BAUTEIL:
FCB20N60FTM / FCB20N60F Power Field-Effect Transistors
Onsemi
ComSIT hat 800 Stück FCB20N60FTM von Onsemi auf Lager. Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET. Lebenszyklus: NRFND / Decline. RoHS-konform. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von Onsemi · Alle Power Field-Effect Transistors
| STOCK | 800 |
| PARTNUMBER | FCB20N60FTM |
| MANUFACTURER | Onsemi (ONSEMI) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | 600 V, 20 A, 190 MILLI OHM N-CHANNEL SUPERFET FRFET MOSFET |
| DESCRIPTION | Power Field-Effect Transistor, 20A I(D), 600V, 0.19ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| MFR. PKG. DESC. | D2PAK-3 |
| LC CODE | 4.00 |
| CAGE CODE | 1MQ07, 5V1P1, 59PE1 |
| ALERT DATE | 07-Aug-2023 |
| PART STATUS | NRFND |
| LIFECYCLESTAGE | Decline |
| STOCK | 800 |
