BAUTEIL:
BSG0812ND Power Field-Effect Transistors
Infineon (INFINEON TECHNOLOGIES AG)
ComSIT hat 16 Stück BSG0812ND von Infineon (INFINEON TECHNOLOGIES AG) auf Lager. Power Field-Effect Transistor, 49A I(D), 25V, 0.0046ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET. Lebenszyklus: Active / Mature. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von Infineon · Alle Power Field-Effect Transistors
| STOCK | 16 |
| PARTNUMBER | BSG0812ND |
| MANUFACTURER | Infineon (INFINEON TECHNOLOGIES AG) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | POWER BLOCK MOSFET |
| DESCRIPTION | Power Field-Effect Transistor, 49A I(D), 25V, 0.0046ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| LC CODE | 3.00 |
| CAGE CODE | C6489, 4KYR2 |
| ALERT DATE | 05-Dec-2025 |
| PART STATUS | Active |
| LIFECYCLESTAGE | Mature |
| STOCK | 16 |
