BAUTEIL:
FDC637BNZ Power Field-Effect Transistors
Onsemi
ComSIT hat 2,060 Stück FDC637BNZ von Onsemi auf Lager. Power Field-Effect Transistor, 6.2A I(D), 20V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET. Lebenszyklus: Active / Mature. RoHS-konform. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von Onsemi · Alle Power Field-Effect Transistors
| STOCK | 2060 |
| PARTNUMBER | FDC637BNZ |
| MANUFACTURER | Onsemi (ONSEMI) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | N-CHANNEL 2.5V SPECIFIED POWERTRENCH MOSFET |
| DESCRIPTION | Power Field-Effect Transistor, 6.2A I(D), 20V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| MFR. PKG. DESC. | SUPERSOT-6 |
| LC CODE | 3.00 |
| CAGE CODE | 1MQ07, 59PE1, 9CDY7, 9KJZ2 |
| ALERT DATE | 26-Mar-2025 |
| PART STATUS | Active |
| LIFECYCLESTAGE | Mature |
| STOCK | 2060 |
