BAUTEIL:
STB23NM50N Power Field-Effect Transistors
ST Micro (STMICROELECTRONICS)
ComSIT hat 3,000 Stück STB23NM50N von ST Micro (STMICROELECTRONICS) auf Lager. Power Field-Effect Transistor, 17A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB. Lebenszyklus: Active / Mature. RoHS-konform. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von ST Micro · Alle Power Field-Effect Transistors
| STOCK | 3000 |
| PARTNUMBER | STB23NM50N |
| MANUFACTURER | ST Micro (STMICROELECTRONICS) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | 500 V, 17 A, 0.162 OHM, D2PAK MDMESH N-CHANNEL II POWER MOSFET |
| DESCRIPTION | Power Field-Effect Transistor, 17A I(D), 500V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
| MFR. PKG. DESC. | ROHS COMPLIANT, TO-263, D2PAK-3 |
| LC CODE | 3.00 |
| CAGE CODE | F8859, 50088, SCR76, 66958 |
| ALERT DATE | 05-Nov-2021 |
| PART STATUS | Active |
| LIFECYCLESTAGE | Mature |
| STOCK | 3000 |
