BAUTEIL:
PSMN070-200P / PSMN070200P Power Field-Effect Transistors
Nexperia
ComSIT hat 200 Stück PSMN070-200P von Nexperia auf Lager. Power Field-Effect Transistor, 35A I(D), 200V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET. Lebenszyklus: Discontinued / Discontinued. RoHS-konform. Originale, zertifizierte Bauteile, bester Preis, schnelle weltweite Lieferung. Fragen Sie ein Angebot an
Alle Bauteile von Nexperia · Alle Power Field-Effect Transistors
| STOCK | 200 |
| PARTNUMBER | PSMN070-200P |
| MANUFACTURER | Nexperia (NEXPERIA) |
| TYPE | Transistors |
| CATEGORY | Power Field-Effect Transistors (Semiconductors > Transistors > Power Field-Effect Transistors) |
| MFR. DESC | N-CHANNEL TRENCHMOS SILICONMAX STANDARD LEVEL FET |
| DESCRIPTION | Power Field-Effect Transistor, 35A I(D), 200V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET |
| MFR. PKG. DESC. | SC-46, 3 PIN |
| LC CODE | 5.00 |
| CAGE CODE | H2HX9 |
| ALERT DATE | 30-Jun-2017 |
| PART STATUS | Discontinued |
| LIFECYCLESTAGE | Discontinued |
| STOCK | 200 |
