BAUTEIL:
IPB60R055CFD7ATMA1 Power Field-Effect Transistors
Infineon (INFINEON TECHNOLOGIES AG)
ComSIT hat 340 Stück IPB60R055CFD7ATMA1 von Infineon (INFINEON TECHNOLOGIES AG) auf Lager. Power Field-Effect Transistor, 38A I(D), 600V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB. Lebenszyklus: NRFND / Decline. RoHS-konform. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von Infineon · Alle Power Field-Effect Transistors
| STOCK | 340 |
| PARTNUMBER | IPB60R055CFD7ATMA1 |
| MANUFACTURER | Infineon (INFINEON TECHNOLOGIES AG) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | MOSFET |
| DESCRIPTION | Power Field-Effect Transistor, 38A I(D), 600V, 0.055ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
| MFR. PKG. DESC. | TO-263, D2PAK-3/2 |
| LC CODE | 4.00 |
| CAGE CODE | C6489, 4KYR2 |
| ALERT DATE | 21-May-2025 |
| PART STATUS | NRFND |
| LIFECYCLESTAGE | Decline |
| STOCK | 340 |
