BAUTEIL:
STB55NE06 Power Field-Effect Transistors
ST Micro (STMICROELECTRONICS)
STB55NE06 von ST Micro (STMICROELECTRONICS) ist bei ComSIT auf Anfrage erhältlich. Power Field-Effect Transistor, 55A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB. Lebenszyklus: Discontinued / Discontinued. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von ST Micro · Alle Power Field-Effect Transistors
| PARTNUMBER | STB55NE06 |
| MANUFACTURER | ST Micro (STMICROELECTRONICS) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | N-CHANNEL 60V, 0.19 OHM, 55A D2PAK STRIPFET POWER MOSFET |
| DESCRIPTION | Power Field-Effect Transistor, 55A I(D), 60V, 0.022ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB |
| MFR. PKG. DESC. | D2PAK-3 |
| LC CODE | 5.00 |
| CAGE CODE | F8859, 50088, SCR76, 66958 |
| PART STATUS | Discontinued |
| LIFECYCLESTAGE | Discontinued |
