BAUTEIL:
PHB66NQ03LT Power Field-Effect Transistors
Nexperia
ComSIT hat 795 Stück PHB66NQ03LT von Nexperia auf Lager. Power Field-Effect Transistor, 66A I(D), 25V, 0.0136ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET. Lebenszyklus: EOL / Phase-Out. RoHS-konform. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von Nexperia · Alle Power Field-Effect Transistors
| STOCK | 795 |
| PARTNUMBER | PHB66NQ03LT |
| MANUFACTURER | Nexperia (NEXPERIA) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | N-CHANNEL TRENCHMOS LOGIC LEVEL FET |
| DESCRIPTION | Power Field-Effect Transistor, 66A I(D), 25V, 0.0136ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| MFR. PKG. DESC. | D2PAK-3 |
| LC CODE | 4.00 |
| CAGE CODE | H2HX9 |
| ALERT DATE | 28-Dec-2021 |
| PART STATUS | EOL |
| LIFECYCLESTAGE | Phase-Out |
| STOCK | 795 |
