BAUTEIL:
BSP135H6327 Power Field-Effect Transistors
Infineon (INFINEON TECHNOLOGIES AG)
ComSIT hat 2,290 Stück BSP135H6327 von Infineon (INFINEON TECHNOLOGIES AG) auf Lager. Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET. Lebenszyklus: Active / Mature. RoHS-konform. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von Infineon · Alle Power Field-Effect Transistors
| STOCK | 2290 |
| PARTNUMBER | BSP135H6327 |
| MANUFACTURER | Infineon (INFINEON TECHNOLOGIES AG) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | SIPMOS SMALL SIGNAL TRANSISTOR |
| DESCRIPTION | Power Field-Effect Transistor, 0.12A I(D), 600V, 45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| MFR. PKG. DESC. | GREEN, PLASTIC PACKAGE-4 |
| LC CODE | 3.00 |
| CAGE CODE | C6489, 4KYR2 |
| ALERT DATE | 26-Mar-2025 |
| PART STATUS | Active |
| LIFECYCLESTAGE | Mature |
| STOCK | 2290 |
