BAUTEIL:
PHD2N50E Power Field-Effect Transistors
NXP (NXP SEMICONDUCTORS)
ComSIT hat 12,500 Stück PHD2N50E von NXP (NXP SEMICONDUCTORS) auf Lager. Power Field-Effect Transistor, 2A I(D), 500V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET. Lebenszyklus: Discontinued / Discontinued. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von NXP · Alle Power Field-Effect Transistors
| STOCK | 12500 |
| PARTNUMBER | PHD2N50E |
| MANUFACTURER | NXP (NXP SEMICONDUCTORS) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | AVALANCHE ENERGY RATED POWERMOS TRANSISTOR |
| DESCRIPTION | Power Field-Effect Transistor, 2A I(D), 500V, 5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| MFR. PKG. DESC. | SOT-428, 3 PIN |
| LC CODE | 5.00 |
| CAGE CODE | H1R01, H0H68, H1V34 |
| PART STATUS | Discontinued |
| LIFECYCLESTAGE | Discontinued |
| STOCK | 12500 |
