BAUTEIL:
PHT8N06LT Power Field-Effect Transistors
NXP (NXP SEMICONDUCTORS)
ComSIT hat 3,565 Stück PHT8N06LT von NXP (NXP SEMICONDUCTORS) auf Lager. Power Field-Effect Transistor, 2.2A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET. Lebenszyklus: Transferred / Discontinued-Transferred. RoHS-konform. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von NXP · Alle Power Field-Effect Transistors
| STOCK | 3565 |
| PARTNUMBER | PHT8N06LT |
| MANUFACTURER | NXP (NXP SEMICONDUCTORS) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | TRENCHMOS TRANSISTOR LOGIC LEVEL FET |
| DESCRIPTION | Power Field-Effect Transistor, 2.2A I(D), 55V, 0.08ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| MFR. PKG. DESC. | PLASTIC, SOT-223, 4 PIN |
| LC CODE | 5.00 |
| CAGE CODE | H1R01, H0H68, H1V34 |
| PART STATUS | Transferred |
| LIFECYCLESTAGE | Discontinued-Transferred |
| STOCK | 3565 |
