BAUTEIL:
SIHG33N65E-GE3 / SIHG33N65EGE3 Power Field-Effect Transistors
Vishay (VISHAY INTERTECHNOLOGY INC)
ComSIT hat 500 Stück SIHG33N65E-GE3 von Vishay (VISHAY INTERTECHNOLOGY INC) auf Lager. Power Field-Effect Transistor, 32.4A I(D), 650V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC. Lebenszyklus: Active / Mature. RoHS-konform. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von Vishay · Alle Power Field-Effect Transistors
| STOCK | 500 |
| PARTNUMBER | SIHG33N65E-GE3 |
| MANUFACTURER | Vishay (VISHAY INTERTECHNOLOGY INC) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | E SERIES POWER MOSFET |
| DESCRIPTION | Power Field-Effect Transistor, 32.4A I(D), 650V, 0.105ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC |
| LC CODE | 3.00 |
| CAGE CODE | 18612, 0LCA7, K4184, C2817, 09969 |
| ALERT DATE | 05-Nov-2021 |
| PART STATUS | Active |
| LIFECYCLESTAGE | Mature |
| STOCK | 500 |
