BAUTEIL:
SQJ412EP-T1_GE3 / SQJ412EPT1GE3 Power Field-Effect Transistors
Vishay (VISHAY INTERTECHNOLOGY INC)
ComSIT hat 3,000 Stück SQJ412EP-T1_GE3 von Vishay (VISHAY INTERTECHNOLOGY INC) auf Lager. Power Field-Effect Transistor, 32A I(D), 40V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET. Lebenszyklus: NRFND / Decline. RoHS-konform. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von Vishay · Alle Power Field-Effect Transistors
| STOCK | 3000 |
| PARTNUMBER | SQJ412EP-T1_GE3 |
| MANUFACTURER | Vishay (VISHAY INTERTECHNOLOGY INC) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | AUTOMOTIVE N-CHANNEL 40 V (D-S) 175 DEGREE CELSIUS MOSFET |
| DESCRIPTION | Power Field-Effect Transistor, 32A I(D), 40V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| MFR. PKG. DESC. | HALOGEN FREE AND ROHS COMPLIANT, POWERPAK, SO-8L, 4 PIN |
| LC CODE | 4.00 |
| CAGE CODE | 18612, 0LCA7, K4184, C2817, 09969 |
| ALERT DATE | 23-Aug-2024 |
| PART STATUS | NRFND |
| LIFECYCLESTAGE | Decline |
| STOCK | 3000 |
