BAUTEIL:
RFD16N05LSM9A Power Field-Effect Transistors
Harris (HARRIS SEMICONDUCTOR)
ComSIT hat 320 Stück RFD16N05LSM9A von Harris (HARRIS SEMICONDUCTOR) auf Lager. Power Field-Effect Transistor, 16A I(D), 50V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA. Lebenszyklus: Discontinued / Discontinued. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von Harris · Alle Power Field-Effect Transistors
| STOCK | 320 |
| PARTNUMBER | RFD16N05LSM9A |
| MANUFACTURER | Harris (HARRIS SEMICONDUCTOR) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | TO-252 LOGIC LEVEL GATE (5V) DEVICE |
| DESCRIPTION | Power Field-Effect Transistor, 16A I(D), 50V, 0.047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA |
| LC CODE | 5.00 |
| CAGE CODE | 27410 |
| PART STATUS | Discontinued |
| LIFECYCLESTAGE | Discontinued |
| STOCK | 320 |
