BAUTEIL:
SIHA2N80E-GE3 / SIHA2N80EGE3 Power Field-Effect Transistors
Vishay (VISHAY INTERTECHNOLOGY INC)
ComSIT hat 1,000 Stück SIHA2N80E-GE3 von Vishay (VISHAY INTERTECHNOLOGY INC) auf Lager. Power Field-Effect Transistor, 2.8A I(D), 800V, 2.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB. Lebenszyklus: Active / Mature. RoHS-konform. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von Vishay · Alle Power Field-Effect Transistors
| STOCK | 1000 |
| PARTNUMBER | SIHA2N80E-GE3 |
| MANUFACTURER | Vishay (VISHAY INTERTECHNOLOGY INC) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | Power MOSFET |
| DESCRIPTION | Power Field-Effect Transistor, 2.8A I(D), 800V, 2.75ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
| MFR. PKG. DESC. | TO-220, 3 PIN |
| LC CODE | 3.00 |
| CAGE CODE | 18612, 0LCA7, K4184, C2817, 09969 |
| ALERT DATE | 05-Dec-2025 |
| PART STATUS | Active |
| LIFECYCLESTAGE | Mature |
| STOCK | 1000 |
