BAUTEIL:
PHD27NQ10T Power Field-Effect Transistors
NXP (NXP SEMICONDUCTORS)
ComSIT hat 2,500 Stück PHD27NQ10T von NXP (NXP SEMICONDUCTORS) auf Lager. Power Field-Effect Transistor, 28A I(D), 100V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET. Lebenszyklus: Discontinued / Discontinued. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von NXP · Alle Power Field-Effect Transistors
| STOCK | 2500 |
| PARTNUMBER | PHD27NQ10T |
| MANUFACTURER | NXP (NXP SEMICONDUCTORS) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | N-CHANNEL TRENCHMOS TRANSISTOR |
| DESCRIPTION | Power Field-Effect Transistor, 28A I(D), 100V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| LC CODE | 5.00 |
| CAGE CODE | H1R01, H0H68, H1V34 |
| ALERT DATE | 30-Jun-2003 |
| PART STATUS | Discontinued |
| LIFECYCLESTAGE | Discontinued |
| STOCK | 2500 |