BAUTEIL:
RFD4N06L Power Field-Effect Transistors
Harris (HARRIS SEMICONDUCTOR)
ComSIT hat 975 Stück RFD4N06L von Harris (HARRIS SEMICONDUCTOR) auf Lager. Power Field-Effect Transistor, 4A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA. Lebenszyklus: Discontinued / Discontinued. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von Harris · Alle Power Field-Effect Transistors
| STOCK | 975 |
| PARTNUMBER | RFD4N06L |
| MANUFACTURER | Harris (HARRIS SEMICONDUCTOR) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| DESCRIPTION | Power Field-Effect Transistor, 4A I(D), 60V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA |
| LC CODE | 5.00 |
| CAGE CODE | 27410 |
| PART STATUS | Discontinued |
| LIFECYCLESTAGE | Discontinued |
| STOCK | 975 |
