STP80NF10 | ST Micro | Power Field-Effect Transistor, 80A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 28 |
| AON6242 | Alpha Omega | Power Field-Effect Transistor, 85A I(D), 60V, 0.0036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 26 |
| FDP032N08 | Onsemi | Power Field-Effect Transistor, 235A I(D), 75V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 26 |
| IRL3803PBF | Infineon | Power Field-Effect Transistor, 140A I(D), 30V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 26 |
| AUIRF4905STRL | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 25 |
| IPB60R099CPA | Infineon | Power Field-Effect Transistor, 31A I(D), 600V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 25 |
| IRF640NSPBF | IR | Power Field-Effect Transistor, 18A I(D), 200V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 25 |
| IRFP260 | Vishay | Power Field-Effect Transistor, 46A I(D), 200V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 25 |
| IRFP4710PBF | Infineon | Power Field-Effect Transistor, 72A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 25 |
| BUZ355 | Infineon | Power Field-Effect Transistor, 6A I(D), 800V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218 | 24 |
| IRFP3710PBF | Infineon | Power Field-Effect Transistor, 57A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 24 |
| IRFR9120N | Infineon | Power Field-Effect Transistor, 6.6A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 24 |
| IRFU3910 | IR | Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 24 |
| NTF2955T1G | Onsemi | Power Field-Effect Transistor, 1.7A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | 24 |
| SIR878BDP-T1-RE3 | Vishay | Power Field-Effect Transistor, 42.5A I(D), 100V, 0.0144ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 24 |
| STW50N65DM2AG | ST Micro | Power Field-Effect Transistor, 38A I(D), 650V, 0.087ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 24 |
| IRF640PBF | Vishay | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 23 |
| MTP2P50EG | Onsemi | Power Field-Effect Transistor, 2A I(D), 500V, 6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 23 |
| IPP80N04S3-04 | Infineon | Power Field-Effect Transistor, 80A I(D), 40V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB | 22 |
| IRF1405PBF | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.0053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 22 |
| FQPF4P40 | Fairchild Semi | Power Field-Effect Transistor, 2.4A I(D), 400V, 3.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 21 |
| IXFK24N100 | IXYS | Power Field-Effect Transistor, 24A I(D), 1000V, 0.39ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA | 21 |
| JANTX2N6798 | Infineon | Power Field-Effect Transistor, 5.5A I(D), 200V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | 21 |
| BUZ36 | Siemens | Power Field-Effect Transistor, 22A I(D), 200V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | 20 |
| BUZ905DP | TT Electronics | Power Field-Effect Transistor, 16A I(D), 160V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-264AA | 20 |
| C2M1000170J | Wolfspeed | Power Field-Effect Transistor, 5.3A I(D), 1700V, 1.4ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET | 20 |
| FQPF5N60C | Onsemi | Power Field-Effect Transistor, 4.5A I(D), 600V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 20 |
| IPP030N10N5 | Infineon | Power Field-Effect Transistor, 120A I(D), 100V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 20 |
| SQJ431EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 12A I(D), 200V, 0.221ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | 20 |
| STE30NK90Z | ST Micro | Power Field-Effect Transistor, 28A I(D), 900V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 20 |
| STE70NM50 | ST Micro | Power Field-Effect Transistor, 70A I(D), 500V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 20 |
| BUZ90A | Infineon | Power Field-Effect Transistor, 4A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 19 |
| IMZ120R030M1HXKSA1 | Infineon | Power Field-Effect Transistor, 56A I(D), 1200V, 0.056ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET, TO-247 | 19 |
| IPP110N20N3G | Infineon | Power Field-Effect Transistor, 88A I(D), 200V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 19 |
| IRFR9220PBF | Vishay | Power Field-Effect Transistor, 3.6A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 19 |
| IRF1010ESPBF | IR | Power Field-Effect Transistor, 75A I(D), 60V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 18 |
| IRF3515SPBF | IR | Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 18 |
| IRFP9240 | Vishay | Power Field-Effect Transistor, 12A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 18 |
| BSZ042N06NS | Infineon | Power Field-Effect Transistor, 98A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 17 |
| BUZ30AH | Infineon | Power Field-Effect Transistor, 21A I(D), 200V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 17 |
| FQA90N15 | Onsemi | Power Field-Effect Transistor, 90A I(D), 150V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 17 |
| 2N6784 | Infineon | Power Field-Effect Transistor, 2.25A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | 16 |
| BSG0812ND | Infineon | Power Field-Effect Transistor, 49A I(D), 25V, 0.0046ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 16 |
| IRF740 | Fairchild Semi | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 16 |
| FQP19N10 | Fairchild Semi | Power Field-Effect Transistor, 19A I(D), 100V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 15 |
| STB34NM60ND | ST Micro | Power Field-Effect Transistor, 29A I(D), 600V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 15 |
| STD65N55F3 | ST Micro | Power Field-Effect Transistor, 80A I(D), 55V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 14 |
| IRF9530NPBF | Infineon | Power Field-Effect Transistor, 14A I(D), 100V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 13 |
| IRFS4010PBF | IR | Power Field-Effect Transistor, 180A I(D), 100V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 13 |
| IRFU120NPBF | Infineon | Power Field-Effect Transistor, 9.4A I(D), 100V, 0.21ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | 13 |
| SF200AA20 | Sansha Electric | Power Field-Effect Transistor, 200A I(D), 1-Element, Metal-oxide Semiconductor FET | 13 |
| SIR876DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 40A I(D), 100V, 0.0108ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 13 |
| SPD50P03LG | Infineon | Power Field-Effect Transistor, 50A I(D), 30V, 0.007ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 13 |
| MRF21085 | Freescale | Power Field-Effect Transistor, 1-Element, N-Channel, Metal-oxide Semiconductor FET | 12 |
| BUZ11A | Siemens | Power Field-Effect Transistor, 26A I(D), 50V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 10 |
| FQP6N60C | Fairchild Semi | Power Field-Effect Transistor, 5.5A I(D), 600V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 10 |
| FQPF55N10 | Fairchild Semi | Power Field-Effect Transistor, 34.2A I(D), 100V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 10 |
| IRF7424 | IR | Power Field-Effect Transistor, 11A I(D), 30V, 0.0135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | 10 |
| IRFR5410PBF | Infineon | Power Field-Effect Transistor, 13A I(D), 100V, 0.205ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 10 |
| IXFH28N60P3 | Littelfuse | Power Field-Effect Transistor, 28A I(D), 600V, 0.26ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | 10 |
| IXTM67N10 | IXYS | Power Field-Effect Transistor, 67A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | 10 |
| SK260MB10 | Semikron | Power Field-Effect Transistor, 230A I(D), 100V, 0.0025ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 10 |
| STE45NK80ZD | ST Micro | Power Field-Effect Transistor, 45A I(D), 800V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 10 |
| IRF9130 | Infineon | Power Field-Effect Transistor, 11A I(D), 100V, 0.35ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | 9 |
| IRFP260N | Infineon | Power Field-Effect Transistor, 50A I(D), 200V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | 9 |
| BSZ042N06NSATMA1 | Infineon | Power Field-Effect Transistor, 40A I(D), 60V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 8 |
| IXTP01N100D | IXYS | Power Field-Effect Transistor, 0.1A I(D), 1000V, 110ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AD | 8 |
| 2SK3566 | Toshiba | Power Field-Effect Transistor, 2.5A I(D), 900V, 6.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 7 |
| AUIRF4905S | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.02ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 7 |
| IXTH1N200P3 | Littelfuse | Power Field-Effect Transistor, 1A I(D), 2000V, 40ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | 7 |
| IXTH64N10L2 | IXYS | Power Field-Effect Transistor | 7 |
| STP9N60M2 | ST Micro | Power Field-Effect Transistor | 7 |
| BSC340N08NS3G | Infineon | Power Field-Effect Transistor, 23A I(D), 80V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5 |
| BSM244F | Siemens | Power Field-Effect Transistor, 45A I(D), 400V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5 |
| CHT-PLA2016A-CSOIC16-T | Cissoid | Power Field-Effect Transistor | 5 |
| CHT-PLA4091A-TDFP16-T | Cissoid | Power Field-Effect Transistor, 1A I(D), 80V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5 |
| IRFR5505PBF | Infineon | Power Field-Effect Transistor, 18A I(D), 55V, 0.11ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | 5 |
| IRLI2203NPBF | IR | Power Field-Effect Transistor, 61A I(D), 30V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 5 |
| IXFH40N30Q | Littelfuse | Power Field-Effect Transistor, 40A I(D), 300V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | 5 |
| STE70NM60 | ST Micro | Power Field-Effect Transistor, 70A I(D), 600V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 5 |
| STP6NK50Z | ST Micro | Power Field-Effect Transistor, 5.6A I(D), 500V, 1.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 4 |
| SUM55P06-19L | Siliconix | Power Field-Effect Transistor, 55A I(D), 60V, 0.019ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | 4 |
| 2SK2393-E | Renesas | Power Field-Effect Transistor, 8A I(D), 1500V, 2.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1 |
| CSD17313Q2T | TI | Power Field-Effect Transistor, 5A I(D), 30V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1 |
| FCA75BC50 | Sansha Electric | Power Field-Effect Transistor, 75A I(D), 1-Element, Metal-oxide Semiconductor FET | 1 |
| NTD14N03RT4G | Onsemi | Power Field-Effect Transistor, 11.4A I(D), 25V, 0.13ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1 |
| SKM111AR | Semikron | Power Field-Effect Transistor, 200A I(D), 100V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | 1 |
| SPA04N60C3 | Infineon | Power Field-Effect Transistor, 4.5A I(D), 600V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | 1 |
| SUD50P06-15-GE3 | Vishay | Power Field-Effect Transistor, 50A I(D), 60V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | 1 |
| 2N6782 | Infineon | Power Field-Effect Transistor, 3.5A I(D), 100V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | on request |
| 2SJ352-E | Renesas | Power Field-Effect Transistor, 8A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| 2SK1579DYTR | Renesas Tech | Power Field-Effect Transistor, 2A I(D), 12V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| 2SK1620(S) | Hitachi | Power Field-Effect Transistor, 10A I(D), 0.15ohm, 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| 2SK1623S | Renesas | Power Field-Effect Transistor, 20A I(D), 100V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| 2SK2225-E | Renesas | Power Field-Effect Transistor, 2A I(D), 1500V, 12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| 2SK2231 | Toshiba | Power Field-Effect Transistor, 5A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| 2SK2917(F) | Toshiba | Power Field-Effect Transistor, 18A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| 2SK3919-ZK-E1 | Renesas | Power Field-Effect Transistor, 64A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| AO4612 | Alpha Omega | Power Field-Effect Transistor, 4.5A I(D), 60V, 0.056ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| AOB20S60L | Alpha Omega | Power Field-Effect Transistor, 20A I(D), 600V, 0.199ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| AOD5N50 | Alpha Omega | Power Field-Effect Transistor, 5A I(D), 500V, 1.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| AON6280 | Alpha Omega | Power Field-Effect Transistor, 85A I(D), 80V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| AON7406 | Alpha Omega | Power Field-Effect Transistor, 25A I(D), 30V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| AON7410 | Alpha Omega | Power Field-Effect Transistor, 24A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| AOT27S60L | Alpha Omega | Power Field-Effect Transistor, 27A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| AUIRF540ZS | Infineon | Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| AUIRF6215 | Infineon | Power Field-Effect Transistor, 13A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| AUIRF6215STRL | Infineon | Power Field-Effect Transistor, 13A I(D), 150V, 0.29ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| AUIRF7304Q | Infineon | Power Field-Effect Transistor, 4.3A I(D), 20V, 0.09ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| AUIRF7309QTR | Infineon | Power Field-Effect Transistor, 4A I(D), 30V, 0.05ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| AUIRF7341QTR | Infineon | Power Field-Effect Transistor, 5.1A I(D), 55V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| AUIRFN8403TR | Infineon | Power Field-Effect Transistor, 95A I(D), 40V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| AUIRFN8459TR | IR | Power Field-Effect Transistor, 50A I(D), 40V, 0.0059ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| AUIRFR9024N | Infineon | Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| AUIRFR9024NTR | IR | Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| AUIRFS3307Z | Infineon | Power Field-Effect Transistor, 120A I(D), 75V, 0.0058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| AUIRFS3607 | Infineon | Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| AUIRFS4410Z | Infineon | Power Field-Effect Transistor, 97A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| AUIRLR024N | Infineon | Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| AUIRLR2905 | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| AUIRLR3110Z | Infineon | Power Field-Effect Transistor, 42A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| AUIRLS3036TRR | IR | Power Field-Effect Transistor, 195A I(D), 60V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| AUIRLS4030-7P | Infineon | Power Field-Effect Transistor, 190A I(D), 100V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BF1009S-E6327 | Infineon | Power Field-Effect Transistor, 0.025A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| BF1009SR-E6327 | Infineon | Power Field-Effect Transistor, 0.025A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| BF992 | NA Philips | Power Field-Effect Transistor, 0.04A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| BSC014N06NST | Infineon | Power Field-Effect Transistor, 257A I(D), 60V, 0.00145ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BSC022N03S | Infineon | Power Field-Effect Transistor, 28A I(D), 30V, 0.0033ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BSC028N06LS3G | Infineon | Power Field-Effect Transistor, 100A I(D), 60V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BSC076N06NS3G | Infineon | Power Field-Effect Transistor, 14A I(D), 60V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BSC252N10NSFG | Infineon | Power Field-Effect Transistor, 7.2A I(D), 100V, 0.0252ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BSC350N20NSFD | Infineon | Power Field-Effect Transistor, 35A I(D), 200V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BSM252F | Infineon | Power Field-Effect Transistor, 18A I(D), 1-Element, Metal-oxide Semiconductor FET | on request |
| BSP315P | Infineon | Power Field-Effect Transistor, 1.17A I(D), 60V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BSP317PL6327 | Infineon | Power Field-Effect Transistor, 0.43A I(D), 250V, 4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BSP613PH6327 | Infineon | Power Field-Effect Transistor, 2.9A I(D), 60V, 0.13ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BSS83 | Philips Semi | Power Field-Effect Transistor, 0.05A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| BSZ076N06NS3G | Infineon | Power Field-Effect Transistor, 14A I(D), 60V, 0.0076ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BSZ097N04LSG | Infineon | Power Field-Effect Transistor, 12A I(D), 40V, 0.0142ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BSZ110N08NS5ATMA1 | Infineon | Power Field-Effect Transistor, 40A I(D), 80V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BTS112AE3045A | Infineon | Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BUK563-60A | NXP | Power Field-Effect Transistor, 21A I(D), 60V, 0.085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BUK7611-55A | Nexperia | Power Field-Effect Transistor, 75A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BUK7Y12-55B | Nexperia | Power Field-Effect Transistor, 61.8A I(D), 55V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 | on request |
| BUK9575-55A | Nexperia | Power Field-Effect Transistor, 20A I(D), 55V, 0.081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| BUK9624-55A | Nexperia | Power Field-Effect Transistor, 46A I(D), 55V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BUK98180-100A | NXP | Power Field-Effect Transistor, 4.6A I(D), 100V, 0.201ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BUK9880-55 | Nexperia | Power Field-Effect Transistor, 3.5A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| BUK9Y15-60E | Nexperia | Power Field-Effect Transistor, 53A I(D), 60V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 | on request |
| BUK9Y4R4-40E | Nexperia | Power Field-Effect Transistor, 100A I(D), 40V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 | on request |
| BUK9Y4R4-40E,115 | Nexperia | Power Field-Effect Transistor, 100A I(D), 40V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 | on request |
| BUK9Y65-100E | Nexperia | Power Field-Effect Transistor, 19A I(D), 100V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 | on request |
| BUZ10 | ST Micro | Power Field-Effect Transistor, 23A I(D), 50V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| BUZ104L | Infineon | Power Field-Effect Transistor, 17.5A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| BUZ11 | Siemens | Power Field-Effect Transistor, 30A I(D), 50V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| BUZ11 | Fairchild Semi | Power Field-Effect Transistor, 30A I(D), 50V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| BUZ111S | Infineon | Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| BUZ11A | ST Micro | Power Field-Effect Transistor, 26A I(D), 50V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| BUZ12A | Infineon | Power Field-Effect Transistor, 33A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| BUZ357 | Infineon | Power Field-Effect Transistor, 5.1A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218AA | on request |
| BUZ76A | Infineon | Power Field-Effect Transistor, 2.6A I(D), 400V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| CSD19502Q5B | TI | Power Field-Effect Transistor, 157A I(D), 80V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| DMG2305UX-7 | Diodes | Power Field-Effect Transistor, 4.2A I(D), 20V, 0.052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| DMG6968U-7 | Diodes | Power Field-Effect Transistor, 6.5A I(D), 20V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| DMN6070SSD-13 | Diodes | Power Field-Effect Transistor, 3.3A I(D), 60V, 0.08ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| DMTH4004SPSQ-13 | Diodes | Power Field-Effect Transistor, 31A I(D), 40V, 0.0027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FCA20N60F | Onsemi | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FCA47N60F | Onsemi | Power Field-Effect Transistor, 47A I(D), 600V, 0.073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FCB11N60TM | Onsemi | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 | on request |
| FCD600N60Z | Onsemi | Power Field-Effect Transistor, 7.4A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| FCP11N60F | Onsemi | Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| FCP190N60E | Onsemi | Power Field-Effect Transistor, 20.6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| FDA59N30 | Onsemi | Power Field-Effect Transistor, 59A I(D), 300V, 0.056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDB15N50 | Onsemi | Power Field-Effect Transistor, 15A I(D), 500V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| FDB2532 | Onsemi | Power Field-Effect Transistor, 8A I(D), 150V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| FDB2572 | Onsemi | Power Field-Effect Transistor, 4A I(D), 150V, 0.054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| FDB52N20TM | Onsemi | Power Field-Effect Transistor, 52A I(D), 200V, 0.049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 | on request |
| FDB6670AL | Fairchild Semi | Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| FDD4685 | Onsemi | Power Field-Effect Transistor, 8.4A I(D), 40V, 0.042ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| FDD5614P | Onsemi | Power Field-Effect Transistor, 15A I(D), 60V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| FDD5670 | Onsemi | Power Field-Effect Transistor, 21A I(D), 60V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| FDD6637 | Onsemi | Power Field-Effect Transistor, 13A I(D), 35V, 0.0116ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| FDD6690A | Onsemi | Power Field-Effect Transistor, 12A I(D), 30V, 0.0125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| FDD6N50FTM | Onsemi | Power Field-Effect Transistor, 5.5A I(D), 500V, 1.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| FDD8444_F085 | Fairchild Semi | Power Field-Effect Transistor, 40V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| FDD8586 | Fairchild Semi | Power Field-Effect Transistor, 35A I(D), 20V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| FDD8647L | Onsemi | Power Field-Effect Transistor, 14A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| FDD8870-F085 | Onsemi | Power Field-Effect Transistor, 30V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| FDFS6N548 | Onsemi | Power Field-Effect Transistor, 7A I(D), 30V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDMC2523P | Onsemi | Power Field-Effect Transistor, 3A I(D), 150V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDMC6675BZ | Onsemi | Power Field-Effect Transistor, 9.5A I(D), 30V, 0.0144ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDMC86520L | Onsemi | Power Field-Effect Transistor, 13.5A I(D), 60V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-229 | on request |
| FDMC8884 | Onsemi | Power Field-Effect Transistor, 9A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDMQ8203 | Onsemi | Power Field-Effect Transistor, 3.4A I(D), 100V, 0.11ohm, 4-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDMS86310 | Fairchild Semi | Power Field-Effect Transistor, 17A I(D), 80V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | on request |
| FDP26N40 | Fairchild Semi | Power Field-Effect Transistor, 26A I(D), 400V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| FDP2710_F085 | Fairchild Semi | Power Field-Effect Transistor, 4A I(D), 250V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| FDP3652 | Onsemi | Power Field-Effect Transistor, 9A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| FDPF3860T | Onsemi | Power Field-Effect Transistor, 20A I(D), 100V, 0.0382ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| FDS2572 | Onsemi | Power Field-Effect Transistor, 4.9A I(D), 150V, 0.053ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| FDS2734 | Onsemi | Power Field-Effect Transistor, 3A I(D), 250V, 0.225ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDS3992_NL | Fairchild Semi | Power Field-Effect Transistor, 4.5A I(D), 100V, 0.062ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDS4480 | Onsemi | Power Field-Effect Transistor, 10.8A I(D), 40V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDS4559 | Onsemi | Power Field-Effect Transistor, 4.5A I(D), 60V, 0.055ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDS6982AS | Fairchild Semi | Power Field-Effect Transistor, 8.6A I(D), 30V, 0.0135ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDS8958A | Onsemi | Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDS8958A_NL | Fairchild Semi | Power Field-Effect Transistor, 7A I(D), 30V, 0.028ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDT3N40TF | Fairchild Semi | Power Field-Effect Transistor, 2A I(D), 400V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDT434P | Fairchild Semi | Power Field-Effect Transistor, 6A I(D), 20V, 0.05ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDT439N | Onsemi | Power Field-Effect Transistor, 6.3A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDW254P | Fairchild Semi | Power Field-Effect Transistor, 9.2A I(D), 20V, 0.012ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FDWS9510L-F085 | Onsemi | Power Field-Effect Transistor, 50A I(D), 40V, 0.0135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA | on request |
| FQAF13N80 | Onsemi | Power Field-Effect Transistor, 8A I(D), 800V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| FQB11P06TM | Onsemi | Power Field-Effect Transistor, 11.4A I(D), 60V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| FQB22P10TM | Onsemi | Power Field-Effect Transistor, 22A I(D), 100V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| FQB33N10LTM | Onsemi | Power Field-Effect Transistor, 33A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| FQB5N90TM | Onsemi | Power Field-Effect Transistor, 5.4A I(D), 900V, 2.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| FQD12N20TM | Onsemi | Power Field-Effect Transistor, 9A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| FQD13N10TF | Fairchild Semi | Power Field-Effect Transistor, 10A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| FQD17P06TF | Fairchild Semi | Power Field-Effect Transistor, 12A I(D), 60V, 0.135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| FQD17P06TM | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| FQD2N80 | Fairchild Semi | Power Field-Effect Transistor, 1.8A I(D), 800V, 6.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| FQD5P20TM | Onsemi | Power Field-Effect Transistor, 3.7A I(D), 200V, 1.4ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| FQD7N30 | Fairchild Semi | Power Field-Effect Transistor, 5.5A I(D), 300V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| FQD7N30TM | Onsemi | Power Field-Effect Transistor, 5.5A I(D), 300V, 0.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| FQD7P20TM | Onsemi | Power Field-Effect Transistor, 5.7A I(D), 200V, 0.69ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| FQP27N25 | Onsemi | Power Field-Effect Transistor, 25.5A I(D), 250V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| FQP47P06 | Onsemi | Power Field-Effect Transistor, 47A I(D), 60V, 0.026ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| FQP50N06 | Onsemi | Power Field-Effect Transistor, 50A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| FQP50N06L | Onsemi | Power Field-Effect Transistor, 52.4A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| FQPF13N50CF | Onsemi | Power Field-Effect Transistor, 13A I(D), 500V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| FQU17P06TU | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.135ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | on request |
| FS8820 | Fortune | Power Field-Effect Transistor, 6.5A I(D), N-Channel, Metal-oxide Semiconductor FET | on request |
| HP4410DY | Fairchild Semi | Power Field-Effect Transistor, 10A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IPB081N06L3G | Infineon | Power Field-Effect Transistor, 50A I(D), 60V, 0.0081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IPB17N25S3-100 | Infineon | Power Field-Effect Transistor, 17A I(D), 250V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IPB200N25N3G | Infineon | Power Field-Effect Transistor, 64A I(D), 250V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IPB80N04S403ATMA1 | Infineon | Power Field-Effect Transistor, 80A I(D), 40V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IPB80N06S2L-06 | Infineon | Power Field-Effect Transistor, 80A I(D), 55V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IPD30N06S2L-13 | Infineon | Power Field-Effect Transistor, 30A I(D), 55V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| IPD30N08S2L-21 | Infineon | Power Field-Effect Transistor, 30A I(D), 75V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IPG20N04S4-08 | Infineon | Power Field-Effect Transistor, 20A I(D), 40V, 0.0076ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IPP120N04S3-02 | Infineon | Power Field-Effect Transistor, 120A I(D), 40V, 0.0023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IPP65R380C6 | Infineon | Power Field-Effect Transistor, 10.6A I(D), 650V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IPW60R099C6 | Infineon | Power Field-Effect Transistor, 37.9A I(D), 600V, 0.099ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | on request |
| IRF1018EPBF | Infineon | Power Field-Effect Transistor, 79A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRF1018ESLPBF | Infineon | Power Field-Effect Transistor, 79A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | on request |
| IRF1310NSPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 100V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF1404SPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 40V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRF150 | Harris | Power Field-Effect Transistor, 40A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | on request |
| IRF220 | Infineon | Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | on request |
| IRF250 | Infineon | Power Field-Effect Transistor, 30A I(D), 200V, 0.09ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AE | on request |
| IRF2804S-7PPBF | Infineon | Power Field-Effect Transistor, 160A I(D), 40V, 0.0016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRF2805STRLPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF3205STRRPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF3205ZLPBF | Infineon | Power Field-Effect Transistor, 75A I(D), 55V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | on request |
| IRF3710LPBF | Infineon | Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | on request |
| IRF3710STRLPBF | Infineon | Power Field-Effect Transistor, 57A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF3710ZSPBF | Infineon | Power Field-Effect Transistor, 59A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF40H233 | Infineon | Power Field-Effect Transistor | on request |
| IRF520FI | ST Micro | Power Field-Effect Transistor, 7A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRF520NSPBF | Infineon | Power Field-Effect Transistor, 9.7A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRF5210SPBF | Infineon | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF5210STRL | IR | Power Field-Effect Transistor, 38A I(D), 100V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF5305 | Infineon | Power Field-Effect Transistor, 31A I(D), 55V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRF530A | Onsemi | Power Field-Effect Transistor, 14A I(D), 100V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRF540NS | Infineon | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRF540NSTRLPBF | Infineon | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 | on request |
| IRF540NSTRRPBF | Infineon | Power Field-Effect Transistor, 33A I(D), 100V, 0.044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRF540STRLPBF | Vishay | Power Field-Effect Transistor, 28A I(D), 100V, 0.077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF540ZS | Infineon | Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF540ZSPBF | Infineon | Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF540ZSTRLPBF | Infineon | Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF540ZSTRRPBF | Infineon | Power Field-Effect Transistor, 36A I(D), 100V, 0.0265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF620 | Vishay | Power Field-Effect Transistor, 5.2A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRF630 | ST Micro | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRF630 | Harris | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRF630NSTRL | IR | Power Field-Effect Transistor, 9.3A I(D), 200V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF640S | ST Micro | Power Field-Effect Transistor, 18A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF6641TR1PBF | IR | Power Field-Effect Transistor, 4.6A I(D), 200V, 0.0599ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRF6648TR1PBF | IR | Power Field-Effect Transistor, 86A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRF6648TRPBF | Infineon | Power Field-Effect Transistor, 86A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRF6892STR1PBF | IR | Power Field-Effect Transistor, 125A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| IRF7101PBF | Infineon | Power Field-Effect Transistor, 3.5A I(D), 20V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRF7301TRPBF | Infineon | Power Field-Effect Transistor, 5.2A I(D), 20V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| IRF7306 | Infineon | Power Field-Effect Transistor, 3A I(D), 30V, 0.1ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRF730S | Vishay | Power Field-Effect Transistor, 5.5A I(D), 400V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF7342D2PBF | IR | Power Field-Effect Transistor, 3.4A I(D), 55V, 0.105ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| IRF7389TRPBF | Infineon | Power Field-Effect Transistor, 7.3A I(D), 30V, 0.029ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| IRF740A | Vishay | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRF740SPBF | Vishay | Power Field-Effect Transistor, 10A I(D), 400V, 0.55ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF7425PBF | IR | Power Field-Effect Transistor, 15A I(D), 20V, 0.0082ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| IRF7425TRPBF | Infineon | Power Field-Effect Transistor, 15A I(D), 20V, 0.0082ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| IRF7452TRPBF | Infineon | Power Field-Effect Transistor, 4.5A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| IRF7455TR | IR | Power Field-Effect Transistor, 15A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| IRF7467PBF | IR | Power Field-Effect Transistor, 11A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| IRF7506TR | IR | Power Field-Effect Transistor, 1.7A I(D), 30V, 0.27ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRF7601TRPBF | Infineon | Power Field-Effect Transistor, 5.7A I(D), 20V, 0.035ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRF7811APBF | IR | Power Field-Effect Transistor, 11A I(D), 28V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| IRF7853PBF | Infineon | Power Field-Effect Transistor, 8.3A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| IRF7853TRPBF | Infineon | Power Field-Effect Transistor, 8.3A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| IRF8736TRPBF | Infineon | Power Field-Effect Transistor, 18A I(D), 30V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| IRF8910PBF | Infineon | Power Field-Effect Transistor, 10A I(D), 20V, 0.0134ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| IRF9392PBF | Infineon | Power Field-Effect Transistor, 9.8A I(D), 30V, 0.0175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| IRF9510PBF | Vishay | Power Field-Effect Transistor, 4A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRF9520NPBF | Infineon | Power Field-Effect Transistor, 6.8A I(D), 100V, 0.48ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRF9530 | Vishay | Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRF9530SPBF | Vishay | Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF9530STRLPBF | Vishay | Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF9540NS | Infineon | Power Field-Effect Transistor, 23A I(D), 100V, 0.117ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF9620 | Vishay | Power Field-Effect Transistor, 3.5A I(D), 200V, 1.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRF9630PBF | Vishay | Power Field-Effect Transistor, 6.5A I(D), 200V, 0.8ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRF9640SPBF | IR | Power Field-Effect Transistor, 11A I(D), 200V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF9Z14SPBF | Vishay | Power Field-Effect Transistor, 6.7A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF9Z14STRLPBF | Vishay | Power Field-Effect Transistor, 6.7A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRF9Z24NPBF | Infineon | Power Field-Effect Transistor, 12A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRF9Z34S | Siliconix | Power Field-Effect Transistor, 18A I(D), 60V, 0.14ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRFB31N20DPBF | Infineon | Power Field-Effect Transistor, 31A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRFB4127PBF | Infineon | Power Field-Effect Transistor, 76A I(D), 200V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRFB41N15DPBF | Infineon | Power Field-Effect Transistor, 41A I(D), 150V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRFB59N10DPBF | Infineon | Power Field-Effect Transistor, 59A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRFBE30STRLPBF | Vishay | Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRFD014PBF | Vishay | Power Field-Effect Transistor, 1.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRFD024PBF | Vishay | Power Field-Effect Transistor, 2.5A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRFD9024PBF | Vishay | Power Field-Effect Transistor, 1.6A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRFF320 | Infineon | Power Field-Effect Transistor, 2A I(D), 400V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF | on request |
| IRFH5053TRPBF | Infineon | Power Field-Effect Transistor, 9.3A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRFH8201TRPBF | Infineon | Power Field-Effect Transistor, 100A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| IRFHM8235TRPBF | Infineon | Power Field-Effect Transistor, 16A I(D), 25V, 0.0077ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRFI4212H-117P | Infineon | Power Field-Effect Transistor, 11A I(D), 100V, 0.0725ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRFI540NPBF | Infineon | Power Field-Effect Transistor, 20A I(D), 100V, 0.052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRFIZ14GPBF | Vishay | Power Field-Effect Transistor, 8A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRFL110TRPBF | Vishay | Power Field-Effect Transistor | on request |
| IRFL9014TRPBF | Vishay | Power Field-Effect Transistor, 1.8A I(D), 60V, 0.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | on request |
| IRFP150PBF | Vishay | Power Field-Effect Transistor, 41A I(D), 100V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | on request |
| IRFP250NPBF | Infineon | Power Field-Effect Transistor, 30A I(D), 200V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | on request |
| IRFP260PBF | Vishay | Power Field-Effect Transistor, 46A I(D), 200V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | on request |
| IRFP4227PBF | Infineon | Power Field-Effect Transistor, 65A I(D), 200V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | on request |
| IRFP90N20DPBF | Infineon | Power Field-Effect Transistor, 90A I(D), 200V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | on request |
| IRFPS3810PBF | Infineon | Power Field-Effect Transistor, 105A I(D), 100V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRFR014 | Siliconix | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| IRFR014TR | Vishay | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR110TR | Vishay | Power Field-Effect Transistor, 4.3A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR1205TR | IR | Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR18N15DTRPBF | IR | Power Field-Effect Transistor, 18A I(D), 150V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR1N60ATR | Vishay | Power Field-Effect Transistor, 1.4A I(D), 600V, 7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR220 | NXP | Power Field-Effect Transistor, 4.8A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| IRFR220NTRPBF | Infineon | Power Field-Effect Transistor, 5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR2405PBF | Infineon | Power Field-Effect Transistor, 30A I(D), 55V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR310 | Siliconix | Power Field-Effect Transistor, 1.7A I(D), 400V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| IRFR3505PBF | Infineon | Power Field-Effect Transistor, 30A I(D), 55V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR3910PBF | Infineon | Power Field-Effect Transistor, 16A I(D), 100V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR4104PBF | Infineon | Power Field-Effect Transistor, 42A I(D), 40V, 0.0055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR48ZPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR7440PBF | Infineon | Power Field-Effect Transistor, 90A I(D), 40V, 0.0024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR825TRPBF | Infineon | Power Field-Effect Transistor, 6A I(D), 500V, 1.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR9010TRPBF | Vishay | Power Field-Effect Transistor, 5.3A I(D), 50V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| IRFR9020 | Vishay | Power Field-Effect Transistor, 9.9A I(D), 50V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR9024 | IR | Power Field-Effect Transistor, 8.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR9024NPBF | Infineon | Power Field-Effect Transistor, 11A I(D), 55V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR9110PBF | Vishay | Power Field-Effect Transistor, 3.1A I(D), 100V, 1.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR9120 | Vishay | Power Field-Effect Transistor, 5.6A I(D), 100V, 0.6ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRFR9310 | Siliconix | Power Field-Effect Transistor, 1.8A I(D), 400V, 7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| IRFS1Z0TRL | IR | Power Field-Effect Transistor, 0.82A I(D), 100V, 2.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA | on request |
| IRFS3006-7PPBF | Infineon | Power Field-Effect Transistor, 240A I(D), 60V, 0.0021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263 | on request |
| IRFS4227PBF | Infineon | Power Field-Effect Transistor, 62A I(D), 200V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRFS4227TRLPBF | Infineon | Power Field-Effect Transistor, 62A I(D), 200V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRFS59N10DPBF | Infineon | Power Field-Effect Transistor, 59A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRFS59N10DTRLP | Infineon | Power Field-Effect Transistor, 59A I(D), 100V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRFSL4710 | IR | Power Field-Effect Transistor, 75A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA | on request |
| IRFU1018EPBF | Infineon | Power Field-Effect Transistor, 56A I(D), 60V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | on request |
| IRFU320PBF | IR | Power Field-Effect Transistor, 3.1A I(D), 400V, 1.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | on request |
| IRFU3709ZPBF | Infineon | Power Field-Effect Transistor, 30A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | on request |
| IRFU9210PBF | Vishay | Power Field-Effect Transistor, 1.9A I(D), 200V, 3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251 | on request |
| IRFZ34N | Infineon | Power Field-Effect Transistor, 26A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRFZ44N | IR | Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRFZ44NSPBF | Infineon | Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRFZ48STRR | IR | Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRFZ48ZPBF | IR | Power Field-Effect Transistor, 61A I(D), 55V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRL3103PBF | Infineon | Power Field-Effect Transistor, 64A I(D), 30V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRL3303SPBF | IR | Power Field-Effect Transistor, 38A I(D), 30V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRL3402PBF | IR | Power Field-Effect Transistor, 85A I(D), 20V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRL3502SPBF | IR | Power Field-Effect Transistor, 110A I(D), 20V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRL630S | Vishay | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRL630STRRPBF | Vishay | Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRL640STRLPBF | Vishay | Power Field-Effect Transistor, 17A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IRLD024 | Vishay | Power Field-Effect Transistor, 2.5A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRLD120PBF | Vishay | Power Field-Effect Transistor, 1.3A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRLIB4343PBF | IR | Power Field-Effect Transistor, 19A I(D), 55V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| IRLL014N | IR | Power Field-Effect Transistor, 2A I(D), 55V, 0.14ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | on request |
| IRLL110TR | Siliconix | Power Field-Effect Transistor, 1.5A I(D), 100V, 0.54ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | on request |
| IRLL2705 | Infineon | Power Field-Effect Transistor, 5.2A I(D), 55V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | on request |
| IRLMS1503TRPBF | Infineon | Power Field-Effect Transistor, 3.2A I(D), 30V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRLMS1902TRPBF | Infineon | Power Field-Effect Transistor, 3.2A I(D), 20V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IRLP3034PBF | Infineon | Power Field-Effect Transistor, 195A I(D), 40V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | on request |
| IRLR014TRPBF | Vishay | Power Field-Effect Transistor, 7.7A I(D), 60V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| IRLR024NTR | IR | Power Field-Effect Transistor, 17A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRLR2703 | Infineon | Power Field-Effect Transistor, 20A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRLR2905PBF | Infineon | Power Field-Effect Transistor, 20A I(D), 55V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRLR2905ZPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRLR2908PBF | Infineon | Power Field-Effect Transistor, 30A I(D), 80V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRLR3103PBF | Infineon | Power Field-Effect Transistor, 20A I(D), 30V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRLR3705ZTRPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRLR3717TRPBF | Infineon | Power Field-Effect Transistor, 30A I(D), 20V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| IRLU3636PBF | Infineon | Power Field-Effect Transistor, 99A I(D), 60V, 0.0083ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | on request |
| IRLU3705ZPBF | Infineon | Power Field-Effect Transistor, 42A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | on request |
| IRLZ34NS | Infineon | Power Field-Effect Transistor, 30A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| IXFH36N60P | Littelfuse | Power Field-Effect Transistor, 36A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | on request |
| IXFR140N20P | IXYS | Power Field-Effect Transistor, 90A I(D), 200V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| IXTH50N20 | IXYS | Power Field-Effect Transistor, 50A I(D), 200V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | on request |
| IXTM5N100A | IXYS | Power Field-Effect Transistor, 5A I(D), 1000V, 2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA | on request |
| LND150N8-G | Microchip | Power Field-Effect Transistor | on request |
| MPS2907ARLRAG | Onsemi | Power Field-Effect Transistor | on request |
| MTB52N06VLT4 | Onsemi | Power Field-Effect Transistor, 52A I(D), 60V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| MTD20P06HDLT4 | Onsemi | Power Field-Effect Transistor, 15A I(D), 60V, 0.175ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| MTD3055V-1 | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| MTP12P10G | Onsemi | Power Field-Effect Transistor, 12A I(D), 100V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| MTP3055EL | Motorola | Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| NP110N055PUG-E1-AZ | Renesas | Power Field-Effect Transistor, 110A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| NP88N04EHE-E1-AY | Renesas | Power Field-Effect Transistor, 88A I(D), 40V, 0.0043ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| NTB45N06G | Onsemi | Power Field-Effect Transistor, 45A I(D), 60V, 0.026ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| NTD20N06G | Onsemi | Power Field-Effect Transistor, 20A I(D), 60V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| NTD2955G | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.18ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| NTD3055-094G | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| NTD3055L104-1G | Onsemi | Power Field-Effect Transistor, 12A I(D), 60V, 0.104ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| NTD32N06LT4G | Onsemi | Power Field-Effect Transistor, 32A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| NTD4302T4G | Onsemi | Power Field-Effect Transistor, 8.4A I(D), 30V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| NTD6416ANLT4G | Onsemi | Power Field-Effect Transistor, 19A I(D), 100V, 0.074ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| NTDV20P06LT4G | Onsemi | Power Field-Effect Transistor, 15.5A I(D), 60V, 0.15ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| NTGS3433T1 | Onsemi | Power Field-Effect Transistor | on request |
| NTMFS4934NT1G | Onsemi | Power Field-Effect Transistor | on request |
| NVTFS5826NLWFTAG | Onsemi | Power Field-Effect Transistor, 20A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| PH8230E | Nexperia | Power Field-Effect Transistor, 67A I(D), 30V, 0.0132ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 | on request |
| PHN210T | Nexperia | Power Field-Effect Transistor, 3.4A I(D), 30V, 0.1ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| PSMN6R0-30YLB | Nexperia | Power Field-Effect Transistor, 71A I(D), 30V, 0.0081ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 | on request |
| PSMNR90-80ASEJ | Nexperia | Power Field-Effect Transistor, 495A I(D), 80V, 0.0009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-359 | on request |
| RFD3055SM | Fairchild Semi | Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| RFP4N05L | Fairchild Semi | Power Field-Effect Transistor, 4A I(D), 50V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| RFP70N06 | Onsemi | Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| RJK0330DPB-01-J0 | Renesas | Power Field-Effect Transistor, 45A I(D), 30V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| RJK0629JPE-00-J3 | Renesas | Power Field-Effect Transistor, 85A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| RLP1N06CLE | Intersil | Power Field-Effect Transistor, 3A I(D), 55V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| RQA130N03TB | Rohm | Power Field-Effect Transistor, 13A I(D), 30V, 0.0117ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SCT10N120 | ST Micro | Power Field-Effect Transistor, 12A I(D), 1200V, 0.69ohm, 1-Element, N-Channel, Silicon Carbide, Metal-oxide Semiconductor FET | on request |
| SI2306DS-T1-E3 | Vishay | Power Field-Effect Transistor, 3.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| SI4465DY-T1 | Siliconix | Power Field-Effect Transistor, 14A I(D), 8V, 0.009ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SI4467DY | Siliconix | Power Field-Effect Transistor, 12A I(D), 12V, 0.011ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SI4532DY | Onsemi | Power Field-Effect Transistor, 3.9A I(D), 30V, 0.065ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SI4559EY-T1-E3 | Vishay | Power Field-Effect Transistor, 4.5A I(D), 60V, 0.055ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| SI4888DY | Vishay | Power Field-Effect Transistor, 11A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| SI4920DY | Vishay | Power Field-Effect Transistor, 6.9A I(D), 30V, 0.025ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SI7117DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 1.1A I(D), 150V, 1.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SI7120ADN-T1-GE3 | Vishay | Power Field-Effect Transistor, 6A I(D), 60V, 0.021ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SI7120DN-T1 | Vishay | Power Field-Effect Transistor, 6.3A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| SI7409ADN-T1-E3 | Vishay | Power Field-Effect Transistor, 7A I(D), 30V, 0.019ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SI7414DN-T1 | Vishay | Power Field-Effect Transistor, 5.6A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| SI7415DN-T1-E3 | Vishay | Power Field-Effect Transistor, 3.6A I(D), 60V, 0.065ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SI7434DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 2.3A I(D), 250V, 0.155ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SI7460DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 11A I(D), 60V, 0.0096ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SI7464DP-T1-E3 | Vishay | Power Field-Effect Transistor, 1.8A I(D), 200V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SI7812DN-T1-E3 | Vishay | Power Field-Effect Transistor, 7.2A I(D), 75V, 0.037ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SI7848BDP-T1-GE3 | Vishay | Power Field-Effect Transistor, 16A I(D), 40V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SI7923DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 4.3A I(D), 30V, 0.047ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SI8499DB-T2-E1 | Vishay | Power Field-Effect Transistor, 16A I(D), 20V, 0.046ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SI9945AEY | Vishay | Power Field-Effect Transistor, 3.7A I(D), 60V, 0.08ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SIA426DJ-T1-GE3 | Vishay | Power Field-Effect Transistor, 4.5A I(D), 20V, 0.0236ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SIA433EDJ-T1-GE3 | Vishay | Power Field-Effect Transistor, 12A I(D), 20V, 0.018ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SIA436DJ-T1-GE3 | Vishay | Power Field-Effect Transistor, 12A I(D), 8V, 0.0094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SIA444DJT-T1-GE3 | Vishay | Power Field-Effect Transistor, 12A I(D), 30V, 0.017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SIA921EDJ-T1-GE3 | Vishay | Power Field-Effect Transistor, 4.5A I(D), 20V, 0.059ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SIB404DK-T1-GE3 | Vishay | Power Field-Effect Transistor, 9A I(D), 12V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SIB433EDK-T1-GE3 | Vishay | Power Field-Effect Transistor, 9A I(D), 20V, 0.058ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SIB456DK-T1-GE3 | Vishay | Power Field-Effect Transistor, 6.3A I(D), 100V, 0.185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SIE868DF-T1-GE3 | Vishay | Power Field-Effect Transistor, 35A I(D), 40V, 0.0029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SIHB24N65E-GE3 | Vishay | Power Field-Effect Transistor, 24A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| SIJ478DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 60A I(D), 80V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SIR462DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 18.9A I(D), 30V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SIR492DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 27A I(D), 12V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SIR802DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 30A I(D), 20V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SIR836DP-T1-GE3 | Vishay | Power Field-Effect Transistor, 21A I(D), 40V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SIS413DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 18A I(D), 30V, 0.0094ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SIS415DNT-T1-GE3 | Vishay | Power Field-Effect Transistor, 35A I(D), 20V, 0.004ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SISS10DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 60A I(D), 40V, 0.00265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SISS98DN-T1-GE3 | Vishay | Power Field-Effect Transistor, 14.1A I(D), 200V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SK85MH10T | Semikron | Power Field-Effect Transistor, 80A I(D), 100V, 0.0075ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SKM180A020 | Semikron | Power Field-Effect Transistor, 180A I(D), 200V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SPA20N60C3 | Infineon | Power Field-Effect Transistor, 20.7A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| SPB07N60C3 | Infineon | Power Field-Effect Transistor, 7.3A I(D), 600V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| SPP04N50C3 | Infineon | Power Field-Effect Transistor, 4.5A I(D), 500V, 0.95ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| SPP08N80C3 | Infineon | Power Field-Effect Transistor, 8A I(D), 800V, 0.65ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| SPP11N80C3 | Infineon | Power Field-Effect Transistor, 11A I(D), 800V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| SQ2319ES-T1-GE3 | Vishay | Power Field-Effect Transistor, 3.3A I(D), 40V, 0.082ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236 | on request |
| SQ4917EY-T1_GE3 | Vishay | Power Field-Effect Transistor, 8A I(D), 60V, 0.048ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA | on request |
| SQD100N04-3M6L_GE3 | Vishay | Power Field-Effect Transistor, 100A I(D), 40V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| SQD23N06-31L_GE3 | Vishay | Power Field-Effect Transistor, 23A I(D), 60V, 0.031ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| SQD50N05-11L_GE3 | Vishay | Power Field-Effect Transistor, 50A I(D), 50V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| SQD50P08-28_GE3 | Vishay | Power Field-Effect Transistor, 48A I(D), 80V, 0.028ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| SQJ402EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 32A I(D), 100V, 0.011ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SQJ403BEEP-T1_GE3 | Vishay | Power Field-Effect Transistor, 30A I(D), 30V, 0.0085ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SQJ443EP-T1-GE3 | Vishay | Power Field-Effect Transistor, 40A I(D), 40V, 0.029ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SQJ459EP-T1_GE3 | Vishay | Power Field-Effect Transistor, 52A I(D), 60V, 0.018ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SQJ980AEP-T1_GE3 | Vishay | Power Field-Effect Transistor, 17A I(D), 75V, 0.05ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SQJQ402E-T1_GE3 | Vishay | Power Field-Effect Transistor, 200A I(D), 40V, 0.0017ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| SQM120N10-3M8_GE3 | Vishay | Power Field-Effect Transistor, 120A I(D), 100V, 0.0038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| STB140NF55T4 | ST Micro | Power Field-Effect Transistor, 80A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| STB30NE06L | ST Micro | Power Field-Effect Transistor, 30A I(D), 60V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| STB55NE06 | ST Micro | Power Field-Effect Transistor, 55A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| STB60NF06LT4 | ST Micro | Power Field-Effect Transistor, 60A I(D), 60V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| STB70NF02LT4 | ST Micro | Power Field-Effect Transistor, 70A I(D), 20V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| STB75NF75LT4 | ST Micro | Power Field-Effect Transistor, 75A I(D), 75V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| STD11N50M2 | ST Micro | Power Field-Effect Transistor, 8A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| STD12NF06T4 | ST Micro | Power Field-Effect Transistor, 12A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| STD16N65M2 | ST Micro | Power Field-Effect Transistor | on request |
| STD1NB50-1 | ST Micro | Power Field-Effect Transistor, 1.4A I(D), 500V, 9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA | on request |
| STD2NK100Z | ST Micro | Power Field-Effect Transistor, 1.85A I(D), 1000V, 8.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| STD30NF06LT4 | ST Micro | Power Field-Effect Transistor, 35A I(D), 60V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| STD30NF06T4 | ST Micro | Power Field-Effect Transistor, 28A I(D), 60V, 0.028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| STD35NF06L | ST Micro | Power Field-Effect Transistor, 35A I(D), 60V, 0.02ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| STD3NK80ZT4 | ST Micro | Power Field-Effect Transistor, 2.5A I(D), 800V, 4.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| STD5NM50T4 | ST Micro | Power Field-Effect Transistor, 7.5A I(D), 500V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| STD7NM80 | ST Micro | Power Field-Effect Transistor, 6.5A I(D), 800V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| STD7NS20T4 | ST Micro | Power Field-Effect Transistor, 7A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | on request |
| STD86N3LH5 | ST Micro | Power Field-Effect Transistor, 80A I(D), 30V, 0.0065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| STE110NA20 | ST Micro | Power Field-Effect Transistor, 110A I(D), 200V, 0.019ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| STE145N65M5 | ST Micro | Power Field-Effect Transistor | on request |
| STE26NA90 | ST Micro | Power Field-Effect Transistor, 26A I(D), 900V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| STF12N120K5 | ST Micro | Power Field-Effect Transistor | on request |
| STF40NF20 | ST Micro | Power Field-Effect Transistor, 40A I(D), 200V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STF7N105K5 | ST Micro | Power Field-Effect Transistor, 4A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| STF8NK100Z | ST Micro | Power Field-Effect Transistor, 6.5A I(D), 1000V, 1.85ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STFI9N60M2 | ST Micro | Power Field-Effect Transistor | on request |
| STFW40N60M2 | ST Micro | Power Field-Effect Transistor | on request |
| STL10N65M2 | ST Micro | Power Field-Effect Transistor | on request |
| STL12P6F6 | ST Micro | Power Field-Effect Transistor | on request |
| STL160NS3LLH7 | ST Micro | Power Field-Effect Transistor | on request |
| STL16N65M2 | ST Micro | Power Field-Effect Transistor, 7.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| STL35N6F3 | ST Micro | Power Field-Effect Transistor, 35A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| STL7DN6LF3 | ST Micro | Power Field-Effect Transistor, 20A I(D), 60V, 0.06ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| STN4NF06L | ST Micro | Power Field-Effect Transistor, 4A I(D), 60V, 0.12ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| STP120NF10 | ST Micro | Power Field-Effect Transistor, 110A I(D), 100V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STP12N65M5 | ST Micro | Power Field-Effect Transistor, 8.5A I(D), 650V, 0.43ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STP140NF75 | ST Micro | Power Field-Effect Transistor, 120A I(D), 75V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STP16NF06L | ST Micro | Power Field-Effect Transistor, 16A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STP19NB20FP | ST Micro | Power Field-Effect Transistor, 10A I(D), 200V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STP19NF20 | ST Micro | Power Field-Effect Transistor, 15A I(D), 200V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STP24NF10 | ST Micro | Power Field-Effect Transistor, 26A I(D), 100V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STP25NM60ND | ST Micro | Power Field-Effect Transistor, 21A I(D), 600V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STP3N150 | ST Micro | Power Field-Effect Transistor, 2.5A I(D), 1500V, 9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STP40NF20 | ST Micro | Power Field-Effect Transistor, 40A I(D), 200V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STP55NF06FP | ST Micro | Power Field-Effect Transistor, 50A I(D), 60V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STP60NF10 | ST Micro | Power Field-Effect Transistor, 80A I(D), 100V, 0.023ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STP6N95K5 | ST Micro | Power Field-Effect Transistor, 9A I(D), 950V, 1.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STP6NB80 | ST Micro | Power Field-Effect Transistor, 5.7A I(D), 800V, 1.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STP95N4F3 | ST Micro | Power Field-Effect Transistor, 80A I(D), 40V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STP9NC60FP | ST Micro | Power Field-Effect Transistor, 9A I(D), 600V, 0.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| STQ1NK80ZR-AP | ST Micro | Power Field-Effect Transistor, 0.3A I(D), 800V, 16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92 | on request |
| STS25NH3LL | ST Micro | Power Field-Effect Transistor, 25A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| STW11NK90Z | ST Micro | Power Field-Effect Transistor, 9.2A I(D), 900V, 0.98ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | on request |
| STW18N60DM2 | ST Micro | Power Field-Effect Transistor | on request |
| STW20N95K5 | ST Micro | Power Field-Effect Transistor, 15.5A I(D), 950V, 0.33ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AA | on request |
| STW25N95K3 | ST Micro | Power Field-Effect Transistor, 22A I(D), 950V, 0.36ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | on request |
| STW45NM60 | ST Micro | Power Field-Effect Transistor, 45A I(D), 600V, 0.11ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC | on request |
| STW75NF20 | ST Micro | Power Field-Effect Transistor, 75A I(D), 200V, 0.034ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AB | on request |
| STW88N65M5 | ST Micro | Power Field-Effect Transistor, 84A I(D), 650V, 0.029ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | on request |
| STW9N150 | ST Micro | Power Field-Effect Transistor, 8A I(D), 1500V, 2.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247 | on request |
| SUB70N06-14 | Vishay | Power Field-Effect Transistor, 70A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| SUD06N10-225L-E3 | Siliconix | Power Field-Effect Transistor, 6.5A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| SUD15N15-95-E3 | Vishay | Power Field-Effect Transistor, 15A I(D), 150V, 0.095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| SUD19N20-90-E3 | Vishay | Power Field-Effect Transistor, 19A I(D), 200V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| SUD40N06-25L-E3 | Vishay | Power Field-Effect Transistor, 30A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| SUD45P03-15 | Siliconix | Power Field-Effect Transistor, 13A I(D), 30V, 0.024ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| SUD45P03-15A | Vishay | Power Field-Effect Transistor, 15A I(D), 30V, 0.015ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| SUD50N02-06P-E3 | Vishay | Power Field-Effect Transistor, 26A I(D), 20V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| SUD50N03-06P-E3 | Vishay | Power Field-Effect Transistor, 84A I(D), 30V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| SUD70090E-GE3 | Vishay | Power Field-Effect Transistor, 50A I(D), 100V, 0.0089ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | on request |
| SUM110N08-10 | Siliconix | Power Field-Effect Transistor, 110A I(D), 75V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| SUM110N10-09-E3 | Vishay | Power Field-Effect Transistor, 110A I(D), 100V, 0.0095ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| SUM110P04-04L-E3 | Vishay | Power Field-Effect Transistor, 110A I(D), 40V, 0.0042ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| SUM40N15-38-E3 | Vishay | Power Field-Effect Transistor, 40A I(D), 150V, 0.038ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| SUM60N10-17-E3 | Vishay | Power Field-Effect Transistor, 60A I(D), 100V, 0.0165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| SUM80090E-GE3 | Vishay | Power Field-Effect Transistor, 128A I(D), 150V, 0.0105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| SUM90P10-19L-E3 | Vishay | Power Field-Effect Transistor, 17.2A I(D), 100V, 0.019ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB | on request |
| SUP75N05-06A | Siliconix | Power Field-Effect Transistor, 75A I(D), 50V, 0.006ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| SUP75N05-06A-E3 | Vishay | Power Field-Effect Transistor, 75A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| SUP75P03-07-E3 | Vishay | Power Field-Effect Transistor, 75A I(D), 30V, 0.007ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| SUP75P05-08-E3 | Vishay | Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB | on request |
| TK130F06K3(TE24L) | Toshiba | Power Field-Effect Transistor, 130A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET | on request |
| TK16N60W,S1VF | Toshiba | Power Field-Effect Transistor | on request |
| TP2502N8 | Supertex | Power Field-Effect Transistor, 0.63A I(D), 20V, 2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA | on request |
| TPC8407 | Toshiba | Power Field-Effect Transistor | on request |
| UJN1208K | USCI | Power Field-Effect Transistor, 21A I(D), 1200V, 0.095ohm, 1-Element, N-Channel, Silicon Carbide, Junction FET, TO-247 | on request |
| VQ1000P | Vishay | Power Field-Effect Transistor, 0.025A I(D), 60V, 5.5ohm, 4-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| ZXMC10A816N8TC | Diodes | Power Field-Effect Transistor, 1.7A I(D), 100V, 0.23ohm, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET | on request |
| ZXMS6002GTA | Diodes | Power Field-Effect Transistor, 1.6A I(D), 60V, 0.675ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA | on request |
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