BAUTEIL:
HAF2001-90 / HAF200190E Power Field-Effect Transistors
Renesas (RENESAS ELECTRONICS CORP)
ComSIT hat 2,227 Stück HAF2001-90 von Renesas (RENESAS ELECTRONICS CORP) auf Lager. Power Field-Effect Transistor, 20A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB. Lebenszyklus: NRFND / Decline. RoHS-konform. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von Renesas · Alle Power Field-Effect Transistors
| STOCK | 2227 |
| PARTNUMBER | HAF2001-90 |
| MANUFACTURER | Renesas (RENESAS ELECTRONICS CORP) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | POWER SWITCHING SILICON N CHANNEL MOS FET |
| DESCRIPTION | Power Field-Effect Transistor, 20A I(D), 60V, 0.065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
| MFR. PKG. DESC. | SC-46, 3 PIN |
| LC CODE | 4.00 |
| CAGE CODE | 6LTM0, 34371, 8QEK4, 4MHN3, JA033 |
| ALERT DATE | 22-Jun-2020 |
| PART STATUS | NRFND |
| LIFECYCLESTAGE | Decline |
| STOCK | 2227 |
