BAUTEIL:
SIS888DN-T1-GE3 / SIS888DNT1GE3 Power Field-Effect Transistors
Vishay (VISHAY INTERTECHNOLOGY INC)
ComSIT hat 9,000 Stück SIS888DN-T1-GE3 von Vishay (VISHAY INTERTECHNOLOGY INC) auf Lager. Power Field-Effect Transistor, 20.2A I(D), 150V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET. Lebenszyklus: NRFND / Decline. RoHS-konform. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von Vishay · Alle Power Field-Effect Transistors
| STOCK | 9000 |
| PARTNUMBER | SIS888DN-T1-GE3 |
| MANUFACTURER | Vishay (VISHAY INTERTECHNOLOGY INC) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | N-CHANNEL 150 V (D-S) MOSFET |
| DESCRIPTION | Power Field-Effect Transistor, 20.2A I(D), 150V, 0.058ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| LC CODE | 4.00 |
| CAGE CODE | 18612, 0LCA7, K4184, C2817, 09969 |
| ALERT DATE | 12-Feb-2024 |
| PART STATUS | NRFND |
| LIFECYCLESTAGE | Decline |
| STOCK | 9000 |
