BAUTEIL:
FDB070AN06A0 Power Field-Effect Transistors
Onsemi
ComSIT hat 213 Stück FDB070AN06A0 von Onsemi auf Lager. Power Field-Effect Transistor, 15A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB. Lebenszyklus: Active / Mature. RoHS-konform. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von Onsemi · Alle Power Field-Effect Transistors
| STOCK | 213 |
| PARTNUMBER | FDB070AN06A0 |
| MANUFACTURER | Onsemi (ONSEMI) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | 60 V, 80 A, 7 MILLI OHM N-CHANNEL POWERTRENCH MOSFET |
| DESCRIPTION | Power Field-Effect Transistor, 15A I(D), 60V, 0.007ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
| MFR. PKG. DESC. | TO-263AB, 3/2 PIN |
| LC CODE | 3.00 |
| CAGE CODE | 1MQ07, 59PE1, 9CDY7, 9KJZ2 |
| ALERT DATE | 05-Dec-2025 |
| PART STATUS | Active |
| LIFECYCLESTAGE | Mature |
| STOCK | 213 |
