BAUTEIL:
TK32E12N1 / TK32E12N1S1XS Power Field-Effect Transistors
Toshiba (TOSHIBA CORP)
ComSIT hat 350 Stück TK32E12N1 von Toshiba (TOSHIBA CORP) auf Lager. Power Field-Effect Transistor, 32A I(D), 120V, 0.0138ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB. Lebenszyklus: Active / Mature. RoHS-konform. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von Toshiba · Alle Power Field-Effect Transistors
| STOCK | 350 |
| PARTNUMBER | TK32E12N1 |
| MANUFACTURER | Toshiba (TOSHIBA CORP) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | MOSFET SILICON N-CHANNEL MOS (U-MOSVIII-H) |
| DESCRIPTION | Power Field-Effect Transistor, 32A I(D), 120V, 0.0138ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
| MFR. PKG. DESC. | TO-220, 3 PIN |
| LC CODE | 3.00 |
| CAGE CODE | 61802 |
| ALERT DATE | 13-Dec-2022 |
| PART STATUS | Active |
| LIFECYCLESTAGE | Mature |
| STOCK | 350 |
