BAUTEIL:
ZVN2110GTA Power Field-Effect Transistors
Diodes (DIODES INC)
ComSIT hat 254 Stück ZVN2110GTA von Diodes (DIODES INC) auf Lager. Power Field-Effect Transistor, 0.5A I(D), 100V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET. Lebenszyklus: Active / Decline. RoHS-konform. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von Diodes · Alle Power Field-Effect Transistors
| STOCK | 254 |
| PARTNUMBER | ZVN2110GTA |
| MANUFACTURER | Diodes (DIODES INC) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | SOT223 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
| DESCRIPTION | Power Field-Effect Transistor, 0.5A I(D), 100V, 4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| MFR. PKG. DESC. | SOT-223, 4 PIN |
| LC CODE | 4.00 |
| CAGE CODE | 12060,6M0U4 |
| ALERT DATE | 05-Dec-2025 |
| PART STATUS | Active |
| LIFECYCLESTAGE | Decline |
| STOCK | 254 |
