BAUTEIL:
NIF9N05CLT1G Power Field-Effect Transistors
Onsemi
ComSIT hat 810 Stück NIF9N05CLT1G von Onsemi auf Lager. Power Field-Effect Transistor, 2.6A I(D), 52V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA. Lebenszyklus: NRFND / Decline. RoHS-konform. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von Onsemi · Alle Power Field-Effect Transistors
| STOCK | 810 |
| PARTNUMBER | NIF9N05CLT1G |
| MANUFACTURER | Onsemi (ONSEMI) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | 2.6 A, 52 V, N-CHANNEL, LOGIC LEVEL, CLAMPED W/ ESD PROTECTED POWER MOSFET IN A SOT-223 PACKAGE |
| DESCRIPTION | Power Field-Effect Transistor, 2.6A I(D), 52V, 0.125ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA |
| MFR. PKG. DESC. | LEAD FREE, CASE 318E-04, TO-261, 4 PIN |
| LC CODE | 4.00 |
| CAGE CODE | 1MQ07, 5V1P1, 59PE1 |
| ALERT DATE | 20-Apr-2021 |
| PART STATUS | NRFND |
| LIFECYCLESTAGE | Decline |
| STOCK | 810 |
